Effects of Withdrawal Speeds on Properties of ZnO Thin Films Prepared by Sol-Gel Immerse Technique

2016 ◽  
Vol 680 ◽  
pp. 124-128 ◽  
Author(s):  
Chao Du ◽  
Yu Chun Zou ◽  
Zhi Qing Chen ◽  
Wen Kui Li ◽  
Shan Shan Luo
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
Sol Gel ◽  
Wavelength Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Photoelectric Device ◽  
Near Ir ◽  
Crystal Film ◽  
Diffraction Peaks

ZnO thin films have attractive applications in photoelectric device, due to their excellent chemical, electrical and optical properties. In this paper, ZnO thin films with good c-axis preferred orientation and high transmittance are prepared on glass sheets by sol-gel immerse technique. The effects of withdrawal speeds on the growth process of thin film crystal, film crystal orientation and the crystallinity, the optical performance were investigated by XRD, SEM and UV-Vis spectrophotometry. The results show that the thin films were composed of better hexagonal wurtzite crystals with the c-axis prepared orientation. The transmittance of prepared thin films is over 80% in the visible-near IR region from 600 nm - 800 nm. ZnO films have sharp and narrow diffraction peaks, which indicates that the materials exhibit high crystallinity. With the withdrawal speeds increasing, the grain size of ZnO thin films and the intensity for all diffraction peaks were increased gradually. The growth model is changed from the stratified structure into the island structure in the growth process. The transmittance of the thin films decrease in the visible wavelength region, with the withdrawal speeds increasing.

Effects of Annealing Temperature and Coating Layers on Properties of ZnO Thin Films Prepared by Sol-Gel Immerse Technique

2016 ◽  
Vol 697 ◽  
pp. 718-722
Author(s):  
Chao Du ◽  
Yu Chun Zou ◽  
Zhi Qing Chen ◽  
Wen Kui Li ◽  
Shan Shan Luo
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Near Ir ◽  
Diffraction Peaks ◽  
Coating Layers ◽  
Structure Properties

ZnO thin films is a kind of very potential semiconductor materials, due to their excellent chemical, electrical and optical properties. The effects of annealing temperature and coating layers on properties of ZnO thin films prepared by sol-gel immerse technique is studied in this work. The structure properties and optical properties were investigated by XRD, SEM and UV-Vis spectrophotometry respectively. It is found that the thin films were composed of better hexagonal wurtzite crystals with the c-axis preferred orientation by thermal annealing 550°C. With coating layers increasing from 2 layers to 8 layers, the intensity for all diffraction peaks were increased gradually, and the crystallite size of ZnO thin films is slightly increased. The transmittance of prepared thin films is over 80% in the visible-near IR region from 460 nm - 800 nm.

Photocatalytic Properties of ZnO and Ag Doped ZnO Thin Films

2014 ◽  
Vol 685 ◽  
pp. 3-6
Author(s):  
Ying Lian Wang ◽  
Jun Yao Ye
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Structural Features ◽  
Photocatalytic Properties ◽  
Zno Thin Films ◽  
Molar Ratio ◽  
Zno Films ◽  
Doped Zno ◽  
Excellent Adhesion

Pure ZnO thin films and Ag doped ZnO thin films were prepared on quartz substrates by sol-gel process. Structural features and UV absorption spectrum have been studied by XRD and UV-Vis-Nir scanning spectrophotometer. Taking phenol as pollutants, further study of the effect of different annealing temperature and Ag dopant amount of ZnO films on photocatalytic properties was carried out. The results showed that, the optimal annealing temperature on photocatalytic degradation of phenol in this experiment was 300 °C, the best molar ratio of ZnO and Ag was 30:1, which was better than pure ZnO film greatly. Excellent adhesion, recyclable and efficient degradation Ag doped ZnO thin films were found in this experiment.

Effect of Ruthenium Concentration on Structural and I-V Characteristics of ZnO Thin Films by Sol–Gel Method

2017 ◽  
Vol 05 (01) ◽  
pp. 1750004
Author(s):  
R. Vettumperumal ◽  
S. Kalyanaraman ◽  
R. Thangavel
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method ◽  
Doped Zno

Nanocrystalline ruthenium (Ru)-doped ZnO thin films on sapphire substrate was prepared using sol–gel method by spin coating technique. The structural and I-V characteristics of Ru doped ZnO thin films were studied from the X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) analysis and Raman spectroscopy. X-ray diffraction (XRD) results revealed that the deposited films belonged to hexagonal wurtzite structure with c-axis orientation. It is also confirmed from the Raman spectra. Enhancement of longitudinal optical (LO) phonon is observed by the strong electron–phonon interaction. An observed increment in sheet resistance with increase in dopant percentage of Ru (1–2[Formula: see text]mol%) in ZnO films was found and better I-V characteristic behavior was observed at 1[Formula: see text]mol% of Ru-doped ZnO thin films. Trap limited current flow inside the material was calculated from the log I versus log V plot in the higher voltage region.

