Electrochemical and photoelectrochemical deposition of thallium(III) oxide thin films

1989 ◽  
Vol 4 (4) ◽  
pp. 923-929 ◽  
Author(s):  
Richard J. Phillips ◽  
Michael J. Shane ◽  
Jay A. Switzer
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Mass Transport ◽  
Short Pulse ◽  
Monochromatic Light ◽  
Instantaneous Nucleation ◽  
Electrochemically Deposited ◽  
Type Semiconductor ◽  
Deposited Films ◽  
High Intensity Light

Thallium (III) oxide is a degenerate n-type semiconductor with high optical transparency and electrical conductivity. Films of thallium(III) oxide can be electrochemically deposited onto conducting and p-type semiconducting substrates, and photoelectrochemically deposited onto n-type semiconducting substrates. Films deposited at currents below the mass transport limit onto platinum or stainless steel were columnar, and the current efficiency on stainless steel was 103 ±2%. Dendritic films were deposited at mass-transport-limited currents. Films were deposited with thicknesses ranging from 0.1 μm on n-silicon, to 170 μm on stainless steel. The photoelectrochemically deposited films were “direct-written” onto n-silicon, since the material was deposited only at irradiated portions of the electrode. Thin films were grown by irradiating the n-silicon with 450 nm monochromatic light, since the light was strongly absorbed by the thallium(III) oxide. The most uniform thin films were deposited when the n-silicon was initially irradiated with a short pulse of high intensity light. The pulse apparently promoted instantaneous nucleation of a high density of thallium(III) oxide nuclei.

Photoassisted Electrodeposition of Cuprous Oxide Thin Films

2021 ◽  
Vol 105 (1) ◽  
pp. 441-452
Author(s):  
Katharina Mairhofer ◽  
Bettina Kipper-Pires ◽  
Gerhard Leitner ◽  
Guenter Fafilek
Keyword(s):  
Thin Films ◽  
Cuprous Oxide ◽  
Sem Analysis ◽  
Sufficient Energy ◽  
Tenfold Increase ◽  
Absorption Of Light ◽  
Additional Illumination ◽  
Type Semiconductor ◽  
P Type ◽  
Deposited Films

Well-defined cuprous oxide (Cu2O) thin films can be electrodeposited from an electrolyte containing copper (II) sulfate, lactic acid and sodium hydroxide. As Cu2O is a p-type semiconductor, it is possible to accelerate the process through illumination with light of sufficient energy (>2.1eV). Cyclic voltammetry and transient potentiostatic measurements were performed in a three-electrode setup with copper metalized wafers as a working electrode. Illumination was performed through the electrolyte, therefore absorption of light by the electrolyte had to be taken into consideration. Potentiostatic measurements with a blue LED as a light source have shown an tenfold increase in layer thickness in comparison to depositions without additional illumination. The deposited films were investigated with SEM analysis.

scholarly journals Effects of Erbium on the Properties of Electrochemically-Deposited Zirconium Telluride Thin Films

2020 ◽  
pp. 108-114
Author(s):  
Agnes C. Nkele ◽  
Imosobomeh L. Ikhioya ◽  
Ezeorba M. Chigozirim ◽  
Samson O. Aisid ◽  
Malik Maaza ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Optical Materials ◽  
X Ray ◽  
Electrical Conductivities ◽  
Probe System ◽  
Electrochemically Deposited ◽  
Uv Visible ◽  
Deposited Films ◽  
Scanning Electron

This work studies the effects of varying erbium dopant percentages on the optical, structural, morphological,elemental, and electrical properties of zirconium telluride thin films deposited via electrochemical deposition technique.The obtained films were characterized using Uv-Visible Spectrophotometer, X-ray diffractometer (XRD), scanning electron microscope (SEM), energy dispersive x-ray spectroscope (EDX), and a four-point probe system. XRD analyses showed cubic polycrystalline films with the most intense peak at (111) plane. SEM micrographs revealed spherical balls while EDX spectra confirmed the deposition of basic elements. Good optical features and decreased band gap energies from 1.80 eV to 1.76 eV were observed upon addition of erbium. The electrical conductivities of the films improved significantly upon doping. The deposited films are potential solar cells, and optical materials.

