A linear “extrinsic” compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime

2019 ◽  
Author(s):  
Valentin O. Turin ◽  
Roman S. Shkarlat ◽  
Michael S. Shure ◽  
Oleg N. Kshensky ◽  
Vyacheslav N. Poyarkov ◽  
...  
Keyword(s):  
Drain Current ◽  
Compact Model ◽  
Asymptotic Dependence ◽  
Saturation Regime ◽  
Short Channel ◽  
Drain Bias

Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors

2017 ◽  
Vol 64 (1) ◽  
pp. 66-72 ◽  
Author(s):  
Theodoros A. Oproglidis ◽  
Andreas Tsormpatzoglou ◽  
Dimitrios H. Tassis ◽  
Theano A. Karatsori ◽  
Sylvain Barraud ◽  
...  
Keyword(s):  
Drain Current ◽  
Compact Model ◽  
Short Channel ◽  
Junctionless Transistors

scholarly journals Direct white noise characterization of short-channel MOSFETs

2020 ◽  
Author(s):  
Kenji Ohmori ◽  
Shuhei Amakawa
Keyword(s):  
White Noise ◽  
Shot Noise ◽  
Noise Suppression ◽  
Noise Figure ◽  
Drain Current ◽  
Fano Factor ◽  
Short Channel ◽  
Drain Bias ◽  
Noise Characterization ◽  
First Time

On-wafer evaluation of white thermal and shot noise in nanoscale MOSFETs is demonstrated by directly sensing the drain current under zero- and nonzsero-drain-bias (V<sub>d</sub>) conditions for the first time, without recourse to a hot noise source, commonly needed in noise figure measurement. The dependence of white noise intensity on the drain bias clearly shows thermal noise at V<sub>d</sub>=0 V and shot noise at V<sub>d</sub>>0 V with its gate-bias-dependent suppression. An empirical expression for the Fano factor (shot-noise suppression factor) that is well-behaved even at V<sub>d</sub>=0V exactly and suitable for measurement-based evaluation is proposed. The direct measurement approach could allow more accurate and predictive noise modeling of RF MOSFETs than has conventionally been possible.

scholarly journals Direct white noise characterization of short-channel MOSFETs

2020 ◽  
Author(s):  
Kenji Ohmori ◽  
Shuhei Amakawa
Keyword(s):  
White Noise ◽  
Shot Noise ◽  
Noise Suppression ◽  
Noise Figure ◽  
Drain Current ◽  
Fano Factor ◽  
Short Channel ◽  
Drain Bias ◽  
Noise Characterization ◽  
First Time

On-wafer evaluation of white thermal and shot noise in nanoscale MOSFETs is demonstrated by directly sensing the drain current under zero- and nonzsero-drain-bias (V<sub>d</sub>) conditions for the first time, without recourse to a hot noise source, commonly needed in noise figure measurement. The dependence of white noise intensity on the drain bias clearly shows thermal noise at V<sub>d</sub>=0 V and shot noise at V<sub>d</sub>>0 V with its gate-bias-dependent suppression. An empirical expression for the Fano factor (shot-noise suppression factor) that is well-behaved even at V<sub>d</sub>=0V exactly and suitable for measurement-based evaluation is proposed. The direct measurement approach could allow more accurate and predictive noise modeling of RF MOSFETs than has conventionally been possible.

scholarly journals A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation

2001 ◽  
Vol 24 (1) ◽  
pp. 23-29
Author(s):  
A. El Abbassi ◽  
Y. Amhouche ◽  
K. Raïs ◽  
R. Rmaily
Keyword(s):  
Physical Model ◽  
Drain Current ◽  
Experimental Characteristic ◽  
Saturation Regime ◽  
Short Channel ◽  
Simple Method ◽  
Velocity Saturation

In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and saturation regime respectively. Therefore, the MOSFET characteristicId0(Vd). avoiding velocity saturation phenomena, can be obtained from ohmic characteristicId(Vg)and compared with the experimental characteristicId(Vd).

scholarly journals Direct white noise characterization of short-channel MOSFETs

2021 ◽  
Author(s):  
Kenji Ohmori ◽  
Shuhei Amakawa
Keyword(s):  
White Noise ◽  
Shot Noise ◽  
Noise Suppression ◽  
Noise Figure ◽  
Drain Current ◽  
Fano Factor ◽  
Short Channel ◽  
Drain Bias ◽  
Noise Characterization ◽  
First Time

On-wafer evaluation of white thermal and shot noise in nanoscale MOSFETs is demonstrated by directly sensing the drain current under zero- and nonzsero-drain-bias (V<sub>d</sub>) conditions for the first time, without recourse to a hot noise source, commonly needed in noise figure measurement. The dependence of white noise intensity on the drain bias clearly shows thermal noise at V<sub>d</sub>=0 V and shot noise at V<sub>d</sub>>0 V with its gate-bias-dependent suppression. An empirical expression for the Fano factor (shot-noise suppression factor) that is well-behaved even at V<sub>d</sub>=0V exactly and suitable for measurement-based evaluation is proposed. The direct measurement approach could allow more accurate and predictive noise modeling of RF MOSFETs than has conventionally been possible.

Compact Model of Drain Current in Short-Channel Triple-Gate FinFETs

2012 ◽  
Vol 59 (7) ◽  
pp. 1891-1898 ◽  
Author(s):  
N. Fasarakis ◽  
A. Tsormpatzoglou ◽  
D. H. Tassis ◽  
I. Pappas ◽  
K. Papathanasiou ◽  
...  
Keyword(s):  
Drain Current ◽  
Compact Model ◽  
Short Channel

scholarly journals Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models

2018 ◽  
Vol 201 ◽  
pp. 01002
Author(s):  
Aanand ◽  
Gene Sheu ◽  
Syed Sarwar Imam ◽  
Shao Wei Lu ◽  
Shao-Ming Yang ◽  
...  
Keyword(s):  
Quantum Mechanics ◽  
Gate Voltage ◽  
Drain Current ◽  
Sensitivity Study ◽  
Compact Model ◽  
Current Sensitivity ◽  
Back Gate ◽  
Mechanics Model ◽  
Theoretical Predictions ◽  
Current Characteristics

In this paper, we report nanowire drain saturation current sensitivity property to measure femtomol level change in drain current due to different proteins i.e. DNA with numerical simulation and fabricated polysilicon nanowire based on the theoretical predictions. In addition, the drain current will also be affected by the back-gate voltage and will increase as the back-gate voltage increases. A 3-dimensional Synopsis tool is used to investigate the drain current behavior for a polysilicon nanowire. The scattering compact model reported result of detailed numerical calculation shows in good agreement, indicating the usefulness of scattering compact model. Whereas 3D synopsis unable to explain the whole region of the drain current characteristics in linear region which uses quantum mechanics model approach.

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