X-Ray Emission Induced by 60 keV High-Flux Copper Negative-Ion Implantation

Merits and limitations of layered and ion implanted specimens as possible reference materials to calibrate spatially resolved analytical techniques are discussed and illustrated for the case of gold analysis in minerals by means of x-ray spectrometry with the EPMA. To overcome the random heterogeneities of minerals, thin film deposition and ion implantation may offer an original approach to the manufacture of controlled concentration/ distribution reference materials for quantification of trace elements with the same matrix as the unknown.In order to evaluate the accuracy of data obtained by EPMA we have compared measured and calculated x-ray intensities for homogeneous and heterogeneous specimens. Au Lα and Au Mα x-ray intensities were recorded at various electron beam energies, and hence at various sampling depths, for gold coated and gold implanted specimens. X-ray intensity calculations are based on the use of analytical expressions for both the depth ionization Φ (ρz) and the depth concentration C (ρz) distributions respectively.

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Negative-ion implantation into thin SiO2 layer for defined nanoparticle formation

Review of Scientific Instruments ◽

10.1063/1.2163287 ◽

2006 ◽

Vol 77 (3) ◽

pp. 03A510 ◽

Cited By ~ 6

Author(s):

Hiroshi Tsuji ◽

Nobutoshi Arai ◽

Naoyuki Gotoh ◽

Takashi Minotani ◽

Toyoji Ishibashi ◽

...

Keyword(s):

Ion Implantation ◽

Sio2 Layer ◽

Negative Ion ◽

Nanoparticle Formation

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Development of Diamond-Based X-ray Detection for High Flux Beamline Diagnostics

MRS Proceedings ◽

10.1557/proc-1203-j19-03 ◽

2009 ◽

Vol 1203 ◽

Author(s):

Jen Bohon ◽

John Smedley ◽

Erik M. Muller ◽

Jeffrey W. Keister

Keyword(s):

Single Crystal ◽

Linear Response ◽

Voltage Dependence ◽

Cvd Diamond ◽

High Flux ◽

National Synchrotron Light Source ◽

X Ray ◽

Single Crystal Diamond ◽

Synchrotron Light ◽

Pulse Structure

AbstractHigh quality single crystal and polycrystalline CVD diamond detectors with platinum contacts have been tested at the white beam X28C beamline at the National Synchrotron Light Source under high-flux conditions. The voltage dependence of these devices has been measured under DC and pulsed-bias conditions, establishing the presence or absence of photoconductive gain in each device. Linear response has been achieved over eleven orders of magnitude when combined with previous low flux studies. Temporal measurements with single crystal diamond detectors have resolved the ns scale pulse structure of the NSLS.

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Optical properties of anatase TiO2 films modified by N ion implantation

Canadian Journal of Physics ◽

10.1139/p11-136 ◽

2012 ◽

Vol 90 (1) ◽

pp. 39-43 ◽

Cited By ~ 2

Author(s):

X. Xiang ◽

D. Chang ◽

Y. Jiang ◽

C.M. Liu ◽

X.T. Zu

Keyword(s):

Thin Films ◽

Ion Implantation ◽

Photoelectron Spectroscopy ◽

Radio Frequency Magnetron Sputtering ◽

X Ray Diffraction ◽

X Ray ◽

Atomic Force ◽

Light Region ◽

Uv Visible ◽

Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

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Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

MRS Proceedings ◽

10.1557/proc-262-1079 ◽

1992 ◽

Vol 262 ◽

Cited By ~ 7

Author(s):

D. Y. C. Lie ◽

A. Vantomme ◽

F. Eisen ◽

M. -A. Nicolet ◽

V. Arbet-Engels ◽

...

Keyword(s):

Ion Implantation ◽

Single Crystals ◽

Room Temperature ◽

Defect Concentration ◽

Double Crystal ◽

X Ray ◽

Positive Strain ◽

Independent Coefficient ◽

The Relationship ◽

Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

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Negative-Ion Implantation

MRS Proceedings ◽

10.1557/proc-354-99 ◽

1994 ◽

Vol 354 ◽

Cited By ~ 1

Author(s):

Junzo Ishikawa

Keyword(s):

Ion Implantation ◽

Negative Ions ◽

Ion Source ◽

Negative Ion ◽

Rf Plasma ◽

Ion Currents ◽

Promising Technique ◽

Surface Charging ◽

Silicon Carbon ◽

A Charge

AbstractNegative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.

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Iodixanol is readily eliminated by hemodialysis

Acta Radiologica ◽

10.1080/02841859809172447 ◽

1998 ◽

Vol 39 (4) ◽

pp. 372-374 ◽

Cited By ~ 7

Author(s):

K. J. Berg ◽

B. Rolfsen ◽

G. Stake

Keyword(s):

Blood Flow ◽

Contrast Medium ◽

Hollow Fiber ◽

Cellulose Triacetate ◽

High Flux ◽

Hollow Fiber Membranes ◽

Polysulfone Membrane ◽

Membrane Area ◽

X Ray

Purpose, Material and Methods, and Results: The dialyzability of the high-molecular X-ray contrast medium iodixanol was examined in an in vitro hemo-dialysis model using two different hollow fiber membranes: one high-flux (polysulfone) membrane and one intermediate-flux (cellulose triacetate) membrane. Blood flow was 200 ml/min and membrane area 1.3 m2. The dialyzer clearance of iodixanol dissolved in a mixture of leukocyte-filtered SAG-M blood and compatible citrate plasma was 134.2±3.6 ml/min for the polysulfone membrane and 113.0±3.6 ml/min for the cellulose triacetate membrane. Conclusion: Iodixanol is readily dialyzed through commercial high-flux membranes.

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