scholarly journals Optimization of piezoelectric MEMS process on Sr and La co-doped PZT thin films

2020 ◽  
Vol 10 (04) ◽  
pp. 2050010
Author(s):  
M. Kathiresan ◽  
Jain Jose ◽  
E. Varadarajan ◽  
R. Ramesh ◽  
V. Natarajan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Etching Rate ◽  
Dry Etching ◽  
Mems Devices ◽  
Pzt Thin Films ◽  
Sensing Applications ◽  
Piezoelectric Mems ◽  
Co Doped

Doped lead–zirconate–titanate (PZT) thin films are preferred for the development of micro–electro–mechanical systems (MEMS)-based acoustic sensors because of their inherent higher dielectric and piezoelectric coefficients. Patterning process is used to develop such MEMS devices which is highly complex even for undoped PZT thin films; therefore, the problem is further cumbersome for doped PZT thin films due to the presence of added dopant elements and their associated chemistry. This paper presents patterning of strontium (Sr) and lanthanum (La) co-doped PZT thin film (PSLZT) deposited on platinized silicon substrate using wet and dry etching processes for fabricating a diaphragm structure with thickness of 15–25[Formula: see text][Formula: see text]m and diameter of 1.4–2[Formula: see text]mm, suitable for acoustic sensing applications. The effects of various etching conditions have been studied and the results are reported. It is found that the dry etching is the most suited process for realizing the piezoelectric MEMS structure due to its higher etching resolution. An appreciable etching rate of 260–270[Formula: see text]nm/min with smooth vertical sidewalls is achieved. The silicon diaphragm with patterned PSLZT thin film is found to retain more than 80% of its dielectric and piezoelectric coefficients and has a resonance of 1.43[Formula: see text]MHz.

Effect of Annealing Treatment on PZT Thin Fiilm Properties Using Oxygen 18 Depth Profiling Technique

1998 ◽  
Vol 541 ◽  
Author(s):  
F. Ayguavives ◽  
B. Ea-Kim ◽  
B. Agius ◽  
I. Vickridge ◽  
A. I. Kingon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Plasma Deposition ◽  
Annealing Treatment ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition ◽  
Pzt Thin Films ◽  
Pzt Thin Film ◽  
Metallic Target

AbstractLead zirconate titanate (PZT) thin films have been deposited in a reactive argon/oxygen gas mixture from a metallic target of nominal composition Pb1.1(Zr0.4Ti0.6)O3 by rf magnetron sputtering on Si substrates and RuO2/SiO2/Si structures. During plasma deposition, in situ Optical Emission Spectroscopy (OES) measurements clearly show a correlation between the evolution of characteristic atomic emission line intensities and the thin film composition determined by simultaneous Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA). As a result, the cathode surface state can be monitored by OES to ensure a good compositional transferability from the target to the film and reproducibility of thin film properties for given values of deposition parameters. Electrical properties and crystallization have been optimized with a 90 nm PZT thin film grown on RuO2 electrodes. These PZT films, annealed with a very modest thermal budget (550°C) are fatigue-free and show very low leakage currents (J=2.10−8 A/cm2 at 1 V). The use of a metallic target allows us to control the oxygen incorporation in the PZT thin film and also, using 18O as a tracer, to study the oxygen vacancy migration which plays a key role in fatigue, leakage current, and electrical degradation/breakdown in PZT thin films.

Effect of La Dopant on Electrical Properties of Pb(Zr,Ti)O3 Thin Film Capacitors

1999 ◽  
Vol 596 ◽  
Author(s):  
Chang Jung Kim ◽  
Ilsub Chung
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Random Access ◽  
Lead Zirconate ◽  
Second Phase ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Thin Film Capacitors

AbstractLanthanum doped lead zirconate titanate (PZT) thin films have been prepared on Pt/IrO2/Ir/SiO2/Si substrates to improve the ferroelectric and retention properties. The microstructure and electrical properties of the PZT capacitors were evaluated as a function of La content. The crystalline orientation was appreciably influenced by the addition of La in PZT thin films. The microstructures of films containing 0 and 0.5 mol% La were single phase perovskite, but for La = 1 mol%, a second phase was detected by SEM observation. The 0.5 mol% La doped PZT thin film capacitor showed the best ferroelectric and retention properties for ferroelectric random access memory compared to non-doped PZT.

