scholarly journals Electrical Characterization of Nanopolyaniline/Porous Silicon Heterojunction at High Temperatures

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Salah E. El-Zohary ◽  
M. A. Shenashen ◽  
Nageh K. Allam ◽  
T. Okamoto ◽  
M. Haraguchi
Keyword(s):  
Electron Microscopy ◽  
Porous Silicon ◽  
Ideality Factor ◽  
Series Resistance ◽  
In Situ Polymerization ◽  
Electrical Characterization ◽  
Different Temperatures ◽  
Diode Behavior ◽  
Increasing Temperature ◽  
P Type

Nanopolyaniline/p-type porous silicon (NPANI/PSi) heterojunction films were chemically fabricated via in situ polymerization. The composition and morphology of the nanopolymer were confirmed using Fourier transform infrared, scanning electron microscopy, UV-visible, and transmission electron microscopy techniques. The results indicated that the polymerization took place throughout the porous layer. TheI-Vmeasurements, performed at different temperatures, enabled the calculation of ideality factor, barrier height, and series resistance of those films. The obtained ideality factor showed a nonideal diode behavior. The series resistance was found to decrease with increasing temperature.

Temperature dependant electrical properties of formyl-TIPPCu(II)/p-Si heterojunction diode

2014 ◽  
Vol 28 (13) ◽  
pp. 1450100
Author(s):  
Dil Nawaz Khan ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Muhammad Tahir ◽  
Muhammad Yaseen ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Series Resistance ◽  
Electrical Characterization ◽  
Heterojunction Diode ◽  
Zero Bias ◽  
Current Voltage ◽  
Temperature Dependant ◽  
Increasing Temperature ◽  
P Type

This paper reports the temperature dependent electrical characterization of formyl- TIPPCu (II)/p- Si heterojunction diode which was fabricated by growing thin films of formyl- TIPPCu (II) on the p-type silicon substrate by thermal sublimation technique. The variation in electrical characteristics of the fabricated devices has been systematically investigated as the function of temperature by using current–voltage (I–V) measurements in the temperature range 299–339 K. The diode parameters like ideality factor, zero bias barrier height and parasitic series resistance have been found to be strongly temperature dependant. The zero bias barrier height increases while ideality factor and series resistance decreases with increasing temperature.

scholarly journals Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

Micromachines ◽  
2018 ◽  
Vol 9 (8) ◽  
pp. 412 ◽  
Author(s):  
Evans Bernardin ◽  
Christopher Frewin ◽  
Richard Everly ◽  
Jawad Ul Hassan ◽  
Stephen Saddow
Keyword(s):  
Silicon Carbide ◽  
High Performance ◽  
Electrical Characterization ◽  
Electrode Impedance ◽  
Voltage Range ◽  
Promising Solution ◽  
Multiple Materials ◽  
Diode Behavior ◽  
Materials Used ◽  
P Type

Intracortical neural interfaces (INI) have made impressive progress in recent years but still display questionable long-term reliability. Here, we report on the development and characterization of highly resilient monolithic silicon carbide (SiC) neural devices. SiC is a physically robust, biocompatible, and chemically inert semiconductor. The device support was micromachined from p-type SiC with conductors created from n-type SiC, simultaneously providing electrical isolation through the resulting p-n junction. Electrodes possessed geometric surface area (GSA) varying from 496 to 500 K μm2. Electrical characterization showed high-performance p-n diode behavior, with typical turn-on voltages of ~2.3 V and reverse bias leakage below 1 nArms. Current leakage between adjacent electrodes was ~7.5 nArms over a voltage range of −50 V to 50 V. The devices interacted electrochemically with a purely capacitive relationship at frequencies less than 10 kHz. Electrode impedance ranged from 675 ± 130 kΩ (GSA = 496 µm2) to 46.5 ± 4.80 kΩ (GSA = 500 K µm2). Since the all-SiC devices rely on the integration of only robust and highly compatible SiC material, they offer a promising solution to probe delamination and biological rejection associated with the use of multiple materials used in many current INI devices.

scholarly journals Effect of Zinc Oxide on the Efficiency Enhancement of Al/Li2O/PSi/Si/Al solar cell

2021 ◽  
Author(s):  
Shahlaa M. Abd Al-Hussan ◽  
Nabeel A. Bakr ◽  
Ahmed N. Abd
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Zinc Oxide ◽  
Porous Silicon ◽  
Lithium Oxide ◽  
Precipitation Method ◽  
Oxide Nanoparticles ◽  
Casting Method ◽  
P Type ◽  
Scanning Electron

