Signal Integrity Analysis in Single and Bundled Carbon Nanotube Interconnects

Carbon nanotube (CNT) can be considered as an emerging interconnect material in current nanoscale regime. They are more promising than other interconnect materials such as Al or Cu because of their robustness to electromigration. This research paper aims to address the crosstalk-related issues (signal integrity) in interconnect lines. Different analytical models of single- (SWCNT), double- (DWCNT), and multiwalled CNTs (MWCNT) are studied to analyze the crosstalk delay at global interconnect lengths. A capacitively coupled three-line bus architecture employing CMOS driver is used for accurate estimation of crosstalk delay. Each line in bus architecture is represented with the equivalent RLC models of single and bundled SWCNT, DWCNT, and MWCNT interconnects. Crosstalk delay is observed at middle line (victim) when it switches in opposite direction with respect to the other two lines (aggressors). Using the data predicted by ITRS 2012, a comparative analysis on the basis of crosstalk delay is performed for bundled SWCNT/DWCNT and single MWCNT interconnects. It is observed that the overall crosstalk delay is improved by 40.92% and 21.37% for single MWCNT in comparison to bundled SWCNT and bundled DWCNT interconnects, respectively.

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Bundled SWCNT for Global VLSI Interconnects

Advances in Computer and Electrical Engineering - Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) ◽

10.4018/978-1-7998-1393-4.ch008 ◽

2020 ◽

pp. 160-188

Author(s):

Raj Kumar ◽

Shashi Bala

Keyword(s):

Mechanical Properties ◽

Carbon Nanotube ◽

Transition Time ◽

Equivalent Model ◽

Suitable Material ◽

Vlsi Interconnects ◽

Copper Interconnect ◽

Parallel Lines ◽

Bus Architecture ◽

Interconnect Material

Carbon nanotube (CNT) has been declared the most attractive and suitable material for VLSI sub-micron technology. Because of CNT's phenomenal physical, electrical, and mechanical properties, it is more advantageous than copper interconnect material. In this chapter, RLC equivalent model of bundled single-wall CNT (SWCNT) is presented by using driver-interconnect-load (DIL) system with CMOS driver. The crosstalk delay is calculated for two-line bus architecture made of two parallel lines (i.e., upper as aggressor and lower as victim). From the simulation, it has been observed that crosstalk delay increases with increase in interconnect length and transition time, whereas it decreases with increased spacing between the lines (aggressor and victim). However, crosstalk delay decreases as the number of tubes in a bundle increases.

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Signal Integrity Analysis in Carbon Nanotube Based Through-Silicon Via

Active and Passive Electronic Components ◽

10.1155/2014/524107 ◽

2014 ◽

Vol 2014 ◽

pp. 1-7 ◽

Cited By ~ 1

Author(s):

Manoj Kumar Majumder ◽

Archana Kumari ◽

Brajesh Kumar Kaushik ◽

Sanjeev Kumar Manhas

Keyword(s):

Carbon Nanotube ◽

Signal Integrity ◽

Research Paper ◽

Integrated System ◽

Phase Delay ◽

Filler Materials ◽

Electrical Model ◽

Materials Used ◽

Silicon Vias ◽

Integrity Analysis

Development of a reliable 3D integrated system is largely dependent on the choice of filler materials used in through-silicon vias (TSVs). This research paper presents carbon nanotube (CNT) bundles as prospective filler materials for TSVs and provides an analysis of signal integrity for different single- (SWCNT), double- (DWCNT), and multi-walled CNT (MWCNT) bundle based TSVs. Depending on the physical configuration of a pair of TSVs, an equivalent electrical model is employed to analyze the in-phase and out-phase delays. It is observed that, using an MWCNT bundle (with number of shells = 10), the overall in-phase delays are reduced by 96.86%, 92.33%, 78.35%, and 32.72% compared to the bundled SWCNT, DWCNT, 4-shell MWCNT, and 8-shell MWCNT, respectively; similarly, the overall reduction in out-phase delay is 85.89%, 73.38%, 45.92%, and 12.56%, respectively.

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