HIGH SENSITIVE HYDROGEN SENSOR BY Pd/OXIDE/InGaP MOS STRUCTURE
Experimental formation of LPO (liquid phase oxidation)-grown InGaP native oxide near room temperature (~60° C ) is demonstrated. A high oxidation rate is obtained and checked by SEM and AES. The native oxide is determined to be composed of InPO 4 and Ga 2 O 3, analyzed by the results of XPS measurement. Due to the presence of the excellent quality of InGaP native oxide, high hydrogen ( H 2) sensitivity in output current of a Pd /oxide/ InGaP MOS Schottky diode is observed. Under the applied voltage of -1 V and 50 ppm H 2/air, a high sensitivity of 1090 is obtained. An obvious variation of output current and a short response time due to the exposure to different H 2 concentration are also achieved. For example, the adsorption (τa) and desorption (τb) time constants under 50 ppm H 2/air are 2.3 s and 2.7 s, respectively.