SINGLE CRYSTALLINE a-AXIS ZnO THIN FILMS DEPOSITED BY SOL-GEL METHOD FOR OPTOELECTRONIC DEVICES

2008 ◽  
Vol 22 (09) ◽  
pp. 685-692 ◽  
Author(s):  
M. P. BHOLE ◽  
D. S. PATIL
Keyword(s):  
Sol Gel ◽  
Optoelectronic Devices ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Hexagonal Structure ◽  
Zno Films ◽  
Zno Film ◽  
Single Crystalline ◽  
Coating Method ◽  
Absorbance Spectra

Undoped a-axis oriented single crystalline zinc oxide ( ZnO ) films were deposited by sol-gel dip-coating method. The films were characterized by X-ray diffraction (XRD) and ultraviolet visible (UV-VIS) absorbance spectra. The films of ZnO were deposited on amorphous microscopic glass substrate at various temperatures. The XRD showed that the ZnO film was crystallized with a hexagonal structure with a strong orientation in the (100) plane, which is exactly along the a-axis and beneficial for the development of optoelectronic devices. The optical band gap energy found for this a-axis oriented ZnO film was 3.30 eV through UV-VIS absorbance spectra. The Fourier Transform Infrared Spectroscopy (FTIR) analysis was carried out by taking the IR absorbance spectra for ZnO film deposited on the silicon substrate at 450°C. It showed that the strong Zn – O stretching bond is present in the deposited film.

Effect of ZnO on a Superhydrophilic Self-Cleaning Properties of TiO2/SiO2 Thin Film on Glass Slide Substrate

2015 ◽  
Vol 1131 ◽  
pp. 237-241 ◽  
Author(s):  
Akkarat Wongkaew ◽  
Chanida Soontornkallapaki ◽  
Naritsara Amhae ◽  
Wichet Lamai
Keyword(s):  
Thin Film ◽  
Contact Angle ◽  
Visible Light ◽  
Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Coating Method ◽  
Dip Coating Method

This work aims to study the effect of ZnO containing in TiO2/SiO2 film on the superhydrophilic property after exposed to different types of light. The metal solutions were prepared by sol-gel technique and the film was deposited on glass slides by dip coating method. The parameter studied was the amount of ZnO in the TiO2/SiO2 film. The contents of ZnO were 5-20% weight (increased by 5%). The amount of TiO2 was constant at 30% weight. The obtained films were analyzed for their roughness. The results indicated that film roughness changed according to the ZnO contents. With 5%ZnO in the thin film, the roughness was 0.726 nm while 20%ZnO obtained the roughness of 2.128 nm. UV-Vis spectrophotometer was used for measuring of transmittance of films. At wavelength of 550 nm, the transmittances of each film were greater than 90%. Band gap energy of each film was calculated from the transmittance data. It was found that the average band gap energy of the films was 2.47 eV. Then, the films contained various amount of ZnO were grouped into 2 sets. The first set was exposed to visible light while the other set was exposed to UV. The duration of exposure was 5 hr. Both sets of films after exposed to any light were kept in a black box controlled relative humidity of 85%. Each film was measured contact angle every day. It was found that the 30%TiO2/5%Zn/SiO2 film exposed to visible light showed the best superhydrophilic property. The contact angle was about 0-5° within 3 days. This may due to the reduction of band gap energy in the presence of ZnO in TiO2/SiO2 films to 2.41 eV and the roughness of the film.

The Structural and Surface Morphology of Annealed ZnO Films

2014 ◽  
Vol 903 ◽  
pp. 73-77
Author(s):  
Peh Ly Tat ◽  
Karim bin Deraman ◽  
Rosli Hussin ◽  
Wan Nurulhuda Wan Shamsuri ◽  
Zuhairi Ibrahim
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Films ◽  
Axis Orientation ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Coating Method ◽  
Afm Micrographs ◽  
Dip Coating Method

ZnO thin films were deposited on the glass substrates via the sol-gel dip coating method. The films were annealed at various temperatures ranging from 350 °C to 550 °C. X-ray diffraction (XRD), and atomic force microscopy (AFM) were used to investigate the effect of annealing temperature on the structural and morphology properties of the films. The as grown films exhibited amorphous pattern while annealed films were polycrystalline structure with (002) preferential growth along c-axis orientation. The AFM micrographs revealed that the RMS roughness of the films increased as the annealing temperature increased. The grain size was ranging from 32.1 nm to 176.0 nm as the annealing temperature increased from 350 °C to 450 °C and decreased to 56.1 nm for 550 °C.

