Effects of Substrate Properties, Film Thickness and Evaporation Rate on the Surface Roughness of Ultra Thin Titanium Films

2007 ◽  
Author(s):  
Guoqiang Han ◽  
Zhuangde Jiang ◽  
Weixuan Jing ◽  
Mingzhi Zhu
Keyword(s):  
Surface Roughness ◽  
Film Thickness ◽  
Surface Properties ◽  
Evaporation Rate ◽  
Substrate Surface ◽  
Film Surface ◽  
Deposition Process ◽  
Electron Beam Evaporation ◽  
Titanium Film ◽  
Substrate Surfaces

Ultra thin (less than 50nm) titanium films with various thicknesses are systematically deposited on different substrates by electron-beam evaporation at various deposition rates in order to correlate flat titanium film surface roughness with deposition process parameters. In this paper, the influences of the substrate surface properties, film thickness and evaporation rate on surface roughness of flat ultra thin titanium films are clarified. In this study, distinct and abrupt steps on the film surface were fabricated by masks pasted on the substrate surfaces during the deposition process. The step can be scanned with stylus profilometer to reveal the height of the step (the thickness of the thin film). Ultra thin films with height 20–50 nm were routinely measured in this way. It is important to notice that ultra thin titanium films with different surface roughness but having the same film thickness can be obtained in a controllable way. Therefore, the control of substrate surface roughness, film thickness and evaporation process is essential to prepare ultra thin titanium films with desired surface properties in reproducible way for further biological and nanostructure investigations of these materials.

In Situ Study of Titanium Film Growth On Different Substrates

2000 ◽  
Vol 648 ◽  
Author(s):  
P. Oberhauser ◽  
M. Poppeller ◽  
R. Abermann
Keyword(s):  
Surface Roughness ◽  
Tensile Stress ◽  
Film Thickness ◽  
Film Growth ◽  
Substrate Surface ◽  
Growth Stress ◽  
Microstructural Properties ◽  
Titanium Film ◽  
High Degree

AbstractThe chemical and microstructural properties of a surface have a strong influence on the growth mode and the morphology of a film evaporated onto this interface. Changes in the growth stress of thin titanium films, measured in situ by a cantilever beam technique, evaporated under UHV-conditions are used to monitor the chemical and microstructural properties of a substrate surface. The starting substrate film used in this study was a quasi single-crystalline TiO2-film (d=50 nm) prepared by reactive evaporation of titanium in an oxygen atmosphere and subsequent annealing (20 min, 400°C). The Ti-growth stress on this substrate is compressive up to monolayer coverage and tensile at higher film thickness, which is interpreted to indicate a strong interaction between TiO2 and the arriving Ti atoms at the interface during monolayer formation and strained (tensile) layer epitaxy at higher film thickness. In a second series of experiments the TiO2-film was covered with Al-overlayers of varying thickness. Due to oxygen interdiffusion from the TiO2-film an amorphous Al-oxide layer is formed at the interface eliminating the high degree of order of the substrate TiO2-film. On this amorphous substrate the stress vs. thickness curve of the Ti-film, in terms of our stress model, is interpreted to indicate island formation and growth of a polycrystalline Ti-film. At Al-layer thicknesses above about 3 nm the Al-interface becomes metallic. The structure of this Al-surface depends on the film thickness and substrate temperature during its deposition. During deposition of the first Ti-monolayer on metallic Al a large incremental tensile stress (up to 45 GPa) is measured. The magnitude of this tensile stress is closely related to the surface microstructure of the Al substrate. The surface roughness deduced from the tensile interface stress is compared with the surface roughness measured by AFM.For comparison, analogous experiments were made with Al2O3/Al substrate bilayers. The results of these experiments qualitatively agree with those on the TiO2/Al-substrate. The general shape of the stress vs. thickness curve is comparable, however quantitative differences are interpreted to be due to differences in the structure and/or chemical composition of the substrate Al-film.

Surface Roughness in Alumina Thin Film Deposited on Silica Using Oblique Incidence

2014 ◽  
Vol 787 ◽  
pp. 373-377 ◽  
Author(s):  
Li Jun He ◽  
Chuan Li ◽  
Xing Zhao Liu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Film Surface ◽  
Electron Beam Evaporation ◽  
Oblique Angle Deposition ◽  
Inclined Angle ◽  
Physical And Chemical

The main characteristics of a surface are physical and chemical structure, surface tension and surface roughness. Surface roughness is one of the critical factors, which could cause instability in quality performance. In this paper, surface roughness of alumina thin films deposited on a silicon substrate by using electron beam evaporation with oblique angle deposition were studied. It has been found that the surface roughness of the alumina thin films was dependent on the substrate temperature, the deposition rate, the film thickness and the inclined angle. The experimental results showed that increasing the substrate temperature reduced the surface roughness at a low inclined angle and enhanced the surface roughness at a high inclined angle, and the surface roughness increased with increasing deposition rate and film thickness. By choosing the appropriate film preparation parameters, the film surface roughness was effectively controlled.

