scholarly journals Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Xin Chen ◽  
Jianqi Dong ◽  
Chenguang He ◽  
Longfei He ◽  
Zhitao Chen ◽  
...  
Keyword(s):  
Low Cost ◽  
High Electron Mobility Transistors ◽  
Electrical Performance ◽  
Full Potential ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Piezotronic Effect ◽  
Lift Off ◽  
Gan Heterostructure ◽  
Polyethylene Terephthalate Substrate

AbstractHigh-electron-mobility transistors (HEMTs) are a promising device in the field of radio frequency and wireless communication. However, to unlock the full potential of HEMTs, the fabrication of large-size flexible HEMTs is required. Herein, a large-sized (> 2 cm2) of AlGaN/AlN/GaN heterostructure-based HEMTs were successfully stripped from sapphire substrate to a flexible polyethylene terephthalate substrate by an electrochemical lift-off technique. The piezotronic effect was then induced to optimize the electron transport performance by modulating/tuning the physical properties of two-dimensional electron gas (2DEG) and phonons. The saturation current of the flexible HEMT is enhanced by 3.15% under the 0.547% tensile condition, and the thermal degradation of the HEMT was also obviously suppressed under compressive straining. The corresponding electrical performance changes and energy diagrams systematically illustrate the intrinsic mechanism. This work not only provides in-depth understanding of the piezotronic effect in tuning 2DEG and phonon properties in GaN HEMTs, but also demonstrates a low-cost method to optimize its electronic and thermal properties.

MICROWAVE GaN-BASED POWER TRANSISTORS ON LARGE-SCALE SILICON WAFERS

2003 ◽  
Vol 13 (01) ◽  
pp. 265-275
Author(s):  
S. MANOHAR ◽  
A. PHAM ◽  
J. BROWN ◽  
R. BORGES ◽  
K. LINTHICUM
Keyword(s):  
Large Scale ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Power Transistors ◽  
Electron Mobility Transistors ◽  
Gan On Si ◽  
Gan Heterostructure

This paper presents the development of microwave Gallium nitride (GaN) heterostructure field-effect transistors (HFETs) on silicon (Si). GaN-on-Si provides a low-cost manufacturable platform that could lead to the commercialization of GaN-based power devices for wireless applications. Small periphery GaN high electron mobility transistors (HEMTs) on Si exhibited a maximum drain current of 900mA/mm, a peak gm of 300 mS/mm, and a microwave output power density of 1.5 W/mm at 2 GHz. Microwave characterization and device modeling of GaN HEMTs on Si are discussed.

Fullerene-Incorporated Nanocomposite Resist System for Nanolithograpy

1999 ◽  
Vol 584 ◽  
Author(s):  
T. Ishii ◽  
H. Nozawa ◽  
E. Kuramochi ◽  
T. Tamamura
Keyword(s):  
High Electron Mobility Transistors ◽  
Resistance Pattern ◽  
High Electron ◽  
Positive Type ◽  
X Ray ◽  
Electron Mobility Transistors ◽  
Self Organized ◽  
Ordered Array ◽  
Lift Off ◽  
Fullerene Content

AbstractA nanocomposite resist system that incorporates sub-nm fullerene molecules ( C60 and/or C70) into a conventional resist material is proposed for nanolithograpy. Fullerene has physically and chemically resistant characteristics, and its incorporation reinforces the original resist film, leading to substantial improvements in resist performance: etching resistance, pattern contrast, mechanical strength and thermal resistance. We have prepared a system composed of a positive-type electron beam resist, ZEP520, and C60 or a C60/C70 mixture and through the fabrication of high electron mobility transistors (HEMTs), X-ray masks, and groove-grating mirrors for lasers with nanometer dimensions confirmed improved resist performance, particularly resolution improvements due to enhanced etching resistance. By making use of a characteristic unique to the nanocomposite, which is that sensitivity readily changes with the fullerene content due to a dissolution inhibiting effect of fullerene, we have constructed a fullerene-incorporated bilayer resist system for a lift-off process and have successfully fabricated a highly-ordered array of self-organized boxlike nanostructures and a mold for nanoprinting. Further, solubility enhancement by fullerene derivatives has been examined for a higher degree of fullerene incorporation and better sensitivity characteristics in future nanocomposite resist systems.

scholarly journals A Strategic Review on Growth of InP on Silicon Substrate for Applications in High Frequency RF Devices

