scholarly journals Design and simulation of high-swing fully differential telescopic Op-Amp

2021 ◽  
Vol 2 (2) ◽  
pp. 49-57
Author(s):  
Zahra Pezeshki
Keyword(s):  
Power Supply ◽  
Common Source ◽  
High Frequencies ◽  
Fully Differential ◽  
Op Amp ◽  
Op Amps ◽  
Common Gate ◽  
High Cmrr ◽  
The Common ◽  
Very High

This article describes the process of design and simulation of a high-swing fully differential telescopic Operational Amplifier (Op-Amp). Due to the Common Gate-Common Source (CG and CS) cascode structure, the gain is very high. To maximize this gain, the load must also be selected such as two current sources. This circuit has the higher voltage in output than current Op-Amps in accordance with desirable characteristics. The loss of power of this operating amplifier are very low and in milliwatts. With use of a power supply of 1.8 V, it achieves a high-swing 1.2 V, a differential gain of 76.333 dB, ω_uGB of 412 MHz, and 50 dB CMRR. This new design through the simulations and analytically shows that the high-swing fully differential telescopic Op-Amp retains its high CMRR even at high frequencies.

Extended Characterization of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

2014 ◽  
Vol 157 (1) ◽  
pp. 71-80
Author(s):  
Mitchell R. Hunt ◽  
Rana Sayyah ◽  
Cody Mitchell ◽  
Crystal L. McCartney ◽  
Todd C. Macleod ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Common Source ◽  
Common Gate ◽  
The Common ◽  
Effect Transistor

scholarly journals Design of Common-gate with Common-source Active Balun for WiMAX Receiver Front-end

2019 ◽  
pp. 1-9
Author(s):  
Frederick Ray I. Gomez ◽  
Maria Theresa G. De Leon ◽  
John Richard E. Hizon
Keyword(s):  
Phase Difference ◽  
Noise Figure ◽  
Supply Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Common Source ◽  
Cmos Process ◽  
Common Gate ◽  
Active Balun ◽  
The Common

This paper presents a design and simulation study of a common-gate with common-source active balun circuit implemented in a standard 90-nm complementary metal-oxide semiconductor (CMOS) process.  The active balun design is intended for worldwide interoperability for microwave access (WiMAX) application, with operating frequency of 5.8 GHz and supply voltage of 1 V.  Measurements are taken for parameters namely gain difference, phase difference, and noise figure.  The common-source active balun design achieved a minimal gain difference of  0.04 dB, phase difference of 180 ± 1.5 degrees, and noise figure of 8.76 dB, which are comparable to past active balun designs and researches.  The design eventually achieved a low power consumption of 4.45 mW.

Mathematical Models of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

2014 ◽  
Vol 157 (1) ◽  
pp. 81-88
Author(s):  
Mitchell R. Hunt ◽  
Rana Sayyah ◽  
Cody Mitchell ◽  
Crystal L. McCartney ◽  
Todd C. Macleod ◽  
...  
Keyword(s):  
Mathematical Models ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Common Source ◽  
Common Gate ◽  
The Common ◽  
Effect Transistor

Silicon Interposers Enable High Performance Capacitors

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 001996-002010
Author(s):  
Sergey Savastiouk ◽  
Phil Marcoux ◽  
Jim Hewlett
Keyword(s):  
Thin Film ◽  
Power Supply ◽  
High Performance ◽  
Electrical Performance ◽  
High Frequencies ◽  
Embedded Capacitors ◽  
Thin Film Capacitors ◽  
Parallel Resonance ◽  
Very High Frequencies ◽  
Very High

Thin film capacitors without TSVs have been used previously. However, with the interconnect inductance being high, benefits of thin film capacitors have not been fully realized. TSV interposers with embedded capacitors provide the shortest electrical path between devices and power supply decoupling capacitors. TSVs with their very low inductance interconnects thus will enable very high electrical performance when integrated with embedded thin film capacitors. ALLVIA, on behalf of it's foundry customers, has been conducting studies of various capacitors on silicon interposers. The data presented in this paper shows after several thermal cycles that planar capacitors on silicon results in stable, reliable capacitors operating at very high frequencies. Unlike an issue of parallel resonance seen with chip capacitors, planar capacitors in interposers don't exhibit this property.

