HIGH INDUCTANCE COIL EMBEDDED ON MAGNETIC SENSOR CHIP FOR BIOMAGNETIC SIGNAL MEASUREMENTS

2013 ◽  
Vol 27 (26) ◽  
pp. 1350159
Author(s):  
HYUNJUNE LYU ◽  
JUN RIM CHOI
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Magnetic Sensor ◽  
Oxide Semiconductor ◽  
Sensor Chip ◽  
Instrumentation Amplifier ◽  
Cmos Process ◽  
Band Pass Filter ◽  
Current Feedback ◽  
Pass Filter ◽  
Inductance Coil

For the purpose of biomagnetic measurements, a magnetic sensor chip is manufactured using a 0.18 μm complementary metal–oxide–semiconductor (CMOS) process. A high-inductance coil and an instrumentation amplifier (IA) are embedded on this chip. The embedded high-inductance coil sensor contains suitable sensitivity and bandwidth for biomagnetic measurements, and is designed via electromagnetic field simulation. A low-gm operational transconductance amplifier (OTA) is also implemented on the chip to reduce the transconductance value. The output signal sensitivity of the magnetic sensor chip is 3.25 fT/μV, and the output reference noise is [Formula: see text]. The instrumentation amplifier is designed to minimize the magnetic signal noise using current feedback and a band-pass filter (BPF) with a bandwidth between 0.5 kHz and 5 kHz. The common-mode rejection ratio (CMRR) is measured at 117.5 dB by the Multi-Project Chip test. The proposed magnetic sensor chip is designed such that the input reference noise is maintained below 0.87 μV.

scholarly journals Fully Differential Chopper-Stabilized Multipath Current-Feedback Instrumentation Amplifier with R-2R DAC Offset Adjustment for Resistive Bridge Sensors

2019 ◽  
Vol 10 (1) ◽  
pp. 63 ◽  
Author(s):  
Yongsu Kwon ◽  
Hyungseup Kim ◽  
Jaesung Kim ◽  
Kwonsang Han ◽  
Donggeun You ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Instrumentation Amplifier ◽  
Cmos Process ◽  
Current Feedback ◽  
Readout Integrated Circuit ◽  
Fully Differential ◽  
Chopper Stabilization ◽  
Rejection Ratio

A fully differential multipath current-feedback instrumentation amplifier (CFIA) for a resistive bridge sensor readout integrated circuit (IC) is proposed. To reduce the CFIA’s own offset and 1/f noise, a chopper stabilization technique is implemented. To attenuate the output ripple caused by chopper up-modulation, a ripple reduction loop (RRL) is employed. A multipath architecture is implemented to compensate for the notch in the chopping frequency band of the transfer function. To prevent performance degradation resulting from external offset, a 12-bit R-2R digital-to-analog converter (DAC) is employed. The proposed CFIA has an adjustable gain of 16–44 dB with 5-bit programmable resistors. The proposed resistive sensor readout IC is implemented in a 0.18 μm complementary metal-oxide-semiconductor (CMOS) process. The CFIA draws 169 μA currents from a 3.3 V supply. The simulated input-referred noise and noise efficiency factor (NEF) are 28.3 nV/√Hz and 14.2, respectively. The simulated common-mode rejection ratio (CMRR) is 162 dB, and the power supply rejection ratio (PSRR) is 112 dB.

Characterization of a Smartphone’s CMOS Image Sensor Response to Radiation

2015 ◽  
Vol 742 ◽  
pp. 17-20
Author(s):  
Chao Qun Xu ◽  
Jie Jiang ◽  
Zhi Yuan Ouyang ◽  
Chuang He Qiu
Keyword(s):  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Oxide Semiconductor ◽  
Scientific Instrument ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Central Wavelength ◽  
Radiation Monitors ◽  
Logarithmic Relationship

As part of studies into the use of Smartphones as solar-radiation monitors, this article characterizes the violet response of a consumer complementary metal oxide semiconductor (CMOS)-based Smartphone image sensor in a controlled laboratory environment, with an adjustable Lamp as a radiation source, a band-pass filter (central wavelength is 400nm) covered on Smartphone camera lens and a ASD spectrometer observing synchronously. It is found that a logarithmic relationship appears between CMOS-based sensor imaging DN values and irradiance, and the red (R) component in the chromo-photograph is linearly relative to irradiance. In addition, a Smartphone can be used as a convenient and low-cost scientific instrument in the field of monitoring radiation characterization, due to its capacity to detect usable irradiances.