Obtainable P-Type ZnO Film Doped with Li by Sol-Gel Method

2015 ◽  
Vol 734 ◽  
pp. 796-801 ◽  
Author(s):  
Ting Ting Wang ◽  
Miao Miao Dai ◽  
Ya Jun Yan ◽  
Hong Zhang ◽  
Yi Min Yu
Keyword(s):  
Hole Concentration ◽  
Sol Gel ◽  
Green Emission ◽  
Hall Effect Measurement ◽  
Zno Films ◽  
Zno Film ◽  
Oriented Growth ◽  
Coating Method ◽  
Thermal Annealing Process ◽  
P Type

A series of Li-doped zinc oxide ( ZnO ) thin films were deposited on quartz glass by sol-gel and spin coating method. Their p-type conductivities could be achieved by subsequently thermal annealing process, which were characterized by Hall effect measurement. An optimized result with resistivity of 46.8 Ω cm, Hall mobility of 1.35 cm2/V s, and hole concentration of 9.89×1016 cm-3 was achieved at the annealing temperature of 700 °C. The films exhibited highly (002) oriented growth in all the cases. Strong green emission centered at 510 nm was observed by photoluminescence spectra in Li-doped ZnO films at room temperature.

Investigation on the Structural and Optical Properties of Nanocrystalline TiO2 Thin Films

2013 ◽  
Vol 678 ◽  
pp. 103-107 ◽  
Author(s):  
Arumugam Ranjitha ◽  
Natarajan Muthukumarasamy ◽  
Santhanam Agilan ◽  
Mariyappan Thambidurai ◽  
Rangasamy Balasundraprabhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Nanocrystalline Tio2 ◽  
Structural Investigations ◽  
Force Microscopy ◽  
Coating Method ◽  
Dip Coating Method

Nanocrystalline TiO2 thin films were prepared by sol-gel dip coating method. The structural investigations were carried out using x-ray diffraction technique. Anatase TiO2 thin films with tetragonal phase were obtained and the grain size was observed to lie in the range of 21-25 nm. Analysis on the surface topography of prepared films have been carried out using atomic force microscopy (AFM). The band gap energy is calculated from the absorption spectra of TiO2 films and is found to lie in the range 3.3 to 3.7 eV.

Formation of ZnO Nanoparticulate Thin Film: Sol-Gel Synthesis and Characterisation

2013 ◽  
Vol 832 ◽  
pp. 362-367
Author(s):  
Mohd Firdaus Malek ◽  
Mohamad Hafiz Mamat ◽  
Musa Mohamed Zaihidi ◽  
Mohd Zainizan Sahdan ◽  
Zuraida Khusaimi ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Visible Region ◽  
Zinc Content ◽  
Dip Coating ◽  
Film Deposition ◽  
Zno Films ◽  
Coating Method ◽  
Dip Coating Method ◽  
Sol Gel Synthesis

ZnO thin films have been prepared sol gel dip coating method using zinc acetate dehydrate (Zn(CH3COO)2·2H2O, Merck) as cation source, 2-methoxyethanol (C3H8O2, Merck) as solvent and monoethanolamine, MEA (C2H7NO, R&M) as sol stabilizer. Film deposition was performed by dip-coating technique at a fixed deposition rate on Corning 7740 glass substrate. The effect of sol concentration on the properties of the thin films is discussed. The effect of the sol concentration on produced ZnO films was found to be significant. X-ray analysis showed that thin films were preferentially orientated along the c-axis direction of the crystal. Besides, the films had a transparency of greater than 80% in the visible region for sol–gels with a zinc content of up to 0.8 M and exhibited absorption edges at ~375 nm.

