scholarly journals Effect of deposition temperature on the properties of F and Ti co-doped zinc oxide films

2021 ◽  
pp. 2141003
Author(s):  
Wenli Zeng ◽  
Yen-Lin Chiu ◽  
Fang-Hsing Wang ◽  
Hsien-Wei Tseng ◽  
Cheng-Fu Yang
Keyword(s):  
Deposition Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Rf Sputtering ◽  
X Ray Diffraction ◽  
Transmittance Spectra ◽  
Zinc Oxide Films ◽  
Doped Zno ◽  
Surface Morphologies ◽  
Secondary Ion ◽  
Co Doped

ZnO + 1.5 wt.% TiO2 powder is calcined at [Formula: see text] and sintered at [Formula: see text] to prepare the Ti-doped ZnO ceramic target, and RF sputtering is used to deposit F and Ti co-doped ZnO (FTZO) films by introducing Ar + CF4 mixing gas (CF4 flow rate is 0.2%) into the deposition chamber. The deposition temperature is changed from room temperature to [Formula: see text], and the thicknesses of all deposited FTZO films are controlled at about 320 nm. After FTZO films are deposited, X-ray diffraction pattern is used to analyze their crystalline properties, field-effect scanning electron microscope is used to observe their surface morphologies and confirm their thicknesses. n&k analyzer is used to measure the transmittance spectra in the wavelength range of 300–1100 nm and we find that the absorption edge of FTZO films is shifted to lower wavelength as the deposition temperature increases. The optical energy band gap of FTZO films is calculated using the transmittance spectra and the electrical properties of FTZO films are measured using a Hall equipment. Finally, secondary-ion mass spectrometry is used to analyze the C, O, F, Si and Ti elements with different deposition temperatures for confirming the existence and distribution of [Formula: see text] ions and non-existence of C element.

scholarly journals Investigation of Flexible Arrayed Lactate Biosensor Based on Copper Doped Zinc Oxide Films Modified by Iron–Platinum Nanoparticles

Polymers ◽  
2021 ◽  
Vol 13 (13) ◽  
pp. 2062
Author(s):  
Yu-Hsun Nien ◽  
Zhi-Xuan Kang ◽  
Tzu-Yu Su ◽  
Chih-Sung Ho ◽  
Jung-Chuan Chou ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Response Time ◽  
Platinum Nanoparticles ◽  
Electrochemical Impedance ◽  
Rf Sputtering ◽  
X Ray Diffraction ◽  
Average Sensitivity ◽  
Iron Platinum ◽  
Zinc Oxide Films ◽  
Paste Electrode

Potentiometric biosensors based on flexible arrayed silver paste electrode and copper-doped zinc oxide sensing film modified by iron-platinum nanoparticles (FePt NPs) are designed and manufactured to detect lactate in human. The sensing film is made of copper-doped zinc oxide (CZO) by a radio frequency (RF) sputtering system, and then modified by iron-platinum nanoparticles (FePt NPs). The surface morphology of copper-doped zinc oxide (CZO) is analyzed by scanning electron microscope (SEM). FePt NPs are analyzed by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The average sensitivity, response time, and interference effect of the lactate biosensors are analyzed by voltage-time (V-T) measurement system. The electrochemical impedance is analyzed by electrochemical impedance spectroscopy (EIS). The average sensitivity and linearity over the concentration range 0.2 mM–5 mM are 25.32 mV/mM and 0.977 mV/mM, respectively. The response time of the lactate biosensor is 16 s, with excellent selectivity.

Effects of As Doping on Properties of ZnO Films

2001 ◽  
Vol 692 ◽  
Author(s):  
K. S. Huh ◽  
D. K. Hwang ◽  
K. H. Bang ◽  
M. K. Hong ◽  
D. H. Lee ◽  
...  
Keyword(s):  
Optical Properties ◽  
Secondary Ion Mass Spectrometry ◽  
Annealing Treatment ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
As Doping ◽  
Dopant Atoms ◽  
Increasing Temperature ◽  
Secondary Ion

AbstractA series of ZnO thin films with various deposition temperatures were prepared on (100) GaAs substrates by radio-frequency magnetron sputtering using ZnO target. The ZnO films were studied by field emission scanning electron microscope(FESEM), x-ray diffraction(XRD), photoluminescence(PL), cathodoluminescence(CL), and Hall measurements. The structural, optical, and electrical properties of the films were discussed as a function of the deposition temperature. With increasing temperature, the compressive stress in the films was released and their crystalline and optical properties were improved. From the depth profile of As measured by secondary ion mass spectrometry(SIMS), As doping was confirmed, and, in order to activate As dopant atoms, post-annealing treatment was performed. After annealing treatment, electrical and optical properties of the films were changed.

