A Study of Structural Damage & Recovery of Si, Ge and Ga FIB implants in Silicon

2014 ◽  
Vol 1712 ◽  
Author(s):  
Prabhu Balasubramanian ◽  
Jeremy F. Graham ◽  
Robert Hull
Keyword(s):  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Broad Beam ◽  
Implantation Damage ◽  
Before And After ◽  
And Control ◽  
Ion Current Density ◽  
Ion Species ◽  
Substantial Interest

ABSTRACTThe focused ion beam (FIB) has the necessary precision, spatial resolution and control over ion delivery for potential nano-scale doping of nanostructures such as semiconductor quantum dots (QDs). The ion current density in a FIB is 0.1-10 A/cm2, which is at least three orders of magnitude higher than that in a commercial broad beam ion implanter. Therefore an understanding of FIB implantation damage and recovery is of substantial interest. In this work we employ Raman probes of wavelengths 514 nm and 405 nm for quantifying ion implantation damage—both before and after annealing—in 30 kV Si2+, Ge2+ and Ga+ implants (fluences: 1x1012-5x1015 ions/cm2) into Si(100), for the purpose of understanding the effect of ion species on damage recovery.

Broad and Focused Ion Beam Ga+ Implantation Damage in the Fabrication of p+-n Si Shallow Junctions

1989 ◽  
Vol 147 ◽  
Author(s):  
A. J. Steckl ◽  
C-M. Lin ◽  
D. Patrizio ◽  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Electrical Properties ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Recrystallization Behavior ◽  
Tem Analysis ◽  
Broad Beam ◽  
Implantation Damage ◽  
Shallow Junctions ◽  
Implantation Techniques ◽  
Lower Sheet Resistance

AbstractThe use of focused and broad beam Ga+ implantation for the fabrication of p+-n Si shallow junctions is explored. In particular, the issue of ion induced damage and its effect on diode electrical properties is explored. FIB-fabricated junctions exhibit a deeper junction with lower sheet resistance and higher leakage current than the BB-implanted diodes. TEM analysis exhibits similar amorphization and recrystallization behavior for both implantation techniques with the BB case generating a higher dislocation loop density after a 900°C anneal.

Fast Turn-around Failure Analysis of Metal Interconnection Using FIB and LA ICP-MS

2010 ◽  
Author(s):  
Zixiao Pan ◽  
Wei Wei ◽  
Fuhe Li
Keyword(s):  
Failure Analysis ◽  
Inductively Coupled Plasma ◽  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Detection Sensitivity ◽  
Chemical Contamination ◽  
Inductively Coupled ◽  
Minimal Sample ◽  
Icp Ms

Abstract This paper introduces our effort in failure analysis of a 200 nm thick metal interconnection on a glass substrate and covered with a passivation layer. Structural damage in localized areas of the metal interconnections was observed with the aid of focused ion beam (FIB) cross-sectioning. Laser ablation inductively coupled plasma mass spectroscopy (LA ICP-MS) was then applied to the problematic areas on the interconnection for chemical survey. LA ICP-MS showed direct evidence of localized chemical contamination, which has likely led to corrosion (or over-etching) of the metal interconnection and the assembly failure. Due to the high detection sensitivity of LA ICP-MS and its compatibility with insulating material analysis, minimal sample preparation is required. As a result, the combination of FIB and LA ICP-MS enabled successful meso-scale failure analysis with fast turnaround and reasonable cost.

Optimizing Gas-Assisted Processes for Ga and Xe FIB Circuit Edit Application

2016 ◽  
Author(s):  
Valery Ray ◽  
Josef V. Oboňa ◽  
Sharang Sharang ◽  
Lolita Rotkina ◽  
Eddie Chang ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Width ◽  
Ion Source ◽  
Reconstruction Technique ◽  
Beam Diameter ◽  
Current Profile ◽  
Single Beam

Abstract Despite commercial availability of a number of gas-enhanced chemical etches for faster removal of the material, there is still lack of understanding about how to take into account ion implantation and the structural damage by the primary ion beam during focused ion beam gas-assisted etching (FIB GAE). This paper describes the attempt to apply simplified beam reconstruction technique to characterize FIB GAE within single beam width and to evaluate the parameters critical for editing features with the dimensions close to the effective ion beam diameter. The approach is based on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB potentially suitable platform for selective removal of materials in circuit edit application.

