STRUCTURAL AND OPTICAL CHARACTERIZATION OF BORON–NITROGEN-DOPED AMORPHOUS CARBON FILMS DEPOSITED BY r.f. PECVD

2007 ◽  
Vol 21 (08) ◽  
pp. 455-466 ◽  
Author(s):  
J. PODDER ◽  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Film Deposition ◽  
Wave Number ◽  
Nitrogen Doped ◽  
Deposited Films ◽  
Boron Nitrogen

Boron–nitrogen-doped amorphous carbon (a-C:H:B:N) films have been deposited onto glass and n-type Si(100) substrates by radio frequency (r.f.) plasma-enhanced chemical vapor deposition at a frequency of 13.56 MHz at room temperature using CH 4 as precursor of carbon source and H2 as a carrier gas. The film deposition was performed in the presence of crystalline boron source at different flow rates of 0, 6, 8, 10, 12 sccm of nitrogen under constant r.f. power and fixed partial pressure of mixed CH 4, N 2, and H 2 gases. Effects of boron and nitrogen doping on the bonding states, growth kinetics and optical properties of the as-deposited films have been examined by Fourier transform infrared (FTIR) spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and ultraviolet-visible spectroscopy. The experimental results show that the incorporation of boron and nitrogen has a considerable effect on the properties of the deposited films. FTIR spectra show that the nitrogen is bonded to carbon and hydrogen as C=N , N–H and C–H bonding configurations in the as-deposited film. The incorporation of boron and nitrogen shifts the G-peak towards the higher wave number and an increase in the I D /I G ratio demonstrating the graphitic character of the a-C:H:B:N films. Optical band gap is found to be reduced from 1.62 to 1.35 eV with the increase in nitrogen concentration in the presence of boron.

OPTICAL AND STRUCTURAL PROPERTIES OF NITROGENATED DIAMOND-LIKE CARBON FILMS PREPARED BY r.f. PECVD

2006 ◽  
Vol 13 (01) ◽  
pp. 1-6 ◽  
Author(s):  
M. RUSOP ◽  
S. ABDULLAH ◽  
J. PODDER ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Photoelectron Spectroscopy ◽  
Uv Spectroscopy ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Considerable Effect ◽  
Wave Number ◽  
Diamond Like Carbon ◽  
P Type ◽  
Deposited Films

Nitrogenated diamond-like carbon films have been deposited on glass and p-type Si (100) substrates by radio frequency (r.f.) plasma-enhanced chemical vapor deposition (PECVD) with a frequency of 13.56 MHz at room temperature using CH 4 as precursor of carbon source and H 2 as a carrier gas. The deposition was performed at a different flow rate of nitrogen from 0 to 12 sccm under a constant r.f. power. The effect of nitrogen incorporation on the bonding states and growth kinetics of the deposited films have been investigated by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, X-ray photoelectron spectroscopy and optical properties by UV spectroscopy measurement. Our experimental results show that the incorporation of nitrogen has a considerable effect on the properties of the deposited films. FTIR spectra show that the nitrogen is bonded to carbon and hydrogen as C=N , C≡N , N–H and C–H bonding configurations in the as-deposited film. The incorporation of nitrogen is found to shift the Raman G peak toward the higher wave number and to increase the Raman I D /I G ratio demonstrating the graphitic character of the hydrogenated amorphous carbon–nitrogen films. Band gap is found to reduce with the increase in nitrogen concentration.

The Biocompatibility of Ti Alloy Improved by Nitrogen-Doped Diamond-Like Carbon Films

2014 ◽  
Vol 711 ◽  
pp. 250-254 ◽  
Author(s):  
Wufanbieke Baheti ◽  
Ming Xin Li ◽  
Fu Guo Wang ◽  
Jin Ge Song ◽  
Long Hua Xu ◽  
...  
Keyword(s):  
Contact Angle ◽  
Photoelectron Spectroscopy ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Measuring Device ◽  
Nitrogen Doped ◽  
Angle Measuring ◽  
N Doping

The nitrogen-doped diamond-like carbon film was prepared on Ti6Al4V alloy by using plasma enhanced chemical vapor deposition (PECVD) technique,and its biocompatibility was studied.The surface morphology,chemical composition and contact angle were measured by scanning electron microscope (SEM),X-ray photoelectron spectroscopy(XPS),Raman Spectrometer and contact angle measuring device. Finally, the proliferation rate and cellular morphology of 3T3-E1 osteoblast cells on different sample surfaces were tested and Image J software was used to statistically analyze the count of the adhered cells. The results showed that cell adhesion and proliferation were significantly (P<0.05) increased on nitrogen-doped diamond-like carbon films , which illustrated that N doping improved the biocompatibility of DLC films. This finding has potential clinical application value to modify titanium alloy for new bone formation.

A NOVEL OF SURFACE WAVE MICROWAVE PLASMA CVD METHOD ON THE PREPARATION OF NITROGENATED AMORPHOUS CARBON FILMS

2005 ◽  
Vol 19 (05) ◽  
pp. 857-867
Author(s):  
M. RUSOP ◽  
S. ADHIKARY ◽  
A. M. M. OMER ◽  
S. ADHIKARI ◽  
H. UCHIDA ◽  
...  
Keyword(s):  
Surface Wave ◽  
Electrical Properties ◽  
Surface Morphology ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Carbon Films ◽  
X Rays ◽  
Plasma Chemical Vapor Deposition