The Oxide Scale Growth Mechanism on Fe20Cr5Al+RE Alloy in SO2+O2

2009 ◽  
Vol 289-292 ◽  
pp. 541-550 ◽  
Author(s):  
Jerzy Jedlinski ◽  
Zbigniew Żurek ◽  
Martah Homa ◽  
G. Smoła ◽  
J. Camra
Keyword(s):  
Phase Composition ◽  
Secondary Ion Mass Spectrometry ◽  
Grazing Angle ◽  
Oxidation Mechanism ◽  
Complex Oxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thin Foils ◽  
Manufacturing Procedure ◽  
Secondary Ion

The oxidation mechanism of FeCrAl (+RE), RE: reactive elements: Y and Hf) thin foils was studied at temperatures ranging from 1093 K to 1173 K in SO2+1%O2 atmosphere. Materials were subjected to isothermal and thermal cycling exposures as well as to the so-called two-stage-oxidation. In the latter, an oxygen isotope 18O2 was used as a tracer. Starting materials and scales were characterized using Grazing Angle X-Ray Diffraction (GA-XRD), EDX, SEM, XPS and High Spatial Resolution Secondary Ion Mass Spectrometry (HSR-SIMS). The obtained results showed within the studied range of exposure conditions the scales on all the studied alloys grow via outward mechanism typical for transient oxides and not for the -Al2O3 which is consistent with phase composition results and scale morphology and/or microstructure. It was also found that ‘as received’ foils are not bare metals but complex oxide-on-metal systems resulting from their manufacturing procedure. The obtained results are discussed in terms of the diffusion-related transport properties of the scale and of the scale phase composition.

scholarly journals Disordering of InGaN/GaN Superlattices After High-Pressure Annealing

1998 ◽  
Vol 537 ◽  
Author(s):  
M.D. McCluskey ◽  
L.T. Romano ◽  
B.S. Krusor ◽  
D. Hofstetter ◽  
D.P. Bour ◽  
...  
Keyword(s):  
Quantum Well ◽  
Secondary Ion Mass Spectrometry ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures ◽  
Composition Profiles ◽  
Secondary Ion

AbstractInterdiffusion of In and Ga is observed in InGaN multiple-quantum-well superlattices for annealing temperatures of 1250 to 1400°C. Hydrostatic pressures of up to 15 kbar were applied during the annealing treatments to prevent decomposition of the InGaN and GaN. In as-grown material, x-ray diffraction spectra show InGaN superlattice peaks up to the fourth order. After annealing at 1400°C for 15 min, only the zero-order InGaN peak is observed, a result of compositional disordering of the superlattice. Composition profiles from secondary ion mass spectrometry indicate significant diffusion of Mg from the p-type GaN layer into the quantum well region. This Mg diffusion may lead to an enhancement of superlattice disordering. For annealing temperatures between 1250 and 1300°C, a blue shift of the InGaN spontaneous emission peak is observed, consistent with interdiffusion of In and Ga in the quantum-well region.

scholarly journals Sazhinite-(La), Na3LaSi6O15(H2O)2, a new mineral from the Aris phonolite, Namibia: Description and crystal structure

2006 ◽  
Vol 70 (4) ◽  
pp. 405-418 ◽  
Author(s):  
F. Cámara ◽  
L. Ottolini ◽  
B. Devouard ◽  
L. A. J. Garvie ◽  
F. C. Hawthorne
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Polarized Light ◽  
Total Content ◽  
New Mineral ◽  
Formula Unit ◽  
X Ray Diffraction ◽  
Average Composition ◽  
Mohs Hardness ◽  
Silicate Layers ◽  
Secondary Ion

AbstractSazhinite-(La) is a new mineral from the Aris phonolite, Windhoek, Namibia. It occurs in vesicles within the phonolite, together with other species crystallized from late-stage hydrothermal fluids: natrolite, aegirine, microcline, apophyllite, sphalerite, analcime, fluorite, villiaumite, hydroxylapatite, galena, makatite, quartz, eudialyte, kanemite, tuperssuatsiaite and korobitsynite. Sazhinite-(La) forms small euhedral crystals up to 1 mm long and 0.4 mm wide, elongated along [001] and flattened on (010), exhibiting the forms {h0l}, {100} and {001}. It has good cleavage parallel to {010} and {001}. Twinning was not observed. Crystals are brittle with a Mohs hardness of 3, creamy white with a white streak, vitreous to pearly lustre, and translucent to transparent. In plane-polarized light, crystals are colourless with a = Z, b = Y, c = X. It is biaxial positive with α = 1.524, β = 1.528, γ = 1.544, all ±0.002, 2Vz(obs) = 46(1)°, and 2Vz(calc.) = 53.6°.Sazhmite-(La) is orthorhombic Pmm2, a = 7.415(2), b = 15.515(3), c = 7.164(1) Å, and V = 824.2 Å3. One crystal was studied by X-ray diffraction, electron microprobe and secondary ion mass spectrometry (SIMS) microanalysis, leading to the average composition (Na2.87K0.02Sr0.01)Σ2.90 [La0.41Ce0.35Pr0.02Nd0.04(Sm,Gd,Dy,Er,Yb)Σ0.01Th0.09U0.01Y0.01Zr0.01Ca0.08Li0.01]Σ1.04 (S15.87S0.06B0.01) (O14.86F0.14).(H2O)2.Weighted full-matrix least-squares refinement on 3369 reflections yielded Rall = 3.8%. The structure is built of corrugated [Si6O15]6- layers linked by [7]-coordinated REE and R4+ cations. This framework leaves channels that contain three [5]- and [6]-coordinated Na cations per formula unit that compensate for the residual charge on the silicate layers. The SIMS analyses confirm a Na content of 3 atoms per formula unit, leading to an ideal formula of Na3LaSi6O15(H2O)2. The third Na atom is bonded to H2O groups and therefore the total content of both Na and H2O may be reduced to 2 and 1 per formula, respectively. The depletion in Na allows for the entrance of high-charge cations such as Th4+.

Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
P. Fons ◽  
S. Niki ◽  
A. Yamada ◽  
A. Okada ◽  
D.J. Tweet
Keyword(s):  
Thin Film ◽  
Secondary Ion Mass Spectrometry ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
State Of Stress ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTA series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

Structural and Electrical Properties of (Cu, Co) Co-Doped ZnO Thin Film

2013 ◽  
Vol 774-776 ◽  
pp. 964-967
Author(s):  
Ping Cao ◽  
Yue Bai
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Hall Effect Measurement ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Co Doping ◽  
Structural And Electrical Properties ◽  
Doped Zno ◽  
Cu Ions ◽  
Co Doped

Successful synthesis of Cu, Co co-doped ZnO film is obtained by sol-gel method. The structural and electrical properties of the sample were investigated. X-ray diffraction spectroscopy analyses indicate that the Co and Cu co-doping can not disturb the structure of ZnO. No additional peaks are observed in the Zn0.99Co0.01CuxO and Cu+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. By Hall-effect measurement p-type conductivity was observed for the Cu co-doped film. XPS result confirmed Cu ions are univalent in the films.

Investigate the Characteristics of 0.65(K0.5Bi0.5TiO3)-0.35BaTiO3 Films at Various Deposition Temperatures

2013 ◽  
Vol 813 ◽  
pp. 372-376
Author(s):  
W.C. Tzou ◽  
C.G. Kuo ◽  
P.S. Cheng ◽  
Y.H. Lin ◽  
Cheng Fu Yang
Keyword(s):  
Deposition Temperature ◽  
Room Temperature ◽  
Rf Sputtering ◽  
Calcination Process ◽  
Crystalline Orientation ◽  
Capacitance Voltage ◽  
Apparent Variation ◽  
Xrd Patterns ◽  
Electric Filed ◽  
Surface Morphologies

0.65(K0.5Bi0.5)TiO30.35BaTiO3 (KBT-BT3) ceramics were synthesized using a two-step calcination process that combined hydrothermal and conventional calcination processes. After sintered into ceramic target, KBT-BT3 films were deposited on Pt/Ti/Si and SiO2/Si/Al substrates by radio frequency magnetron (RF) sputtering at various temperatures. The surface morphologies and thicknesses of KBT-BT3 films were characterized by field emission scanning electron microscopy, and the thickness increased with increasing deposition temperature. XRD patterns showed that all KBT-BT3 films were amorphous and higher deposition temperature had no apparent effects to improve the crystalline orientation. The effects of deposition temperatures on the properties of the current-electric filed, polarization-applied electric field, and capacitance-voltage curves were also investigated. As deposition temperatures of KBT-BT3 films increased from room temperature to 400°C, the leakage current density had no apparent variation but the threshold voltage was shifted to lower value. The theorems for the effects of deposition temperature on the properties of KBT-BT3 films were also investigated.

Lateral Boron Distribution in Polycrystalline SiC Source Materials

2013 ◽  
Vol 740-742 ◽  
pp. 397-400 ◽  
Author(s):  
Margareta K. Linnarsson ◽  
Michl Kaiser ◽  
Rickard Liljedahl ◽  
Valdas Jokubavicius ◽  
Yi Yu Ou ◽  
...  
Keyword(s):  
Boron Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Concentration ◽  
Vapor Transport ◽  
White Leds ◽  
Depth Profiles ◽  
Boron Distribution ◽  
Secondary Ion ◽  
Source Materials ◽  
Co Doped

Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup. The materials are co-doped materials with nitrogen and boron to a concentration of 1x1018 cm-3 and 1x1019 cm-3, respectively. Depth profiles as well as ion images have been recorded. According to ocular inspection, the analyzed poly-SiC consists mainly of 4H-SiC and 6H-SiC grains. In these grains, the boron concentration is higher and the nitrogen concentration is lower in the 6H-SiC compared to the 4H-SiC polytype. No inter-diffusion between grains is observed.

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