Reducing density-induced CMP non-uniformity for advanced semiconductor technology nodes

2013 ◽  
Vol 1560 ◽  
Author(s):  
John H Zhang ◽  
Wei-Tsu Tseng ◽  
Tien Chen ◽  
Ben Kim ◽  
Philip Flaitz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
The Difference ◽  
Technology Nodes ◽  
Cu Cmp ◽  
Space Width ◽  
Line Space ◽  
Selection Of

ABSTRACTIn this paper, a novel set of macros with line/space width from 128nm/128nm, 64nm/64nm to 32nm/32nm was designed and installed on 20nm technology-node hardware. The pitch-dependent pad erosion post Cu CMP was studied by atomic-force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) quantitatively on these macros. Two methods were investigated to reduce the difference between pitch- and density-induced CMP non-uniformity. The first is using new scheme of partial Cu plating process followed by SiCNH insulator deposition and then CMP. The second is through the selection of slurries and pads. Both results are discussed in this paper.

Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers

2020 ◽  
Vol 1004 ◽  
pp. 421-426
Author(s):  
Hideki Sako ◽  
Kentaro Ohira ◽  
Kenji Kobayashi ◽  
Toshiyuki Isshiki
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stacking Faults ◽  
Wafer Surface ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
The Difference

Two types of carrot defects with and without a shallow pit were found by mirror projection electron microscopy (MPJ) inspection in 4H-SiC epi wafer. Surface morphology and cross-sectional structure of prismatic stacking faults (PSFs) were investigated using MPJ and atomic force microscopy (AFM), transmission electron microscopy (TEM) and high-resolution scanning transmission electron microscopy (STEM). The depths of the surface grooves due to the PSFs, the stacking sequences around the PSFs and the structure of the Frank-type stacking faults which were connected to the PSFs were different. We discuss the difference between the two types of carrot defects.

Slipline Offset of In.25Ga.75As/GaAs (100) Imaged by Atomic Force Microscopy

1993 ◽  
Vol 308 ◽  
Author(s):  
S.E. Harvey ◽  
J.E. Angelo ◽  
W.W. Gerberich
Keyword(s):  
Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Surface Instability ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
The Difference ◽  
Scanning Electron

ABSTRACTWe have discovered a surface instability in In.25GaAs.75/GaAs (100) grown by molecular beam epitaxy (MBE) by direct comparison of atomic force microscopy (AFM), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) investigations. While slipline spacings measured by AFM correspond fairly well with those measured by TEM and SEM, the height displacement measured by AFM was seven times greater than that inferred from dislocations observed with TEM; the number of dislocations are insufficient to produce such dramatic heights. The difference in height measured by AFM with respect to the theoretical height calculated by strain relaxation and TEM dislocation number measurement can be attributed to a surface instability.

Synthesis of gold nanocubes in aqueous solution with remarkable shape-selectivity

2011 ◽  
Vol 15 (05n06) ◽  
pp. 441-448 ◽  
Author(s):  
Adelaide Miranda ◽  
Eliana Malheiro ◽  
Peter Eaton ◽  
Patrícia A. Carvalho ◽  
Baltazar de Castro ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Shape Selectivity ◽  
Water Soluble ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Gold Precursor ◽  
Average Size ◽  
Water Soluble Porphyrin ◽  
Selection Of

This paper reports a facile method to prepare gold nanocubes with an average size length of 13 ± 2 nm, a shape selectivity >90%, and a very good reproducibility. The gold nanocubes were prepared by photocatalytic reduction of Au(III) using a cationic, water soluble porphyrin as the photocatalyst, and cetyltrimethylammonium bromide as the capping agent. The synthesis is performed in water, at pH 7, and room temperature. The nanocubes were characterized by transmission electron microscopy, scanning electron microscopy, atomic force microscopy, and X-ray phototelectron spectroscopy. Shape selectivity for the synthesis of nanocubes is due to a different rate of growth of the (100) and (111) facets of the nanoparticles, and such control in this synthesis is achieved by careful selection of the initial gold precursor for the photocatalytic cycle.

Preparation and comparison of YBa2Cu4O8 films on MgO(100) and SrTiO3(100) by MOCVD

1993 ◽  
Vol 8 (9) ◽  
pp. 2143-2148 ◽  
Author(s):  
H. Sakai ◽  
Y. Shiohara ◽  
S. Tanaka
Keyword(s):  
Electron Microscopy ◽  
Lattice Mismatch ◽  
Film Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
The Difference ◽  
Xrd Patterns

The thin films (Y/Ba/Cu = 1.0/2.7/4.7) which have a strong intensity corresponding to the c-axis peaks of the 124 phase (YBa2Cu4O8) in x-ray diffraction (XRD) patterns were prepared. The film structure and surface morphology of these films were observed by scanning electron microscopy (SEM), energy dispersive x-ray (EDX), transmission electron microscopy (TEM), and atomic force microscopy (AFM). It was found that the film on MgO(100) clearly has grain boundaries with many a-axis oriented grains of the 123 phase (YBa2Cu3O7−x). However, the film on SrTiO3(100) had a smooth surface, and a-axis oriented grains of the 123 phase couldn't be observed. This difference could not be explained by only the difference in the lattice mismatch.

