Crystal Structure of Silicon Carbide of 174 Layers

1960 ◽  
Vol 15 (1) ◽  
pp. 99-105 ◽  
Author(s):  
Takanori Tomita
2021 ◽  
Vol 7 (14) ◽  
pp. eabf2690
Author(s):  
J. Duan ◽  
G. Álvarez-Pérez ◽  
K. V. Voronin ◽  
I. Prieto ◽  
J. Taboada-Gutiérrez ◽  
...  

Polaritons with directional in-plane propagation and ultralow losses in van der Waals (vdW) crystals promise unprecedented manipulation of light at the nanoscale. However, these polaritons present a crucial limitation: their directional propagation is intrinsically determined by the crystal structure of the host material, imposing forbidden directions of propagation. Here, we demonstrate that directional polaritons (in-plane hyperbolic phonon polaritons) in a vdW crystal (α-phase molybdenum trioxide) can be directed along forbidden directions by inducing an optical topological transition, which emerges when the slab is placed on a substrate with a given negative permittivity (4H–silicon carbide). By visualizing the transition in real space, we observe exotic polaritonic states between mutually orthogonal hyperbolic regimes, which unveil the topological origin of the transition: a gap opening in the dispersion. This work provides insights into optical topological transitions in vdW crystals, which introduce a route to direct light at the nanoscale.


1998 ◽  
Vol 13 (7) ◽  
pp. 1816-1822 ◽  
Author(s):  
R. S. Kern ◽  
L. B. Rowland ◽  
S. Tanaka ◽  
R. F. Davis

Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC) have been grown at 900–1300 °C on vicinal α (6H)-SiC(0001) substrates by plasma-assisted, gas-source molecular beam epitaxy. Under specific processing conditions, films of (AlN)x(SiC) 1−x with 0.2 ≤ x ≤ 0.8, as determined by Auger electron spectrometry (AES), were deposited. Reflection high-energy electron diffraction (RHEED) was used to determine the crystalline quality, surface character, and epilayer polytype. Analysis of the resulting surfaces was also performed by scanning electron microscopy (SEM). High-resolution transmission electron microscopy (HRTEM) revealed that monocrystalline films with x ≥ 0.25 had the wurtzite (2H) crystal structure; however, films with x < 0.25 had the zincblende (3C) crystal structure.


1986 ◽  
Vol 97 (2) ◽  
pp. 347-351 ◽  
Author(s):  
M. S. Saidov ◽  
Kh. A. Shamuratov ◽  
M. A. Kadyrov ◽  
S. I. Vlaskina

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Galina Volkova ◽  
Oleksandr Doroshkevych ◽  
Artem Shylo ◽  
Tetyana Zelenyak ◽  
Valeriy Burkhovetskiy ◽  
...  

Processes of sintering of silicon carbide nanopowder were investigated. Values of density (ρ=3.17 g/cm3) and strength (σ=450 MPa) were obtained. Within the theory of dispersed systems, the temperature evolution of the materials structure was considered. The relationship between sintering temperature, characteristics of crystal structure and physical properties, in particular, density, and strength of aforementioned ceramics was established. It was concluded that it is necessary to suppress the anomalous diffusion at temperatures above 2080°C.


1998 ◽  
Vol 542 ◽  
Author(s):  
Lianchao Sun ◽  
James E. Crocker ◽  
Leon L. Shaw ◽  
Harris L. Marcus

AbstractIn this work, the deposition of silicon carbide lines using a tetramethylsilane (TMS) precursor was investigated. Effects of target temperatures on the morphology and crystal structure of the deposits were examined. It was found that the morphology of the SALD SiC depends strongly on the target temperature. The contour of the cross section of the SiC deposits changes from a triangle to trapezoid to volcano shape and the surface morphology of the deposited lines changes from smooth to rough to porous as the target temperature increases. A critical target temperature was found to be about 700°C to initiate deposition of SiC under the current experimental configurations. X-ray diffraction analyses show that the SALD SiC formed at 1000°C contains both crystalline and amorphous phases. The results are briefly discussed.


2019 ◽  
Vol 222 ◽  
pp. 02013
Author(s):  
Alina Kuznetsova ◽  
Mikhail Dolgopolov ◽  
Albina Gurskaya ◽  
Viktor Chepurnov ◽  
Galina Puzyrnaya ◽  
...  

The endotaxia is the process of growth of one crystal structure inside the volume of another. In this case we are talking about the formation of the Silicon Carbide film in the Silicon substrate. The Silicon substrate is placed in the gas chamber. The sample is exposed to the stream of methane gas CH4 at temperature of 1360 - 1380 ◦C and at normal pressure. Moreover, gas contains both the stable Carbon isotope C12 and the radioactive Carbon isotope C14, and hydrogen H2 in the gas acts as a carrier of Carbon.


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