Ferroelectricity, ferromagnetism, and magnetoelectric coupling in highly textured thin films of the multiferroic Pb(Fe0.5Nb0.5)O3

2012 ◽  
Vol 1454 ◽  
pp. 51-56 ◽  
Author(s):  
Oscar Raymond-Herrera ◽  
Paola Góngora-Lugo ◽  
Carlos Ostos ◽  
Mario Curiel-Alvarez ◽  
Dario Bueno-Baques ◽  
...  
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Rf Magnetron Sputtering ◽  
Magnetoelectric Coupling ◽  
Ferroelectric Materials ◽  
Zero Field ◽  
Different Temperatures ◽  
Ferroelectric Hysteresis ◽  
First Time ◽  
Magnetization Behavior

ABSTRACTA study of the ferroelectric and magnetic properties and of the magnetoelectric coupling effects of Pb(Fe0.5Nb0.5)O3 (PFN) thin films, grown on SrRuO3/Si [(100) or (111)] substrates by the rf-magnetron sputtering technique, is presented. Structural, morphological, and compositional characterization was realized using the XRD, AFM, XPS, and TEM techniques. Highly textured single phase films with different thickness (from 45 to 270 nm) were successfully grown without Fe2+ presence. A vertically [110] oriented grainy structure was observed. Polarization vs. electric field (P-E) hysteresis loops exhibit excellent and almost constant values of the maximum (∼ 60 μC/cm2) and remanent (∼ 22 μC/cm2) polarizations in the temperature range from 4 K to room temperature; small values of the coercive field, characteristic of soft ferroelectric materials, are observed in these samples. Measurements of the zero-field cooled (ZFC) and field cooled (FC) magnetization behavior and magnetic (M-H) hysteresis loops were realized at different temperatures between 5 and 300 K. Proof of the existence of ferromagnetic order in the low temperature region (below to 50 K) is discussed and reported for the first time. Values of the maximum (∼ 3 emu/g) and remanent (∼ 1.5 emu/g) magnetizations were obtained. dc magnetic field dependence of the ferroelectric hysteresis loops are shown as evidence of the magnetoelectric coupling.

Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 177 ◽  
pp. 197-200
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
K.L. Su ◽  
A.H. Cai ◽  
J. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Si Substrates ◽  
Ferroelectric Hysteresis

Eu2O3-doped bismuth titanate (Bi1-xEuxTi3O12: BET) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BET films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with x=0.0 , 0.25, 1.0 and 1.25, I-E characteristics exhibited negative differential resistance behaviors and their ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with x=0.5 and 0.75, I-E characteristics were simple ohmic behaviors and their ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization (Pr) and coercive field (Ec) of the BET Film with x=0.75 were above 30μC/cm2 and 85KV/cm , respectively.

Ferroelectric Properties and Microstructures of Pr6O11-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 434-435 ◽  
pp. 281-284
Author(s):  
Min Chen ◽  
A.H. Cai ◽  
X.A. Mei ◽  
K.L. Su ◽  
Chong Qing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Large Leakage Current ◽  
Ferroelectric Hysteresis

Pr6O11-doped bismuth titanate (BixPryTi3O12: BPT) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BPT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with y=0.06, 0.3, 1.2 and 1.5, ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with y=0.6 and 0.9, ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Film with y=0.9 were above 35μC/cm2 and 80KV/cm , respectively. After 3×1010 switching cycles, 20% degradation of 2Pr is observed in the film with y=0.9.

Electrical Characteristics and Microstructures of Pr2O3-Doped Bi4Ti3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 370-373
Author(s):  
Chong Qing Huang ◽  
X.A. Mei ◽  
M. Chen ◽  
B. Li
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Si Substrates ◽  
Ferroelectric Hysteresis

Pr2O3-doped bismuth titanate (Bi4-xPrxTi3O12: BPT) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BPT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with x=0..0 , 0.25, 1.0 and 1.25, I-E characteristics exhibited negative differential resistance behaviors and their ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with x=0.5 and 0.75, I-E characteristics were simple ohmic behaviors and their ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Film with x=0.75 were above 30μC/cm2 and 75KV/cm , respectively.

scholarly journals Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1435
Author(s):  
Kaneez Fatima ◽  
Hadia Noor ◽  
Adnan Ali ◽  
Eduard Monakhov ◽  
Muhammad Asghar
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Silicon Germanium ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
The Past ◽  
High Power Factor ◽  
Different Temperatures ◽  
P Type ◽  
Quartz Substrates

Over the past few years, thermoelectrics have gained interest with regard to thermoelectricity interconversion. The improvement in the efficiency of the thermoelectric material at an ambient temperature is the main problem of research. In this work, silicon–germanium (SiGe) thin films, owing to superior properties such as nontoxicity, high stability, and their integrability with silicon technologies, were studied for thermoelectric applications. P-type SiGe thin films were deposited on quartz substrates by DC/RF magnetron sputtering and annealed at three different temperatures for 1 hour. Significant enhancement in the Seebeck coefficient was achieved for the sample annealed at 670 °C. A high power factor of 4.1 μWcm−1K−2 was obtained at room temperature.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Ferroelectric Property and Microstructures of La-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 114-117
Author(s):  
X.A. Mei ◽  
Rui Fang Liu ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 20μC/cm2 and 85KV/cm , respectively.

