Electronic structure modification in Fe substituted β-Ga2O3 from resonant photoemission and soft x-ray absotption spectroscopies

2021 ◽  
Author(s):  
Sahadeb Ghosh ◽  
Mangala Nand ◽  
Rajiv Kamparath ◽  
Mukul Gupta ◽  
Devdatta M Phase ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
Binding Energies ◽  
Transfer System ◽  
Structure Modification ◽  
X Ray ◽  
Resonant Photoemission ◽  
A Charge ◽  
Fe Substitution

Abstract Oriented thin films of β-(Ga1-xFex)2O3 have been deposited by RF magnetron sputtering on c-Al2O3 and GaN substrates. The itinerant character of Fe 3d states forming the top of the valence band (VB) of Fe substituted of β-Ga2O3 thin films has been determined from resonant photoelectron spectroscopy (RPES). Further, admixture of itinerant and localized character of these Fe 3d sates is obtained for larger binding energies i.e deeper of VB. The bottom of the conduction band (CB) for β-(Ga1-xFex)2O3 is also found to be strongly hybridized states involving Fe 3d and O 2p states as compared to that of Ga 4s in pristine β-Ga2O3. This suggests that β-Ga2O3 transforms from band like system to a charge transfer system with Fe substitution. Furthermore, the bandgap red shits with Fe composition, which has been found to be primarily related to the shift of the CB edge.

The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Gauge Factor ◽  
X Ray ◽  
Sputtering Power

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

scholarly journals Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Bong Ju Lee ◽  
Ho Jun Song ◽  
Jin Jeong
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Photoelectron Spectra ◽  
Gas Flow Rate ◽  
X Ray ◽  
Oxide Component

Al-doped zinc-oxide (AZO) thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. The charge-carrier concentrations in the films decreased from 1.69 × 1021to 6.16 × 1017 cm−3with increased gas flow rate from 7 to 21 sccm. The X-ray diffraction (XRD) patterns show that the (002)/(103) peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. X-ray photoelectron spectra (XPS) of the O1s were decomposed into metal oxide component (peak A) and the adsorbed molecular oxygen on thin films (peak B). The area ratio of XPS peaks (A/B) was clearly related to the stoichiometry of AZO films; that is, the higher value of A/B showed the higher stoichiometric properties.

scholarly journals Deposit of AlN thin films by nitrogen reactive pulsed laser ablation using an Al target

2019 ◽  
Vol 65 (4 Jul-Aug) ◽  
pp. 345 ◽  
Author(s):  
F. Chale-Lara ◽  
M. Zapata-Torres ◽  
F. Caballero-Briones ◽  
W. De la Cruz ◽  
N. Cruz Gonzalez ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Photoelectron Spectroscopy ◽  
Hexagonal Phase ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Nitrogen Pressure ◽  
Binding Energies ◽  
Xps Spectra ◽  
X Ray

We report the synthesis of AlN hexagonal thin films by pulsed laser ablation, using Al target in nitrogen ambient over natively-oxidized Si (111) at 600°C. Composition and chemical state were determined by X-ray photoelectron spectroscopy (XPS); while structural properties were investigated using X-ray diffraction (XRD). High-resolution XPS spectra present a gradual shift to higher binding energies on the Al2ppeak when nitrogen pressure is incremented, indicating the formation of the AlN compound. At 30 mTorr nitrogen pressure, theAl2p peak corresponds to AlN, located at 73.1 eV, and the XRD pattern shows a hexagonal phase of AlN. The successful formation of the AlN compound is corroborated by UV-Vis reflectivity measurements.

