scholarly journals Obtaining, structure, microstructure and dielectric characteristics of ceramics and thin films of ferro-piezoelectric materials based on the PZT system

2020 ◽  
Vol 10 (01n02) ◽  
pp. 2060003
Author(s):  
Inna Andryushina ◽  
Anatoliy Pavlenko ◽  
Sergey Zinchenko ◽  
Konstantin Andryushin ◽  
Lidiya Shilkina ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Piezoelectric Properties ◽  
Bulk Material ◽  
Piezoelectric Materials ◽  
Hysteresis Loops ◽  
Dielectric Characteristics ◽  
Hard Materials ◽  
Alternating Electric Field ◽  
Capacitance Voltage

This paper presents the results of studies of the structure, microstructure, dependences of the piezoelectric properties on the electric field (dielectric hysteresis loops, reversible nonlinearity, deformation characteristics) and dielectric properties of the ceramic material PCR-13 (based on the PZT system) in the temperature range 300–900[Formula: see text]K and frequencies of an alternating electric field ([Formula: see text]) Hz. The character of the obtained dependences made it possible to attribute PCR-13 to ferro-hard materials. Using the HF cathodic sputtering method, PCR-13 thin films were fabricated on Si (001) substrates. It is shown that they are polycrystalline textured, while in comparison with bulk material, the film contains tensile stresses of the unit cell in the plane of the substrate and compresses in the perpendicular direction with the value [Formula: see text]. The capacitance-voltage characteristics of the Al/PCR-13/Si/Al heterostructure were studied. The reasons for the revealed patterns are discussed.

Shape of piezoelectric hysteresis loop for non-ferroelastic switching

2003 ◽  
Vol 784 ◽  
Author(s):  
A. K. Tagantsev ◽  
P. Muralt ◽  
J. Fousek
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hysteresis Loop ◽  
Single Crystals ◽  
Applied Electric Field ◽  
Piezoelectric Coefficient ◽  
Hysteresis Loops ◽  
Simple Theory ◽  
The Difference

ABSTRACTA simple theory for the shape of the piezoelectric hysteresis loops (piezoelectric coefficient d vs. applied electric field E) is developed for the case of non-ferroelelastic 180° switching in ferroelectrics. The theory provides explanations for specific features of piezoelectric hysteresis loops, which have been observed in single crystals, thin films and in ceramics in particular. The piezoelectric coefficient may show a “hump”, i.e. when E decreases from the tip of the loop down to zero, d passes through a maximum, and a “nose”, i.e. a self-crossing of the loop close to its tips. The theory also explains the difference in the coercive fields seen in the polarization and piezoelectric loops.

ENHANCED DIELECTRIC CHARACTERISTICS OF MANGANESE-DOPED BZT THIN FILMS

2008 ◽  
Vol 15 (01n02) ◽  
pp. 29-33 ◽  
Author(s):  
J. ZHU ◽  
W. J. JIE ◽  
X. H. WEI ◽  
W. F. QIN ◽  
Y. ZHANG ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Figure Of Merit ◽  
Growth Conditions ◽  
Dielectric Behavior ◽  
X Ray Diffraction ◽  
Dielectric Characteristics ◽  
Mn Doping ◽  
X Ray ◽  
Relationship Of

Ba ( Zr 0.2 Ti 0.8) O 3 (BZT) and 2 mol% Mn additional doped BZT ( Mn -BZT) thin films were deposited by pulsed laser deposition technique under the same growth conditions on LaAlO 3 substrates with the bottom electrodes of LaNiO 3. The microstructure of the films was characterized by X-ray diffraction (XRD) in the mode of θ–2θ scan and Φ-scan. The results indicated that BZT film was (001)-oriented_with an in-plane relationship of BZT[100]//LNO[100]//LAO[100]. The Mn -BZT film exhibited higher dielectric constant of 225 at zero electric field, larger dielectric tunability of 59.4%, and lower dielectric loss of 1.8% under an applied electric field of 720 kV/cm. The figure of merit for BZT thin film increased from 19.8 to 33 by Mn doping. The enhanced dielectric behavior by Mn doping could be mainly attributed to the decrease of oxygen vacancies and the reorientation of the dipolar defect complex of [Formula: see text].