EFFECTS OF Ge DOPING THROUGH ION IMPLANTATION ON THE STRUCTURAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY SOL-GEL TECHNIQUE

2007 ◽  
Vol 21 (31) ◽  
pp. 5257-5263 ◽  
Author(s):  
S. W. XUE ◽  
X. T. ZU ◽  
X. XIANG ◽  
M. Y. CHEN ◽  
W. G. ZHENG
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Implantation ◽  
Deep Level ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Near Band Edge ◽  
Structural And Optical Properties

ZnO thin films were first prepared by the sol–gel process, and then Ge ions were implanted into the ZnO films. The effects of ion implantation on the structural and optical properties of the ZnO films were investigated by X-ray diffraction, photoluminescence (PL), and optical transmittance measurements. Measurement results showed that the intensity of the (002) diffraction peak was decreased and the full width at half maximum was narrowed. PL emission was greatly extinguished after Ge ion implantation. Both the near band edge (NBE) excitonic UV emission at 391 nm and the defect related deep level emission centered at 470 nm in the visible region were decreased after Ge ion implantation. NBE peak and the absorption edge were observed to have a blueshift toward higher energy.

Optical and Electrical Characteristic of Layer-by-Layer Sol-Gel Spin Coated Nanoparticles ZnO Thin Films

2011 ◽  
Vol 364 ◽  
pp. 149-153 ◽  
Author(s):  
Shafinaz Sobihana Shariffudin ◽  
Farliana Samat Farah ◽  
Sukreen Hana Herman ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Reference Sample ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Layer By Layer ◽  
Voltage Measurement ◽  
Vis Spectroscopy ◽  
Reference Samples

Transparent nanoparticles ZnO thin films have been deposited on glass substrates using sol-gel spin coating technique. 0.35M sol were prepared by dissolving zinc acetate dehydrate in 2-methoxyethanol with monoethanolamine as the stabilizer. In this paper, a novel method called layer-by-layer is introduced, where the thin film is not only dried after each layer is spin-coated, but also directly annealed at 500°C to improve the electrical and optical properties of the films. Samples without annealing were also prepared as the reference sample. ZnO thin films were characterized using current-voltage measurement, UV-Vis spectroscopy and photoluminescence spectroscopy. The results revealed that layer-by-layer ZnO thin films have lower resistivity compared to the reference samples with a maximum value of 0.77Ω.cm for ZnO films deposited with 2 layers. Transmittance spectra show that the films were transparent in the visible range above 400nm with range of 86%-98% for the layer-by-layer ZnO films. The optical band gaps were between 3.2 to 3.3eV for both layer-by-layer and the reference samples. PL spectra indicate that layer-by-layer method improves the crystallinity of the films.

Synthesis, Characterization and Hall Effect Measurements of Nanocrystalline ZnO Thin Films

2012 ◽  
Vol 510-511 ◽  
pp. 186-193 ◽  
Author(s):  
Ashari Maqsood ◽  
M. Islam ◽  
M. Ikram ◽  
S. Salam ◽  
S. Ameer
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Morphological Studies ◽  
Hall Effect Measurements ◽  
Scherrer Formula

ZnO thin films were prepared by sol-gel method. Prepared thin films were then characterized by SEM, XRD, EDX and Hall effect measurements. SEM confirmed the morphological studies of ZnO thin films. Crystallite size is calculated using the Scherrer formula. Crystallite and grain sizes are obtained through XRD and SEM. EDS analysis confirms mass percentage of ZnO deposited. Decreasing trend of magneto resistance with temperature is observed. The optical transmission spectra of the solgel deposited ZnO thin films showed high transmittance (>70%) in the visible region and indicates that the transmittance of ZnO films gradually decreased as the thickness increased. Decreasing trend of resistivity and sheet resistance with thickness are also observed. The IV characterization of ZnO thin films under influence of UV and dark conditions are reported. The dc electrical resistivity data follow the hoping model.