Properties of Indium Tin Oxide Films Prepared by RF Magnetron Sputtering at Different Substrate Temperatures

2012 ◽  
Vol 502 ◽  
pp. 77-81
Author(s):  
Z.Y. Zhong ◽  
J.H. Gu ◽  
X. He ◽  
C.Y. Yang ◽  
J. Hou
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Ito Thin Films

Indium tin oxide (ITO) thin films were deposited by RF magnetron sputtering on glass substrates employing a sintered ceramic target. The influence of substrate temperature on the structural, compositional, optical and electrical properties of the thin films were investigated by X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), spectrophotometer and four-point probes. All the ITO thin films show a polycrystalline indium oxide structure and have a preferred orientation along the (222) direction. The substrate temperature significantly affects the crystal structure and optoelectrical properties of the thin films. With the increment of substrate temperature, the electrical resistivity of the deposited films decreases, the crystallite dimension, optical bandgap and average transmittance in the visible region increase. The ITO thin film deposited at substrate temperature of 200 °C possesses the best synthetic optoelectrical properties, with the highest transmittance, the lowest resistivity and the highest figure of merit.

The Influence of O2/Ar on the Dielectric Properties of Bismuth Zinc Niobate Titanium Thin Films Prepared by RF Magnetron Sputtering

2012 ◽  
Vol 252 ◽  
pp. 202-206
Author(s):  
Xiao Hua Sun ◽  
Zhi Meng Luo ◽  
Shuang Hou ◽  
Cai Hua Huang ◽  
Jun Zou
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Si Substrates ◽  
Low Dielectric ◽  
Metal Insulator Metal ◽  
Titanium Thin Films

BZNT (Bi1.5Zn0.5Nb0.5Ti1.5O7) thin films were prepared on Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering in different O2/Ar ranging from 4:16 to 7:13. The structure and surface morphology of BZNT thin films were investigated by x-ray diffraction (XRD) and atom force microscopy (AFM). The analysis of component in BZNT films were carried out by x-ray photoelectron spectroscopy (XPS). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz. It’s found that the O2/Ar ratios significantly influence the elements content in BZNT thin films and the morphology and dielectric properties of BZNT thin films. At 1M Hz, the dielectric constant of BZNT thin films deposited at O2/Ar ranging from 4:16 to 7:13 is 212, 187, 171, 196, respectively. The BZNT thin film prepared at O2/Ar = 6:14 shows the highest figure of merit for its very low dielectric loss of 0.0024.

scholarly journals Enhancement of Electrical Property of Carbon Nanotube by Silicon Incorporation

2020 ◽  
Vol 10 (1) ◽  
pp. 62-65
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Binding Energies ◽  
Xps Spectra ◽  
X Ray ◽  
Conductivity Increase ◽  
Vapor Deposition Technique ◽  
Si Content

Silicon incorporated carbon nano tube has been synthesized by radio frequency plasma enhanced chemical vapor deposition technique with acetylene gas. Tetraethyl orthosilicate solution was used for the synthesis of silicon incorporation in the CNT thin films. Energy dispersive X-ray analysis shows that the Si atomic percentage in the CNT thin films varied from 0 % to 3.82 %. The different chemical binding energies of carbon and silicon were analyzed from X-ray photoelectron spectroscopy spectra. In the XPS spectra, the peaks at ~531 eV, ~ 285 eV, ~151 eV and ~100 eV are the contributions from O 1s, C 1s, Si 2s and Si 2p respectively. Nanostructure morphologies of the Si-CNT thin films have been analyzed by field emission scanning electron microscopy. The length of the silicon incorporated carbon nano tubes ~100 nm and corresponding diameter ~20 nm. The increase of atomic percentage of Si in the CNT thin films, room temperature electrical conductivity increases. The electrical conductivity increase from 3.87x103 to 4.49x104 S cm-1 as the silicon atomic percentage in the CNT thin films increases from 0 to 3.82 % respectively. This study showed that the Si-CNTs thin films potentially useful in electrical application of varying its conductivity by changing the Si content independently from other parameters

Tungsten nitride thin films prepared by MOCVD

1993 ◽  
Vol 8 (6) ◽  
pp. 1353-1360 ◽  
Author(s):  
Hsin-Tien Chiu ◽  
Shiow-Huey Chuang
Keyword(s):  
Thin Films ◽  
Mass Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Lattice Parameter ◽  
Binding Energies ◽  
Organic Chemical ◽  
Elemental Distribution ◽  
Tungsten Nitride ◽  
Wavelength Dispersive Spectroscopy ◽  
X Ray