Oxidation of Alloy-X in Subcritical, Transition, and Supercritical Water

CORROSION ◽  
10.5006/3881 ◽  
2021 ◽  
Author(s):  
Zachary Karmiol ◽  
Dev Chidambaram
Keyword(s):  
Supercritical Water ◽  
Photoelectron Spectroscopy ◽  
Focused Ion Beam ◽  
Elevated Temperatures ◽  
Subcritical Water ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nickel Based Superalloy ◽  
Before And After

This work investigates the oxidation of a nickel based superalloy, namely Alloy X, in water at elevated temperatures: subcritical water at 261°C and 27 MPa, the transition between subcritical and supercritical water at 374°C and 27 MPa, and supercritical water at 380°C and 27 MPa for 100 hours. The morphology of the sample surfaces were studied using scanning electron microscopy coupled with focused ion beam milling, and the surface chemistry was investigated using X-ray diffraction, Raman spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy before and after exposure studies. Surfaces of all samples were identified to comprise of a ferrite spinel containing aluminum.

Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

2018 ◽  
Vol 1 (2) ◽  
pp. 115-123 ◽  
Author(s):  
Zhongdu He ◽  
Zongwei Xu ◽  
Mathias Rommel ◽  
Boteng Yao ◽  
Tao Liu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Implantation Dose ◽  
Formation Mechanisms ◽  
Schematic Model ◽  
Dose Threshold ◽  
Before And After

In order to investigate the damage in single-crystal 6H-silicon carbide (SiC) in dependence on ion implantation dose, ion implantation experiments were performed using the focused ion beam technique. Raman spectroscopy and electron backscatter diffraction were used to characterize the 6H-SiC sample before and after ion implantation. Monte Carlo simulations were applied to verify the characterization results. Surface morphology of the implantation area was characterized by the scanning electron microscope (SEM) and atomic force microscope (AFM). The ‘swelling effect’ induced by the low-dose ion implantation of 1014−1015 ions cm−2 was investigated by AFM. The typical Raman bands of single-crystal 6H-SiC were analysed before and after implantation. The study revealed that the thickness of the amorphous damage layer was increased and then became saturated with increasing ion implantation dose. The critical dose threshold (2.81 × 1014−3.26 × 1014 ions cm−2) and saturated dose threshold (˜5.31 × 1016 ions cm−2) for amorphization were determined. Damage formation mechanisms were discussed, and a schematic model was proposed to explain the damage formation.

Residual Stress of Focused Ion Beam-Exposed Polycrystalline Silicon

2006 ◽  
Vol 983 ◽  
Author(s):  
Kim M. Archuleta ◽  
David P. Adams ◽  
Michael J. Vasile ◽  
Julia E. Fulghum
Keyword(s):  
Residual Stress ◽  
Plane Stress ◽  
White Light ◽  
Polycrystalline Silicon ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Medium Energy ◽  
White Light Interferometry ◽  
Before And After ◽  
Beam Damage

AbstractMedium energy (30 keV) focused gallium ion beam exposure of silicon results in a compressive in-plane stress with a magnitude as large as 0.4 GPa. Experiments involve uniform irradiation of thin polysilicon microcantilevers (200 micron length) over a range of dose from 1 x 1016 to 2 x 1018 ions/cm2. The radii of curvature of microcantilevers are measured using white light interferometry before and after each exposure. The residual stress is determined from these radii and other measured properties using Stoney's equation. The large residual stress is attributed to ion beam damage, microstructural changes and implantation.