scholarly journals Synthesis, Microstructure and Properties of Magnetron Sputtered Lead Zirconate Titanate (PZT) Thin Film Coatings

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 944
Author(s):  
Youcao Ma ◽  
Jian Song ◽  
Xubo Wang ◽  
Yue Liu ◽  
Jia Zhou
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Influential Factors ◽  
Mems Devices ◽  
Large Area ◽  
Pzt Thin Films ◽  
Synthesis Parameters ◽  
Zirconate Titanate

Compared to aluminum nitride (AlN) with simple stoichiometry, lead zirconate titanate thin films (PZT) are the other promising candidate in advanced micro-electro-mechanical system (MEMS) devices due to their excellent piezoelectric and dielectric properties. The fabrication of PZT thin films with a large area is challenging but in urgent demand. Therefore, it is necessary to establish the relationships between synthesis parameters and specific properties. Compared to sol-gel and pulsed laser deposition techniques, this review highlights a magnetron sputtering technique owing to its high feasibility and controllability. In this review, we survey the microstructural characteristics of PZT thin films, as well as synthesis parameters (such as substrate, deposition temperature, gas atmosphere, and annealing temperature, etc.) and functional proper-ties (such as dielectric, piezoelectric, and ferroelectric, etc). The dependence of these influential factors is particularly emphasized in this review, which could provide experimental guidance for researchers to acquire PZT thin films with expected properties by a magnetron sputtering technique.

Measurements of Piezoelectric Coefficient d33 of Lead Zirconate Titanate Thin Films Using a Mini Force Hammer

2013 ◽  
Vol 135 (1) ◽  
Author(s):  
Qing Guo ◽  
G. Z. Cao ◽  
I. Y. Shen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Lead Zirconate ◽  
New Method ◽  
Impulsive Force ◽  
Pzt Thin Films ◽  
Zirconate Titanate ◽  
Pzt Thin Film

Lead zirconate titanate (PbZrxTi1-xO3, or PZT) is a piezoelectric material widely used as sensors and actuators. For microactuators, PZT often appears in the form of thin films to maintain proper aspect ratios. One major challenge encountered is accurate measurement of piezoelectric coefficients of PZT thin films. In this paper, we present a simple, low-cost, and effective method to measure piezoelectric coefficient d33 of PZT thin films through use of basic principles in mechanics of vibration. A small impact hammer with a tiny tip acts perpendicularly to the PZT thin-film surface to generate an impulsive force. In the meantime, a load cell at the hammer tip measures the impulsive force and a charge amplifier measures the responding charge of the PZT thin film. Then the piezoelectric coefficient d33 is obtained from the measured force and charge based on piezoelectricity and a finite element modeling. We also conduct a thorough parametric study to understand the sensitivity of this method on various parameters, such as substrate material, boundary conditions, specimen size, specimen thickness, thickness ratio, and PZT thin-film material. Two rounds of experiments are conducted to demonstrate the feasibility and accuracy of this new method. The first experiment is to measure d33 of a PZT disk resonator whose d33 is known. Experimental results show that d33 measured via this method is as accurate as that from the manufacturer's specifications within its tolerance. The second experiment is to measure d33 of PZT thin films deposited on silicon substrates. With the measured d33, we predict the displacement of PZT thin-film membrane microactuators. In the meantime, the actuator displacement is measured via a laser Doppler vibrometer. The predicted and measured displacements agree very well validating the accuracy of this new method.

scholarly journals X-ray Photoelectron Spectroscopy Analysis of Chitosan–Graphene Oxide-Based Composite Thin Films for Potential Optical Sensing Applications

Polymers ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 478
Author(s):  
Wan Mohd Ebtisyam Mustaqim Mohd Daniyal ◽  
Yap Wing Fen ◽  
Silvan Saleviter ◽  
Narong Chanlek ◽  
Hideki Nakajima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Functional Group ◽  
Optical Sensing ◽  
Composite Thin Films ◽  
Cobalt Ions ◽  
X Ray ◽  
Sensing Applications

