Effects of CO2 on Carbon Nanotube Formation from Thermal Decomposition of Ethylene

2015 ◽  
Vol 1747 ◽  
Author(s):  
Chuanwei Zhuo ◽  
Fariba Khanshan ◽  
Richard West ◽  
Henning Richter ◽  
Yiannis A. Levendis

AbstractCatalytic chemical vapor deposition (CVD) is a popular method to synthesize carbon nanotubes (CNTs). At the presence of catalysts (usually trasition metals), the hydrocarbon feedstock decomposes controllably at elevated temperatures and can form tubular structures. It has been suggested that trace amounts of weak gas-phase oxidants, such as CO2, can enhance the CNT synthesis by extending the catatlyst life. It is not clear, however, how such additives affect the CVD reaction environment. In this study, ethylene gas was introduced to a preheated furnace/CVD reactor where meshes of stainless steel were placed. Therein ethylene was thermally decomposed in nitrogen mixed with different amounts of carbon dioxide. The meshes served as catalytic substrates for the CNT growth. The compositions of the ethylene pyrolyzates were analysed both with and without the presence of catalysts, to explore the possible contributions of CO2 addition to the CNT formation. The latter compositions were compared with kinetic model predictions of the thermal decomposition of ethylene. Both experimental and simulation results indicated that 1,3-butadiene (C4H6) was the most abundant hydrocarbon species of ethylene decomposition (at 800 °C) and that decomposition was inhibitted at the presence of CO2. A commesurate effect on CNT formation was observed experimentally, whereas the quality of CNTs got improved.

2014 ◽  
Vol 602-605 ◽  
pp. 3092-3095
Author(s):  
Dong Sheng Peng ◽  
Zhi Gang Chen ◽  
Cong Cong Tan

A mathematical model for the growth of gallium nitride in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor is developed. The dependence of the GaN film and the uniformity of the deposited layers on the inlet flow is investigated. Based on the simulation results, the uniformity of the precursor distribution is better, with the increasment of the inlet flow, so the quality of GaN film is superior.


2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Gui-fang Li ◽  
Shibin Liu ◽  
Shanglin Yang ◽  
Yongqian Du

We prepared magnetic thin films Ni81Fe19on single-crystal Si(001) substrates via single graphene layer through magnetron sputtering for Ni81Fe19and chemical vapor deposition for graphene. Structural investigation showed that crystal quality of Ni81Fe19thin films was significantly improved with insertion of graphene layer compared with that directly grown on Si(001) substrate. Furthermore, saturation magnetization of Ni81Fe19/graphene/Si(001) heterostructure increased to 477 emu/cm3with annealing temperatureTa=400°C, which is much higher than values of Ni81Fe19/Si(001) heterostructures withTaranging from 200°C to 400°C.


2017 ◽  
Vol 121 (47) ◽  
pp. 26465-26471 ◽  
Author(s):  
Mewlude Imam ◽  
Laurent Souqui ◽  
Jan Herritsch ◽  
Andreas Stegmüller ◽  
Carina Höglund ◽  
...  

1991 ◽  
Vol 6 (11) ◽  
pp. 2393-2396 ◽  
Author(s):  
Vladimir Pavlović ◽  
Horst-Rainer Kötter ◽  
Christoph Meixner

Chemical vapor deposition (CVD) of boron nitride (BN) is most readily performed using BCl3 and NH3, which are brought into the deposition zone through two separate tubes. This causes some problems: inadequate mixing leading to a nonuniform deposit, formation of solid intermediates, etc. To avoid these problems, the process was performed by mixing BCl3 and NH3 at elevated temperatures (120–220 °C) prior to entering the deposition zone. The reaction between them took place by the forming of volatile stoichiometric B–N compounds (trichloroborazine and iminochloroborane), which were then transported through a single tube into a deposition zone. The resulting deposit was found to be hexagonal boron nitride.


Author(s):  
Sebastian Grimm ◽  
Seung-Jin Baik ◽  
Patrick Hemberger ◽  
Andras Bodi ◽  
Andreas Kempf ◽  
...  

Although aluminium acetylacetonate, Al(C5H7O2)3, is a common precursor for chemical vapor deposition (CVD) of aluminium oxide, its gas phase decomposition is not very well investigated. Here, we studied its thermal...


2021 ◽  
Author(s):  
Omar D. Jumaah ◽  
Yogesh Jaluria

Abstract Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are determined by the thermal transport processes and chemical reactions occurring in the reactor, and are manipulated by controlling the operating conditions and the reactor geometrical configuration. In this study, the epitaxial growth of GaN thin films on sapphire (AL2O3) substrates is carried out in two commercial MOCVD systems. This paper focuses on the composition of the precursor and the carrier gases, since earlier studies have shown the importance of precursor composition. The results show that the flow rate of trimethylgallium (TMG), which is the main ingredient in the process, has a significant effect on the deposition rate and uniformity of the films. Also the carrier gas plays an important role in deposition rate and uniformity. Thus, the use of an appropriate mixture of hydrogen and nitrogen as the carrier gas can improve the deposition rate and quality of GaN thin films.


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