Compact Model of Drain Current in Short-Channel Triple-Gate FinFETs

2012 ◽  
Vol 59 (7) ◽  
pp. 1891-1898 ◽  
Author(s):  
N. Fasarakis ◽  
A. Tsormpatzoglou ◽  
D. H. Tassis ◽  
I. Pappas ◽  
K. Papathanasiou ◽  
...  
Keyword(s):  
Drain Current ◽  
Compact Model ◽  
Short Channel

Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors

2017 ◽  
Vol 64 (1) ◽  
pp. 66-72 ◽  
Author(s):  
Theodoros A. Oproglidis ◽  
Andreas Tsormpatzoglou ◽  
Dimitrios H. Tassis ◽  
Theano A. Karatsori ◽  
Sylvain Barraud ◽  
...  
Keyword(s):  
Drain Current ◽  
Compact Model ◽  
Short Channel ◽  
Junctionless Transistors

scholarly journals Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models

2018 ◽  
Vol 201 ◽  
pp. 01002
Author(s):  
Aanand ◽  
Gene Sheu ◽  
Syed Sarwar Imam ◽  
Shao Wei Lu ◽  
Shao-Ming Yang ◽  
...  
Keyword(s):  
Quantum Mechanics ◽  
Gate Voltage ◽  
Drain Current ◽  
Sensitivity Study ◽  
Compact Model ◽  
Current Sensitivity ◽  
Back Gate ◽  
Mechanics Model ◽  
Theoretical Predictions ◽  
Current Characteristics

In this paper, we report nanowire drain saturation current sensitivity property to measure femtomol level change in drain current due to different proteins i.e. DNA with numerical simulation and fabricated polysilicon nanowire based on the theoretical predictions. In addition, the drain current will also be affected by the back-gate voltage and will increase as the back-gate voltage increases. A 3-dimensional Synopsis tool is used to investigate the drain current behavior for a polysilicon nanowire. The scattering compact model reported result of detailed numerical calculation shows in good agreement, indicating the usefulness of scattering compact model. Whereas 3D synopsis unable to explain the whole region of the drain current characteristics in linear region which uses quantum mechanics model approach.

scholarly journals The Effect of Doping on Different FET Structures: MOSFET, TFET and FinFET

2020 ◽  
Vol 9 (6) ◽  
pp. 972-979
Keyword(s):  
Drain Current ◽  
Channel Length ◽  
Short Channel Effects ◽  
Poor Control ◽  
Short Channel ◽  
Circuit Performance ◽  
The Past ◽  
Channel Effects ◽  
Circuit Density ◽  
Effect Of Doping

MOSFET have been scaled down over the past few years in order to give rise to high circuit density and increase the speed of circuit. But scaling of MOSFET leads to issues such as poor control gate over the current which depends on gate voltage. Many short channel effects (SCE) influence the circuit performance and leads to the indeterminist response of drain current. These effects can be decreased by gate excitation or by using multiple gates and by offering better control gate the device parameters. In Single gate MOSFET, gate electric field decreases but multigate MOSFET or FinFET provides better control over drain current. In this paper, different FET structures such as MOSFET, TFET and FINFET are designed at 22nm channel length and effect of doping had been evaluated and studied. To evaluate the performance donor concentration is kept constant and acceptor concentration is varied.

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