An analysis of high temperature (1150 °C) furnace annealing of buried oxide wafers formed by ion implantation

1989 ◽  
Vol 4 (1) ◽  
pp. 167-176 ◽  
Author(s):  
S. R. Wilson ◽  
M. E. Burnham ◽  
M. Kottke ◽  
R. P. Lorigan ◽  
S. J. Krause ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ion Implantation ◽  
Structural Changes ◽  
Relative Number ◽  
Silicon On Insulator ◽  
Precipitate Size ◽  
Buried Oxide ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Residual Damage

Silicon-on-insulator films were formed by ion implantation of oxygen and were treated with various annealing cycles at peak temperatures of 1150 °C, 1200 °C, and 1250 °C in a conventional diffusion furnace. The objective of this study was to examine the structural effects on samples with similar oxygen diffusion lengths (from 17 to 33 μm) achieved by annealing at different times and temperatures. The oxygen and silicon distributions, as well as the residual damage and precipitate size and distribution, were measured by Auger electron microscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy. In agreement with previous findings, higher temperatures produced a larger and less defective, “precipitate-free” superficial Si region. The buried oxide layer thickened from 0.33 μm to a maximum of 0.43 μm as some precipitates were incorporated into the buried oxide while others adjacent to the buried oxide grew in size (up to 47 nm) and decreased in relative number. A new result of this systematic study of annealing conditions was that the peak temperature has a greater effect on the morphology and crystal quality of the superficial Si structure than does time at temperature. Structural changes for longer anneals at 1150 °C are not equivalent to shorter anneals at 1250 °C even though the diffusion length of oxygen for these treatments is the same.

Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match

2002 ◽  
Vol 17 (7) ◽  
pp. 1634-1643 ◽  
Author(s):  
Meng Chen ◽  
Yuehui Yu ◽  
Xi Wang ◽  
Xiang Wang ◽  
Jing Chen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon On Insulator ◽  
Optimum Dose ◽  
Cross Sectional ◽  
Buried Oxide ◽  
Transmission Electron ◽  
Good Crystallinity ◽  
Grade Separation ◽  
Silicon Islands

In this article, we report formation of separation-by-implantation-of-oxygen (SIMOX) silicon-on-insulator (SOI) materials with doses ranging from (2.5 to 13.5) × 1017 cm−2 at acceleration energies of 70–160 keV and subsequent annealing at temperatures over 1300 °C in oxygen + argon atmosphere for 5 h. The microstructure evolution of SIMOX wafers was characterized by Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, high-resolution transmission electron microscopy, Secco, and Cu-plating. This study revealed a series of good matches of dose-energy combination at acceleration energies of 70–160 keV with doses of (2.5–5.5) × 1017 cm−2, in which SIMOX wafers had good crystallinity of the top silicon, sharp Si/SiO2 interfaces, high-integrity buried oxide layers with low pinhole density, and low detectable silicon islands. Furthermore, the higher the oxygen dose, the higher the implanted energy required for the formation of a buried oxide free from Si islands. The mechanism of the optimum dose-energy match is discussed.

THE DEFECT STRUCTURE OF ION-IMPLANTED AlxGa1−xAs/GaAs SUPERLATFICES

1985 ◽  
Vol 56 ◽  
Author(s):  
B.C. DE COOMAN ◽  
C.B. CARTER ◽  
J. RALSTON ◽  
G.W. WICKS ◽  
L.F. EASTMAN
Keyword(s):  
Electron Microscopy ◽  
Point Defects ◽  
Strain Field ◽  
Defect Structure ◽  
Extended Defects ◽  
Cross Sectional ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Residual Damage ◽  
Ion Implanted

AbstractCross-sectional transmission electron microscopy (XTEM) has been used to study the defect structure and intermixing of ion-implanted and annealed AlxGa1−xAs/GaAs superlattices. The results show clearly that the layer intermixing depends on mass and energy of the implanted species and the annealing conditions. The temperature and duration of annealing determines mainly the amount of residual damage. In addition it was observed that in all cases the point-defects agglomeration was influenced by the strain field present at the layer interfaces; extended defects nucleate preferentially in the GaAs layers.

Embedding Procedure for Water Swollen Samples

1970 ◽  
Vol 28 ◽  
pp. 504-505
Author(s):  
Ann M. Thomas ◽  
Virginia Shemeley
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Exchange ◽  
Structural Changes ◽  
Cross Linking ◽  
Ion Exchange Resins ◽  
Transmission Electron ◽  
First Pass ◽  
Exchange Resins

Those samples which swell rapidly when exposed to water are, at best, difficult to section for transmission electron microscopy. Some materials literally burst out of the embedding block with the first pass by the knife, and even the most rapid cutting cycle produces sections of limited value. Many ion exchange resins swell in water; some undergo irreversible structural changes when dried. We developed our embedding procedure to handle this type of sample, but it should be applicable to many materials that present similar sectioning difficulties.The purpose of our embedding procedure is to build up a cross-linking network throughout the sample, while it is in a water swollen state. Our procedure was suggested to us by the work of Rosenberg, where he mentioned the formation of a tridimensional structure by the polymerization of the GMA biproduct, triglycol dimethacrylate.