Thermoelectric properties of thin films of bismuth telluride electrochemically deposited on stainless steel substrates

2011 ◽  
Vol 56 (11) ◽  
pp. 4216-4223 ◽  
Author(s):  
Yi Ma ◽  
Elisabet Ahlberg ◽  
Ye Sun ◽  
Bo Brummerstedt Iversen ◽  
Anders E.C. Palmqvist
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Electrochemically Deposited ◽  
Steel Substrates

scholarly journals Open-air printing of Cu2O thin films with high hole mobility for semitransparent solar harvesters

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Abderrahime Sekkat ◽  
Viet Huong Nguyen ◽  
César Arturo Masse de La Huerta ◽  
Laetitia Rapenne ◽  
Daniel Bellet ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Hole Mobility ◽  
Atomic Layer ◽  
Shallow Acceptor ◽  
Layer Deposition ◽  
Type Semiconductor ◽  
Cost Efficient ◽  
P Type ◽  
Deposited Films

AbstractCu2O is a promising p-type semiconductor for low-cost photovoltaics and transparent optoelectronics. However, low-cost and low-temperature fabrication of Cu2O films with good transport properties remains challenging, thus limiting their widespread adoption in devices. Here, we report Cu2O thin films of 20–80 nm thickness with hole mobility up to 92 cm2V−1s−1 using atmospheric-pressure spatial atomic layer deposition at temperatures below 260 °C, from a copper (I) hexafluoro-2,4-pentanedionate cyclooctadiene precursor. Raman spectroscopy indicates the presence of copper split vacancies and shows that the high hole mobility can be correlated to a low concentration of shallow acceptor defects. The optical bandgap of deposited films can be tuned between 2.08 eV and 2.5 eV, depending on the deposition temperature. All-oxide semitransparent Cu2O/ZnO solar harvesters are fabricated, showing efficiency values comparable to devices that incorporate much thicker Cu2O layers. Our work provides a promising approach towards cost-efficient, all-oxide solar harvesters, and for other (opto)electronic devices.

Electrical, Optical and Structural Properties of Tin Oxide Thin Films Deposited by APCVD

2013 ◽  
Vol 651 ◽  
pp. 38-41
Author(s):  
K. Lagha-Menouer ◽  
M.S. Belkaid ◽  
M. Pasquinelli
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Chemical Vapor ◽  
Electronic Microscopy ◽  
Oxide Thin Films ◽  
Post Annealing ◽  
Pressure Chemical ◽  
Type Semiconductor ◽  
Sno2 Thin Films ◽  
Deposited Films

Tin oxide SnO2 thin films are deposited by atmospheric pressure chemical vapor deposition APCVD technique. The electrical properties of the deposited films and the influence of the temperature ranging from room temperature to 500°C are analyzed by Hall measurement technique. The negative value of the hall constant indicates that the obtained tin oxide thin films are an N type semiconductor. The value of the mobility and the carrier concentration are 21 cm²/ V. sec and 1,50. 1020 cm-3 respectively. These films present an optical reflectance less than 20%.The change of the surface morphology due to the heat treatment is characterized by the scanning electronic microscopy SEM and the transmission electronic microscopy TEM. The films have a polycrystalline aspect. A post annealing at 500°C improves their morphology.

Phase transformation and preferred orientation in carboxylate derived ZrO2 thin films on silicon substates

1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Phase Transformation ◽  
Heating Rate ◽  
Tetragonal Phase ◽  
Monoclinic Phase ◽  
Preferred Orientation ◽  
Si Substrate ◽  
Interfacial Diffusion ◽  
Deposited Films

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.

scholarly journals Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Structural Defects ◽  
Film Composition ◽  
High Substrate ◽  
Foil Substrate

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

Studies on Magnetron-Sputtered NiO/Si3N4 Thin Films

2018 ◽  
Vol 17 (03) ◽  
pp. 1760039
Author(s):  
K. M. Dhanisha ◽  
M. Manoj Christopher ◽  
M. Abinaya ◽  
P. Deepak Raj ◽  
M. Sridharan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Smooth Surface ◽  
Deposition Time ◽  
Si Substrate ◽  
X Ray ◽  
Coating Time ◽  
Deposited Films ◽  
Nio Films ◽  
Scanning Electron

The present work deals with NiO/Si3N4 layers formed by depositing nickel oxide (NiO) thin films over silicon nitrate (Si3N[Formula: see text] thin films. NiO films were coated on Si3N4-coated Si substrate using magnetron sputtering method by changing duration of coating time and were analyzed using X-ray diffractometer, field emission-scanning electron microscopy, UV–Vis spectrophotometer and four-point probe method to study the influence of thickness on physical properties. Crystallinity of the deposited films increases with increase in thickness. All films exhibited spherical-like structure, and with increase in deposition time, grains are coalesced to form smooth surface morphology. The optical bandgap of NiO films was found to decrease from 3.31[Formula: see text]eV to 3.22[Formula: see text]eV with upsurge in the thickness. The film deposited for 30[Formula: see text]min exhibits temperature coefficient resistance of [Formula: see text]1.77%/[Formula: see text]C as measured at 80[Formula: see text]C.

scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

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