Cytotoxicity and pro-inflammatory effect of GaSb thin films in L929 cells

2021 ◽  
Author(s):  
Junko Fujihara ◽  
Naoki Nishimoto
Keyword(s):  
Thin Films ◽  
Cell Culture ◽  
Gallium Antimonide ◽  
Inflammatory Responses ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Infrared Region ◽  
Ros Generation ◽  
L929 Cells ◽  
Living Organisms

Gallium antimonide (GaSb)-based devices operate efficiently in the infrared region. Investigating the toxicity of GaSb thin film is necessary for using embedded GaSb-based devices in living organisms. In this study, viability, oxidative stress, inflammatory responses, apoptosis induction and genotoxicity of GaSb were assayed using L929 cells following a 24 h exposure to GaSb. GaSb thin films were deposited on a quartz substrate using radio frequency (RF) magnetron sputtering. These films were soaked in cell culture medium to prepare test solutions. The viability of cells treated with the GaSb extract was lower than that of control cells. GaSb elicited little reactive oxygen species (ROS) generation. Tumor necrosis factor (TNF)-[Formula: see text] and interleukin (IL)-1[Formula: see text] levels were elevated in GaSb-treated cell culture supernatants. Apoptosis and genotoxicity were not evident following GaSb treatment. Overall, these results demonstrate the low toxicity of GaSb compared with previous studies examining arsenic-containing III–V materials, which is desirable for biological devices.

Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1792 ◽  
Author(s):  
Jiantuo Gan ◽  
Augustinas Galeckas ◽  
Vishnukanthan Venkatachalapathy ◽  
Heine N. Riise ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Room Temperature ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Considerable Improvement ◽  
Photoluminescence Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Room Temperature Photoluminescence

ABSTRACTCuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.

scholarly journals Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1435
Author(s):  
Kaneez Fatima ◽  
Hadia Noor ◽  
Adnan Ali ◽  
Eduard Monakhov ◽  
Muhammad Asghar
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Silicon Germanium ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
The Past ◽  
High Power Factor ◽  
Different Temperatures ◽  
P Type ◽  
Quartz Substrates

Over the past few years, thermoelectrics have gained interest with regard to thermoelectricity interconversion. The improvement in the efficiency of the thermoelectric material at an ambient temperature is the main problem of research. In this work, silicon–germanium (SiGe) thin films, owing to superior properties such as nontoxicity, high stability, and their integrability with silicon technologies, were studied for thermoelectric applications. P-type SiGe thin films were deposited on quartz substrates by DC/RF magnetron sputtering and annealed at three different temperatures for 1 hour. Significant enhancement in the Seebeck coefficient was achieved for the sample annealed at 670 °C. A high power factor of 4.1 μWcm−1K−2 was obtained at room temperature.

scholarly journals A Brief Study of Physical Properties of Rf Magnetron Sputtered Azo Thin Films

2021 ◽  
Vol 16 (2) ◽  
Author(s):  
Richa Sharma ◽  
Fouran Singh ◽  
J M S Rana
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Morphological Changes ◽  
Quartz Substrate ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Wurtzite Structure ◽  
Responsible Mechanism ◽  
Vis Spectroscopy ◽  
Set Up

We reported the physical properties of undoped and Aluminium doped ZnO (AZO) thin films that were synthesized by the RF magnetron sputtering method on a quartz substrate. The effect of dopant concentration on structure, morphology, optical and electrical properties of the thin films have been studied systematically by XRD, Raman spectroscopy, AFM, FE-SEM, UV-VIS spectroscopy and I-V measurement (two probe method) respectively. The crystallite growth of the thin films is along c-axis (002) orientations with hexagonal wurtzite structure. The crystallinity is enhanced in the 1%AZO thin films as compared to undoped ZnO. The transition of stress value after introducing the dopant is discussed. These changes are further correlated with the observed morphological changes. The alteration in optical transmission and optical band gap is also discussed extensively. For the AZO (1% and 2%) thin films the n-type conductivity and ohmic nature measured by using Keithley two probe set up. The responsible mechanism for improved conductivity is discussed. In the FTIR spectrum the peaks originated by the tetrahedral coordination of ZnO are observed which further confirms the wurtzite structure of the deposited thin film sample that are recorded by the XRD pattern.