Aluminum-Doped Zinc Oxide as Transparent Electrode Materials

2011 ◽  
Vol 685 ◽  
pp. 6-12 ◽  
Author(s):  
Yu Long Zhang ◽  
Xian Peng Zhang ◽  
Rui Qin Tan ◽  
Ye Yang ◽  
Jun Hua Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Electrode Materials ◽  
Sol Gel ◽  
Argon Plasma ◽  
Transparent Electrode ◽  
Zno Thin Films ◽  
Zno Films ◽  
Doped Zno

Pristine and Al-doped zinc oxide nanopowders were synthesized via a surfactant-assisted complex sol-gel method, possessing a pure ZnO phase structure and controllable grain size which was characterized by X-ray diffraction and scanning electron microscopy. Using these nanopowders, the pristine and Al-doped ZnO magnetron sputtering targets were prepared following a mold-press, cold isostatical-press and schedule sintering temperature procedure. The relative density of these as-prepared targets was tested by Archimedes’ method on densitometer. All of the results were above 95 theory density percents, and the resistivity was tested on four-probe system at a magnitude of 10-2Ω cm. Related pristine ZnO thin films and Al-doped ZnO thin films were fabricated by magnetron sputtering method, respectively. The pristine and Al-doped ZnO films deposited on the quartz glass by dc sputtering owned a (002) orientation with a thickness of 350 nm at a deposition power of 100 W for two hours under an argon plasma. A good optical transparency above 80% and low resistivity of 1.60×10-3Ω cm were obtained with a deposition temperature of 573 K. The optical energy bandgap could be tailored by Al doping at 4 at.% Al.

CHARACTERIZATION OF n AND p TYPE ZNO THIN FILMS DEPOSITED BY CATHODIC PULSED FILTERED VACUUM ARC SYSTEM

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1719-1724
Author(s):  
H. KAVAK ◽  
N. H. ERDOGAN ◽  
K. KARA ◽  
H. YANIS ◽  
Z. BAZ ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Wavelength Region ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Films ◽  
Zno Thin Film ◽  
Xrd Pattern ◽  
Zinc Nitride ◽  
P Type

The transparent, conductive n and p -type semiconducting ZnO thin films were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. The structural, optical and electrical properties of n and p -type ZnO thin films are investigated after annealing at 450°C. 197 nm thick n -type ZnO thin film was deposited with oxygen pressure of 8.5 × 10-4 Torr . XRD pattern of annealed ZnO thin film exhibits hexagonal structure with (100), (101) and (110) orientations. The crystallite size of semiconductor ZnO thin film is 18 nm, interplanar distance 0.16 nm and lattice constant c is 0.52 nm for (110) orientation. The optical transmittance spectra of n and p -type ZnO films are over 90% in the visible wavelength region with optical energy gap 3.3 eV. p -type ZnO thin films are produced by oxidation of PFCVAD deposited zinc nitride. Zinc nitride is deposited with nitrogen pressure of 8.6 × 10-4 Torr and the thickness of this film is 179 nm. The oxidation of zinc nitride thin films at 450°C results in hexagonal structures p -type ZnO thin films. XRD pattern of this film has the same (100), (101) and (110) orientations with the same crystalline structures as the directly deposited ZnO thin film. Hall measurements indicated that ZnO films were p -type and the highest carrier concentration of 1.08 × 1018 cm -3 and mobility of 93.53 cm2/Vs were obtained.

scholarly journals Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas via isotopic tracking

2021 ◽  
Vol 9 (12) ◽  
pp. 4307-4315
Author(s):  
Tai Nguyen ◽  
Nathalie Valle ◽  
Jérôme Guillot ◽  
Jérôme Bour ◽  
Noureddine Adjeroud ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Growth Process ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Zno Films ◽  
Layer Deposition ◽  
Oxygen Gas

The growth process of zinc oxide (ZnO) thin films by atomic layer deposition (ALD) accompanied by the presence of oxygen gas pulsing is investigated by means of the isotopic tracking of oxygen 18O from the water precursor and oxygen 16O from the gas.

Optical Characterization of Al-doped ZnO Films via Sol-gel Method Using Spectroscopic Ellipsometry

2020 ◽  
Vol 10 (5) ◽  
pp. 642-648
Author(s):  
Ehsan M. Aghkonbad ◽  
Hassan Sedghi ◽  
Maryam M. Aghgonbad
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spectroscopic Ellipsometry ◽  
Sol Gel ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
Zno Films ◽  
Promising Alternative ◽  
Gap Energy ◽  
Doped Zno

Background: Al-doped ZnO thin films are considered as a promising alternative to ITO in optoelectronic applications. In this work, Al-doped ZnO thin films were prepared using sol-gel spin coating technique. Experimental: The optical properties of the films such as refractive index, extinction coefficient, dielectric function and the absorption coefficient were examined using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. The effect of Al doping on ZnO thin films with different Al concentrations was significant. Tauc relation was used to estimate the optical band gap energy of the films. Results: The calculated values of band gap energy were obtained between 3.10 to 3.25 eV. Also the fraction of voids was calculated using Aspnes theory. Conclusion: The free carrier concentration value was obtained in the order of 1019 cm-3.

Sign in / Sign up

Export Citation Format

Share Document