scholarly journals Facile growth of aluminum oxide thin film by chemical liquid deposition and its application in devices

2020 ◽  
Vol 9 (1) ◽  
pp. 876-885
Author(s):  
Dianlun Li ◽  
Lu Ruan ◽  
Jie Sun ◽  
Chaoxing Wu ◽  
Ziwen Yan ◽  
...  
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Ph Value ◽  
Low Cost ◽  
Oxide Thin Film ◽  
Breakdown Field ◽  
Triboelectric Nanogenerator ◽  
Electron Blocking Layer ◽  
Chemical Liquid Deposition ◽  
Liquid Deposition

AbstractUniform and continuous Al2O3 thin films were prepared by the chemical liquid deposition (CLD) method. The breakdown field strength of the amorphous CLD-Al2O3 film is 1.74 MV/cm, making it could be used as a candidate dielectric film for electronic devices. It was further proposed to use the CLD-Al2O3 film as an electron blocking layer in a triboelectric nanogenerator (TENG) for output performances enhancement. Output voltages and currents of about 200 V and 9 µA were obtained, respectively, which were 2.6 times and 3 times, respectively, higher than TENG device without an Al2O3. A colloidal condensation-based procedure controlled by adjusting the pH value of the solution was proposed to be the mechanism of CLD, which was confirmed by the Tyndall effect observed in the growth liquid. The results indicated that the CLD could serve as a low-cost, room temperature, nontoxic and facile new method for the growth of functional thin films for semiconductor device applications.

Effect of Deposition Temperature on I-V Characteristics of Vanadium Oxide Film

2012 ◽  
Author(s):  
X. Y. Wei ◽  
M. Hu ◽  
F. Wang ◽  
J. Wei ◽  
K. L. Zhang
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Photoelectron Spectroscopy ◽  
Nonvolatile Memory ◽  
Semiconductor Device ◽  
Oxide Thin Film ◽  
Reset Voltage ◽  
Switching Characteristics ◽  
Vanadium Oxide Thin Films ◽  
Memory Applications

In this paper, the effects of deposition temperatures on the resistive switching characteristics of polycrystalline vanadium oxide thin films have been investigated. VOx thin films were prepared by reactive sputtering at various deposition temperatures (RT, 250 °C, 350 °C, and 450 °C, respectively). X-ray photoelectron spectroscopy revealed the compositions of VOx thin films. Electrical switching has been observed in Cu(tip)/VOx/Cu memory units by Semiconductor Device Analyzer. Crystalline characterizations revealed that as-deposited (RT) film was amorphous, the films crystallized into different phases (e.g. VO2, V2O5, VO1.86 etc.) with increasing the deposition temperatures. The VOx memory units have low Vset and Vreset. Furthermore, their set voltage decreased from 1.52 V to 0.45 V and reset voltage decreased from 1.01 V to 0.41 V with increasing the deposition temperatures from 250 °C to 450 °C, respectively. The thin films have three orders of change in resistivity between ON-state and OFF-state except as-deposited film. The vanadium oxide thin film can be a promising material for low power nonvolatile memory applications.

Chemical liquid deposition of gallium nitride thin films on siloxane-anchored self-assembled monolayers

2002 ◽  
Vol 73 (2-3) ◽  
pp. 301-305 ◽  
Author(s):  
T.P. Niesen ◽  
M. Puchinger ◽  
P. Gerstel ◽  
D. Rodewald ◽  
J. Wolff ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Chemical Liquid Deposition ◽  
Self Assembled ◽  
Liquid Deposition

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

scholarly journals Optoelectronic properties of highly porous silver oxide thin film

2021 ◽  
Vol 3 (1) ◽  
Author(s):  
Ahmad Al-Sarraj ◽  
Khaled M. Saoud ◽  
Abdelaziz Elmel ◽  
Said Mansour ◽  
Yousef Haik
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Plasma Etching ◽  
Silver Oxide ◽  
Oxidation Time ◽  
Oxide Thin Film ◽  
X Ray ◽  
Porous Silver ◽  
Highly Porous

Abstract In this paper, we report oxidation time effect on highly porous silver oxide nanowires thin films fabricated using ultrasonic spray pyrolysis and oxygen plasma etching method. The NW’s morphological, electrical, and optical properties were investigated under different plasma etching periods and the number of deposition cycles. The increase of plasma etching and oxidation time increases the surface roughness of the Ag NWs until it fused to form a porous thin film of silver oxide. AgNWs based thin films were characterized using X-ray diffraction, scanning electron microscope, transmission electron microscope, X-ray photoemission spectroscopy, and UV–Vis spectroscopy techniques. The obtained results indicate the formation of mixed mesoporous Ag2O and AgO NW thin films. The Ag2O phase of silver oxide appears after 300 s of oxidation under the same conditions, while the optical transparency of the thin film decreases as plasma etching time increases. The sheet resistance of the final film is influenced by the oxidation time and the plasma application periodicity. Graphic abstract

scholarly journals Synthesis of Polyaniline Coating on the Modified Fiber Ball and Application for Cr(VI) Removal

