Effect of Uniaxial Strain on the Drain Current of a Heterojunction Tunneling Field-Effect Transistor

2011 ◽  
Vol 32 (4) ◽  
pp. 464-466 ◽  
Author(s):  
Paul M. Solomon ◽  
I. Lauer ◽  
A. Majumdar ◽  
J. T. Teherani ◽  
M. Luisier ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Uniaxial Strain ◽  
Effect Transistor

The effect of channel uniaxial strain on thermal conductivity of graphene nano-ribbon field effect transistor

2019 ◽  
Vol 33 (01) ◽  
pp. 1850416
Author(s):  
Elham Zonoobi Doyom ◽  
Saeed Haji-Nasiri
Keyword(s):  
Thermal Conductivity ◽  
Band Gap ◽  
Energy Band ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Channel Length ◽  
Uniaxial Strain ◽  
Energy Band Gap ◽  
Effect Transistor

The effect of channel uniaxial strain on thermal conductivity of graphene nano-ribbon field effect transistor (GNRFET) is analyzed by self-consistent Hückel method. The supposed strains are tensile and its values are 2% to 24% of lattice constant. All of the assumed strains are applied to the channel length direction. Energy band gap, density of states (DOS), phonon transmission, thermal conductivity, and I–V characteristics of the GNRFET have been calculated. The results show that by increasing the strain, the energy band gap of the channel is increased and the drain current is decreased. Also by increasing the band gap, phonon transmission is decreased. Maximum phonon transmission occurs in 8% strain. By considering all of these parameters, the results show that there is a maximum thermal conductivity versus temperature in 8% uniaxial strain that is more than the bare one and its value is decreased intensively in 16% and 24% strain. This is due to maximum phonon transmission that is observed in 8% strain and increasing the DOS around the energy band gap in this value. Also, it is observed that in the energy range of more than 0.75 eV, by increasing the strain, thermal conductivity is increased.

scholarly journals An Improved UU-MESFET with High Power Added Efficiency

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 573 ◽  
Author(s):  
Hujun Jia ◽  
Mei Hu ◽  
Shunwei Zhu
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Power Added Efficiency ◽  
Effect Transistor ◽  
The Relationship

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

5A 1300V Trenched and Implanted 4H-SiC Vertical JFET

2012 ◽  
Vol 229-231 ◽  
pp. 824-827 ◽  
Author(s):  
Gang Chen ◽  
Xiao Feng Song ◽  
Song Bai ◽  
Li Li ◽  
Yun Li ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Channel ◽  
Drain Current ◽  
Gate Bias ◽  
Blocking Voltage ◽  
Drain Bias ◽  
Effect Transistor ◽  
Lift Off

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with lift-off trenched and implanted method. Its blocking voltage exceeds 1300V at gate bias VG = -6V and forward drain current is in excess of 5A at gate bias VG = 3V and drain bias VD = 3V. The SiC VJFET device’s current density is 240A/cm2 at VG= 3V and VD = 3V, with related specific on-resistance 8.9mΩ•cm2. Further analysis reveals that the on-resistance depends greatly on ohmic contact resistance and the bonding spun gold. The specific on-resistance can be further reduced by improving the doping concentration of SiC channel epilayer and the device’s ohmic contact.

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

Doklady BGUIR ◽  
2022 ◽  
Vol 19 (8) ◽  
pp. 81-86
Author(s):  
I. Yu. Lovshenko ◽  
A. Yu. Voronov ◽  
P. S. Roshchenko ◽  
R. E. Ternov ◽  
Ya. D. Galkin ◽  
...  
Keyword(s):  
Field Effect ◽  
Proton Energy ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Proton Flux ◽  
High Electron ◽  
Electrical Characteristics ◽  
Device Structure ◽  
Dual Channel ◽  
Effect Transistor

The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.

Quantum Modelling of Nanoscale Silicon Gate-All-Around Field Effect Transistor

2020 ◽  
Vol 64 ◽  
pp. 115-122
Author(s):  
P. Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
Quantum Mechanical Effects ◽  
Novel Devices

The paper introduces an analytical model for gate all around (GAA) or Surrounding Gate Metal Oxide Semiconductor Field Effect Transistor (SG-MOSFET) inclusive of quantum mechanical effects. The classical oxide capacitance is replaced by the capacitance incorporating quantum effects by including the centroid parameter. The quantum variant of inversion charge distribution function, inversion layer capacitance, drain current, and transconductance expressions are modeled by employing this model. The established analytical model results agree with the simulated results, verifying these models' validity and providing theoretical supports for designing and applying these novel devices.

Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm

2019 ◽  
Vol 40 (8) ◽  
pp. 1245-1248 ◽  
Author(s):  
Jori Lemettinen ◽  
Nadim Chowdhury ◽  
Hironori Okumura ◽  
Iurii Kim ◽  
Sami Suihkonen ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Effect Transistor
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