Structural and Ferroelectric Properties of Epitaxial PbZr0.52Ti0.48O3 and BaTiO3 Thin Films Prepared on SrRuO3/SrTiO3(100) Substrates

2001 ◽  
Vol 688 ◽  
Author(s):  
J. Rodríguez Contreras ◽  
J. Schubert ◽  
U. Poppe ◽  
O. Trithaveesak ◽  
K. Szot ◽  
...  
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Tunnel Current ◽  
Single Crystalline ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Ferroelectric Hysteresis

AbstractWe have prepared single crystalline epitaxial PbZr0.52Ti0.48O3 (PZT) and BaTiO3 (BTO) thin films on single crystalline epitaxial SrRuO3 (SRO) thin films grown on SrTiO3 (100) (STO) substrates. PZT and SRO thin films were grown using high-pressure on-axis sputtering and BTO using pulsed laser deposition (PLD). The film thickness ranged between 12 to 165 nm. Their excellent structural properties, surface smoothness and interface sharpness were demonstrated by X-Ray Diffraction measurements (XRD), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Rutherford Backscattering Spectrometry and Channeling measurements (RBS/C) were used to analyze stoichiometry and crystalline quality. Ferroelectric hysteresis loops were obtained for all films of a thickness down to 12 nm showing a decrease in the remanent polarization Pr and an increase in the coercive field Ec towards thinner film thicknesses. Furthermore we have prepared tunneling junctions with a PZT or BTO barrier thickness of 3-6 nm. Reproducible bi-stable I-V-curves and bias dependence of the conductance were obtained suggesting an influence of the ferroelectric properties of the barrier material on the tunnel current.

scholarly journals Iron-Doped Lithium Tantalate Thin Films Deposited by Magnetron Sputtering: A Study of the Iron Role in the Structure and the Derived Magnetic Properties

Crystals ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 50 ◽  
Author(s):  
Sergio David Villalobos Mendoza ◽  
José Trinidad Holguín Momaca ◽  
José Trinidad Elizalde Galindo ◽  
Diana María Carrillo Flores ◽  
Sion Federico Olive Méndez ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Magnetic Hysteresis ◽  
Hysteresis Loops ◽  
Blocking Temperature ◽  
Ferromagnetic Behavior ◽  
Zero Field ◽  
Cooling Curves ◽  
X Ray Diffraction ◽  
Field Cooling

Fe-doped LiTaO3 thin films with a low and high Fe concentration (labeled as LTO:Fe-LC and LTO:Fe-HC, respectively) were deposited by magnetron sputtering from two home-made targets. The dopant directly influenced the crystalline structure of the LiTaO3 thin films, causing the contraction of the unit cell, which was related to the incorporation of Fe3+ ions into the LiTaO3 structure, which occupied Li positions. This substitution was corroborated by Raman spectroscopy, where the bands associated with Li-O bonds broadened in the spectra of the samples. Magnetic hysteresis loops, zero-field cooling curves, and field cooling curves were obtained in a vibrating sample magnetometer. The LTO:Fe-HC sample demonstrates superparamagnetic behavior with a blocking temperature of 100 K, mainly associated with the appearance of Fe clusters in the thin film. On the other hand, a room temperature ferromagnetic behavior was found in the LTO:Fe-LC layer where saturation magnetization (3.80 kAm−1) and magnetic coercivities were not temperature-dependent. Moreover, the crystallinity and morphology of the samples were evaluated by X-ray diffraction and scanning electron microscopy, respectively.

Diffuse Phase Transition and Ferroelectric Properties of Ceramic Solid Solutions in New SrTiO3-BiScO3 System

2010 ◽  
Vol 67 ◽  
pp. 59-63 ◽  
Author(s):  
Oleg Ivanov ◽  
Elena Danshina ◽  
Yulia Tuchina ◽  
Viacheslav Sirota
Keyword(s):  
Solid Solutions ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Ferroelectric Materials ◽  
X Ray Diffraction ◽  
Weakly Nonlinear ◽  
Nonlinear Hysteresis ◽  
Processing Techniques ◽  
First Time ◽  
Diffuse Phase

Ceramic solid solutions of (1-x)SrTiO3-(x)BiScO3 system with x=0, 0.05, 0.1, 0.2, 0.3, 0.4 and 0.5 have been for the first time synthesized via solid-state processing techniques. Both of end compounds in this system are not ferroelectric materials. X-ray diffraction analysis revealed that at room temperature the samples under study at x=0.2, 0.3, 0.4 and 0.5 consist of mixture of center-symmetric cubic Pm3m phase and polar tetragonal P4mm phase. Anomalous behaviour of dielectric permittivity and dielectric losses for these samples is found to be specific one for ferroelectrics with diffuse phase transitions. Furthermore, examination of the polarization hysteresis behavior revealed weakly nonlinear hysteresis loops in the ferroelectric phase.

Structure and Characterization of Sputtered Thin Films Based on Lead Titanate.

1991 ◽  
Vol 230 ◽  
Author(s):  
A. Pignolet ◽  
P. E. Schmid ◽  
L. Wang ◽  
F. Lévy
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Titanate ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Pyroelectric Coefficient ◽  
Amorphous Films ◽  
Substrate Heating ◽  
Ferroelectric Hysteresis

AbstractPure and doped lead-titanate (PT) and lead-zirconate-titanate (PZT) thin films have been deposited on platinum-coated silicon by rf-magnetron sputtering from pressed powder targets. The films have been deposited without substrate heating. The amorphous films were then annealed in an oxygen flow. The structure of the films is tetragonal or rhombohedral depending on composition. The electrical resistivity, dielectric permittivity, ferroelectric hysteresis and pyroelectric coefficient are reported.

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