Synthesis and Properties of Cobalt Nanowires

2007 ◽  
Author(s):  
Jianyu Liang ◽  
Zhenhai Xia
Keyword(s):  
Electron Microscopy ◽  
Nanowire Array ◽  
Atomic Scale ◽  
Metal Nanowires ◽  
Fabrication Method ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Active Research ◽  
And Behavior ◽  
Metal Nanowire

Understanding the structure and properties of metal nanowires is critical for the atomic-scale manipulation, design and application of those materials. Currently, active research on structure and behavior of various metallic nanowires has been carried out by computer simulation. Much experimental work has been done for synthesizing various metal nanowires by many different methods. To experimentally explore the mechanism of the behavior of and the development of structures in the nanowires, it is desirable to have the capability of synthesis various metal nanowires with controlled size, length, uniformity and aspect ratio. It is also desirable to further process those metal nanowires to engineer their properties. In our study, a template assisted fabrication method has been employed to fabricate various metal nanowire arrays, including cobalt, iron and nickel. This fabrication method offers us command over the size and length of the nanowires with excellent uniformity. Heat treatments were used to further process the metal nanowires. The structure of cobalt nanowire array has been investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Mechanical properties of the metal nanowire array will be investigated through nanoindentation and atomic force microscopy (AFM).

Correlative atomic-force microscopy and high-resolution scanning electron microscopy of proteins attached to platelet surfaces

1993 ◽  
Vol 51 ◽  
pp. 230-231
Author(s):  
S.R. Simmons ◽  
S.J. Eppell ◽  
R.E. Marchant ◽  
R.M. Albrecht
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Resolution ◽  
Low Voltage ◽  
Atomic Scale ◽  
Biological Macromolecules ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Scanning Electron

The atomic force microscope (AFM) has provided images at submolecular or atomic scale resolution of biological macromolecules attached to surfaces such as mica, graphite, or synthetic phospholipid membranes. Because the AFM can be operated with the sample in air, vacuum, or immersed in a liquid such as a biological buffer, it has the potential for high resolution imaging of the structure and organization of macromolecules on surfaces of cells in the hydrated or even living state. Realization of this potential would allow observation of molecular processes at the cell surface without the necessity for preparation of the sample for electron microscopy. To date, however, the AFM has yielded images of cell surfaces only at relatively low magnifications, and has not provided the atomic resolution achieved on hard, crystalline surfaces.Previously we have utilized correlative video-enhanced light microscopy, high voltage transmission electron microscopy, and low voltage, high resolution scanning electron microscopy (HRSEM)

Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films

1994 ◽  
Vol 52 ◽  
pp. 796-797
Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Scale ◽  
Island Growth ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Mgo Substrate

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.

scholarly journals The Domain and Microstructure of Resin-Bonded Magnets

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 2849
Author(s):  
Marcin Jan Dośpiał
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Size Distribution ◽  
Domain Structure ◽  
Grain Size Distribution ◽  
Exchange Interactions ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Scanning Electron

This paper presents domain and structure studies of bonded magnets made from nanocrystalline Nd-(Fe, Co)-B powder. The structure studies were investigated using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Mössbauer spectroscopy and X-ray diffractometry. On the basis of performed qualitative and quantitative phase composition studies, it was found that investigated alloy was mainly composed of Nd2(Fe-Co)14B hard magnetic phase (98 vol%) and a small amount of Nd1.1Fe4B4 paramagnetic phase (2 vol%). The best fit of grain size distribution was achieved for the lognormal function. The mean grain size determined from transmission electron microscopy (TEM) images on the basis of grain size distribution and diffraction pattern using the Bragg equation was about ≈130 nm. HRTEM images showed that over-stoichiometric Nd was mainly distributed on the grain boundaries as a thin amorphous border of 2 nm in width. The domain structure was investigated using a scanning electron microscope and metallographic light microscope, respectively, by Bitter and Kerr methods, and by magnetic force microscopy. Domain structure studies revealed that the observed domain structure had a labyrinth shape, which is typically observed in magnets, where strong exchange interactions between grains are present. The analysis of the domain structure in different states of magnetization revealed the dynamics of the reversal magnetization process.

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

1995 ◽  
Vol 403 ◽  
Author(s):  
G. Bai ◽  
S. Wittenbrock ◽  
V. Ochoa ◽  
R. Villasol ◽  
C. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Interconnects ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractCu has two advantages over Al for sub-quarter micron interconnect application: (1) higher conductivity and (2) improved electromigration reliability. However, Cu diffuses quickly in SiO2and Si, and must be encapsulated. Polycrystalline films of Physical Vapor Deposition (PVD) Ta, W, Mo, TiN, and Metal-Organo Chemical Vapor Deposition (MOCVD) TiN and Ti-Si-N have been evaluated as Cu diffusion barriers using electrically biased-thermal-stressing tests. Barrier effectiveness of these thin films were correlated with their physical properties from Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Secondary Electron Microscopy (SEM), and Auger Electron Spectroscopy (AES) analysis. The barrier failure is dominated by “micro-defects” in the barrier film that serve as easy pathways for Cu diffusion. An ideal barrier system should be free of such micro-defects (e.g., amorphous Ti-Si-N and annealed Ta). The median-time-to-failure (MTTF) of a Ta barrier (30 nm) has been measured at different bias electrical fields and stressing temperatures, and the extrapolated MTTF of such a barrier is > 100 year at an operating condition of 200C and 0.1 MV/cm.

Development of Ge Nanoparticles Embedded in GeO2 Matrix

2008 ◽  
Vol 8 (8) ◽  
pp. 4081-4085 ◽  
Author(s):  
Y. Batra ◽  
D. Kabiraj ◽  
D. Kanjilal
Keyword(s):  
Electron Microscopy ◽  
Annealing Temperature ◽  
Spectroscopic Studies ◽  
Electron Beam Evaporation ◽  
Granular Structure ◽  
Raman Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Ge Nanocrystals

Germanium (Ge) nanoparticles have attracted a lot of attention due to their excellent optical properties. In this paper, we report on the formation of Ge nanoparticles embedded in GeO2 matrix prepared by electron beam evaporation and subsequent annealing. Transmission electron microscopy (TEM) studies clearly indicate the formation of Ge nanocrystals in the films annealed at 500 °C. Fourier transform infrared (FTIR) spectroscopic studies are carried out to verify the evolution of the structure after annealingat each stage. Micro-Raman analysis also confirms the formation of Ge nanoparticles in the annealed films. Development of Ge nanoparticles is also established by photoluminescence (PL) analysis. Surface morphology study is carried out by atomic force microscopy (AFM). It shows the evolution of granular structure of the films with increasing annealing temperature.

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