Formation mechanism and chaotic reinforcement elimination of the mechanical stirring isolated mixed region

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Yuewei Fan ◽  
Shibo Wang ◽  
Hua Wang ◽  
Jianxin Xu ◽  
Qingtai Xiao ◽  
...  
Keyword(s):  
Power Consumption ◽  
Formation Mechanism ◽  
Coherent Structure ◽  
Formation Process ◽  
Mathematical Theory ◽  
Mixing Efficiency ◽  
Shear Effect ◽  
Unsteady State ◽  
Dissipation Process ◽  
Mechanical Stirring

Abstract The isolated mixed region (IMR) is gradually formed during stirring and reduces the mixing efficiency. The unsteady-state formation process of the IMR was modeled and its formation mechanism was analyzed. The rotating frequency of the impeller was optimized using the chaos mathematical theory to improve the stirring efficiency without increasing the power consumption. The calculated results demonstrate that the IMR is a coherent structure, and its formation process is based on the free shear effect of the mixed layer. The chaotic stirring method can accelerate the momentum dissipation process by 37% by eliminating the IMR, and increase the speed by up to 31%. Therefore, chaotic mixing can eliminate the IMR in a shorter time and lower the power consumption.

Evidence of thermoplastic instability about segmented chip formation process for Ti–6Al–4V alloy based on the finite-element method

2011 ◽  
Vol 225 (6) ◽  
pp. 1407-1417 ◽  
Author(s):  
G Chen ◽  
C Ren ◽  
X Yang ◽  
T Guo
Keyword(s):  
Finite Element ◽  
Formation Mechanism ◽  
Failure Criterion ◽  
Formation Process ◽  
Chip Formation ◽  
Deformation Zone ◽  
Chip Morphology ◽  
Fe Model ◽  
Friction Characteristic ◽  
Segmented Chip

A ductile failure law and an energy-based failure criterion have been implemented in a 2D finite-element (FE) model to simulate the segmented chip formation process in titanium alloy (Ti–6Al–4V) machining. The variations of stress and strain are taken into account in defining the material failure criterion. The cutting forces and chip morphology calculated by FE model are compared with experimental results in good agreement, validating the FE model. Stresses, strains, cutting temperatures, and stiffness degradation along adiabatic shear bands (ASBs) are analysed during the segment formation process to investigate the segment formation mechanism. It is found that the variation trend of strains is the same as that of temperatures, in addition, the variation of strains and their changing-rate lag slightly behind those of temperatures. These observations provide a new evidence of thermoplastic instability along ASB and increase the understanding of segmented chip formation mechanism. Furthermore, simulation results show that ASB morphology and its forming mechanism are mainly caused by thermoplastic instability in primary deformation zone and friction characteristic in the second deformation zone.

How do nitrogen-doped carbon dots generate from molecular precursors? An investigation of the formation mechanism and a solution-based large-scale synthesis

2015 ◽  
Vol 3 (27) ◽  
pp. 5608-5614 ◽  
Author(s):  
Yaoping Hu ◽  
Jing Yang ◽  
Jiangwei Tian ◽  
Jun-Sheng Yu
Keyword(s):  
Formation Mechanism ◽  
Formation Process ◽  
Carbon Dots ◽  
Large Scale ◽  
Molecular Precursors ◽  
Nitrogen Doped ◽  
Scalable Synthesis ◽  
Doped Carbon Dots ◽  
Nitrogen Doped Carbon ◽  
Fluorescent Carbon Dots

A solution-based method is developed for rapid and scalable synthesis of highly fluorescent carbon dots in a monoethanolamine system, and an interesting formation process of carbon dots is directly observed.

