scholarly journals Corrigendum to “Investigation of Stereometric and Fractal Patterns of Spin-Coated LuMnO3 Thin Films”

2021 ◽  
Vol 2021 ◽  
pp. 1-1
Author(s):  
Igor Hernandes Gomes Marques ◽  
Robert Saraiva Matos ◽  
Yonny Romaguera-Barcelay ◽  
Ştefan Ţălu ◽  
J. Agostinho Moreira ◽  
...  
Keyword(s):  
Thin Films ◽  
Fractal Patterns

Observation of fractal patterns in C60-polymer thin films

1994 ◽  
Vol 9 (9) ◽  
pp. 2216-2218 ◽  
Author(s):  
H.J. Gao ◽  
Z.Q. Xue ◽  
Q.D. Wu ◽  
S. Pang
Keyword(s):  
Thin Films ◽  
Fractal Dimension ◽  
Long Range ◽  
Diffusion Limited Aggregation ◽  
Aggregation Model ◽  
Diffusion Limited ◽  
Range Correlation ◽  
Microscopic Features ◽  
Fractal Patterns ◽  
Cluster Diffusion

We report the observation of fractal patterns in C60-tetracyanoquinodimethane thin films. The fractal patterns and their microscopic features are described and characterized. The fractal dimension was determined to be 1.69 ± 0.07. According to the characterization results, the observed fractals are compared to the cluster-diffusion-limited-aggregation model. The growth of the fractal patterns in the thin films is also in terms of the existing long-range correlation.

scholarly journals Investigation of Stereometric and Fractal Patterns of Spin-Coated LuMnO3 Thin Films

2021 ◽  
Vol 2021 ◽  
pp. 1-11
Author(s):  
Igor Hernandes Gomes Marques ◽  
Robert Saraiva Matos ◽  
Yonny Romaguera-Barcelay ◽  
Ştefan Ţălu ◽  
Joaquim Agostinho Moreira ◽  
...  
Keyword(s):  
Thin Films ◽  
Spatial Patterns ◽  
Three Dimensional ◽  
Root Mean Square Roughness ◽  
Height Distribution ◽  
Si Substrates ◽  
Spatial Frequencies ◽  
Fractal Parameters ◽  
Fractal Patterns ◽  
Processing Techniques

In this paper, we have performed qualitative and quantitative analysis of LuMnO3 thin films surfaces, deposited by spin coating over Pt(111)/TiO2/SiO2/Si substrates, to evaluate their spatial patterns as a function of the film’s sintering temperature. Atomic force microscopy was employed to obtain topographic maps that were extensively analyzed via image processing techniques and mathematical tools. 3D (three-dimensional) topographical images revealed that films sintered at 650°C and 750°C presented the formation of smoother surfaces, while the film sintered at 850°C displayed a rougher surface with a root mean square roughness of ∼2.5 nm. On the other direction, the height distribution of the surface for all films has similar asymmetries and shape, although the film sintered using the highest temperature showed the lower density of rough peaks and a sharper peak shape. The advanced fractal parameters revealed that the film sintered at 850°C is dominated by low spatial frequencies, showing less spatial complexity, higher microtexture homogeneity, and uniform height distribution. These results suggest that the combination of stereometric and fractal parameters can be especially useful for identification of unique topographic spatial patterns in LuMnO3 thin films, helping in their implementation in technological applications, such as photovoltaic solar cells and information magnetic date storage and spintronic devices.

Chiral Fractal Patterns of TCNQ Thin Films Grown by Vacuum Evaporation

2000 ◽  
Vol 16 (07) ◽  
pp. 579-582
Author(s):  
Li Jian-Chang ◽  
◽  
Xue Zeng-Quan ◽  
Zhang Hao ◽  
Zeng Yan ◽  
...  
Keyword(s):  
Thin Films ◽  
Vacuum Evaporation ◽  
Fractal Patterns

Growth of the fractal patterns in Ni‐Zr thin films during ion‐solid interaction

1988 ◽  
Vol 63 (8) ◽  
pp. 2879-2881 ◽  
Author(s):  
L. J. Huang ◽  
J. R. Ding ◽  
H‐D. Li ◽  
B. X. Liu
Keyword(s):  
Thin Films ◽  
Fractal Patterns

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

A standard for transmission electron spectroscopy

1978 ◽  
Vol 36 (1) ◽  
pp. 530-531 ◽  
Author(s):  
Dennis Maher ◽  
David Joy ◽  
Peggy Mochel
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Host Lattice ◽  
Single Element ◽  
Multicomponent Systems ◽  
Transmission Electron ◽  
Major Interest ◽  
Standard Specimens ◽  
Forms Of Carbon ◽  
Electron Energy Loss

A variety of standard specimens is needed in order to systematically investigate the instrumentation, specimen, data reduction and quantitation variables in electron energy-loss spectroscopy (EELS). Pure single element specimens (e.g. various forms of carbon) have received considerable attention to date but certain elements of interest cannot be prepared directly as thin films. Since studies of the first and second row elements in two- or multicomponent systems will be of considerable importance in microanalysis using EELS, there is a need for convenient standards containing these species. For many investigations a standard should contain the desired element, or elements, homogeneously dispersed through a suitable matrix and at an accurately known concentration. These conditions may be met by the technique of implantation.Silicon was chosen as the host lattice since its principal ionization energies, EL23 = 98 eV and Ek = 1843 eV, are well removed from the K-edges of most elements of major interest such as boron (Ek = 188 eV), carbon (Ek = 283 eV), nitrogen (Ek = 400 eV) and oxygen (Ek = 532 eV).

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