EFFECT OF DEVIATION ON OPTICAL TRANSMISSION THROUGH THUE–MORSE MULTILAYERS

In this paper, we propose a deviation model and consider the transmission property of Thue–Morse (TM) multilayers with deviations. It is found that at the central wavelength for very simple systems, the transmission coefficients (TCs) have nothing to do with the deviation of a machine, but when a multilayer system becomes more complex, one should use the most precise machine in order to make the system possess the designed value of TC. However, if superlattices become more complicated, one may choose a machine with a suitable relative error, but not the most accurate machine, to manufacture a perfect system. Additionally, after the number of layers exceeds some critical value, the very sophisticated optical superlattices could only be manufactured by very precise machines. The results would be useful for designing and manufacturing thin films of optical superlattices.

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Transparent-Component-Decimation Method for Studying the Optical Transmission of One Kind of Aperiodic Superlattices

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.138-139.1215 ◽

2011 ◽

Vol 138-139 ◽

pp. 1215-1220

Author(s):

Xu Bo Hu ◽

Jun Feng Li

Keyword(s):

Optical Transmission ◽

Central Wavelength ◽

Transmission Coefficients ◽

Bright Future ◽

The Family ◽

Decimation Method

Transparent-component-decimation (TCD) method may simplify the aperiodic sequences to the simplest form and one can obtain the transmissive characteristics without complicated calculations. Applying this method to the Family A of Generalized Thue-Morse [FAGTM(n)] aperiodic superlattices, we obtain directly the formulas of the transmission coefficients at the central wavelength. The results are in accord with the previous published results. It shows that the TCD method can be used to study optical transmission normally through aperiodic multilayers directly and exactly and has bright future.

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Optical transmission through generalized third-order Fibonacci multilayers

Modern Physics Letters B ◽

10.1142/s0217984914501292 ◽

2014 ◽

Vol 28 (16) ◽

pp. 1450129

Author(s):

Xubo Hu ◽

Xiangbo Yang ◽

Songhao Liu

Keyword(s):

Numerical Simulation ◽

Electromagnetic Wave ◽

Optical Transmission ◽

Wave Theory ◽

Third Order ◽

Central Wavelength ◽

Transmission Coefficients ◽

Transmission Properties ◽

Optical Memories ◽

Simulation Results

In this paper, by means of three kinds of methods we study the transmission properties of the light through the quasiperiodic multilayers vertically following the generalized third-order Fibonacci (GTOF) sequences. By means of the decomposition–substitution (DS) method we predict that the GTOF systems possess an interesting four-cycle transmissive characteristic at the central wavelength. Based on the electromagnetic wave theory, we then deduce the formulae of propagation matrices and transmission coefficients analytically at the central wavelength and obtain the numerical simulation results at the same time. The results obtained by three kinds of methods accord with each other and three kinds of methods are complementary. The cyclic transmissive characteristics may be useful for the designing of some optical memories, optical logical gates, and other optical controlling devices.

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Determination of Thermal Conductivity of Amorphous Silicon Thin Films via Non-Contacting Optical Probing

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.326-328.689 ◽

2006 ◽

Vol 326-328 ◽

pp. 689-692

Author(s):

Seung Jae Moon

Keyword(s):

Thin Film ◽

Thin Films ◽

Thermal Conductivity ◽

Amorphous Silicon ◽

Optical Transmission ◽

Film Deposition ◽

Transmission Measurement ◽

Conductive Heat ◽

Optical Transmission Measurement

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.

