The thermodynamics of the vaporization of liquid indium(I) bromide by modified entrainment

1991 ◽  
Vol 69 (9) ◽  
pp. 1394-1397 ◽  
Author(s):  
Peter J. Gardner ◽  
Steve R. Preston
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
Key Words ◽  
Vapour Pressure ◽  
Carrier Gas ◽  
Temperature Range ◽  
Liquid Indium

The transport of gaseous In(I)Br in an argon carrier gas was studied in the temperature range 680 to 935 K by the modified entrainment method. Combination of the entrainment results with a literature equation for the total vapour pressure above the liquid gave the following expressions for the temperature dependence of the vapour pressures of the monomer (In2Br2) and dimer (In2Br2) respectively: [Formula: see text] ln T − 0.001164 ± 0.00021)T, (680 −950 K) and [Formula: see text] (680–810 K); p0 = 105 Pa. The dimer concentration is ca. 14% at 680 K and decreases to ca. 4% at 810 K. Key words: high temperature thermodynamics, indium(I) bromide, vaporization thermodynamics.

The thermodynamics of the vaporization of liquid indium(I) iodide by modified entrainment

1992 ◽  
Vol 70 (11) ◽  
pp. 2699-2703 ◽  
Author(s):  
Peter J. Gardner ◽  
Steve R. Preston
Keyword(s):  
Temperature Dependence ◽  
Vapour Pressure ◽  
Carrier Gas ◽  
Temperature Range ◽  
Liquid Indium

The transport of gaseous In(I)I in an argon carrier gas was studied in the temperature range 723–887 K by the modified entrainment method. Combination of the entrainment results with a literature equation for the total vapour pressure above the liquid gave the following expressions for the temperature dependence of the vapour pressures of the monomer (InI) and dimer (In2I2) respectively: [Formula: see text] and [Formula: see text]; p0 = 105 Pa. The dimer concentration is ca. 2% and nearly constant from 720 to 810 K.

Heating device for high temperature X-ray powder diffraction studies under controlled water vapour pressure (0–1000 mbar) and gas temperature (20–200 °C)

2000 ◽  
Vol 15 (1) ◽  
pp. 30-37 ◽  
Author(s):  
Martin Oetzel ◽  
Franz-Dieter Scherberich ◽  
Gernot Heger
Keyword(s):  
High Temperature ◽  
Water Vapour ◽  
Environmental Conditions ◽  
Vapour Pressure ◽  
Water Vapour Pressure ◽  
Gas Temperature ◽  
X Ray ◽  
Temperature Range ◽  
Heating Device ◽  
Dehydration Reactions

In this paper we present a high temperature heating device, working under defined environmental conditions, for a Siemens D500 Bragg–Brentano powder diffractometer. The powder sample is prepared in a flat mould on a metal block consisting either of copper or of platinum depending on the temperature range selected for investigations. Although the heating cell can be used separately under ambient conditions up to sample temperatures of 1000 °C, it is possible to work under defined environmental conditions in the temperature range between 20 and 200 °C and up to a water vapour pressure of 1000 mbar. For that purpose a special cover for the in situ control of temperature and water vapour pressure has been constructed. It is important to note that the three sample conditions (sample temperature, gas temperature, and gas humidity) can be adjusted separately by the user. Current studies have shown that the described X-ray heating device is a powerful tool to study dehydration reactions in the frame of fundamental research as well as to understand industrially relevant processes concerning dehydration reactions and their mechanisms.

Temperature Dependence of Electrical Properties of NiO Thin Films for Resistive Random Access Memory

2008 ◽  
Vol 1071 ◽  
Author(s):  
Ryota Suzuki ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Electrical Properties ◽  
Temperature Dependence ◽  
Random Access ◽  
High Resistance State ◽  
Resistive Random Access Memory ◽  
Temperature Range ◽  
Temperature Application ◽  
Resistance State

AbstractTemperature dependence of electrical properties in NiO thin films for ReRAM applications has been investigated. I-V measurements have been carried out in the temperature range from 100K to 523K. The resistance in the high resistance state (HRS) is almost independent of temperature below 250K, whereas it decreases with an activation energy of 300 meV above 250K. Hopping conduction and band conduction may be dominant in the low- and high-temperature range, respectively. Admittance spectroscopy on the NiO/n+-Si structure¡¡reveals the existence of a high density of traps, which may contribute to the conduction in HRS. In the low resistance state (LRS), however, the resistance slightly increased in the whole temperature range and the trend is similar to that of metallic Ni film, indicating the metallic Ni defects is related to the conduction in LRS. The Pt/NiO/Pt structure demonstrated stable resistance switching even at temperature as high as 250°C or higher. Since other competitive nonvolatile memories will face severe difficulty in high-temperature operation, the present ReRAM shows promise for high-temperature application.