We have studied the influence of the methane gas ( CH 4) pressure on the surface morphology, composition, structural and electrical properties of nitrogenated amorphous carbon ( a-C:N ) films grown by surface wave microwave plasma chemical vapor deposition (SWMP-CVD) using Scanning electron microscopy (SEM), Atomic force microscopy (AFM), Auger electron spectroscopy (AES), X-rays photoelectron spectroscopy (XPS), UV-visible spectroscopy and 4-point probe resistance measurement. We have succeeded in growing a-C:N films using a novel method of SWMP-CVD at room temperature and found that the surface morphology, bonding, optical and electrical properties of a-C:N films are strongly dependent on the CH 4 gas sources and the a-C:N films grown at higher CH 4 gas pressure have relatively high electrical conductivity.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films

1999 ◽  
Vol 567 ◽  
Author(s):  
Renee Nieh ◽  
Wen-Jie Qi ◽  
Yongjoo Jeon ◽  
Byoung Hun Lee ◽  
Aaron Lucas ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Future Generation ◽  
Oxide Thickness ◽  
Layer Growth ◽  
X Ray ◽  
Bst Films

ABSTRACTBa0.5Sr0.5TiO3 (BST) is one of the high-k candidates for replacing SiO2 as the gate dielectric in future generation devices. The biggest obstacle to scaling the equivalent oxide thickness (EOT) of BST is an interfacial layer, SixOy, which forms between BST and Si. Nitrogen (N2) implantation into the Si substrate has been proposed to reduce the growth of this interfacial layer. In this study, capacitors (Pt/BST/Si) were fabricated by depositing thin BST films (50Å) onto N2 implanted Si in order to evaluate the effects of implant dose and annealing conditions on EOT. It was found that N2 implantation reduced the EOT of RF magnetron sputtered and Metal Oxide Chemical Vapor Deposition (MOCVD) BST films by ∼20% and ∼33%, respectively. For sputtered BST, an implant dose of 1×1014cm−;2 provided sufficient nitrogen concentration without residual implant damage after annealing. X-ray photoelectron spectroscopy data confirmed that the reduction in EOT is due to a reduction in the interfacial layer growth. X-ray diffraction spectra revealed typical polycrystalline structure with (111) and (200) preferential orientations for both films. Leakage for these 50Å BST films is on the order of 10−8 to 10−5 A/cm2—lower than oxynitrides with comparable EOTs.

THE OPTICAL PROPERTIES OF NITROGENATED AMORPHOUS CARBON FILMS GROWN BY A NOVEL SURFACE WAVE MICROWAVE PLASMA CVD METHOD

2004 ◽  
Vol 18 (18) ◽  
pp. 987-1001 ◽  
Author(s):  
M. RUSOP ◽  
S. ADHIKARI ◽  
A. M. M. OMER ◽  
S. ADHIKARY ◽  
H. UCHIDA ◽  
...  
Keyword(s):  
Optical Properties ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Annealing Temperature ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Cvd Method ◽  
Wide Range ◽  
Bonding Properties

The effects of annealing temperature on the optical properties of nitrogenated amorphous carbon (a-C:N) films grown on quartz substrates by a novel surface wave microwave plasma chemical vapor deposition (SWMP-CVD) method are reported. The thickness, optical, structural and bonding properties of the as-grown and anneal-treated a-C:N films were measured and compared. The film thickness decreased rapidly with increasing annealing temperature above 350°C. A wide range of optical absorption characteristics is observed, depending on the annealing temperature. The optical band gap of as-grown a-C:N films is approximately 2.8 eV, gradually decreasing to 2.5 eV for the films anneal-treated at 300°C, and beyond that decreasing rapidly down to 0.9 eV at 500°C. The Raman and FTIR spectroscopy measurements have shown that the structural and composition of the films can be tuned by optimizing the annealing temperature. The change of optical, structural and bonding properties of SWMP-CVD-grown a-C:N films with higher annealing temperature was attributed to the fundamental changes in the bonding and band structures of the films.

scholarly journals One-step chemical vapor deposition synthesis and supercapacitor performance of nitrogen-doped porous carbon–carbon nanotube hybrids

2017 ◽  
Vol 8 ◽  
pp. 2669-2679 ◽  
Author(s):  
Egor V Lobiak ◽  
Lyubov G Bulusheva ◽  
Ekaterina O Fedorovskaya ◽  
Yury V Shubin ◽  
Pavel E Plyusnin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Hybrid Materials ◽  
Vapor Deposition ◽  
Porous Carbon ◽  
Photoelectron Spectroscopy ◽  
Electrochemical Impedance ◽  
Chemical Vapor ◽  
Carbon Surface ◽  
Simultaneous Formation ◽  
Nitrogen Doped

Novel nitrogen-doped carbon hybrid materials consisting of multiwalled nanotubes and porous graphitic layers have been produced by chemical vapor deposition over magnesium-oxide-supported metal catalysts. CN x nanotubes were grown on Co/Mo, Ni/Mo, or Fe/Mo alloy nanoparticles, and MgO grains served as a template for the porous carbon. The simultaneous formation of morphologically different carbon structures was due to the slow activation of catalysts for the nanotube growth in a carbon-containing gas environment. An analysis of the obtained products by means of transmission electron microscopy, thermogravimetry and X-ray photoelectron spectroscopy methods revealed that the catalyst's composition influences the nanotube/porous carbon ratio and concentration of incorporated nitrogen. The hybrid materials were tested as electrodes in a 1M H2SO4 electrolyte and the best performance was found for a nitrogen-enriched material produced using the Fe/Mo catalyst. From the electrochemical impedance spectroscopy data, it was concluded that the nitrogen doping reduces the resistance at the carbon surface/electrolyte interface and the nanotubes permeating the porous carbon provide fast charge transport in the cell.

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

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