Au54(Et3P)18Cl12: a structurally related cluster to Au32(Et3P)12Cl8 gives insight into the formation process

2020 ◽  
Vol 49 (31) ◽  
pp. 10765-10771
Author(s):  
Sebastian Kenzler ◽  
Claudio Schrenk ◽  
Andreas Schnepf
Keyword(s):  
Formation Mechanism ◽  
Formation Process ◽  
Gold Cluster ◽  
Gold Clusters ◽  
Structural Motifs ◽  
Synthetic Procedure ◽  
Insight Into

Cluster fusion? A slight change in the synthetic procedure of Au32(Et3P)12Cl8 leads to the metalloid gold cluster Au54(Et3P)18Cl12, giving further insight into the formation mechanism, showing new structural motifs within metalloid gold clusters

Using hydrogen peroxide to mediate through a one-step hydrothermal method for the fast and green synthesis of N-CDs

RSC Advances ◽  
2015 ◽  
Vol 5 (116) ◽  
pp. 95744-95749 ◽  
Author(s):  
Jiangling He ◽  
Bingfu Lei ◽  
Haoran Zhang ◽  
Mingtao Zheng ◽  
Hanwu Dong ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
High Pressure ◽  
High Temperature ◽  
Green Synthesis ◽  
Hydrothermal Method ◽  
Formation Mechanism ◽  
Formation Process ◽  
Top Down ◽  
Bottom Up ◽  
One Step

The strategy for the formation mechanism of N-CDs under high temperature and high pressure can be summarized as consisting of two parts including top-down and bottom-up. It can serve as an efficient way to express the detailed formation process of N-CDs.

Formation mechanism of large size plate-like Al4SiC4 grains by a carbothermal reduction method

CrystEngComm ◽  
2018 ◽  
Vol 20 (10) ◽  
pp. 1399-1404 ◽  
Author(s):  
Xinming Xing ◽  
Bin Li ◽  
Junhong Chen ◽  
Xinmei Hou
Keyword(s):  
Formation Mechanism ◽  
Formation Process ◽  
Carbothermal Reduction ◽  
Reduction Method ◽  
Large Size ◽  
Carbothermal Reduction Method

Al4SiC4 was synthesized by a carbothermal reduction method and the formation process of large size grains is illustrated by an evaporation–condensation mechanism.

A Reduction of Off-Leakage Current of SWD (Sub-WordLine Driver) pMOSFET for NWL-Based Mobile DRAM

2013 ◽  
Author(s):  
Sanghyeon Jeon ◽  
Taehong Ha ◽  
Youngwoo Kim ◽  
Hyuckchai Jung ◽  
Taewoo Lee ◽  
...  
Keyword(s):  
Power Consumption ◽  
Leakage Current ◽  
Formation Process ◽  
Direct Contact ◽  
Critical Role ◽  
Titanium Atom ◽  
Depletion Region ◽  
Low Level ◽  
Contact Formation ◽  
Drain Region

Abstract We demonstrate an effective way of reducing off-leakage current in sub-wordline driver pMOSFETs with lightly-doped source/drain, where gate-induced drain leakage current is much relaxed, compared with those of asymmetric source/drain. In mobile DRAM, one of key parameters is to achieve an extremely low level of standby current in power consumption. What has been found is that an increase of offleakage current in the pMOSFET is related closely to a contact-formation process, in particular, TiSi2 in p+/n junction. When a direct contact becomes close to a source/drain region, a titanium atom in TiSi2 tends not only to diffuse into a depletion region of p+/n junction but to play a critical role in leakage current. Maximizing a distance between p+ gate and its direct contact should be emphasized in order to control offleakage current in such a pMOSFET.

In situ studies on controlling an atomically-accurate formation process of gold nanoclusters

Nanoscale ◽  
2015 ◽  
Vol 7 (34) ◽  
pp. 14452-14459 ◽  
Author(s):  
Lina Yang ◽  
Hao Cheng ◽  
Yong Jiang ◽  
Ting Huang ◽  
Jie Bao ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Formation Process ◽  
Gold Nanoclusters ◽  
Metal Nanoclusters ◽  
In Situ Studies ◽  
Molecular Formation

Knowledge of the molecular formation mechanism of metal nanoclusters is essential for developing chemistry for accurate control over their synthesis.

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