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ITO Thin Films on Silicon Buffer by Sol Gel Method

Materials Science Forum ◽

10.4028/www.scientific.net/msf.514-516.1155 ◽

2006 ◽

Vol 514-516 ◽

pp. 1155-1160 ◽

Cited By ~ 1

Author(s):

Talaat Moussa Hammad

Keyword(s):

Thin Films ◽

Indium Tin Oxide ◽

Optical Transmission ◽

Sol Gel ◽

Precursor Solution ◽

Charge Carriers ◽

X Ray Diffraction ◽

X Ray ◽

Ito Thin Films ◽

Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

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Transition Metal-Doped ZnO: A Comparison of Optical, Magnetic, and Structural Behavior of Bulk and Thin Films

MRS Proceedings ◽

10.1557/proc-0957-k04-10 ◽

2006 ◽

Vol 957 ◽

Cited By ~ 1

Author(s):

William E. Fenwick ◽

Matthew H. Kane ◽

Zaili Fang ◽

Tahir Zaidi ◽

Nola Li ◽

...

Keyword(s):

Thin Films ◽

Transition Metal ◽

Optical Transmission ◽

Magnetic Hysteresis ◽

Structural Quality ◽

Bulk Crystals ◽

Transmission Measurements ◽

Doped Zno ◽

Metal Doped ◽

Metal Incorporation

ABSTRACTTransition metal-doped ZnO bulk crystals and thin films have been investigated to determine the effects of transition metal incorporation on optical, magnetic, and structural properties of ZnO. A modified melt growth technique was used to grow bulk Zn1-xMnxO, Zn1-xCoxO, and Zn1-xFexO. Optical transmission measurements show an apparent shift in absorption edge with increasing transition metal incorporation. Raman spectroscopy also shows increasing lattice disorder with increasing transition metal concentration. ZnO thin films doped with Ni, Co, and Gd were grown by metalorganic chemical vapor deposition (MOCVD). While the Co-doped thin films showed antiferromagnetic behavior, magnetic hysteresis was observed in the Ni-doped and Gd-doped thin films. Structural quality was verified with X-ray diffraction (XRD), and optical properties were investigated using room temperature photoluminescence (PL) and optical transmission measurements. Properties of ZnO:TM bulk crystals and thin films are compared and used to discuss possible origins of ferromagnetism in these materials.

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Extraction of free carrier density and mobility from the optical transmission data of tin-doped indium oxide thin films

Materials Letters ◽

10.1016/0167-577x(95)00008-9 ◽

1995 ◽

Vol 23 (1-3) ◽

pp. 73-78 ◽

Cited By ~ 10

Author(s):

I.A. Rauf

Keyword(s):

Thin Films ◽

Indium Oxide ◽

Carrier Density ◽

Optical Transmission ◽

Free Carrier ◽

Oxide Thin Films ◽

Free Carrier Density ◽

Transmission Data

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The magnetic anisotropy of thin films for recording tapes with different composition and number of layers

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2003.12.340 ◽

2004 ◽

Vol 272-276 ◽

pp. 2274-2275

Author(s):

G Bottoni ◽

D Candolfo ◽

A Cecchetti

Keyword(s):

Thin Films ◽

Magnetic Anisotropy ◽

Number Of Layers

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CRITICAL BEHAVIOUR OF FERROELECTRIC THIN FILMS

International Journal of Modern Physics B ◽

10.1142/s0217979202009299 ◽

2002 ◽

Vol 16 (03) ◽

pp. 473-480 ◽

Cited By ~ 8

Author(s):

JULIA M. WESSELINOWA ◽

STEFFEN TRIMPER

Keyword(s):

Thin Film ◽

Thin Films ◽

Scaling Laws ◽

Transverse Field ◽

Ferroelectric Thin Film ◽

Ferroelectric Thin Films ◽

Number Of Layers ◽

Ising Systems ◽

2D And 3D ◽

Good Agreement

Based on an Ising model in a transverse field (TIM) and using a Green's function formalism the critical exponents of the polarization β and of the longitudinal susceptibility γ are calculated for a ferroelectric thin film consisting of N layers. The exponents depends on the number of layers in a significant manner. Whereas for N=3 layers the exponents are β=0.131 and γ=1.739 there is a change over to β=0.315 and γ=1.239 in case of N=30. The datas are in a good agreement with predictions for 2D and 3D Ising systems. Using scaling laws other exponents like α, δ, η and ν are obtained, too.

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