Abstract In this paper, electrochemical etching of the p-type silicon wafer is used to prepare p-type porous silicon with current density of 10 mA.cm− 2 for 10 minutes. Field Emission Scanning Electron Microscopy (FESEM) has been used to study porous silicon layer surface morphology. Zinc oxide and lithium oxide nanoparticles are prepared separately by chemical precipitation method and simple precipitation method, respectively and deposited on glass substrates by drop casting method. Moreover,, the structural properties of the films were analyzed by using XRD and SEM. The XRD results showed that the ZnO and Li2O films are polycrystalline with hexagonal wurtzite structure and cubic structure, and preferred orientation along (101) and (003) planes, respectively. Using Scherrer's formula, the crystallite size was measured and it was found that ZnO and Li2O thin films have a crystallite size of 22.04 and 45.6 nm respectively. Surface topography of the prepared thin films is studied by using Scanning Electron Microscopy (SEM). Later, certain proportions of both materials were mixed and deposited on porous silicon using drop casting method at thickness of 1.4 µm. After that, the characteristics of the solar cell were investigated. Mixing zinc oxide nanoparticles in particular proportions with lithium oxide played a major role in increasing the solar cell's performance. The highest prepared film efficiency was obtained at mixing ratio (0.5: 0.5) for (ZnO: Li2O) and its value was (11.09 %).

Gaussian distribution of Schottky barrier heights on SnO2 nanowires

2011 ◽  
Vol 1406 ◽  
Author(s):  
Cleber A. Amorim ◽  
Olivia M. Berengue ◽  
Luana Araújo ◽  
Edson R. Leite ◽  
Adenilson J. Chiquito
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Series Resistance ◽  
Small Deviation ◽  
Thermionic Emission ◽  
Barrier Heights ◽  
Sno2 Nanowires ◽  
Different Temperatures

ABSTRACTIn this work, we studied metal/SnO2 junctions using transport properties. Parameters such as barrier height, ideality factor and series resistance were estimated at different temperatures. Schottky barrier height showed a small deviation of the theoretical value mainly because the barrier was considered fixed as described by ideal thermionic emission-diffusion model. These deviations have been explained by assuming the presence of barrier height inhomogeneities. Such assumption can also explain the high ideality factor as well as the Schottky barrier height and ideality factor dependence on temperature.

Temperature Dependent Current-Voltage Characteristics of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions

2015 ◽  
Vol 1120-1121 ◽  
pp. 435-439
Author(s):  
Nathaporn Promros ◽  
Dalin Prajakkan ◽  
Nantharat Hongsa ◽  
Nattanee Suthayanan ◽  
Phongsaphak Sittimart ◽  
...  
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Series Resistance ◽  
Linear Part ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Current Voltage ◽  
Saturation Current Density ◽  
Current Voltage Characteristics ◽  
P Type

In this work, n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions were prepared by facing-targets direct-current sputtering. We measured their current-voltage characteristics at low temperatures ranging from 300 K down to 50 K and investigated their ideality factor, saturation current and series resistance using thermionic emission theory and Cheung’s method. From thermionic emission theory, the ideality factor and saturation current density were calculated from the slope of the linear part from the forward lnJ-V and the straight line intercept of lnJ-V at zero voltage, respectively. When the temperature decreased from 300 K down to 50 K, the ideality factor increased from 1.12 to 11.13, whereas the saturation current density decreased from 2.09 × 10-6 A/cm2 to 1.06 × 10-9 A/cm2. Using Cheung’s method, we plotted the relations of dV/d(lnJ)-J and H(J)-J in order to estimate the series resistance from the slope of both plots. In addition, we estimated the ideality factor from a y-axis intercept of the dV/d(lnJ)-J plot. The series resistances from both plots were consistent with each other and increased with the decreasing temperature. The ideality factor estimated by Cheung’s method was in agreement with that obtained from estimation by thermionic emission theory.

scholarly journals AgSn[Bi1−xSbx]Se3: Synthesis, Structural Characterization, and Electrical Behavior

Crystals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 864
Author(s):  
Paulina Valencia-Gálvez ◽  
Daniela Delgado ◽  
María Luisa López ◽  
Inmaculada Álvarez-Serrano ◽  
Silvana Moris ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Seebeck Coefficient ◽  
X Ray ◽  
Average Value ◽  
Transmission Electron ◽  
Semiconductor Behavior ◽  
Type Semiconductor ◽  
Diffraction Patterns ◽  
Increasing Temperature ◽  
P Type

Herein, we report the synthesis, characterization, and electrical properties of lead-free AgSnm[Bi1−xSbx]Se2+m (m = 1, 2) selenides. Powder X-ray diffraction patterns and Rietveld refinement data revealed that these selenides consisted of phases related to NaCl-type crystal structure. The microstructures and morphologies of the selenides were investigated by backscattered scanning electron microscopy, energy-dispersive X-ray spectroscopy, and high-resolution transmission electron microscopy. The studied AgSnm[Bi1−xSbx]Se2+m systems exhibited typical p-type semiconductor behavior with a carrier concentration of approximately ~+1020 cm−3. The electrical conductivity of AgSnm[Bi1−xSbx]Se2+m decreased from ~3.0 to ~10−3 S·cm−1 at room temperature (RT) with an increase in m from 1 to 2, and the Seebeck coefficient increased almost linearly with increasing temperature. Furthermore, the Seebeck coefficient of AgSn[Bi1−xSbx]Se3 increased from ~+36 to +50 μV·K−1 with increasing Sb content (x) at RT, while its average value determined for AgSn2[Bi1−xSbx]Se4 was approximately ~+4.5 μV·K−1.