In this study, X-ray photoelectron spectroscopy (XPS) was used to study chitosan–graphene oxide (chitosan–GO) incorporated with 4-(2-pyridylazo)resorcinol (PAR) and cadmium sulfide quantum dot (CdS QD) composite thin films for the potential optical sensing of cobalt ions (Co2+). From the XPS results, it was confirmed that carbon, oxygen, and nitrogen elements existed on the PAR–chitosan–GO thin film, while for CdS QD–chitosan–GO, the existence of carbon, oxygen, cadmium, nitrogen, and sulfur were confirmed. Further deconvolution of each element using the Gaussian–Lorentzian curve fitting program revealed the sub-peak component of each element and hence the corresponding functional group was identified. Next, investigation using surface plasmon resonance (SPR) optical sensor proved that both chitosan–GO-based thin films were able to detect Co2+ as low as 0.01 ppm for both composite thin films, while the PAR had the higher binding affinity. The interaction of the Co2+ with the thin films was characterized again using XPS to confirm the functional group involved during the reaction. The XPS results proved that primary amino in the PAR–chitosan–GO thin film contributed more important role for the reaction with Co2+, as in agreement with the SPR results.

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

Growth, Structural and Mechanical Characterization and Reliability of Chemical Vapor Deposited Co and Co3O4 Thin Films as Candidate Materials for Sensing Applications

2011 ◽  
Vol 495 ◽  
pp. 108-111 ◽  
Author(s):  
Vasiliki P. Tsikourkitoudi ◽  
Elias P. Koumoulos ◽  
Nikolaos Papadopoulos ◽  
Costas A. Charitidis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Elastic Modulus ◽  
Data Storage ◽  
Mechanical Stability ◽  
Chemical Vapor ◽  
Magnetic Sensors ◽  
Functional Coatings ◽  
Sensing Applications ◽  
Chemical Vapor Deposited

The adhesion and mechanical stability of thin film coatings on substrates is increasingly becoming a key issue in device reliability as magnetic and storage technology driven products demand smaller, thinner and more complex functional coatings. In the present study, chemical vapor deposited Co and Co3O4thin films on SiO2and Si substrates are produced, respectively. Chemical vapor deposition is the most widely used deposition technique which produces thin films well adherent to the substrate. Co and Co3O4thin films can be used in innovative applications such as magnetic sensors, data storage devices and protective layers. The produced thin films are characterized using nanoindentation technique and their nanomechanical properties (hardness and elastic modulus) are obtained. Finally, an evaluation of the reliability of each thin film (wear analysis) is performed using the hardness to elastic modulus ratio in correlation to the ratio of irreversible work to total work for a complete loading-unloading procedure.

Microstructure of Solution-Processed Lead Zirconate Titanate (PZT) Thin Films

1991 ◽  
Vol 74 (6) ◽  
pp. 1455-1458 ◽  
Author(s):  
Altaf H. Carim ◽  
Bruce A. Tuttle ◽  
Daniel H. Doughty ◽  
Sheri L. Martinez
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Solution Processed ◽  
Pzt Thin Films ◽  
Zirconate Titanate

Preparation of pzt thin films on Pt/Ti/SiO2 and Pt/SiO2 Substrates by ECR Plasma Enhanced DC Magnetron Multi-target Reactive Sputtering

1996 ◽  
Vol 441 ◽  
Author(s):  
Sung-Tae Kim ◽  
Hyun-Ho Kim ◽  
Moon-Yong Lee ◽  
Won-Jong Lee
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Electron Cyclotron Resonance ◽  
Perovskite Phase ◽  
Early Stage ◽  
Reactive Sputtering ◽  
Deposition Process ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Ecr Plasma

AbstractPerovskite-phase lead zirconate titanate (PZT) thin films were fabricated at 4751C by the electron cyclotron resonance (ECR) plasma enhanced DC magnetron multi-target reactive sputtering method on Pt/Ti/SiO2/Si and Pt/SiO2/Si substrates. Stoichiometric perovskite PZT films were readily obtained on Pt/Ti/SiO2/Si substrates because Ti atoms which were out-diffused to the Pt surface facilitated Pb incorporation by forming lead titanate at the early stage of deposition process. Activation of oxygen by ECR plasma facilitated the oxidation reaction and Pb incorporation into the film. Thus perovskite-phase PZT can be obtained on the Pt/SiO2/Si substrate.

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