Recent Developments in Modeling of Liquid Phase Electroepitaxy: A Continuum Approach

Liquid phase electroepitaxy (LPEE) is a low temperature, solution growth technique which has been proven to be successful in growing high quality, thick compound and alloy semiconducting single crystal layers. The availability of such high quality alloy layers would open new horizons in the production of optoelectronic and high-speed devices. Due to the technological importance of this crystal growth technique, some theoretical models for its growth process have been developed recently to provide needed information to experimentalists to develop growth configurations for reproducible desired single crystals. These models have shed light on various aspects of the LPEE growth process. This review article, with 71 references, provides the reader with an overview of recently developed macroscopic continuum models for the LPEE growth process of binary and ternary semiconductors. Fundamental equations of these models are obtained from the basic principles of electrodynamics and thermomechanics of the continuum. The models include various thermoelectric effects observed in LPEE and also incorporates microscopic surface phenomena such as surface kinetics. Results of numerical simulations are presented, and compared with available experimental data. The significance of research results are discussed.

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Structural changes in silicon-on-insulator material during post-implantation annealing

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100145054 ◽

1986 ◽

Vol 44 ◽

pp. 736-737

Author(s):

C. O. Jung ◽

S. J. Krause ◽

S.R. Wilson

Keyword(s):

Integrated Circuits ◽

Oxide Layer ◽

High Speed ◽

Structural Changes ◽

Device Fabrication ◽

Silicon On Insulator ◽

High Quality ◽

Radiation Hardened ◽

Post Implantation ◽

Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

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Application of Advanced Electrochemical Methods with Nanomaterial-based Electrodes as Powerful Tools for Trace Analysis of Drugs and Toxic Compounds

Current Analytical Chemistry ◽

10.2174/1573411014666180316170607 ◽

2019 ◽

Vol 15 (2) ◽

pp. 143-151 ◽

Cited By ~ 1

Author(s):

Parviz Norouzi ◽

Bagher Larijani ◽

Taher Alizadeh ◽

Eslam Pourbasheer ◽

Mostafa Aghazadeh ◽

...

Keyword(s):

Trace Analysis ◽

High Speed ◽

Portable Devices ◽

Great Opportunity ◽

Toxic Compounds ◽

High Speed Analysis ◽

Recent Developments ◽

Sensitivity And Selectivity ◽

Trace Measurement ◽

Health Application

Background: The new progress in electronic devices has provided a great opportunity for advancing electrochemical instruments by which we can more easily solve many problems of interest for trace analysis of compounds, with a high degree of accuracy, precision, sensitivity, and selectivity. On the other hand, in recent years, there is a significant growth in the application of nanomaterials for the construction of nanosensors due to enhanced chemical and physical properties arising from discrete modified nanomaterial-based electrodes or microelectrodes. Objective: Combination of the advanced electrochemical system and nanosensors make these devices very suitable for the high-speed analysis, as motioning and portable devices. This review will discuss the recent developments and achievements that have been reported for trace measurement of drugs and toxic compounds for environment, food and health application.

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2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

Nature Communications ◽

10.1038/s41467-021-20926-w ◽

2021 ◽

Vol 12 (1) ◽

Author(s):

Hitesh Agarwal ◽

Bernat Terrés ◽

Lorenzo Orsini ◽

Alberto Montanaro ◽

Vito Sorianello ◽

...

Keyword(s):

Boron Nitride ◽

Hafnium Oxide ◽

High Speed ◽

Hexagonal Boron Nitride ◽

Temperature Stability ◽

Cost Effective ◽

Fold Increase ◽

Building Blocks ◽

High Quality ◽

New Device

AbstractElectro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This combination of materials allows for a high-quality modulator device with high performances: a ~39 GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high-speed modulators. This 2D-3D dielectric integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.