scholarly journals A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization

2021 ◽  
Vol 12 ◽  
pp. 984-994
Author(s):  
Adem Koçyiğit ◽  
Adem Sarılmaz ◽  
Teoman Öztürk ◽  
Faruk Ozel ◽  
Murat Yıldırım
Keyword(s):  
Electron Microscopy ◽  
Interfacial Layer ◽  
High Efficiency ◽  
Series Resistance ◽  
Morphological Characterization ◽  
Shunt Resistance ◽  
X Ray ◽  
Transmission Electron ◽  
Hot Injection ◽  
P Type

In this present work, CuNiCoS4 thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the successful synthesis of CuNiCoS4. The obtained CuNiCoS4 thiospinel nanocrystals were tested for photodiode and capacitance applications as interfacial layer between Au and p-type Si by measuring I–V and C–V characteristics. The fabricated Au/CuNiCoS4/p-Si device exhibited good rectifying properties, high photoresponse activity, low series resistance, and high shunt resistance. The C–V characteristics revealed that capacitance and conductance of the photodiode are voltage-and frequency-dependent. The fabricated device with CuNiCoS4 thiospinel nanocrystals can be employed in high-efficiency optoelectronic applications.

scholarly journals Study of the Electrical Properties of Porous Silicon Prepared by Electrochemical Etching Technique

2019 ◽  
Vol 54 (5) ◽  
Author(s):  
Warood Kream Alaarage ◽  
Luma Hafedh Abed Oneiza ◽  
Mohanad Ghulam Murad Alzubaidi
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Ideality Factor ◽  
Thermal Emission ◽  
Electrochemical Etching ◽  
Point Of View ◽  
Etching Technique ◽  
Force Microscopy ◽  
Atomic Force ◽  
P Type

In our work, a P-type porous silicon (PSi) with orientation (100) have been prepared using the chemical etching method; the goal is to study the electrical properties of PSi samples prepared with completely different etching current (7, 9, 11 and 13) mA and glued for (15 min) anodization time. Depending on the atomic force microscopy (AFM) investigation, we notice the roughness of Si surface increases with increasing etching current because of increases within the dimension (diameter) of surface pits. The electrical and optoelectronic properties of prepared PSi, specifically capacitance-voltage (C-V), current-voltage (I-V), responsivity and detectivity, are analyzed. It had been found that electrical characteristics of porous Si samples measured in dark (Id) and below illumination (IPh) will be fitted well by the equations of thermal emission. From this point of view, Schottky barrier height (ɸB) and ideality factor (n) of made-up photodetectors were calculated. We tended to determine from I-V characteristics of a dark, and illuminations that the pass current through the PSi layer reduced by increasing the etching current, as a result of increasing the electrical resistance of PSi layer and therefore the optimum value of ideality factor is (2.7), whereas from C-V characteristic we determined that in-built potential accumulated with increasing etching current. The results show that there are clear results for better performance of photodetectors.

Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

2013 ◽  
Vol 313-314 ◽  
pp. 270-274
Author(s):  
M. Faisal ◽  
M. Asghar ◽  
Khalid Mahmood ◽  
Magnus Willander ◽  
O. Nur ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Doping Concentration ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Increasing Temperature

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.

Synthesis and Electrical Characterization of Tin Oxide Nanostructures

2009 ◽  
Vol 1178 ◽  
Author(s):  
Olivia Maria Berengue ◽  
Cleocir J. Dalmaschio ◽  
Tiago G. Conti ◽  
Adenilson J. Chiquito ◽  
Edson R. Leite
Keyword(s):  
Electron Microscopy ◽  
Electrical Characterization ◽  
Morphological Characterization ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Current Voltage ◽  
Different Temperatures ◽  
Light Excitation ◽  
Resistance Curves

AbstractSn3O4 nanobelts were grown by a carbothermal evaporation process of SnO2 powders in association with the well known vapour-solid mechanism (VS). The nanobelts crystal structure was investigated by x-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), raman spectroscopy and field emission gun scanning electron microscopy (FEG-SEM). The structural and morphological characterization has confirmed the growth of single crystal nanobelts. The electrical characterization (current-voltage, temperature-dependent resistance curves) of individual Sn3O4 nanobelts was performed at different temperatures and light excitation. The experiments revealed a semiconductor – like character as evidenced by the resistance decreasing at high temperatures. The transport mechanism was identified as the variable range hopping.

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