Dependene of Focused Ion Beam Intensity Profile on Ion Species at Several Orders of Magnitude below the Peak Intensity

1987 ◽  
Vol 26 (Part 2, No. 2) ◽  
pp. L145-L147 ◽  
Author(s):  
Eizo Miyauchi ◽  
Hiroshi Arimoto ◽  
Tetsuo Morita ◽  
Hisao Hashimoto
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Intensity Profile ◽  
Beam Intensity ◽  
Peak Intensity ◽  
Ion Species

Rapid Nanomanufacturing of Metallic Break Junctions Using Focused Ion Beam Scratching and Electromigration

2010 ◽  
Vol 132 (3) ◽  
Author(s):  
Waseem Asghar ◽  
Priyanka P. Ramachandran ◽  
Adegbenro Adewumi ◽  
Mohammud R. Noor ◽  
Samir M. Iqbal
Keyword(s):  
Molecular Electronics ◽  
Electrical Transport ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Yield ◽  
Electrical Transport Properties ◽  
Metal Line ◽  
Break Junctions ◽  
Current Voltage ◽  
Before And After

Break junctions provide a direct way to interrogate electrical transport properties of molecules, in pursuit of molecular electronics devices. A number of approaches are used for the fabrication of break junctions, including optical/e-beam lithography, electromigration, mechanical control of suspended conductive electrodes/strips, and electrochemical deposition of conductive material and nanowires. All approaches either require serial and slow e-beam writing of nanoscale gaps or suffer from low-yield of nanogap electrode devices. Here, we report the use of focused ion beam (FIB) to “scratch” and remove a thin layer of gold from 3 μm wide lines. The scratch results in thinning of the metal line and subsequent current-driven electromigration results into nanogaps at precise locations with high yield of devices. Combining FIB scratching with electromigration provides an elegant approach of creating nanoscale break junctions at an exact location and with a very narrow distribution of the nanogap sizes. Current-voltage measurements are done using a probe station before and after FIB scratch, and after the breaks were formed. Most of the gaps fall within 200–300 nm range and show negligible conductivity. The approach provides a novel, rapid, and high-throughput manufacturing approach of break junction fabrication that can be used for molecular sensing.

Sub-Micron Selective Photoluminescence in Porous Si by Focused Ion Beam Implantation

1992 ◽  
Vol 281 ◽  
Author(s):  
A. J. Steckl ◽  
J. Xu ◽  
H. C. Mogul ◽  
S. Mogren
Keyword(s):  
Incubation Time ◽  
Focused Ion Beam ◽  
Hole Concentration ◽  
Ion Beam ◽  
Porous Si ◽  
Strong Function ◽  
Si Substrates ◽  
Si Doping ◽  
Broad Beam ◽  
First Time

ABSTRACTThe effect of Si doping on the formation of stain-etched porous Si and its photoluminescent properties was studied. Porous Si is obtained by purely chemical etching of crystalline Si in a solution of HF:HNO3:H2O in the ratio of 1:3:5. We have observed that an incubation time (ti) exists between the insertion of Si into the solution and the onset of porous Si production. This incubation time was found to be a strong function of hole concentration in both n- and p-Si. In p-Si, the ti decreased rapidly with increasing conductivity, whereas for n-Si the opposite (but not as pronounced) trend was found to be the case. For example in (B-doped) p-Si, ti, is only ∼0.5 min for 250 (Ω-cm)−1 but increases to ∼ 5 min for 0.2 (Ω-cm)−1. In (P-doped) n-Si substrates ti was ∼ 8 min for 0.2 (Ω-cm)−1 increasing to ∼ 10 min for 7 (Ω-cm)−1. Photoluminescence (PL) measurements of the porous Si obtained on substrates of various conductivity (p and n) show similar spectra, namely a peak at around 1.94 eV with a full width at half-maximum (FWHM) of about 0.5 eV. Based on the ti difference, we have fabricated localized photoemitting porous Si patterns by Ga+ focused ion beam (FIB) implantation doping and B+ broad beam (BB) implantation doping of n-type Si. Using 30 kV FIB Ga+ implantation, sub-micron photoemitting patterns have been obtained for the first time.

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