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

A Transmission Electron Microscopical Investigation of Phase Transformations in TiNi

1980 ◽  
Vol 38 ◽  
pp. 340-341
Author(s):  
P. Moine ◽  
G. M. Michal ◽  
R. Sinclair
Keyword(s):  
Electron Microscopy ◽  
Phase Transformations ◽  
Applied Stress ◽  
Structural Changes ◽  
Microscopical Investigation ◽  
Temperature Range ◽  
Transmission Electron ◽  
Electron Microscopical ◽  
Diffraction Effects ◽  
Microscopy Images

Premartensitic effects in near equiatomic TiNi have been pointed out by several authors(1-5). These include anomalous contrast in electron microscopy images (mottling, striations, etc. ),diffraction effects(diffuse streaks, extra reflections, etc.), a resistivity peak above Ms (temperature at which a perceptible amount of martensite is formed without applied stress). However the structural changes occuring in this temperature range are not well understood. The purpose of this study is to clarify these phenomena.

Size dependent behavior of Fe3O4crystals during electrochemical (de)lithiation: an in situ X-ray diffraction, ex situ X-ray absorption spectroscopy, transmission electron microscopy and theoretical investigation

2017 ◽  
Vol 19 (31) ◽  
pp. 20867-20880 ◽  
Author(s):  
David C. Bock ◽  
Christopher J. Pelliccione ◽  
Wei Zhang ◽  
Janis Timoshenko ◽  
K. W. Knehr ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Structural Changes ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Size Dependent ◽  
Transmission Electron ◽  
Dependent Behavior ◽  
X Ray Absorption

Crystal and atomic structural changes of Fe3O4upon electrochemical (de)lithiation were determined.

Calorimetric Analysis of Precipitation in Undercooled Ni-Si Alloy

2013 ◽  
Vol 307 ◽  
pp. 352-357
Author(s):  
Kai Fan ◽  
Feng Liu ◽  
Bao Quan Fu ◽  
Wen Zhong Luo ◽  
Yao He Zhou
Keyword(s):  
Electron Microscopy ◽  
Exothermic Reaction ◽  
Spherical Shape ◽  
Precipitate Size ◽  
Precipitation Process ◽  
Calorimetric Analysis ◽  
Shape Model ◽  
Transmission Electron ◽  
Isothermal Measurements ◽  
Good Agreement

In order to study the precipitaion of Ni3Si particle in undercooled Ni-Si alloy, calorimetric analyses were carried out using non-isothermal measurements by DSC. The scanning electron microscopy (SEM) and the transmission electron microscopy (TEM) measurements were used to describe qualitatively and quantitatively the precipitate microstructures. The non-isothermal DSC thermograms exhibited one reaction peaks and it indicated that the precipitation process is an exothermic reaction. The evolution for the precipitate was obtained in the as-solidified Ni-Si alloy subjected to DT=195K, meanwhile, the precipitate size was found increased with decreased heating rate in the TEM images. The largest precipitate size was about 120nm, and the precipitates still kept spherical shape. Model prediction for the precipitation of Ni3Si particle has been performed. Good agreement with experimental data has been achieved

Ultrastructures of Epibiotic Suctorian, Tokophrya huangmeiensis 

Zootaxa ◽  
2018 ◽  
Vol 4521 (1) ◽  
pp. 145
Author(s):  
URFA BIN TAHIR ◽  
DENG QIONG ◽  
WANG ZHE ◽  
LI SEN ◽  
LIU YANG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Light Microscopy ◽  
Structural Changes ◽  
Small Subunit ◽  
Free Living ◽  
Transmission Electron ◽  
Small Subunit Ribosomal Dna ◽  
Ribosomal Dna Sequence ◽  
Freshwater Ciliates

Tokophrya species are either free-living or facultative ectosymbiotic suctorians associated with copepods, isopods, mysids, decapods and amphipods. Tokophrya huangmeiensis in particular is found to be epizoic with the redclaw crayfish Cherax quadricarinatus Von Martens, 1868, which has been observed as part of an ongoing investigation of freshwater ciliates biodiversity in Huanggang, Hubei, China (Tahir et al. 2017). This first study on T. huangmeiensis based on morphological features using light microscopy and small subunit ribosomal DNA sequence (Tahir et al. 2017), suggested that more detailed descriptions on the physiological and structural changes of this species should be done. Thus, in this study, we looked at the ultrastructures of T. huangmeiensis using electron microscopy, including both scanning (SEM) and transmission electron microscopy (TEM). 

scholarly journals Structural Changes of Mo/ZSM-5 Catalysts During the Methane Dehydroaromatization

2009 ◽  
Vol 12 (1) ◽  
pp. 9 ◽  
Author(s):  
Z.R. Ismagilov ◽  
E.V. Matus ◽  
I.Z. Ismagilov ◽  
M.A. Kerzhentsev ◽  
V.I. Zailovskii ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Structural Changes ◽  
Atomic Ratio ◽  
X Ray ◽  
Reducing Atmosphere ◽  
Structure Changes ◽  
Transmission Electron ◽  
Methane Dehydroaromatization ◽  
Naoh Treatment ◽  
Mo Content

<p>The structure changes of Mo/ZSM-5 catalysts with different Mo content (2 and 10 wt. % Mo) and Si/Al atomic ratio (17, 30 and 45) during the methane dehydroaromatization have been investigated by X-ray powder diffractometry, N<sub>2</sub> adsorption and transmission electron microscopy. The treatment of Mo/ZSM-5 catalysts in reducing atmosphere (CH<sub>4</sub> or H<sub>2</sub>) at about 700 °C promotes development of mesoporous system. The pores are open to the exterior of the zeolite grain and have an entrance diameter of ~ 4-10 nm. It is proposed that mesopore formation in Mo/ZSM-5 catalyst is connected with the dealumination of zeolite. The mesopore formation in the parent H-ZSM-5 zeolite by NaOH treatment does not improve the activity of /ZSM-5 catalyst.</p>

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