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Xiao Li Ma ◽  
Guang Tao Fei ◽  
Shao Hui Xu
Keyword(s):  
Waste Water ◽  
Large Scale ◽  
Ph Value ◽  
Low Cost ◽  
Strong Acid ◽  
Removal Capacity ◽  
Secondary Pollution ◽  
Potential Possibility ◽  
Fiber Ball ◽  
Maximum Removal

Abstract In this study, polyaniline (PANI) is prepared by means of chemical oxidization polymerization and directly loaded on the modified fiber ball (m-FB) to obtain macroscale polyaniline/modified fiber ball (PANI/m-FB) composite, and then its removal ability of Cr(VI) is investigated. The effects of different parameters such as contact time, pH value and initial concentration on Cr(VI) removal efficiency are discussed. The experimental results illustrate that the favorable pH value is 5.0 and the maximum removal capacity is measured to be 293.13 mg g−1. Besides, PANI/m-FB composites can be regenerated and reused after being treated with strong acid. The kinetic study indicates that the adsorption procedure is mainly controlled by chemical adsorption. More importantly, the macroscale of composites can avoid secondary pollution efficiently. Benefiting from the low cost, easy preparation in large scale, environmentally friendly, excellent recycling performance as well as high removal ability, PANI/m-FB composites exhibit a potential possibility to remove Cr(VI) from industrial waste water. Graphic Abstract The polyaniline (PANI) was coated on modified fiber ball (m-FB) to remove Cr(VI) in waste water, and this kind of PANI/m-FB composites can avoid secondary pollution efficiently due to its macrostructure. Furthermore, the removal capacity can reach to 291.13 mg/g and can be multiple reused.

scholarly journals Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)2] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22199-22205
Author(s):  
Rachel L. Wilson ◽  
Thomas J. Macdonald ◽  
Chieh-Ting Lin ◽  
Shengda Xu ◽  
Alaric Taylor ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hole Transport ◽  
Blocking Layer ◽  
The Novel ◽  
Electron Blocking Layer

We describe CVD of nickel oxide (NiO) thin films using a new precursor [Ni(dmamp′)2], synthesised using a readily commercially available dialkylaminoalkoxide ligand (dmamp′), which is applied to synthesis of a hole transport-electron blocking layer.

scholarly journals Graphene oxide-based rechargeable respiratory masks

2020 ◽  
Vol 1 (1) ◽  
Author(s):  
Stelbin Peter Figerez ◽  
Sudeshna Patra ◽  
G Rajalakshmi ◽  
Tharangattu N Narayanan
Keyword(s):  
Graphene Oxide ◽  
Polyvinylidene Fluoride ◽  
Occupational Safety ◽  
Low Cost ◽  
Triboelectric Nanogenerator ◽  
Layer System ◽  
Retention Capacity ◽  
Simple Modification ◽  
Nonwoven Fabrics ◽  
Mask Design

Abstract Respiratory masks having similar standards of ‘N95’, defined by the US National Institute for Occupational Safety and Health, will be highly sought after, post the current COVID-19 pandemic. Here, such a low-cost (∼$1/mask) mask design having electrostatic rechargeability and filtration efficiency of >95% with a quality factor of ∼20 kPa−1 is demonstrated. This filtration efficacy is for particles of size 300 nm. The tri-layer mask, named PPDFGO tri, contains nylon, modified polypropylene (PPY), and cotton nonwoven fabrics as three layers. The melt-spun PPY, available in a conventional N95 mask, modified with graphene oxide and polyvinylidene fluoride mixture containing paste using a simple solution casting method acts as active filtration layer. The efficacy of this tri-layer system toward triboelectric rechargeability using small mechanical agitations is demonstrated here. These triboelectric nanogenerator (TENG)-assisted membranes have high electrostatic charge retention capacity (∼1 nC/cm2 after 5 days in ambient condition) and high rechargeability even in very humid conditions (>80% RH). A simple but robust permeability measurement set up is also constructed to test these TENG-based membranes, where a flow rate of 30–35 L/min is maintained during the testing. Such a simple modification to the existing mask designs enabling their rechargeability via external mechanical disturbances, with enhanced usability for single use as well as for reuse with decontantamination, will be highly beneficial in the realm of indispensable personal protective equipment.

scholarly journals Synthesis and characterization of Fe, Co, and Ni colloids in 2-mercaptoethanol

2020 ◽  
Vol 10 ◽  
pp. 184798042096688
Author(s):  
Galo Cárdenas-Triviño ◽  
Sergio Triviño-Matus
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Colloidal Dispersions ◽  
Synthesis And Characterization ◽  
X Ray ◽  
Transmission Electron ◽  
Vis Spectroscopy ◽  
Chemical Liquid Deposition ◽  
Liquid Deposition

Metal colloids in 2-mercaptoethanol using nanoparticles (NPs) of iron (Fe), cobalt (Co), and nickel (Ni) were prepared by chemical liquid deposition method. Transmission electron microscopy, electron diffraction, UV-VIS spectroscopy, and scanning electron microscopy with electron dispersive X-ray spectroscopy characterized the resulting colloidal dispersions. The NPs exhibited sizes with ranges from 9.8 nm for Fe, 3.7 nm for Co, and 7.2 nm for Ni. The electron diffraction shows the presence of the metals in its elemental state Fe (0), Co (0), and Ni (0) and also some compounds FeO (OH), CoCo2S4, and NiNi2S4.

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