scholarly journals A Novel Fully Differential Second Generation Current Conveyor and Its Application as a Very High CMRR Instrumentation Amplifier

2018 ◽  
Vol 2 (2) ◽  
Author(s):  
Soma Ahmadi ◽  
Seyed Javad Azhari
Keyword(s):  
Second Generation ◽  
Current Mode ◽  
Cmos Technology ◽  
Current Conveyor ◽  
Instrumentation Amplifier ◽  
Intrinsic Resistance ◽  
Common Mode ◽  
Fully Differential ◽  
High Cmrr ◽  
Very High

This paper aims to introduce a novel Fully Differential second generation Current Conveyor (FDCCII) and its application to design a novel Low Power (LP), very high CMRR, and wide bandwidth (BW) Current Mode Instrumentation Amplifier (CMIA). In the proposed application, CMRR, as the most important feature, has been greatly improved by using both common mode feed forward (CMFF) and common mode feedback (CMFB) techniques, which are verified by a perfect circuit analysis. As another unique quality, it neither needs well-matched active blocks nor matched resistors but inherently improves CMRR, BW, and power consumption hence gains an excellent matchless choice for integration. The FDCCII has been designed using 0.18 um TSMC CMOS Technology with ±1.2 V supply voltages. The simulation of the proposed FDCCII and CMIA have been done in HSPICE LEVEL 49. Simulation results for the proposed CMIA are as follow: Voltage CMRR of 216 dB, voltage CMRR BW of 300 Hz. Intrinsic resistance of X-terminals is only 45 Ω and the power dissipation is 383.4 μW.  Most favourably, it shows a constant differential voltage gain BW of 18.1 MHz for variable gains (here ranging from 0 dB to 45.7 dB for example) removing the bottleneck of constant gain-BW product of Voltage mode circuits.

Improvement of Gain Accuracy and CMRR of Low Power Instrumentation Amplifier Using High Gain Operational Amplifiers

2020 ◽  
Vol 12 (3) ◽  
pp. 168-174
Author(s):  
Rashmi Sahu ◽  
Maitraiyee Konar ◽  
Sudip Kundu
Keyword(s):  
Low Power ◽  
Building Blocks ◽  
High Gain ◽  
The Other ◽  
Operational Amplifiers ◽  
Instrumentation Amplifier ◽  
Biomedical Signals ◽  
Op Amp ◽  
Op Amps ◽  
Multi Stage

Background: Sensing of biomedical signals is crucial for monitoring of various health conditions. These signals have a very low amplitude (in μV) and a small frequency range (<500 Hz). In the presence of various common-mode interferences, biomedical signals are difficult to detect. Instrumentation amplifiers (INAs) are usually preferred to detect these signals due to their high commonmode rejection ratio (CMRR). Gain accuracy and CMRR are two important parameters associated with any INA. This article, therefore, focuses on the improvement of the gain accuracy and CMRR of a low power INA topology. Objective: The objective of this article is to achieve high gain accuracy and CMRR of low power INA by having high gain operational amplifiers (Op-Amps), which are the building blocks of the INAs. Methods: For the implementation of the Op-Amps and the INAs, the Cadence Virtuoso tool was used. All the designs and implementation were realized in 0.18 μm CMOS technology. Results: Three different Op-Amp topologies namely single-stage differential Op-Amp, folded cascode Op-Amp, and multi-stage Op-Amp were implemented. Using these Op-Amp topologies separately, three Op-Amp-based INAs were realized and compared. The INA designed using the high gain multistage Op-Amp topology of low-frequency gain of 123.89 dB achieves a CMRR of 164.1 dB, with the INA’s gain accuracy as good as 99%, which is the best when compared to the other two INAs realized using the other two Op-Amp topologies implemented. Conclusion: Using very high gain Op-Amps as the building blocks of the INA improves the gain accuracy of the INA and enhances the CMRR of the INA. The three Op-Amp-based INA designed with the multi-stage Op-Amps shows state-of-the-art characteristics as its gain accuracy is 99% and CMRR is as high as 164.1 dB. The power consumed by this INA is 29.25 μW by operating on a power supply of ±0.9V. This makes this INA highly suitable for low power measurement applications.

scholarly journals Common issues in the hetero-epitaxial seeding on SiC substrates in the sublimation growth of AlN crystals