Porous Gel Coatings Obtained by Phase Separation in ORMOSIL System

2000 ◽  
Vol 628 ◽  
Author(s):  
Kazuki Nakanishi ◽  
Souichi Kumon ◽  
Kazuyuki Hirao ◽  
Hiroshi Jinnai
Keyword(s):  
Phase Separation ◽  
Reaction Time ◽  
Volume Fraction ◽  
Sol Gel ◽  
Reaction Times ◽  
Dip Coating ◽  
Coating Solution ◽  
Coating Method ◽  
Gel Phase ◽  
Dip Coating Method

ABSTRACTMacroporous silicate thick films were prepared by a sol-gel dip-coating method accompanied by the phase separation using methyl-trimethoxysilane (MTMS), nitric acid and dimethylformamide (DMF) as starting components. The morphology of the film varied to a large extent depending on the time elapsed after the hydrolysis until the dipping of the coating solution. On a glass substrate, the films prepared by early dipping had inhomogeneous submicrometer-sized pores on the surface of the film. At increased reaction times, relatively narrow sized isolated macropores were observed and their size gradually decreased with the increase of reaction time. On a polyester substrate, in contrast, micrometer-sized isolated spherical gel domains were homogeneously deposited by earlier dippings. With an increase of reaction time, the volume fraction of the gel phase increased, then the morphology of the coating transformed into co-continuous gel domains and macropores, and finally inverted into the continuous gel domains with isolated macropores. The overall morphological variation with the reaction time was explained in terms of the phase separation and the structure freezing by the forced gelation, both of which were induced by the evaporation of methanol during the dipping operation.

Synthesis of WO3 Electrochromic Sensor by Sol-Gel Method and Characterization of Its Electrochemical and Optical Properties

2006 ◽  
Vol 317-318 ◽  
pp. 807-810 ◽  
Author(s):  
Chang Yeoul Kim ◽  
Jin Wook Choi ◽  
Tae Yeoung Lim ◽  
Duck Kyun Choi
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Dip Coating ◽  
Xrd Pattern ◽  
Starting Solution ◽  
Oxide Crystal ◽  
Heat Treated ◽  
Coating Method ◽  
Dip Coating Method

Electrochromic WO3 thin film was prepared by using tungsten metal solution in hydrogen peroxide as a starting solution and by sol-gel dip coating method. XRD pattern showed that tungsten oxide crystal phase formed at 400. In the view of electrochemical property, WO3 thin film which was heat-treated at 300 and was amorphous had better than that of the crystalline phase.

Optical, magnetic and structural properties of Cr-doped ZnO thin films by sol–gel dip-coating method

2017 ◽  
Vol 4 (9) ◽  
pp. 096403 ◽  
Author(s):  
Zohra N Kayani ◽  
Marya Siddiq ◽  
Saira Riaz ◽  
Shahzad Naseem
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Thin Films ◽  
Coating Method ◽  
Doped Zno ◽  
Dip Coating Method

ELECTRICAL AND OPTICAL PROPERTIES OF MULTILAYER SOL GEL ZnO COATINGS

2006 ◽  
Vol 20 (23) ◽  
pp. 3357-3364 ◽  
Author(s):  
TALAAT MOUSSA HAMMAD
Keyword(s):  
Carrier Mobility ◽  
Sol Gel ◽  
Dip Coating ◽  
Free Carrier ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
Zinc Oxide Films ◽  
Free Carrier Density ◽  
Fine Microstructure

Multilayer transparent conducting zinc oxide films have been prepared on boro-silicate substrates by the commercially sol gel dip coating process. Each layer was fired at 550°C in a conventional furnace for 15 min. The final coatings were then tempered under a flux of forming gas ( N 2/ H 2) at 400°C for 2 h. The coatings were characterized by surface stylus profiling and optical spectroscopy (UV-NIR). Results show that (1) ZnO films with electrical resistivity of 6×10-4 Ω· cm , free carrier mobility of approximately 77 cm 2/ V · s and free carrier density of approximately 6.14×1019 cm -3 are obtained for multilayers 310 nm and (2) the transmittance is approximately 60.4% and the reflectance is nearly 34.7% are obtained at a wavelength of 800 nm when the thickness of the ZnO multilayers is 310 nm. The crystal structure and grain orientation of ZnO films were determined by X-ray diffraction. SEM investigations revealed that the surface morphology of growing ZnO films on boro-silicate substrate is dominated by the smooth surface with a fine microstructure.

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