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

1995 ◽  
Vol 403 ◽  
Author(s):  
G. Bai ◽  
S. Wittenbrock ◽  
V. Ochoa ◽  
R. Villasol ◽  
C. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Interconnects ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractCu has two advantages over Al for sub-quarter micron interconnect application: (1) higher conductivity and (2) improved electromigration reliability. However, Cu diffuses quickly in SiO2and Si, and must be encapsulated. Polycrystalline films of Physical Vapor Deposition (PVD) Ta, W, Mo, TiN, and Metal-Organo Chemical Vapor Deposition (MOCVD) TiN and Ti-Si-N have been evaluated as Cu diffusion barriers using electrically biased-thermal-stressing tests. Barrier effectiveness of these thin films were correlated with their physical properties from Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Secondary Electron Microscopy (SEM), and Auger Electron Spectroscopy (AES) analysis. The barrier failure is dominated by “micro-defects” in the barrier film that serve as easy pathways for Cu diffusion. An ideal barrier system should be free of such micro-defects (e.g., amorphous Ti-Si-N and annealed Ta). The median-time-to-failure (MTTF) of a Ta barrier (30 nm) has been measured at different bias electrical fields and stressing temperatures, and the extrapolated MTTF of such a barrier is > 100 year at an operating condition of 200C and 0.1 MV/cm.

Development of Ge Nanoparticles Embedded in GeO2 Matrix

2008 ◽  
Vol 8 (8) ◽  
pp. 4081-4085 ◽  
Author(s):  
Y. Batra ◽  
D. Kabiraj ◽  
D. Kanjilal
Keyword(s):  
Electron Microscopy ◽  
Annealing Temperature ◽  
Spectroscopic Studies ◽  
Electron Beam Evaporation ◽  
Granular Structure ◽  
Raman Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Ge Nanocrystals

Germanium (Ge) nanoparticles have attracted a lot of attention due to their excellent optical properties. In this paper, we report on the formation of Ge nanoparticles embedded in GeO2 matrix prepared by electron beam evaporation and subsequent annealing. Transmission electron microscopy (TEM) studies clearly indicate the formation of Ge nanocrystals in the films annealed at 500 °C. Fourier transform infrared (FTIR) spectroscopic studies are carried out to verify the evolution of the structure after annealingat each stage. Micro-Raman analysis also confirms the formation of Ge nanoparticles in the annealed films. Development of Ge nanoparticles is also established by photoluminescence (PL) analysis. Surface morphology study is carried out by atomic force microscopy (AFM). It shows the evolution of granular structure of the films with increasing annealing temperature.

scholarly journals Measuring the Autocorrelation Function of Nanoscale Three-Dimensional Density Distribution in Individual Cells Using Scanning Transmission Electron Microscopy, Atomic Force Microscopy, and a New Deconvolution Algorithm

2017 ◽  
Vol 23 (3) ◽  
pp. 661-667 ◽  
Author(s):  
Yue Li ◽  
Di Zhang ◽  
Ilker Capoglu ◽  
Karl A. Hujsak ◽  
Dhwanil Damania ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Density Distribution ◽  
Scanning Transmission Electron Microscopy ◽  
Mass Density ◽  
Three Dimensional ◽  
Force Microscopy ◽  
Statistical Measures ◽  
Atomic Force ◽  
Transmission Electron ◽  
Scanning Transmission

AbstractEssentially all biological processes are highly dependent on the nanoscale architecture of the cellular components where these processes take place. Statistical measures, such as the autocorrelation function (ACF) of the three-dimensional (3D) mass–density distribution, are widely used to characterize cellular nanostructure. However, conventional methods of reconstruction of the deterministic 3D mass–density distribution, from which these statistical measures can be calculated, have been inadequate for thick biological structures, such as whole cells, due to the conflict between the need for nanoscale resolution and its inverse relationship with thickness after conventional tomographic reconstruction. To tackle the problem, we have developed a robust method to calculate the ACF of the 3D mass–density distribution without tomography. Assuming the biological mass distribution is isotropic, our method allows for accurate statistical characterization of the 3D mass–density distribution by ACF with two data sets: a single projection image by scanning transmission electron microscopy and a thickness map by atomic force microscopy. Here we present validation of the ACF reconstruction algorithm, as well as its application to calculate the statistics of the 3D distribution of mass–density in a region containing the nucleus of an entire mammalian cell. This method may provide important insights into architectural changes that accompany cellular processes.

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