2021 ◽  
Vol 127 (8) ◽  
Author(s):  
R. Radhakrishnan Sumathi
Keyword(s):  
Power Electronic ◽  
Etch Pit ◽  
Micro Hole ◽  
Wet Chemical ◽  
The Common ◽  
Common Problems ◽  
Hole Defects ◽  
Sublimation Growth ◽  
Impurity Elements ◽  
Very High

AbstractAluminium nitride (AlN) is a futuristic material for efficient next-generation high-power electronic and optoelectronic applications. Sublimation growth of AlN single crystals with hetero-epitaxial approach using silicon carbide substrates is one of the two prominent approaches emerged, since the pioneering crystal growth work from 1970s. Many groups working on this hetero-epitaxial seeding have abandoned AlN growth altogether due to lot of persistently encountered problems. In this article, we focus on most of the common problems encountered in this process such as macro- and micro-hole defects, cracks, 3D-nucleation, high dislocation density, and incorporation of unintentional impurity elements due to chemical decomposition of the substrate at very high temperatures. Possible ways to successfully solve some of these issues have been discussed. Other few remaining challenges, namely low-angle grain boundaries and deep UV optical absorption, are also presented in the later part of this work. Particular attention has been devoted in this work on the coloration of the crystals with respect to chemical composition. Wet chemical etching gives etch pit density (EPD) values in the order of 105 cm-2 for yellow-coloured samples, while greenish coloration deteriorates the structural properties with EPD values of at least one order more.

VERY HIGH-ORDER SPATIALLY IMPLICIT SCHEMES FOR COMPUTATIONAL ACOUSTICS ON CURVILINEAR MESHES

2001 ◽  
Vol 09 (04) ◽  
pp. 1259-1286 ◽  
Author(s):  
MIGUEL R. VISBAL ◽  
DATTA V. GAITONDE
Keyword(s):  
Three Dimensional ◽  
Radiation Condition ◽  
Higher Order ◽  
High Order ◽  
High Frequencies ◽  
Decomposition Strategies ◽  
The Impact ◽  
Spurious Modes ◽  
Very High ◽  
Computational Strategy

A high-order compact-differencing and filtering algorithm, coupled with the classical fourth-order Runge–Kutta scheme, is developed and implemented to simulate aeroacoustic phenomena on curvilinear geometries. Several issues pertinent to the use of such schemes are addressed. The impact of mesh stretching in the generation of high-frequency spurious modes is examined and the need for a discriminating higher-order filter procedure is established and resolved. The incorporation of these filtering techniques also permits a robust treatment of outflow radiation condition by taking advantage of energy transfer to high-frequencies caused by rapid mesh stretching. For conditions on the scatterer, higher-order one-sided filter treatments are shown to be superior in terms of accuracy and stability compared to standard explicit variations. Computations demonstrate that these algorithmic components are also crucial to the success of interface treatments created in multi-domain and domain-decomposition strategies. For three-dimensional computations, special metric relations are employed to assure the fidelity of the scheme in highly curvilinear meshes. A variety of problems, including several benchmark computations, demonstrate the success of the overall computational strategy.

Molecule-Based Magnets—An Overview

MRS Bulletin ◽  
2000 ◽  
Vol 25 (11) ◽  
pp. 21-30 ◽  
Author(s):  
Joel S. Miller ◽  
Arthur J. Epstein
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Magnetic Ordering ◽  
Low Density ◽  
Materials Properties ◽  
The Common ◽  
New Processing ◽  
Very High

Molecule-based magnets are a broad, emerging class of magnetic materials that expand the materials properties typically associated with magnets to include low density, transparency, electrical insulation, and low-temperature fabrication, as well as combine magnetic ordering with other properties such as photoresponsiveness. Essentially all of the common magnetic phenomena associated with conventional transition-metal and rare-earth-based magnets can be found in molecule-based magnets. Although discovered less than two decades ago, magnets with ordering temperatures exceeding room temperature, very high (∼27.0 kOe or 2.16 MA/m) and very low (several Oe or less) coercivities, and substantial remanent and saturation magnetizations have been achieved. In addition, exotic phenomena including photoresponsiveness have been reported. The advent of molecule-based magnets offers new processing opportunities. For example, thin-film magnets can be prepared by means of low-temperature chemical vapor deposition and electrodeposition methods.

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