Study of oxide breakdown under very low electric field

2003 ◽  
Author(s):  
A. Teramoto ◽  
H. Umeda ◽  
K. Azamawari ◽  
K. Kobayashi ◽  
K. Shiga ◽  
...  
Keyword(s):  
Electric Field ◽  
Oxide Breakdown

Dependence of Reliability of Ultrathin Mos Gate Oxides on the Fermi Level Positions at Gate and Substrate

1997 ◽  
Vol 473 ◽  
Author(s):  
Tien-Chun Yang ◽  
Navakanta Bhat ◽  
Krishna C. Saraswat
Keyword(s):  
Electric Field ◽  
Fermi Level ◽  
Breakdown Strength ◽  
Gate Oxide ◽  
High Energy ◽  
Constant Current ◽  
Oxide Breakdown ◽  
Mos Devices ◽  
High Energy Electrons ◽  
Substrate Doping

ABSTRACTWe demonstrate that the reliability of ultrathin (< 10 nm) gate oxide in MOS devices depends on the Fermi level position at the gate, and not on the position at the substrate for constant current gate injection (Vg-). The oxide breakdown strength (Qbd) is less for p+ poly-Si gate than for n+ poly-Si gate, but, it is independent of the substrate doping type. The degradation of oxides is closely related to the electric field across the gate oxide, which is influenced by the cathode Fermi level. P+ poly-Si gate has higher barrier height for tunneled electrons, therefore, the cathode electric field must be higher to give the same injection current density. A higher electric field gives more high energy electrons at the anode, and therefore the damage is more at the substrate interface. Different substrate types cause no effect on the oxide electric field, and as a result, they do not influence the degradation.

Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al2O3 MOS Capacitors

2018 ◽  
Vol 924 ◽  
pp. 486-489 ◽  
Author(s):  
Muhammad I. Idris ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Atomic Layer Deposition ◽  
Electric Field ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Al2o3 Layer ◽  
Mos Capacitors ◽  
Oxide Breakdown ◽  
Layer Deposition ◽  
The Stability

This paper reports on the effect of forming gas annealing on the C-V characteristics and stability of Al2O3/SiC MOS capacitors deposited by atomic layer deposition, (ALD). C-V and I-V measurements were performed to assess the quality of the Al2O3 layer and the Al2O3/SiC interface. In comparison to as-deposited sample, the post oxide annealing (POA) in forming gas at high temperatures has improved the stability of C-V characteristic and the properties at the interface of Al2O3/SiC capacitors. However, the oxide capacitance and oxide breakdown electric field degrade with increased annealing temperature. The results provide indications to improve the performance of Al2O3/SiCcapacitors 4H-SiC devices by optimizing the annealing temperature.

The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests

2016 ◽  
Vol 858 ◽  
pp. 840-843 ◽  
Author(s):  
Kosuke Uchida ◽  
Toru Hiyoshi ◽  
Taro Nishiguchi ◽  
Hirofumi Yamamoto ◽  
Shinji Matsukawa ◽  
...  
Keyword(s):  
High Temperature ◽  
Electric Field ◽  
Epitaxial Layer ◽  
Threading Dislocations ◽  
Oxide Breakdown ◽  
Temperature Bias ◽  
Mixed Dislocation ◽  
Weibull Plot ◽  
Deep Pit ◽  
Drain Bias

The influence of surface pit shape on 4H-SiC double implanted MOSFETs (DMOSFETs) reliability under a high temperature drain bias test has been investigated. Threading dislocations formed two types of pit shapes (deep pit and shallow pit) on an epitaxial layer surface. The cause of the failure was revealed to be an oxide breakdown above the pit generated at the threading mixed dislocation in both pit shapes. Weibull distributions between two types of pits were different. Although the DMOSFETs on the epitaxial layer with the deep pit show longer lifetime than those with the shallow pit, the epitaxial layer with the shallow pit is suitable to estimate the lifetime of the DMOSFETs because of a linearity of the Weibull plot. The lifetime of the DMOSFETs with the shallow pit was dominated by an oxide electric field. The maximum oxide electric field required to obtain the lifetime of more than 10 years was estimated to be 2.7 MV/cm.

Characterization of the Degradation Processes in SiO2-Si Structure by Means of Electrolyte-Insulating-Semiconductor Systems

1993 ◽  
Vol 309 ◽  
Author(s):  
S.A. Bota ◽  
J.R. Morante ◽  
A.P. Baraban ◽  
V.V. Bulavinov ◽  
P.P. Konorov
Keyword(s):  
Electric Field ◽  
Hole Injection ◽  
Insulating Layer ◽  
Oxide Breakdown ◽  
Structure Degradation ◽  
Injection Zone ◽  
The Stability ◽  
Non Destructive

AbstractA non destructive method to characterize the properties of SiO2 films in SiO2-Si structures and analyze their variations under different external actions is presented and discussed. The method is based on the properties of the Electrolyte-SiO2 contact under polarization which allows us to study the SiO2 film in different injection conditions, in a hole injection zone, in a predominant electron injection zone, and finally, in a region of electron heating as a result of the electric field action before to reach the oxide breakdown. Moreover, using this method, higher electric field values than in the metal-SiO2-Si system can be applied.The characterization of hole traps, electron traps and defect precursors states in SiO2 films are carried out as well as their evolution and influence on the SiO2-Si structure degradation and electrical behaviour. Results measured on SiO2-Si structures obtained from different technological processes and submitted to different treatments are reported in order to discuss the possibilities of this method as a power tool to assess the stability and quality of insulating layer on semiconductors.

Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs

2015 ◽  
Vol 821-823 ◽  
pp. 673-676 ◽  
Author(s):  
Manato Deki ◽  
Takahiro Makino ◽  
Kazutoshi Kojima ◽  
Takuro Tomita ◽  
Takeshi Ohshima
Keyword(s):  
Silicon Carbide ◽  
Energy Transfer ◽  
Oxide Film ◽  
Electric Field ◽  
Ion Irradiation ◽  
Source Region ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Mos Capacitors ◽  
Oxide Breakdown

The critical electric field (Ecr) of the gate oxide in 4H-Silicon Carbide (SiC) MOSFETs was measured under inversion bias conditions with ion irradiation. The Linear Energy Transfer (LET) dependence of theEcrat which the gate oxide breakdown occurred in these MOSFETs was evaluated. The linear relationship between theEcr-1andLETwas observed for SiC MOSFETs. The slope of theLET-1/Ecrfor SiC MOSFETs is almost the same that of theLET-1/Ecrlines for SiC MOS capacitors. TheVdsdependence ofEcrwas also evaluated. The correlation between the direction of electric field of drain-source region and direction of ion incidence affects to instability ofEcr.

Light Emission Spectral Analysis: The Connection Between the Electric Field and the Spectrum

1999 ◽  
Author(s):  
Daniel L. Barton ◽  
Paiboon Tangyunyong ◽  
Jerry M. Soden ◽  
Christopher L. Henderson ◽  
Edward I. Cole ◽  
...  
Keyword(s):  
Spectral Analysis ◽  
Electric Field ◽  
Light Emission ◽  
Emission Spectra ◽  
Oxide Breakdown ◽  
Related Information ◽  
Failure Conditions ◽  
The Relationship ◽  
Theoretical Insight ◽  
Insight Into

Abstract The device physics necessary to gain theoretical insight into the relationship between the bias conditions and the associated electric field for semiconductor structures in various failure conditions such as forward and reverse biased junctions, MOSFET saturation, latchup, and gate oxide breakdown are examined. The relationships are verified by light emission spectra collected from test samples under various bias conditions. Several examples are included that demonstrate the utility and limitations of spectral analysis techniques for defect identification and the associated, non-electric field related information contained in the spectra.

Resolution in photoelectron microscopy

1991 ◽  
Vol 49 ◽  
pp. 458-459
Author(s):  
G. F. Rempfer
Keyword(s):  
Electron Microscopy ◽  
Electric Field ◽  
Ultraviolet Light ◽  
Uniform Field ◽  
Virtual Image ◽  
Lens System ◽  
Photoemission Electron Microscopy ◽  
Planar Electrode ◽  
Electron Lens ◽  
Photoemission Electron

In photoelectron microscopy (PEM), also called photoemission electron microscopy (PEEM), the image is formed by electrons which have been liberated from the specimen by ultraviolet light. The electrons are accelerated by an electric field before being imaged by an electron lens system. The specimen is supported on a planar electrode (or the electrode itself may be the specimen), and the accelerating field is applied between the specimen, which serves as the cathode, and an anode. The accelerating field is essentially uniform except for microfields near the surface of the specimen and a diverging field near the anode aperture. The uniform field forms a virtual image of the specimen (virtual specimen) at unit lateral magnification, approximately twice as far from the anode as is the specimen. The diverging field at the anode aperture in turn forms a virtual image of the virtual specimen at magnification 2/3, at a distance from the anode of 4/3 the specimen distance. This demagnified virtual image is the object for the objective stage of the lens system.

Field-assisted ionization theory for microscopists

1994 ◽  
Vol 52 ◽  
pp. 820-821
Author(s):  
Patrick P. Camus
Keyword(s):  
Electric Field ◽  
Electron Tunneling ◽  
Ionization Probability ◽  
Critical Distance ◽  
Tunneling Probability ◽  
Field Ionization ◽  
Radius Of Curvature ◽  
Field Evaporation ◽  
A Value ◽  
Ion Emission

The theory of field ion emission is the study of electron tunneling probability enhanced by the application of a high electric field. At subnanometer distances and kilovolt potentials, the probability of tunneling of electrons increases markedly. Field ionization of gas atoms produce atomic resolution images of the surface of the specimen, while field evaporation of surface atoms sections the specimen. Details of emission theory may be found in monographs.Field ionization (FI) is the phenomena whereby an electric field assists in the ionization of gas atoms via tunneling. The tunneling probability is a maximum at a critical distance above the surface,xc, Fig. 1. Energy is required to ionize the gas atom at xc, I, but at a value reduced by the appliedelectric field, xcFe, while energy is recovered by placing the electron in the specimen, φ. The highest ionization probability occurs for those regions on the specimen that have the highest local electric field. Those atoms which protrude from the average surfacehave the smallest radius of curvature, the highest field and therefore produce the highest ionizationprobability and brightest spots on the imaging screen, Fig. 2. This technique is called field ion microscopy (FIM).

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