Subsurface Damage Detection on Ground Silicon Wafers Using Polarized Laser Scattering

2019 ◽  
Vol 141 (10) ◽  
Author(s):  
Jingfei Yin ◽  
Qian Bai ◽  
Bi Zhang
Keyword(s):  
Residual Stress ◽  
Silicon Wafer ◽  
Incident Light ◽  
Subsurface Damage ◽  
Grinding Process ◽  
Subsurface Crack ◽  
Principal Stresses ◽  
Laser Scattering ◽  
Hard And Brittle Material ◽  
The Difference

Abstract A silicon wafer is important for the electronic and computer industries. However, subsurface damage (SSD), which is detrimental to the performance and lifetime of a silicon chip, is easily induced in a silicon wafer during a grinding process since silicon is typically a hard and brittle material. Therefore, it is necessary to detect and remove SSD in the subsequent processes. In this study, a polarized laser scattering (PLS) system is installed to detect the SSD in a ground wafer. It is found that not only the subsurface crack but also the residual stress leads to depolarization of an incident light. The effects of residual stress on depolarization are studied. The residual stress results in the photoelasticity, which causes the depolarization of the incident light in the PLS system. The depolarization caused by the residual stress is determined by the directions and the difference of the principal stresses. When the polarization direction of the incident light is aligned with one of the principal stresses, the effects of the residual stress can be minimized; therefore, the subsurface crack can be quantitatively estimated by PLS.

Analytical prediction for depth of subsurface damage in silicon wafer due to self-rotating grinding process

2019 ◽  
Vol 19 (5) ◽  
pp. 570-581 ◽  
Author(s):  
Lixiang Zhang ◽  
Pei Chen ◽  
Tong An ◽  
Yanwei Dai ◽  
Fei Qin
Keyword(s):  
Silicon Wafer ◽  
Subsurface Damage ◽  
Grinding Process ◽  
Analytical Prediction

Evaluation of Subsurface Damage and Residual Stress of Glass Ceramic Under Grinding Process

2012 ◽  
Vol 8 (1) ◽  
pp. 484-488
Author(s):  
Y. C. Chen ◽  
G. J. Fan ◽  
C. Y. Chan ◽  
T. M. Huang
Keyword(s):  
Residual Stress ◽  
Glass Ceramic ◽  
Subsurface Damage ◽  
Grinding Process

TEM investigations of surface residual stress relaxation in A12O3 and Al2O3-SiC nanocomposite

1994 ◽  
Vol 52 ◽  
pp. 628-629
Author(s):  
J. Fang ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Residual Stress ◽  
Single Phase ◽  
Stress Relief ◽  
Stress Recovery ◽  
Surface Residual Stress ◽  
Microscopic Mechanism ◽  
Sic Particles ◽  
Annealing Procedure ◽  
The Difference ◽  
Nano Size

It was Niihara et al. who first discovered that the fracture strength of Al2O3 can be increased by incorporating as little as 5 vol.% of nano-size SiC particles (>1000 MPa), and that the strength would be improved further by a simple annealing procedure (>1500 MPa). This discovery has stimulated intense interest on Al2O3/SiC nanocomposites. Recent indentation studies by Fang et al. have shown that residual stress relief was more difficult in the nanocomposite than in pure Al2O3. In the present work, TEM was employed to investigate the microscopic mechanism(s) for the difference in the residual stress recovery in these two materials.Bulk samples of hot-pressed single phase Al2O3, and Al2O3 containing 5 vol.% 0.15 μm SiC particles were simultaneously polished with 15 μm diamond compound. Each sample was cut into two pieces, one of which was subsequently annealed at 1300° for 2 hours in flowing argon. Disks of 3 mm in diameter were cut from bulk samples.

scholarly journals The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 429
Author(s):  
Tengyun Liu ◽  
Peiqi Ge ◽  
Wenbo Bi
Keyword(s):  
Residual Stress ◽  
Surface Layer ◽  
Phase Transitions ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Silicon Wafer ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon ◽  
Diamond Wire

Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.

scholarly journals Study on the Effect of Grinding Pressure on Material Removal Behavior Performed on a Self-Designed Passive Grinding Simulator

2021 ◽  
Vol 11 (9) ◽  
pp. 4128
Author(s):  
Peng-Zhan Liu ◽  
Wen-Jun Zou ◽  
Jin Peng ◽  
Xu-Dong Song ◽  
Fu-Ren Xiao
Keyword(s):  
Residual Stress ◽  
Surface Roughness ◽  
Service Life ◽  
Material Removal ◽  
Removal Rate ◽  
Grinding Force ◽  
Grinding Wheel ◽  
Grinding Process ◽  
Grinding Temperature ◽  
Grinding Efficiency