Dynamical Nonlinearities in Piezoelectric Materials

2007 ◽  
Vol 1034 ◽  
Author(s):  
Eira Seppälä ◽  
Virpi Korpelainen ◽  
Kari Ojasalo ◽  
Matti Sarjala ◽  
Mikko Alava ◽  
...  
Keyword(s):  
Bulk Material ◽  
Piezoelectric Materials ◽  
Hysteresis Loops ◽  
Sample Surface ◽  
Electric Polarization ◽  
Ferroelectric Materials ◽  
Laser Vibrometer ◽  
Ginzburg Landau ◽  
Atomic Force ◽  
Quenched Randomness

AbstractDynamical nonlinearities in piezoelectric materials have been investigated over different time and frequency scales using four different methods; measurements of displacement and electric polarization of bulk material, measurements of nanometer scale surface structure of the material by an atomic force microscope (AFM), and numerical modelling of ferroelectric materials with quenched randomness. Laser vibrometer measurements of the deformations of piezoelectric materials, d31 type PZT and PMN-PT sheets, have been done under sinusoidal voltage loading with different frequencies. This yields information about the dynamical hysteresis behavior, such as the area of the hysteresis loops as a function of the applied frequency f and voltage amplitude. Similarly the hysteresis loops have been measured for the electric polarization of the same samples. Relaxation behaviors of the same materials have been measured by an AFM. Topography of the piezo sheets was measured after applied DC voltage, indicating slow collective changes in the polarization close and at the sample surface. To investigate the time-dependent hysteresis, we have studied numerically a Ginzburg-Landau-Devonshire (GLD) model for ferroelectric materials including dilution type quenched randomness. Quantities studied include the area of the hysteresis loop, of the polarization in the material, and the coercive electric field Ec as a function of the frequency f, both as a function of the disorder strength.

scholarly journals Investigation of the dielectric fatigue on the example of lead titanate films PbTiO3

2021 ◽  
Vol 2086 (1) ◽  
pp. 012179
Author(s):  
A V Fimin ◽  
E A Pecherskaya ◽  
O A Timokhina ◽  
V S Aleksandrov ◽  
A V Volik ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Lead Titanate ◽  
Piecewise Linear ◽  
Hysteresis Loops ◽  
Ferroelectric Materials ◽  
Piecewise Linear Approximation ◽  
Residual Polarization

Abstract The phenomenon of dielectric fatigue of active dielectrics, which consists in a decrease in the residual polarization depending on the number of switching cycles, is researched. A model of the dependence of the residual polarization of ferroelectric materials on the number of switching cycles is proposed. The model is based on piecewise - linear approximation of the results of measurements of the hysteresis loops of thin films PbTiO3 at a temperature T = 470 (°C), the electric field strength E = 100 (kV/cm). The developed model was used in the development of a technique for studying dielectric fatigue, depending on different modes of material switching.

Kinematics and Kinetics of Alternating Electric Field Induced Liquid Mass Transport on Chromium Thin Films

2021 ◽  
Author(s):  
Swapnendu Narayan Ghosh ◽  
Vijayendra Shastri ◽  
Debjit Sarkar ◽  
Ebinesh Abraham ◽  
Santanu Talukder
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Mass Transport ◽  
Liquid Mass ◽  
Alternating Electric Field ◽  
Kinetics Of ◽  
Kinematics And Kinetics

High-Resolution Optical Microscopy Of BaXSr1−xTio3 Films

1997 ◽  
Vol 493 ◽  
Author(s):  
C. Hubert ◽  
J. Levy ◽  
A. C. Carter ◽  
W. Chang ◽  
J. M. Pond ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Optical Microscopy ◽  
Hysteresis Loops ◽  
Laser Deposition ◽  
Ac Electric Field ◽  
Ferroelectric Domain Structure ◽  
Dc Electric Field ◽  
Confocal Scanning ◽  
Scanning Optical Microscopy

ABSTRACTThe ferroelectric polarization of thin films of BaxSr1−xTiO3 is imaged using confocal scanning optical microscopy (CSOM). The thin films are grown by pulsed laser deposition (PLD) on SrTiO3 substrates. Ferroelectric domain structure is imaged by applying a small ac electric field across interdigitated electrodes, and measuring induced reflectivity changes in the film, which are directly related to the polarization. Domain re-orientation is observed by acquiring CSOM images as a function of the dc electric field. Local hysteresis loops are obtained by sweeping the dc electric field at fixed positions on the sample. Micrometer-sized regions exhibit both ferroelectric and paraelectric response, indicating that thermal broadening of the phase transition is largely due to inhomogeneities in the thin films.

