The effect of channel uniaxial strain on thermal conductivity of graphene nano-ribbon field effect transistor

2019 ◽  
Vol 33 (01) ◽  
pp. 1850416
Author(s):  
Elham Zonoobi Doyom ◽  
Saeed Haji-Nasiri
Keyword(s):  
Thermal Conductivity ◽  
Band Gap ◽  
Energy Band ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Channel Length ◽  
Uniaxial Strain ◽  
Energy Band Gap ◽  
Effect Transistor

The effect of channel uniaxial strain on thermal conductivity of graphene nano-ribbon field effect transistor (GNRFET) is analyzed by self-consistent Hückel method. The supposed strains are tensile and its values are 2% to 24% of lattice constant. All of the assumed strains are applied to the channel length direction. Energy band gap, density of states (DOS), phonon transmission, thermal conductivity, and I–V characteristics of the GNRFET have been calculated. The results show that by increasing the strain, the energy band gap of the channel is increased and the drain current is decreased. Also by increasing the band gap, phonon transmission is decreased. Maximum phonon transmission occurs in 8% strain. By considering all of these parameters, the results show that there is a maximum thermal conductivity versus temperature in 8% uniaxial strain that is more than the bare one and its value is decreased intensively in 16% and 24% strain. This is due to maximum phonon transmission that is observed in 8% strain and increasing the DOS around the energy band gap in this value. Also, it is observed that in the energy range of more than 0.75 eV, by increasing the strain, thermal conductivity is increased.

Effect of Uniaxial Strain on the Drain Current of a Heterojunction Tunneling Field-Effect Transistor

2011 ◽  
Vol 32 (4) ◽  
pp. 464-466 ◽  
Author(s):  
Paul M. Solomon ◽  
I. Lauer ◽  
A. Majumdar ◽  
J. T. Teherani ◽  
M. Luisier ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Uniaxial Strain ◽  
Effect Transistor

Band gap engineered nano perforated graphene microstructures for field effect transistor

2016 ◽  
Author(s):  
Penchalaiah Palla ◽  
Durgesh Laxman Tiwari ◽  
Hasan Raza Ansari ◽  
Taraprasanna Saha Babu ◽  
Anita Sagadevan Ethiraj ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

2014 ◽  
Vol 2 (44) ◽  
pp. 9359-9363 ◽  
Author(s):  
Juan Zhu ◽  
Wenchong Wang ◽  
Qigang Zhong ◽  
Liqiang Li ◽  
Chuan Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Organic Films ◽  
Porous Structures ◽  
Patterned Growth ◽  
Effect Transistor ◽  
Magnitude Difference

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

scholarly journals An Improved UU-MESFET with High Power Added Efficiency

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 573 ◽  
Author(s):  
Hujun Jia ◽  
Mei Hu ◽  
Shunwei Zhu
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Power Added Efficiency ◽  
Effect Transistor ◽  
The Relationship

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

scholarly journals Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3121
Author(s):  
Monica La Mura ◽  
Patrizia Lamberti ◽  
Vincenzo Tucci
Keyword(s):  
High Frequency ◽  
Communication Systems ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Geometrical Parameters ◽  
Effect Transistor ◽  
Rf Performance ◽  
The Impact

The interest in graphene-based electronics is due to graphene’s great carrier mobility, atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These characteristics enable the development of extremely miniaturized high-performing electronic devices for next-generation radiofrequency (RF) communication systems. The main building block of graphene-based electronics is the graphene-field effect transistor (GFET). An important issue hindering the diffusion of GFET-based circuits on a commercial level is the repeatability of the fabrication process, which affects the uncertainty of both the device geometry and the graphene quality. Concerning the GFET geometrical parameters, it is well known that the channel length is the main factor that determines the high-frequency limitations of a field-effect transistor, and is therefore the parameter that should be better controlled during the fabrication. Nevertheless, other parameters are affected by a fabrication-related tolerance; to understand to which extent an increase of the accuracy of the GFET layout patterning process steps can improve the performance uniformity, their impact on the GFET performance variability should be considered and compared to that of the channel length. In this work, we assess the impact of the fabrication-related tolerances of GFET-base amplifier geometrical parameters on the RF performance, in terms of the amplifier transit frequency and maximum oscillation frequency, by using a design-of-experiments approach.

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