Passive grinding is a new rail grinding strategy. In this work, the influence of grinding pressure on the removal behaviors of rail material in passive grinding was investigated by using a self-designed passive grinding simulator. Meanwhile, the surface morphology of the rail and grinding wheel were observed, and the grinding force and temperature were measured during the experiment. Results show that the increase of grinding pressure leads to the rise of rail removal rate, i.e., grinding efficiency, surface roughness, residual stress, grinding force and grinding temperature. Inversely, the enhancement of grinding pressure and grinding force will reduce the grinding ratio, which indicates that service life of grinding wheel decreases. The debris presents dissimilar morphology under different grinding pressure, which reflects the distinction in grinding process. Therefore, for rail passive grinding, the appropriate grinding pressure should be selected to balance the grinding quality and the use of grinding wheel.

In situ wireless measurement of grinding force in silicon wafer self-rotating grinding process

2021 ◽  
Vol 154 ◽  
pp. 107550
Author(s):  
Fei Qin ◽  
Lixiang Zhang ◽  
Pei Chen ◽  
Tong An ◽  
Yanwei Dai ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Grinding Force ◽  
Grinding Process ◽  
Wireless Measurement

Problems Associated with Kα Doublet in Residual Stress Measurements

1979 ◽  
Vol 23 ◽  
pp. 333-339
Author(s):  
S. K. Gupta ◽  
B. D. Cullity
Keyword(s):  
Residual Stress ◽  
Silicon Powder ◽  
Lattice Parameter ◽  
Diffraction Peak ◽  
Parameter Determination ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analysis Techniques ◽  
The Difference ◽  
Similar Accuracy

Since the measurement of residual stress by X-ray diffraction techniques is dependent on the difference in angle of a diffraction peak maximum when the sample is examined consecutively with its surface at two different angles to the diffracting planes, it is important that these diffraction angles be obtained precisely, preferably with an accuracy of ± 0.01 deg. 2θ. Similar accuracy is desired in precise lattice parameter determination. In such measurements, it is imperative that the diffractometer be well-aligned. It is in the context of diffractometer alignment with the aid of a silicon powder standard free of residual stress that the diffraction peak analysis techniques described here have been developed, preparatory to residual stress determinations.

The Effect of Electromagnetic Pulse Treatment on Thin – Wall Bearing Ferrules Dimensional Accuracy

2014 ◽  
Vol 887-888 ◽  
pp. 1328-1332
Author(s):  
Wang Biao Qiu ◽  
Wei Xing Chen
Keyword(s):  
Residual Stress ◽  
Electromagnetic Pulse ◽  
Optical Measurement ◽  
Dimensional Accuracy ◽  
Magnetic Treatment ◽  
Thin Wall ◽  
Pulse Treatment ◽  
The Difference ◽  
The Stability ◽  
Frequency Pulse

The article based on different frequency pulse equiponderance electromagnetic destressing comparison experiment, using vertical optical measurement to survey the changes of bearing ferrules size, study the difference between the effect of different frequency electromagnetic in removing residual stress, find the frequency of magnetic treatment pulse that help to maintain the stability of the thin-wall bearing collars' size, effectively improve the cycle of bearing ferrules process .

Heat Treatment Effects on Distortion, Residual Stress, and Retained Austenite in Carburized 4320 Steel

2014 ◽  
Vol 783-786 ◽  
pp. 692-697 ◽  
Author(s):  
Andrew Clark ◽  
Randy J. Bowers ◽  
Derek O. Northwood
Keyword(s):  
Heat Treatment ◽  
Residual Stress ◽  
Retained Austenite ◽  
Compressive Residual Stress ◽  
Surface Residual Stress ◽  
Depth Profiles ◽  
Size And Shape ◽  
Austenite Content ◽  
Treatment Conditions ◽  
The Difference

The effects of heat treatment on distortion, residual stress, and retained austenite were compared for case-carburized 4320 steel, in both the austempered and quench-and-tempered condition. Navy C-ring samples were used to quantify both size and shape distortions, as well as residual stress. The austempering heat treatment produced less distortion and a higher surface residual stress. Both hoop and axial stresses were measured; the difference between them was less than seven percent in all cases. Depth profiles were obtained for residual stress and retained austenite from representative C-ring samples for the austempered and quench-and-tempered heat treatment conditions. Austempering maintained a compressive residual stress to greater depths than quench-and-tempering. Quench-and-tempering also resulted in lower retained austenite amounts immediately beneath the surface. However, for both heat treatments, the retained austenite content was approximately one percent at depths greater than 0.5 mm.

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