Proton tolerance of multiple-threshold voltage and multiple-breakdown voltage cmos device design points in a 0.18 μm system-on-a-chip cmos technology

2003 ◽  
Vol 50 (6) ◽  
pp. 1834-1838 ◽  
Author(s):  
Ying Li ◽  
J.D. Cressler ◽  
Yuan Lu ◽  
Jun Pan ◽  
Guofu Niu ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
Cmos Technology ◽  
Device Design ◽  
Multiple Threshold ◽  
System On A Chip ◽  
Multiple Breakdown

Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology

2012 ◽  
Author(s):  
Yuk L. Tsang ◽  
Xiang D. Wang ◽  
Reyhan Ricklefs ◽  
Jason Goertz
Keyword(s):  
Threshold Voltage ◽  
Electrical Characterization ◽  
Cmos Technology ◽  
Short Channel ◽  
Visual Defect ◽  
Subthreshold Region ◽  
Short Channel Effect ◽  
Channel Effect ◽  
Transistor Model

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.

Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling

2021 ◽  
Vol 314 ◽  
pp. 119-126
Author(s):  
Yusuke Oniki ◽  
Lars Åke Ragnarsson ◽  
Hideaki Iino ◽  
Daire Cott ◽  
Boon Teik Chan ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Metal Gate ◽  
Unit Process ◽  
Device Scaling ◽  
Interface Dipole ◽  
Device Integration ◽  
Multiple Threshold ◽  
Long Channel

This paper addresses challenges and solutions of replacement metal gate of gate-all-around nanosheet devices. The unit process and integration solutions for the metal gate patterning as well as interface dipole patterning to offer multiple threshold voltage have been developed. The challenges of long channel device integration are also discussed.

scholarly journals An Improved UU-MESFET with High Power Added Efficiency

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 573 ◽  
Author(s):  
Hujun Jia ◽  
Mei Hu ◽  
Shunwei Zhu
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Power Added Efficiency ◽  
Effect Transistor ◽  
The Relationship

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 783-786
Author(s):  
Mitsuo Okamoto ◽  
Mieko Tanaka ◽  
Tsutomu Yatsuo ◽  
Kenji Fukuda
Keyword(s):  
Electrical Properties ◽  
Valence Band ◽  
Threshold Voltage ◽  
Present Report ◽  
Cmos Technology ◽  
Interface State ◽  
Valence Band Edge ◽  
State Distribution ◽  
Channel Mobility ◽  
Temperature Dependences

It is of great importance to investigate the electrical properties of SiC p-channel MOSFETs for development of SiC CMOS technology. In the present report, we investigated dependences of electrical properties of the SiC p-channel MOSFETs on SiC poly-types. The on-state characteristics (channel mobility, threshold voltage, and temperature dependences) for the 4H- and 6H-SiC p-channel MOSFETs showed similar behavior, although those of 4H-SiC n-channel MOSFETs are usually quite different from those of 6H-SiC. These results might be caused by the similar SiC MOS interface state distribution around the valence band edge.

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