Vanadium Dioxide Thin Films Deposited on TiO2 Buffer Layer for Smart Thermochromic Glazing of Windows

2011 ◽  
Vol 374-377 ◽  
pp. 1365-1368 ◽  
Author(s):  
Jian Wei Ma ◽  
Gang Xu ◽  
Lei Miao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Buffer Layer ◽  
Quartz Glass ◽  
Vanadium Dioxide ◽  
Near Infrared ◽  
Rf Magnetron Sputtering ◽  
Infrared Region ◽  
Glass Substrates ◽  
Different Color

Vanadium dioxide (VO2) films were prepared on quartz glass and TiO2-coated quartz glass substrates by reactive RF-magnetron sputtering. The VO2 thin film with film thickness of 50 nm deposited on quartz glass substrates showed two kinds of regions with different color visible to the naked eye, i.e., the earth yellow region and the cyan region. Both XRD and Raman spectroscopy showed that the different color regions of the films had the different crystallinity quality and phase composition. Whereas, the VO2 thin films with film thickness of 50 nm fabricated on TiO2-coated quartz glass (with TiO2 film thickness of 50 nm) had uniform color and exhibited a larger change in transmittance at near infrared region than the VO2 thin films deposited on quartz glass did. A TiO2 buffer layer improved the crystallinity and uniformity of the VO2 film. Such very thin VO2 films with a TiO2 buffer layer have high potential for practical application in smart thermal glazing of windows.

Effect of lack of oxygen on optical and electrical properties of RF magnetron sputtering deposited CuFeO2−x thin films

2018 ◽  
Vol 32 (31) ◽  
pp. 1850379
Author(s):  
Yiqi Li ◽  
Lian Chen ◽  
Quanrong Deng ◽  
Yonglong Shen ◽  
Geming Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Oxygen Flow ◽  
Flow Ratio ◽  
Sem Images ◽  
Sputtering Deposition ◽  
Radio Frequency Sputtering ◽  
P Type

Delafossite CuFeO[Formula: see text] thin films were fabricated on quartz substrate using radio-frequency sputtering deposition under low O2 flow ratios from 9% to 0% at room temperature. The as-deposited films were in amorphous phase and crystallized into rhombohedral 3R (R3m) delafossite structure after post annealing at 900[Formula: see text]C for 2 h in flowing N2 atmosphere. SEM images showed that the films were composed of nano-sized crystallized grains, thin film composed of smoother surface and higher oxygen content was obtained under higher oxygen percentage in sputtering gas. The optical transmission spectra of these films were studied in the wavelength range 200–1500 nm and the results revealed a narrowing trend of direct bandgap from 3.09 eV to 2.98 eV with the decrease of oxygen flow ratio during deposition. All of the post-annealed CuFeO[Formula: see text] thin films exhibited p-type conductivity and linear ohmic contact feature with Cu electrodes. The carrier concentration of thin films increased from [Formula: see text] to [Formula: see text] whereas the carrier mobility decreased from [Formula: see text] to [Formula: see text] as the oxygen flow ratio reduced from 9% to 0%. The ability of controlling compound composition enables tuning of carrier concentration and mobility in CuFeO[Formula: see text] and offering essential technical basis in engineering photoelectronic devices.

scholarly journals Effect of Annealing Temperature of Cugao2 thin Films by Using RF Magnetron Sputtering Technique on Optical and Structural Properties

2018 ◽  
Vol 7 (4.30) ◽  
pp. 213
Author(s):  
Lam Wai Yip ◽  
Afishah Alias ◽  
Asmahani Binti Awang ◽  
Abu Bakar Bin Abd Rahman ◽  
Khairul Anuar Bin Mohamad ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Optical Transparency ◽  
Oxide Material ◽  
Optimum Result ◽  
Type Semiconductor ◽  
P Type

Cu-based conductive oxide such as CuGaO2 is seen to be a promising transparent p-type oxide material. The study of p-type semiconductor CuGaO2 thin films have been carried out to investigate the effects of different parameters in providing the optimum result in achieving good optical transparency and conductivity of the thin film. The CuGaO2 thin films were fabricated on quartz substrate via the Radio Frequency (RF) magnetron sputtering technique with varying substrate temperatures and different annealing temperatures. The p-type thin films were deposited at a temperature ranging from room temperature, 100°C, 200°C and 300°C. The samples were also annealed varying from temperature of 500°C, 600°C, 700°C and 800°C. The fabricated sample were characterized using X-ray diffraction (XRD), UV-Visible spectroscopy, and atomic force microscope (afm). XRD showed a peak at 2θ = 36.10° (012). The optical transparency values achieved from UV-Vis spectrometer were seen to be approximately 80% and the bandgaps were found to be in the range of 3.34-3.43 eV which is in line with the bandgap value from the research on CuGaO2 thin films.  From the afm, the mean surface roughness increases with increasing temperature and this is due to the increment of grain size. The highest grain size was observed at substrate temperature of 200°C.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band
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