Thermodynamical detection of hydrophobic hydration of tris(2,4-pentanedionato)-cobalt(III) and tris(3,5-heptanedionato)cobalt(III) in water

1991 ◽  
Vol 69 (9) ◽  
pp. 1388-1393 ◽  
Author(s):  
Yasuki Yoshimura
Keyword(s):  
Free Energy ◽  
Aqueous Solutions ◽  
Temperature Dependence ◽  
Key Words ◽  
Thermodynamic Parameters ◽  
Hydrophobic Hydration ◽  
Thermodynamic Quantities ◽  
Temperature Range ◽  
Entropy Formula ◽  
Energy Formula

The solubilities of tris(2,4-pentanedionato)cobalt(III) and tris(3,5-heptanedionato)cobalt(III) in water, heptane, and 1,2-ethanediol were determined over the temperature range 5–50 °C and from these data the thermodynamic quantities of solution at 25 °C were estimated. The free energy [Formula: see text], enthalpy [Formula: see text], and entropy [Formula: see text] of transfer of these chelates from heptane to some solvents were calculated from the corresponding thermodynamic quantities of solution. When [Formula: see text] and [Formula: see text] were separately plotted against [Formula: see text], the data of transfer from heptane to water deviated markedly from a correlation obtained for the data of transfer to the solvents other than water. This finding indicates that these chelates are subject to hydrophobic hydration in their aqueous solutions. The solubility of tris(glycinato)cobalt(III) in water was also determined over the temperature range 5–60 °C and its temperature dependence of the solubility is compared with that for the cobalt(III) chelates of the β-diketones. Key words: tris cobalt(III) chelates of β-diketones and glycine, temperature dependence of solubility, thermodynamic parameters of solution, thermodynamic parameters of transfer, hydrophobic hydration.

scholarly journals High-Temperature Evolution of the Magnetization of Aluminum Reduction Cell Steel

2021 ◽  
pp. 5-11
Author(s):  
Dmitry A. Balaev ◽  
Sergei V. Semenov ◽  
Sergei N. Varnakov ◽  
Evgeniy Yu. Radionov ◽  
Yaroslav Al. Tretyakov
Keyword(s):  
Magnetic Properties ◽  
High Temperature ◽  
Temperature Dependence ◽  
Saturation Magnetization ◽  
Aluminum Reduction Cell ◽  
Structural Element ◽  
Aluminum Reduction ◽  
Quadratic Dependence ◽  
Temperature Range ◽  
Reduction Cell

The magnetic properties of steel of a structural element of an aluminum reduction cell have been investigated in the temperature range of 300–900 K. The analysis of the temperature dependence of the saturation magnetization MS(T) showed (i) the applicability of the Bloch’s 3=2 law and a reason- able value of the Bloch’s constant for steel and (ii) the quadratic dependence MS(T) (1 - T2) in the temperature range of 380–700 K.

scholarly journals Hydration/Dehydration Behavior of Hydroxyethyl Cellulose Ether in Aqueous Solution

Molecules ◽  
2020 ◽  
Vol 25 (20) ◽  
pp. 4726
Author(s):  
Kengo Arai ◽  
Toshiyuki Shikata
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
Wide Temperature Range ◽  
Water Solubility ◽  
Hydration Number ◽  
Hydroxyethyl Cellulose ◽  
Cellulose Ethers ◽  
Temperature Range ◽  
Cloud Points ◽  
Dehydration Behavior

Hydroxyethyl cellulose (HeC) maintains high water solubility over a wide temperature range even in a high temperature region where other nonionic chemically modified cellulose ethers, such as methyl cellulose (MC) and hydroxypropylmethyl cellulose (HpMC), demonstrate cloud points. In order to clarify the reason for the high solubility of HeC, the temperature dependence of the hydration number per glucopyranose unit, nH, for the HeC samples was examined by using extremely high frequency dielectric spectrum measuring techniques up to 50 GHz over a temperature range from 10 to 70 °C. HeC samples with a molar substitution number (MS) per glucopyranose unit by hydroxyethyl groups ranging from 1.3 to 3.6 were examined in this study. All HeC samples dissolve into water over the examined temperature range and did not show their cloud points. The value of nH for the HeC sample possessing the MS of 1.3 was 14 at 20 °C and decreased gently with increasing temperature and declined to 10 at 70 °C. The nH values of the HeC samples are substantially larger than the minimum critical nH value of ca. 5 necessary to be dissolved into water for cellulose ethers such as MC and HpMC, even in a high temperature range. Then, the HeC molecules possess water solubility over the wide temperature range. The temperature dependence of nH for the HeC samples and triethyleneglycol, which is a model compound for substitution groups of HeC, is gentle and they are similar to each other. This observation strongly suggests that the hydration/dehydration behavior of the HeC samples was essentially controlled by that of their substitution groups.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

