scholarly journals MAGNETRON SPUTTERING WITH HOT SOLID TARGET: THERMAL PROCESSES AND EROSION

2016 ◽  
Vol 56 (6) ◽  
pp. 425-431
Author(s):  
Alena Olegovna Borduleva ◽  
Galina Alekseevna Bleykher ◽  
Dmitrii Vladimirovich Sidelev ◽  
Valeriy Pavlovich Krivobokov
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Thermal Insulation ◽  
Thermal Conduction ◽  
Evaporation Rate ◽  
Thermal Processes ◽  
Solid Target ◽  
Coating Deposition ◽  
Titanium Target ◽  
Hot Target

This work focuses on erosion and thermal processes taking place on the surface of the titanium target in magnetron sputtering. The study was carried out using magnetron sputtering systems (MSS) with different thermal insulation target types from the magnetron body. It was found that the presence of an evaporation component allows the rate of removal of atoms from the surface of a solid target to be increased with limited thermal conduction. A mathematical simulation was used to evaluate the contribution of evaporation to the increase in the coating deposition rate for complete and partial thermal insulation. It was found that non-uniformity of the direct-axis component of the magnetic induction vector helps to localize the heating. also increases the evaporation rate on the surface of the target. It was proved that local evaporation including sublimations on the surface of a hot target is a significant factor in increasing the coating deposition rate. Due to this mechanism, the coating deposition rate can be increased 5 times for Ti in comparison with fully cooled targets. This result can be applied for direct current magnetrons and also for pulsed systems. It was also found that evaporation increased the energy efficiency of the target erosion. The most suitable metals were selected for obtaining high-intensity emission of atoms from a solid target.

scholarly journals Time saving technique for studying thermal processes in magnetron sputtering of titanium target

2021 ◽  
Vol 1799 (1) ◽  
pp. 012021
Author(s):  
V A Pavlov ◽  
V I Shapovalov ◽  
D S Shestakov ◽  
A V Rudakov ◽  
A E Shabalin
Keyword(s):  
Magnetron Sputtering ◽  
Thermal Processes ◽  
Time Saving ◽  
Titanium Target

Hole Formation in Gold Films

1972 ◽  
Vol 30 ◽  
pp. 510-511
Author(s):  
R. W. Vook ◽  
R. Cook ◽  
R. Ziemer
Keyword(s):  
Deposition Rate ◽  
Quartz Crystal ◽  
Evaporation Rate ◽  
Gold Films ◽  
Hole Density ◽  
Hole Formation ◽  
Microscope Slide ◽  
Crystal Film ◽  
Glass Microscope Slide ◽  
Glass Microscope

During recent experiments on Au films, a qualitative correlation between hole formation and deposition rate was observed. These early studies were concerned with films 80 to 1000A thick deposited on glass at -185°C and annealed at 170°C. In the present studies this earlier work was made quantitative. Deposition rates varying between 5 and 700 A/min were used. The effects of deposition rate on hole density for two films 300 and 700A thick were investigated.Au was evaporated from an outgassed W filament located 10 cm from a glass microscope slide substrate and a quartz crystal film thickness monitor. A shutter separating the filament from the substrate and monitor made it possible to obtain a constant evaporation rate before initiating deposition. The pressure was reduced to less than 1 x 10-6 torr prior to cooling the substrate with liquid nitrogen. The substrate was cooled in 15 minutes during which the pressure continued to drop to the mid 10-7 torr range, where deposition was begun.

scholarly journals Fabrication and Mechanical Properties of Cr2AlC MAX Phase Coatings on TiBw/Ti6Al4V Composite Prepared by HiPIMS

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 826
Author(s):  
Muhammad Waqas Qureshi ◽  
Xinxin Ma ◽  
Guangze Tang ◽  
Bin Miao ◽  
Junbo Niu
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Pulse Width ◽  
Average Power ◽  
Max Phase ◽  
Ex Situ ◽  
Gas Temperature ◽  
Degree Of Ionization ◽  
Force Microscopy ◽  
High Degree

The high-power impulse magnetron sputtering (HiPIMS) technique is widely used owing to the high degree of ionization and the ability to synthesize high-quality coatings with a dense structure and smooth morphology. However, limited efforts have been made in the deposition of MAX phase coatings through HiPIMS compared with direct current magnetron sputtering (DCMS), and tailoring of the coatings’ properties by process parameters such as pulse width and frequency is lacking. In this study, the Cr2AlC MAX phase coatings are deposited through HiPIMS on network structured TiBw/Ti6Al4V composite. A comparative study was made to investigate the effect of average power by varying frequency (1.2–1.6 kHz) and pulse width (20–60 μs) on the deposition rate, microstructure, crystal orientation, and current waveforms of Cr2AlC MAX phase coatings. X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to characterize the deposited coatings. The influence of pulse width was more profound than the frequency in increasing the average power of HiPIMS. The XRD results showed that ex situ annealing converted amorphous Cr-Al-C coatings into polycrystalline Cr2AlC MAX phase. It was noticed that the deposition rate, gas temperature, and roughness of Cr2AlC coatings depend on the average power, and the deposition rate increased from 16.5 to 56.3 nm/min. Moreover, the Cr2AlC MAX phase coatings produced by HiPIMS exhibits the improved hardness and modulus of 19.7 GPa and 286 GPa, with excellent fracture toughness and wear resistance because of dense and column-free morphology as the main characteristic.

The state of coating–substrate interfacial region formed during TiO2 coating deposition by Gas Injection Magnetron Sputtering technique

2020 ◽  
Vol 398 ◽  
pp. 126092 ◽  
Author(s):  
Rafal Chodun ◽  
Katarzyna Nowakowska-Langier ◽  
Bartosz Wicher ◽  
Sebastian Okrasa ◽  
Roch Kwiatkowski ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Gas Injection ◽  
The State ◽  
Tio2 Coating ◽  
Interfacial Region ◽  
Coating Deposition

Influence of argon pressure and current density on substrate temperature during magnetron sputtering of hot titanium target

2017 ◽  
Vol 124 (1) ◽  
Author(s):  
Anton A. Komlev ◽  
Ekaterina A. Minzhulina ◽  
Vladislav V. Smirnov ◽  
Viktor I. Shapovalov
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Current Density ◽  
Argon Pressure ◽  
Titanium Target

Deposition-rate dependence of orientation growth and crystallization of Ti thin films prepared by magnetron sputtering

2015 ◽  
Vol 574 ◽  
pp. 71-77 ◽  
Author(s):  
A.Y. Chen ◽  
Y. Bu ◽  
Y.T. Tang ◽  
Y. Wang ◽  
F. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Rate Dependence ◽  
Orientation Growth

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

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