Preparation and Characterization of Magnetic Force Microscopy Tips Coated with Nickel Films by e-Beam Evaporation

2018 ◽  
Vol 765 ◽  
pp. 3-7
Author(s):  
Badin Damrongsak ◽  
Samutchar Coomkaew ◽  
Karnt Saengkaew ◽  
Ittipon Cheowanish ◽  
Pongsakorn Jantaratana
Keyword(s):  
Film Thickness ◽  
Magnetic Force Microscopy ◽  
Magnetic Force ◽  
Film Surface ◽  
Electron Beam Evaporation ◽  
Film Stress ◽  
Nickel Films ◽  
Force Microscopy ◽  
Best Response ◽  
Cantilever Bending

In this work, magnetic force microscopy (MFM) tips coated with a nickel thin-film were prepared and characterized for applications in the measurement of the magnetic write field. Nickel films with various thicknesses in a range of 20 – 80 nm were deposited on silicon substrates and silicon atomic force microscopy (AFM) tips by electron beam evaporation. Film surface morphologies and magnetic properties of the coated nickel films were investigated by using AFM and vibrating sample magnetometry (VSM). The rms roughness increased with the film thickness and was in a range between 0.1 and 0.3 nm. VSM results revealed that the mean coercive field of the nickel films was 20 Oe and there was an increase in the coercivity as the film thickness increased. In addition, the prepared MFM tips were evaluated for the tip response to the dc and ac magnetic field generated from perpendicular write heads. It was found that the MFM tip had the best response to the write field when coated with 60 nm thick nickel film. The coating thickness over 60 nm was inapplicable due to the cantilever bending caused by the film stress.

Epitaxial Iridium Growth on Strontium Titanate

2000 ◽  
Vol 648 ◽  
Author(s):  
Z. Dai ◽  
A.P. Li ◽  
C. Bednarski ◽  
L. I. McCann ◽  
B. Golding
Keyword(s):  
Surface Roughness ◽  
Substrate Surface ◽  
Surface Preparation ◽  
Electron Beam Evaporation ◽  
Layer By Layer ◽  
Epitaxial Relationship ◽  
Ion Channeling ◽  
Substrate Temperatures ◽  
Subsequent Layer

AbstractEpitaxial (100) iridium films have been grown on (100) SrTiO3 (STO) substrates by electron beam evaporation. The epitaxial relationship between the iridium film and STO substrate was determined to be Ir(001)[100]//STO(001)[100]. A systematic study of the role of STO substrate surface preparation, Ir thickness, and substrate temperature on Ir film crystallinity and morpholo- gy has been performed. The best Ir films typically have small Ir(200) XRD linewidths < 0.3 °, surface roughness of 0.2 nm, and low ion channeling yields, χmin≤ 4%, when deposited at 800 °C. Films generally become smoother with better crystallinity when the film thickness approaches 300 nm. A growth mode with initial island formation and subsequent layer-by-layer appears to take place at higher substrate temperatures, whereas at lower temperatures the film grows in a 3D mode.

scholarly journals The impact of film thickness and substrate surface roughness on the thermal resistance of aluminum nitride nucleation layers

2013 ◽  
Vol 113 (21) ◽  
pp. 213502 ◽  
Author(s):  
Zonghui Su ◽  
Justin P. Freedman ◽  
Jacob H. Leach ◽  
Edward A. Preble ◽  
Robert F. Davis ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Aluminum Nitride ◽  
Film Thickness ◽  
Thermal Resistance ◽  
Substrate Surface ◽  
Substrate Surface Roughness ◽  
The Impact

scholarly journals Surface roughness minimum: Ag thin layer deposited on a glass

2001 ◽  
Vol 66 (7) ◽  
pp. 483-490 ◽  
Author(s):  
R. Petrovic ◽  
S. Strbac ◽  
N. Bundaleski ◽  
Z. Rakocevic
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Thin Layer ◽  
Layer Thickness ◽  
Deposition Rate ◽  
Turning Point ◽  
Deposition Time ◽  
Substrate Surface ◽  
Deposition Process ◽  
Silver Thin Films

In this paper the results of an examination of the surface roughness and morphology dependence of silver thin films up to 100 nm thick deposited on a microscope glass on the deposition rate and on the deposition time are presented. It was found that, for a constant deposition rate, the surface roughness exhibits minimum at a certain layer thickness. This coincides with the turning point when the influence of the substrate surface on the deposition process becomes negligible, i.e., to the change in the nature of the system substrate/deposit from Ag/glass to Ag/Ag. For a constant layer thickness, sthe surface roughness minimum, achieved at a certain deposition rate, coincides to the turning point when the average free path for vertical adatom mobility becomes zero.