Magnetization Effects in bulk YFeO3 and their dependency on electric field strength and temperature as a basis for thin film investigation of Multiferroic Technology

2011 ◽  
Vol 1292 ◽  
Author(s):  
A. Hinckley ◽  
R.K. Gupta ◽  
P.K. Kahol ◽  
K. Ghosh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rare Earth ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Bulk Material ◽  
Ferromagnetic Behavior ◽  
Ample Evidence ◽  
Saturation Magnetic Moment

ABSTRACTMultiferroics, the study of materials which possess ferromagnetic and ferroelectric ordering in a single phase, has become an area of prominent research. Moreover, this behavior has been extensively studied in materials which possess a perovskite crystal structure such as BiFeO3 and YMnO3. Due to their weak saturation magnetic moment, many rare-earth orthoferrites are currently of extreme interest. Utilizing a solid-state reaction between Y2O3 and Fe2O3 we have developed the rare-earth orthoferrite YFeO3 and conducted a bulk material study to determine this material’s availability for thin film multiferroic research. The absence of Y2O3 and Fe2O3 impurities was confirmed using Copper-Kα XRD. Examination of the dependence of the magnetization M on the temperature T was conducted to determine the reliability of multiferroic behavior across varying temperatures in conjunction with the investigation of the dependence of M on the electric field strength H. Results clearly display ferromagnetic behavior in our bulk material, providing ample evidence that our bulk material is an excellent candidate for thin film studies. Future studies on multiferroic YFeO3 thin films grown via pulsed laser deposition on Lanthanum Aluminate substrates will be conducted. Detailed data will be provided via XRD and SQUID to confirm magnetic properties while impurities are non-existent in our thin films.

scholarly journals Structural, dielectric and ferroelectric characterization of PZT thin films

Cerâmica ◽  
1999 ◽  
Vol 45 (292-293) ◽  
pp. 99-102
Author(s):  
E.B. Araújo ◽  
J.A. Eiras
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Hysteresis Loops ◽  
Average Thickness ◽  
Si Substrate ◽  
Precursor Method ◽  
Pzt Thin Films ◽  
Oxide Precursor ◽  
Capacitance Voltage

In this work ferroelectric thin films of PZT were prepared by the oxide precursor method, deposited on Pt/Si substrate. Films of 0.5 mm average thickness were obtained. Electrical and ferroelectric characterization were carried out in these films. The measured value of the dielectric constant for films was 455. Ferroelectricity was confirmed by Capacitance-Voltage (C-V) characteristics and P-E hysteresis loops. Remanent polarization for films presented value around 5.0 µC/cm2 and a coercive field of 88.8 kV/cm.

Properties of Na0.5Bi0.5TiO3-SrTiO3 Ferroelectric Thin Films Prepared by a Modified MOSD Process

2017 ◽  
Vol 744 ◽  
pp. 417-421
Author(s):  
Ya Ping Wang ◽  
Zhuo Wang ◽  
Da Ji Li ◽  
Ya Nan Cui ◽  
Zhi Juan Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Deposition Process ◽  
Solution Deposition ◽  
Si Substrates ◽  
Capacitance Voltage ◽  
Surface Microstructures ◽  
Switching Mode

0.82NBT-0.18ST and 0.85NBT-0.15ST thin films have been prepared on Si substrates by a modified metalorganic solution deposition process. To achieve films with better ferroelectric properties, three main items have been changed in the process. Then the crystal structures, surface microstructures, hysteresis loops, fatigue curves and capacitance-voltage curves of the films were measured. It can be found that NBT-ST films can crystallize well after annealing at 650 °C for 5 minutes and have smooth surface microstructures. The 0.85NBT-0.15ST thin films exhibit better well-defined hysteresis loops than 0.82NBT-0.18ST, with a remnant polarization of 1.1 mC/cm2 and a coercive fields of 44.2 kV/cm. The clockwise C-V curves show that they have a desired polarization-type switching mode. The memory window of 0.82NBT-0.18ST thin film is about 1.8V, and that of 0.85NBT-0.15ST thin film is about 2.5V.

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