scholarly journals A Low-Power, Low-Noise, Resistive-Bridge Microsensor Readout Circuit with Chopper-Stabilized Recycling Folded Cascode Instrumentation Amplifier

2021 ◽  
Vol 11 (17) ◽  
pp. 7982
Author(s):  
Gyuri Choi ◽  
Hyunwoo Heo ◽  
Donggeun You ◽  
Hyungseup Kim ◽  
Kyeongsik Nam ◽  
...  
Keyword(s):  
Low Power ◽  
Low Noise ◽  
Instrumentation Amplifier ◽  
Cmos Process ◽  
Readout Circuit ◽  
Output Stage ◽  
Current Feedback ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Folded Cascode

In this paper, a low-power and low-noise readout circuit for resistive-bridge microsensors is presented. The chopper-stabilized, recycling folded cascode current-feedback instrumentation amplifier (IA) is proposed to achieve the low-power, low-noise, and high-input impedance. The chopper-stabilized, recycling folded cascode topology (with a Monticelli-style, class-AB output stage) can enhance the overall noise characteristic, gain, and slew rate. The readout circuit consists of a chopper-stabilized, recycling folded cascode IA, low-pass filter (LPF), ADC driving buffer, and 12-bit successive-approximation-register (SAR) analog-to-digital converter (ADC). The prototype readout circuit is implemented in a standard 0.18 µm CMOS process, with an active area of 12.5 mm2. The measured input-referred noise at 1 Hz is 86.6 nV/√Hz and the noise efficiency factor (NEF) is 4.94, respectively. The total current consumption is 2.23 μA, with a 1.8 V power supply.

scholarly journals A Two-Module Linear Regulator with 3.9–10 V Input, 2.5 V Output, and 500 mA Load

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1143
Author(s):  
Quanzhen Duan ◽  
Weidong Li ◽  
Shengming Huang ◽  
Yuemin Ding ◽  
Zhen Meng ◽  
...  
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Input Voltage ◽  
Low Noise ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Silicon Area ◽  
Chip Area ◽  
Linear Regulator

A linear regulator with an input range of 3.9–10 V, 2.5 V output, and a maximal 500 mA load for use with battery systems was developed and presented here. The linear regulator featured two modules of a preregulator and a linear regulator core circuit, offering minimized power dissipation and high-level stability. The preregulator delivered an internal power voltage of 3 V and supplied internal circuits including the second module (the linear regulator core). The preregulator fitted with an active, low-pass filter provided a low-noise reference voltage to the linear regulator core circuit. To ensure operational stability for the linear regulator, error amplifiers incorporating the Miller compensation technique and featuring a large slewing rate were employed in the two modules. The circuit was successfully implemented in a 0.25 µm, 5 V complementary metal-oxide semiconductor (CMOS) process featuring 20 V drain-extended MOS (DMOS)/bipolar high-voltage devices. The total silicon area, including all pads, was approximately 1.67 mm2. To reduce chip area, bipolar rather than DMOS transistors served as the power transistors. Measured results demonstrated that the designed linear regulator was able to operate at an input voltage ranging from 3.9 to 10 V and offer a maximum 500 mA load current with fixed 2.5 V output voltage.

scholarly journals Phase Change Metasurfaces by Continuous or Quasi-Continuous Atoms for Active Optoelectronic Integration

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1272
Author(s):  
Zhihua Fan ◽  
Qinling Deng ◽  
Xiaoyu Ma ◽  
Shaolin Zhou
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Complementary Metal Oxide Semiconductor ◽  
Photonic Devices ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Nanophotonic Devices ◽  
Optoelectronic Integration ◽  
Hybrid Devices ◽  
Micro Electromechanical System

In recent decades, metasurfaces have emerged as an exotic and appealing group of nanophotonic devices for versatile wave regulation with deep subwavelength thickness facilitating compact integration. However, the ability to dynamically control the wave–matter interaction with external stimulus is highly desirable especially in such scenarios as integrated photonics and optoelectronics, since their performance in amplitude and phase control settle down once manufactured. Currently, available routes to construct active photonic devices include micro-electromechanical system (MEMS), semiconductors, liquid crystal, and phase change materials (PCMs)-integrated hybrid devices, etc. For the sake of compact integration and good compatibility with the mainstream complementary metal oxide semiconductor (CMOS) process for nanofabrication and device integration, the PCMs-based scheme stands out as a viable and promising candidate. Therefore, this review focuses on recent progresses on phase change metasurfaces with dynamic wave control (amplitude and phase or wavefront), and especially outlines those with continuous or quasi-continuous atoms in favor of optoelectronic integration.