Defect structure in Co-W thin films

1986 ◽  
Vol 44 ◽  
pp. 822-823
Author(s):  
U. Admon ◽  
M.P Dariel ◽  
E. Grünbaum ◽  
G. Kimmel
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Diffraction Pattern ◽  
Orientation Relationship ◽  
Defect Structure ◽  
Substrate Surface ◽  
Stacking Faults ◽  
Deposition Process ◽  
Polycrystalline Copper ◽  
Small Grains

Thin films of Co-W, 300-500Å thick, electrodeposited unto polycrystalline copper substrates (the details of the deposition process are given in ref. 1), consist of a background of small grains of size of the order of the film thickness, in which 10-20 times larger grains are dispersed. These large grains display a predominant [0001]hcp or [001] or [lll]fcc texture. The large grains are mostly faulted, the faults appearing as parallel stripes running across their whole width (Fig. 1). These stripes have been identified by SAD and DF as being alternating hep and fee platelets. The diffraction pattern (Fig. 2), taken from grain A in Fig.1, indicates a (0001)h||(001)c||substrate surface, with [1010]h||[110]c orientation relationship between the hep and fee platelets (relationship I). The streaking and the appearance of the {200} cubic spots as cross shaped satellites is attributed to the presence of stacking faults on the {111} planes.

scholarly journals Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 906
Author(s):  
Chea-Young Lee ◽  
Young-Hee Joo ◽  
Minsoo P. Kim ◽  
Doo-Seung Um ◽  
Chang-Il Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Work Function ◽  
Surface Properties ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Film Surface ◽  
Etching Mechanism

Plasma etching processes for multi-atomic oxide thin films have become increasingly important owing to the excellent material properties of such thin films, which can potentially be employed in next-generation displays. To fabricate high-performance and reproducible devices, the etching mechanism and surface properties must be understood. In this study, we investigated the etching characteristics and changes in the surface properties of InGaZnO4 (IGZO) thin films with the addition of O2 gases based on a CF4/Ar high-density-plasma system. A maximum etch rate of 32.7 nm/min for an IGZO thin film was achieved at an O2/CF4/Ar (=20:25:75 sccm) ratio. The etching mechanism was interpreted in detail through plasma analysis via optical emission spectroscopy and surface analysis via X-ray photoelectron microscopy. To determine the performance variation according to the alteration in the surface composition of the IGZO thin films, we investigated the changes in the work function, surface energy, and surface roughness through ultraviolet photoelectron spectroscopy, contact angle measurement, and atomic force microscopy, respectively. After the plasma etching process, the change in work function was up to 280 meV, the thin film surface became slightly hydrophilic, and the surface roughness slightly decreased. This work suggests that plasma etching causes various changes in thin-film surfaces, which affects device performance.

Film Crystallographic Texture and Substrate Urface Roughness in Layered Aluminum Metallization

1996 ◽  
Vol 428 ◽  
Author(s):  
K. P. Rodbell ◽  
V. Svilan ◽  
L. M. Gignac ◽  
P. W. Dehaven ◽  
R. J. Murphy ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Crystallographic Texture ◽  
Crystallographic Orientation ◽  
Substrate Surface ◽  
Deposition Process ◽  
Growth Direction ◽  
Oxide Surface ◽  
Al Alloy ◽  
X Ray ◽  
Substrate Surface Roughness

AbstractMaterial anisotropy implies that many film properties are affected by crystallographic orientation in the growth direction (out-of-plane texture) and / or in the plane of growth (in-plane texture). Physical vapor deposited (PVD) Ti and Al-alloy films deposited on silicon dioxide substrates typically exhibit strong fiber textures in the growth direction with little in-plane-texture observed. The strength of these fiber textures has been found to vary substantially depending on the details of the deposition process(es) and, to a lesser degree, on any post-deposition anneals. In this paper the role of the substrate surface roughness in defining film texture is reported. It was found that the substrate surface roughness determines the overlying film crystallographic orientation for Ti and Ti/AlCu films deposited on various oxides. Furthermore, it was found that the texture of the initial metal “seed” layer defines the texture in subsequently deposited films (texture inheritance). Modifications to the oxide surface which decrease the surface roughness lead to an improved crystallographic texture in Ti, AlCu, Ti/AlCu and Ti/TiN/AlCu films. Film orientation was determined from crystallographic pole figures measured using x-ray diffraction (XRD). The oxide surface roughness was measured using atomic force microscopy (AFM), transmission electron microscopy (TEM) and glancing incidence x-ray reflectivity (GIXR).

Sign in / Sign up

Export Citation Format

Share Document