Polycrystalline tungsten nitride thin films were grown by low pressure metallo-organic chemical vapor deposition (MOCVD) using (tBuN)2W(NHtBu)2 as the single-source precursor. Deposition of uniform thin films on glass and silicon substrates was carried out at temperatures 723–923 K in a cold-wall reactor, while the precursor was vaporized at 333–363 K. The growth rates were 2–10 nm/min depending on the condition employed. Bulk elemental composition of the thin films, studied by wavelength dispersive spectroscopy (WDS), is best described as WNx (x = 0.7–1.8). The N/W ratio decreased with increasing temperature of deposition. X-ray diffraction (XRD) studies showed that the films have cubic structures with the lattice parameter a = 0.414–0.418 nm. The lattice parameter decreased with decreasing N/W ratio. Stoichiometric WN thin films showed an average lattice parameter a of 0.4154 nm. X-ray photoelectron spectroscopy (XPS) showed that binding energies of the W4f7/2, W4f5/2, and N1s electrons were 33.0, 35.0, and 397.3 eV, respectively. Elemental distribution within the films, studied by secondary ion mass spectroscopy (SIMS) and Auger spectroscopy depth profilings, was uniform. The SIMS depth profiling also indicated that C and O concentrations were low in the film. Volatile products trapped at 77 K were analyzed by gas chromatography–mass spectroscopy (GC–MS) and nuclear magnetic resonance (NMR). Isobutylene, acetonitrile, hydrogen cyanide, and ammonia were detected in the condensable mixtures. Possible reaction pathways were proposed to speculate the origin of these molecules.

scholarly journals Analysis of Metal-Insulator Crossover in Strained SrRuO3 Thin Films by X-ray Photoelectron Spectroscopy

Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 780
Author(s):  
Andrea Nardi ◽  
Chiara Bigi ◽  
Sandeep Kumar Chaluvadi ◽  
Regina Ciancio ◽  
Jun Fujii ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Compressive Strain ◽  
Binding Energies ◽  
Perovskite Oxide ◽  
Strontium Ruthenate ◽  
Metal Insulator ◽  
X Ray ◽  
Epitaxial Strain ◽  
Extra Peak

The electronic properties of strontium ruthenate SrRuO3 perovskite oxide thin films are modified by epitaxial strain, as determined by growing on different substrates by pulsed laser deposition. Temperature dependence of the transport properties indicates that tensile strain deformation of the SrRuO3 unit cell reduces the metallicity of the material as well as its metal-insulator-transition (MIT) temperature. On the contrary, the shrinkage of the Ru–O–Ru buckling angle due to compressive strain is counterweighted by the increased overlap of the conduction Ru-4d orbitals with the O-2p ones due to the smaller interatomic distances resulting into an increased MIT temperature, i.e., a more conducting material. In particular, in the more metallic samples, the core level X-ray photoemission spectroscopy lineshapes show the occurrence of an extra-peak at the lower binding energies of the main Ru-3d peak that is attributed to screening, as observed in volume sensitive photoemission of the unstrained material.

X-ray photoelectron spectroscopy of Cu–In–Se–N and Cu–In–Se thin films

1992 ◽  
Vol 7 (8) ◽  
pp. 1984-1986 ◽  
Author(s):  
Shigemi Kohiki ◽  
Mikihiko Nishitani ◽  
Takayuki Negami ◽  
Takahiro Wada
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Binding Energies ◽  
Core Electron ◽  
X Ray ◽  
The Core ◽  
Bonding Interaction ◽  
Electron Binding Energies ◽  
Electron Binding

The Cu, In, and Se core-level electron binding energies of the p-type Cu–In–Se–N thin film were larger than those of the n-type Cu–In–Se thin film. The positive shift of the core-electron binding energies for the Cu–In–Se–N film is consistent with that expected from the conduction types of the films. Holes were positioned in the Cu–Se antibonding orbitals of the Cu–In–Se–N film. The analysis using the Auger parameter revealed that the Cu–Se bonding interaction is stronger for the Cu–In–Se–N film than for the Cu–In–Se film.

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