2012 ◽  
pp. 51-56
Author(s):  
Umesh.P. Gomes ◽  
Mr. Kuldeep ◽  
S. Rathi ◽  
Dhrubes Biswas
Keyword(s):  
High Frequency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Superior Performance ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Strategic Review ◽  
Rf Devices

A review is presented on the advances in InAlAs/InGaAs High Electron Mobility transistors (HEMT) on silicon substrates for high frequency and low noise applications. Although InAlAs/InGaAs HEMTs on InP and GaAs substrates have been much appreciated due to their superior performance, their widespread applications have been hindered due to higher cost of the substrates. Silicon has been used as an alternative substrate considering the benefits of low cost, technological maturity and integration of III-V and silicon technology inspite of the constraints like lattice mismatch and large difference in thermal expansion coefficient.

scholarly journals High Electron Mobility Transistors Using AlGaN Materials

2019 ◽  
Author(s):  
Xiejia
Keyword(s):  
Electron Mobility ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Dimensional Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Dimensional Electron Gas

High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN layers. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire for many applications

scholarly journals AlGaN Based High Electron Mobility Transistors

2019 ◽  
Author(s):  
Yu Yun ◽  
Xiejia
Keyword(s):  
Electron Mobility ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Dimensional Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Dimensional Electron Gas

High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN layers. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire for many applications

Piezotronic Effect Modulated Flexible AlGaN/GaN High-Electron-Mobility Transistors

ACS Nano ◽  
2019 ◽  
Vol 13 (11) ◽  
pp. 13161-13168 ◽  
Author(s):  
Jiyuan Zhu ◽  
Xingyu Zhou ◽  
Liang Jing ◽  
Qilin Hua ◽  
Weiguo Hu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Piezotronic Effect

Electrical and Optical Characterization of Pseudomorphic AlGaAs/InGaAs High Electron Mobility Transistors

1991 ◽  
Vol 240 ◽  
Author(s):  
W. E. Winters ◽  
A. S. Yue ◽  
D. Streit
Keyword(s):  
Layer Thickness ◽  
Film Growth ◽  
High Electron Mobility Transistors ◽  
Electrical Performance ◽  
Current Gain ◽  
High Electron ◽  
Switching Speed ◽  
Double Crystal ◽  
Strained Layers ◽  
Electron Mobility Transistors

ABSTRACTAdvances in thin-film growth techniques have allowed the succesful fabrication of transistor devices, relying on heterostructure technology to enhance their electrical performance. Devices utilizing heterostructure epitaxy have demonstrated unity current-gain cut-off frequencies well in excess of 100 GHz and maximum oscillation frequencies beyond 200 GHz.In this paper, the AlGaAs/InGaAs pseudomorphic HEMT is studied. X-ray Double-Crystal Diffractometry and Low-Temperature Photoluminescence Spectroscopy are used to demonstrate that the InGaAs pseudomorphic layer thickness of the strained layers, did not degrade the device switching speed. This suggests that HEMT devices with higher indium contents may be permitted without having to reduce the InGaAs layer thickness due to strain accommodation requirements. Since the increase in In content lowers the electron and hole effective masses and raises the low-field mobility, higher cut-off frequencies should be possible.

scholarly journals Performance Evaluation of GaN based Thin Film Transistor using TCAD Simulation

2017 ◽  
Vol 7 (1) ◽  
pp. 144 ◽  
Author(s):  
Shashi Kant Dargar ◽  
J K Srivastava ◽  
Santosh Bharti ◽  
Abha Nyati
Keyword(s):  
Thin Film ◽  
Gallium Nitride ◽  
High Speed ◽  
Thin Film Transistor ◽  
High Electron Mobility Transistors ◽  
Electrical Performance ◽  
High Electron ◽  
Flat Panel Display ◽  
Electron Mobility Transistors ◽  
Research Activities

<p>As reported in past decades, gallium nitride as one of the most capable compound semiconductor, GaN-based high-electron mobility transistors are the focus of intense research activities in the area of high power, high-speed, and high-temperature transistors. In this paper we present a design and simulation of the GaN based thin film transistor using sentaurus TCAD for the extracting the electrical performance. The resulting GaN TFTs exhibits good electrical performance in the simulated results, including, a threshold voltage of 12-15 V, an on/off current ratio of 6.5×10<sup>7 </sup>~8.3×10<sup>8</sup>, and a sub-threshold slope of 0.44V/dec. Sentaurus TCAD simulations is the tool  which offers study of comprehensive behavior of semiconductor structures with ease. The simulation results of the TFT structure based on gallium nitride active channel have great prospective in the next-generation flat-panel display applications.</p>

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