scholarly journals Universal Filter Based on Compact CMOS Structure of VDDDA

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1683
Author(s):  
Winai Jaikla ◽  
Fabian Khateb ◽  
Tomasz Kulej ◽  
Koson Pitaksuttayaprot
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Experimental Results ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Voltage Gain ◽  
Universal Filter ◽  
Mos Transistor

This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is compact and simple, owing to the employment of the multiple-input metal oxide semiconductor (MOS) transistor technique. The presented filter employs two VDDDAs, one resistor and two grounded capacitors, and it offers low-pass: LP, band-pass: BP, band-reject: BR, high-pass: HP and all-pass: AP responses with a unity passband voltage gain. The proposed universal voltage mode filter has high input impedances and low output impedance. The natural frequency and bandwidth are orthogonally controlled by using separated transconductance without affecting the passband voltage gain. For a BP filter, the root mean square (RMS) of the equivalent output noise is 46 µV, and the third intermodulation distortion (IMD3) is −49.5 dB for an input signal with a peak-to peak of 600 mV, which results in a dynamic range (DR) of 73.2 dB. The filter was designed and simulated in the Cadence environment using a 0.18-µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). In addition, the experimental results were obtained by using the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental one that confirmed the advantages of the filter.

Millimeter-wave dual-mode and dual-band switchable Gilbert up-conversion mixer in 65-nm CMOS process

2021 ◽  
pp. 1-5
Author(s):  
Fang Zhu ◽  
Guo Qing Luo
Keyword(s):  
Millimeter Wave ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dual Band ◽  
Cmos Process ◽  
Pumping Power ◽  
Dual Mode ◽  
Dc Power

Abstract In this paper, a millimeter-wave (MMW) dual-mode and dual-band switchable Gilbert up-conversion mixer in a commercial 65-nm complementary metal oxide semiconductor (CMOS) process is presented. By simply changing the bias, the proposed CMOS Gilbert up-conversion mixer can be switched between subharmonic and fundamental operation modes for MMW dual-band applications. With a low local oscillator pumping power of 3 dBm and low dc power consumption of 6 mW, the proposed CMOS Gilbert up-conversion mixer exhibits a measured conversion gain of −0.5 ± 1.5 dB from 37 to 50 GHz and 2.5 ± 1.5 dB from 17.5 to 32 GHz for the subharmonic and fundamental modes, respectively.

scholarly journals Performance Comparison of Carry-Lookahead and Carry-Select Adders Based on Accurate and Approximate Additions

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 369 ◽  
Author(s):  
Padmanabhan Balasubramanian ◽  
Nikos Mastorakis
Keyword(s):  
High Speed ◽  
Digital Signal ◽  
Complementary Metal Oxide Semiconductor ◽  
Performance Comparison ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Least Significant Bit ◽  
Design Metrics ◽  
Ripple Carry Adder ◽  
Speed Performance

Addition is a fundamental operation in microprocessing and digital signal processing hardware, which is physically realized using an adder. The carry-lookahead adder (CLA) and the carry-select adder (CSLA) are two popular high-speed, low-power adder architectures. The speed performance of a CLA architecture can be improved by adopting a hybrid CLA architecture which employs a small-size ripple-carry adder (RCA) to replace a sub-CLA in the least significant bit positions. On the other hand, the power dissipation of a CSLA employing full adders and 2:1 multiplexers can be reduced by utilizing binary-to-excess-1 code (BEC) converters. In the literature, the designs of many CLAs and CSLAs were described separately. It would be useful to have a direct comparison of their performances based on the design metrics. Hence, we implemented homogeneous and hybrid CLAs, and CSLAs with and without the BEC converters by considering 32-bit accurate and approximate additions to facilitate a comparison. For the gate-level implementations, we considered a 32/28 nm complementary metal-oxide-semiconductor (CMOS) process targeting a typical-case process–voltage–temperature (PVT) specification. The results show that the hybrid CLA/RCA architecture is preferable among the CLA and CSLA architectures from the speed and power perspectives to perform accurate and approximate additions.

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