scholarly journals A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation

2001 ◽  
Vol 24 (1) ◽  
pp. 23-29
Author(s):  
A. El Abbassi ◽  
Y. Amhouche ◽  
K. Raïs ◽  
R. Rmaily
Keyword(s):  
Physical Model ◽  
Drain Current ◽  
Experimental Characteristic ◽  
Saturation Regime ◽  
Short Channel ◽  
Simple Method ◽  
Velocity Saturation

In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and saturation regime respectively. Therefore, the MOSFET characteristicId0(Vd). avoiding velocity saturation phenomena, can be obtained from ohmic characteristicId(Vg)and compared with the experimental characteristicId(Vd).

Hot Carrier Effects in Deep Submicron Nmosfets

1996 ◽  
Vol 428 ◽  
Author(s):  
Abhijit Phanse ◽  
Samar Saha
Keyword(s):  
Electric Fields ◽  
Channel Length ◽  
Deep Submicron ◽  
Short Channel ◽  
Hot Carrier ◽  
Velocity Saturation ◽  
Substrate Current ◽  
Hot Carrier Effects ◽  
Saturation Effects ◽  
Channel Lengths

AbstractThis paper addresses hot-carrier related reliability issues in deep submicron silicon nMOSFET devices. In order to monitor the hot-carrier induced device degradation, the substrate current was measured for devices with varying channel lengths (20 um - 0.24 um) under various biasing conditions. Deep submicron devices experience velocity saturation of channel carriers due to extremely high lateral electric fields. To evaluate the effects of velocity saturation in the channel, the pinch-off length in the channel was extracted for all the devices of the target technology. It was observed that for very short channel devices, carriers in most of the channel experience velocity saturation and almost the entire channel gets pinched off. It is shown in this paper that for very short channel devices, the pinch-off length in the channel is limited by the effective channel length, and that velocity saturation effects are critical to the transport of channel carriers.

scholarly journals The Effect of Doping on Different FET Structures: MOSFET, TFET and FinFET

2020 ◽  
Vol 9 (6) ◽  
pp. 972-979
Keyword(s):  
Drain Current ◽  
Channel Length ◽  
Short Channel Effects ◽  
Poor Control ◽  
Short Channel ◽  
Circuit Performance ◽  
The Past ◽  
Channel Effects ◽  
Circuit Density ◽  
Effect Of Doping

MOSFET have been scaled down over the past few years in order to give rise to high circuit density and increase the speed of circuit. But scaling of MOSFET leads to issues such as poor control gate over the current which depends on gate voltage. Many short channel effects (SCE) influence the circuit performance and leads to the indeterminist response of drain current. These effects can be decreased by gate excitation or by using multiple gates and by offering better control gate the device parameters. In Single gate MOSFET, gate electric field decreases but multigate MOSFET or FinFET provides better control over drain current. In this paper, different FET structures such as MOSFET, TFET and FINFET are designed at 22nm channel length and effect of doping had been evaluated and studied. To evaluate the performance donor concentration is kept constant and acceptor concentration is varied.

Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors

2017 ◽  
Vol 64 (1) ◽  
pp. 66-72 ◽  
Author(s):  
Theodoros A. Oproglidis ◽  
Andreas Tsormpatzoglou ◽  
Dimitrios H. Tassis ◽  
Theano A. Karatsori ◽  
Sylvain Barraud ◽  
...  
Keyword(s):  
Drain Current ◽  
Compact Model ◽  
Short Channel ◽  
Junctionless Transistors
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