ABOUT HEAT CAPACITY OF TITANIUM CARBIDE TiCx

2019 ◽  
pp. 56-66
Author(s):  
I. Khidirov ◽  
V. V. Getmanskiy ◽  
A. S. Parpiev ◽  
Sh. A. Makhmudov
Keyword(s):  
Heat Capacity ◽  
High Temperature ◽  
Titanium Carbide ◽  
Temperature Dependence ◽  
Carbon Concentration ◽  
Room Temperature ◽  
Thermodynamic Characteristics ◽  
Liquid Nitrogen Temperature ◽  
Analysis Data ◽  
Thermal Excitation

This work relates to the field of thermophysical parameters of refractory interstitial alloys. The isochoric heat capacity of cubic titanium carbide TiCx has been calculated within the Debye approximation in the carbon concentration  range x = 0.70–0.97 at room temperature (300 K) and at liquid nitrogen temperature (80 K) through the Debye temperature established on the basis of neutron diffraction analysis data. It has been found out that at room temperature with decrease of carbon concentration the heat capacity significantly increases from 29.40 J/mol·K to 34.20 J/mol·K, and at T = 80 K – from 3.08 J/mol·K to 8.20 J/mol·K. The work analyzes the literature data and gives the results of the evaluation of the high-temperature dependence of the heat capacity СV of the cubic titanium carbide TiC0.97 based on the data of neutron structural analysis. It has been proposed to amend in the Neumann–Kopp formula to describe the high-temperature dependence of the titanium carbide heat capacity. After the amendment, the Neumann–Kopp formula describes the results of well-known experiments on the high-temperature dependence of the heat capacity of the titanium carbide TiCx. The proposed formula takes into account the degree of thermal excitation (a quantized number) that increases in steps with increasing temperature.The results allow us to predict the thermodynamic characteristics of titanium carbide in the temperature range of 300–3000 K and can be useful for materials scientists.

NICKELVAC L-605

Alloy Digest ◽  
1967 ◽  
Vol 16 (10) ◽  
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Base Alloy ◽  
Heat Treating ◽  
Temperature Range ◽  
Temperature Performance ◽  
Cobalt Base Alloy ◽  
Cobalt Base

Abstract NICKELVAC L-605 is a double vacuum melted, cobalt-base alloy for high temperature applications. It is recommended for highly stressed parts operating in the temperature range of 1700 to 2000 F. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as creep and fatigue. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: Co-53. Producer or source: Allvac Metals Company, A Teledyne Company.

Study on characteristics of schottky temperature detector based on metal/n-ZnO/n-Si structures

2020 ◽  
Vol 12 ◽  
Author(s):  
Fang Wang ◽  
Jingkai Wei ◽  
Caixia Guo ◽  
Tao Ma ◽  
Linqing Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Measurement ◽  
Temperature Response ◽  
Large Temperature ◽  
Mems Devices ◽  
Temperature Range ◽  
Response Characteristics ◽  
High Temperature Measurement ◽  
Temperature Detector ◽  
Schottky Structure

Background: At present, the main problems of Micro-Electro-Mechanical Systems (MEMS) temperature detector focus on the narrow range of temperature detection, difficulty of the high temperature measurement. Besides, MEMS devices have different response characteristics for various surrounding temperature in the petrochemical and metallurgy application fields with high-temperature and harsh conditions. To evaluate the performance stability of the hightemperature MEMS devices, the real-time temperature measurement is necessary. Objective: A schottky temperature detector based on the metal/n-ZnO/n-Si structures is designed to measure high temperature (523~873K) for the high-temperature MEMS devices with large temperature range. Method: By using the finite element method (FEM), three different work function metals (Cu, Ni and Pt) contact with the n-ZnO are investigated to realize Schottky. At room temperature (298K) and high temperature (523~873K), the current densities with various bias voltages (J-V) are studied. Results: The simulation results show that the high temperature response power consumption of three schottky detectors of Cu, Ni and Pt decreases successively, which are 1.16 mW, 63.63 μW and 0.14 μW. The response temperature sensitivities of 6.35 μA/K, 0.78 μA/K, and 2.29 nA/K are achieved. Conclusion: The Cu/n-ZnO/n-Si schottky structure could be used as a high temperature detector (523~873K) for the hightemperature MEMS devices. It has a large temperature range (350K) and a high response sensitivity is 6.35 μA/K. Compared with traditional devices, the Cu/n-ZnO/n-Si Schottky structure based temperature detector has a low energy consumption of 1.16 mW, which has potential applications in the high-temperature measurement of the MEMS devices.

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