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High‐Quality Thin Films of UiO‐66‐NH2 by Coordination Modulated Layer‐by‐Layer Liquid Phase Epitaxy

Chemistry - A European Journal ◽

10.1002/chem.202005416 ◽

2021 ◽

Author(s):

Roland A. Fischer ◽

A. Lisa Semrau

Keyword(s):

Thin Films ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Layer By Layer ◽

High Quality

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Low Temperature OMVPE of ZnSe from Alkyl Sources Using a Plasma Disk Lamp

MRS Proceedings ◽

10.1557/proc-129-239 ◽

1988 ◽

Vol 129 ◽

Cited By ~ 1

Author(s):

K. L. Tokuda ◽

B. Pihlstrom ◽

D. W. Kisker ◽

M. Lamont Schnoes ◽

G. J. Collins

Keyword(s):

Growth Process ◽

Vacuum Ultraviolet ◽

Source Material ◽

Organometallic Vapor Phase Epitaxy ◽

Impurity Incorporation ◽

High Quality ◽

Selenium Compound ◽

Ultraviolet Photons ◽

Reduced Toxicity ◽

Source Materials

ABSTRACTThe growth of high quality ZnSe by organometallic vapor phase epitaxy (OMVPE) has generally been hindered because of parasitic source pre-reactions or relatively high source decomposition temperatures. In this work, we have used vacuum ultraviolet photons generated by a disk-plasma lamp to assist the ZnSe growth process using diethylselenium and diethylzinc as source materials. This approach has resulted in satisfactory growth rates and high material quality at temperatures as low as 250°C, without the limitations of prereaction typically observed when H2Se is used for the selenium source material. In addition, the alkyl selenium compound offers advantages due to reduced toxicity compared to H2Se. This new, low-growth-temperature process thus offers the possibility of improved stoichiometry and impurity incorporation control as well as a reduced thermal effect on the underlying substrate during growth. At the same time, the advantages of excellent morphology and uniformity typically exhibited by the alkylbased growth processes are retained.

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Regional education on endoscopic surgery using a teleconference system with high-quality video via the internet: Saga surgical videoconferences

BMC Medical Education ◽

10.1186/s12909-020-02215-0 ◽

2020 ◽

Vol 20 (1) ◽

Author(s):

Tatsuya Manabe ◽

Mitsuhiro Takasaki ◽

Takao Ide ◽

Kenji Kitahara ◽

Seiji Sato ◽

...

Keyword(s):

Endoscopic Surgery ◽

Educational System ◽

High Speed ◽

The Internet ◽

Web Conferencing ◽

High Quality ◽

Anatomical Structures ◽

Quality Video ◽

High Quality Video ◽

Conferencing System

Abstract Background Effective education about endoscopic surgery (ES) is greatly needed for unskilled surgeons, especially at low-volume institutions, to maintain the safety of patients. We have tried to establish the remote educational system using videoconference system through the internet for education about ES to surgeons belonging to affiliate institutions. The aim of this manuscript was to report the potential to establish a comfortable remote educational system and to debate its advantages. Methods We established a local remote educational conference system by combining the use of a general web conferencing system and a synchronized remote video playback system with annotation function through a high-speed internet. Results During 2014–2019, we conducted 14 videoconferences to review and improve surgeons’ skills in performing ES at affiliated institutions. At these conferences, while an uncut video of ES that had been performed at one of the affiliated institutions was shown, the surgical procedure was discussed frankly, and expert surgeons advised improvements. The annotation system is useful for easy, prompt recognition among the audience regarding anatomical structures and procedures that are difficult to explain verbally. Conclusions This system is of low initial cost and offers easy participation and high-quality videos. It would therefore be a useful tool for regional ES education.

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AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156408005874 ◽

2008 ◽

Vol 18 (04) ◽

pp. 913-922 ◽

Cited By ~ 2

Author(s):

SIDDHARTH RAJAN ◽

UMESH K. MISHRA ◽

TOMÁS PALACIOS

Keyword(s):

Field Effect ◽

High Speed ◽

Digital Circuits ◽

Field Effect Transistors ◽

Rf Power ◽

Power Performance ◽

Future Directions ◽

Recent Developments ◽

Gan Hemts ◽

State Of Art

This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga -polar AlGaN / GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N -polar AlGaN / GaN HEMTs with microwave power performance comparable with state-of-art Ga -polar AlGaN / GaN HEMTs. Finally we will discuss how GaN -based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.

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