Method of GaAs Growth on Single Crystal Si Substrate

1992 ◽  
Vol 263 ◽  
Author(s):  
Valery V. Dorogan ◽  
V.A. Kosyak ◽  
V.G. Trofim
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Temperature Gradients ◽  
Si Substrate ◽  
Island Growth ◽  
Si Substrates ◽  
Epitaxial Deposition ◽  
Substrate Dissolution

ABSTRACTIn the proposed method space and time temperature gradients are used for GaAs epitaxial deposition on Si substrates from liquid phase. Minimal Si substrate dissolution and preferential GaAs deposition from the liquid phase on Si substrate can be obtained by selecting dissolvents, requiring necessary gradients temperature values and times of active phases interaction. Because of nonuniformities in the etched Si substrate surface act as crystallization centres, the deposition process begins from GaAs island growth. Due to the dominate tangential growth rate, the separate single crystals coalesce into a GaAs monolayer.

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

Control of Iron Disilicide Crystal Structure by Using Liquid Phase Obtained by Au-Si Eutectic Reaction

2015 ◽  
Vol 1760 ◽  
Author(s):  
Kensuke Akiyama ◽  
Yuu Motoizumi ◽  
Hiroshi Funakubo
Keyword(s):  
Liquid Phase ◽  
Photoluminescence Spectrum ◽  
Radiative Recombination ◽  
Single Phase ◽  
Eutectic Reaction ◽  
Substrate Surface ◽  
Low Density ◽  
Si Substrate ◽  
High Quality ◽  
Iron Disilicide

ABSTRACTThe Au-Si liquid phase was obtained by melting the Si surface via Au-Si eutectic reaction, which contributed to the formation of semiconducting iron disilicide (β-FeSi2), on Au-coated Si(100) substrates. By coating a substrate with an Au layer of 60 nm or more, the Au-Si liquid phase covered the entire Si substrate surface, and single-phase β-FeSi2 was grown on Si(100) substrates. A clear photoluminescence spectrum of β-FeSi2 indicated the formation of high-quality crystals with a low density of the non-radiative recombination center in the grains.

Formation Mechanism of Epitaxial CoSi2 Films on (001) Si Using Ti-Co Bimetallic Layer Source Materials

1992 ◽  
Vol 280 ◽  
Author(s):  
S. L. Hsia ◽  
T. Y. Tana ◽  
P. L. Smith ◽  
G. E. Mcguire
Keyword(s):  
Film Formation ◽  
Substrate Surface ◽  
Native Oxide ◽  
Formation Processes ◽  
Mechanism Of Formation ◽  
Si Substrate ◽  
Barrier Material ◽  
Si Substrates ◽  
Bimetallic Layer ◽  
Source Materials

ABSTRACTThe mechanism of formation of epitaxial CoSi2 film on (001) Si substrate, produced using sequentially deposited Ti-Co bimetallic layer source materials for which Ti was deposited onto the Si substrates first, has been studied by observing the Co silicide formation processes and structures in samples prepared by isochronal annealing and by isothermal annealing. The results demonstrated that, in leading to epitaxial CoSi2 film formation, Ti has played two roles. It has served as a barrier material to Co atoms and thus preventing Co2Si from forming. More importantly, it has allowed nucleation and growth of epitaxial-CoSi2 to dominate the Co silicide film formation process, apparently because it has served as a cleanser to remove native oxide from the Si substrate surface.

MBE Growth of Epitaxial Calcium Fluoride on Silicon

1985 ◽  
Vol 54 ◽  
Author(s):  
L. J. Schowalter ◽  
R. W. Fathauer
Keyword(s):  
Epitaxial Growth ◽  
Detrimental Effect ◽  
Lattice Structure ◽  
Substrate Surface ◽  
Breakdown Field ◽  
Si Substrate ◽  
Semiconductor Interface ◽  
Mbe Growth ◽  
Si Substrates ◽  
Breakdown Field Strength

ABSTRACTThe growth of an epitaxial insulator such as CaF2. on Si substrates and ita subsequent overgrowth with epitaxial sen iconduct ors have a number of important applications in the electronics industry. In addition, it presents a unique opportunity to study an insulator/semiconductor interface under controlled conditions. We have studied the growth of epitaxial CaF. on Si substrates and their subsequent overgrowth with Si or Ge under various conditions. While epitaxial growth of CaF2, (which has an fee lattice structure as does Si) can be obtained on (100), (110) and (111) oriented Si substrates, the best quality crystal growth and surface morphology is obtained on (111) substrates as the CaF. (111) surface has the lowest free energy. Atomic steps on the original Si substrate surface are shown to have a detrimental effect on the epitaxial growth of CaF2. I-V measurements on the epitaxial (111) films show that the intrinsic breakdown field strength exceeds 2 MV/cm, however, high-field induced ionization can cause thermal breakdown at lower voltages. C-V measurements typically show ∼1012 states/cm in the Si band gap as grown. However, it is possible to reduce this number to less than 10 by annealing procedures after growth.

Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane

2010 ◽  
Vol 645-648 ◽  
pp. 147-150 ◽  
Author(s):  
Eiji Saito ◽  
Sergey Filimonov ◽  
Maki Suemitsu
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Growth Temperature ◽  
High Rate ◽  
Si Substrate ◽  
Single Crystalline ◽  
Step Process ◽  
Si Substrates ◽  
Sic Film

Temperature dependence of the growth rate of 3C-SiC(001) films on Si(001) substrates during ultralow-pressure (ULP: ~10-1 Pa) CVD using monomethylsilane has been investigated in detail by using pyrometric interferometry. A novel behavior, i.e. a sharp division of the growth mode into two regimes depending on the growth temperature, has been found to exist. Based on this finding, we have developed a two-step process, which realizes a low-temperature (900 °C), high-rate growth of single-crystalline 3C-SiC film on Si substrates, whose rate of 3 m/h is extremely high for this ULP process.

scholarly journals Liquid phase epitaxy set-up designed for in situ X-ray study of SiGe island growth on (001) Si substrates

2008 ◽  
Vol 43 (12) ◽  
pp. 1278-1285 ◽  
Author(s):  
Th. Teubner ◽  
U. Jendritzki ◽  
K. Böttcher ◽  
G. Schadow ◽  
R. Heimburger ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Island Growth ◽  
X Ray ◽  
Si Substrates ◽  
Set Up

Laser Direct Writing of Aluminum Conductor Lines from a Liquid Phase Precursor

1995 ◽  
Vol 397 ◽  
Author(s):  
Qijun Chen ◽  
Susan D. Allen
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Dwell Time ◽  
Nonlinear Heat Equation ◽  
Direct Writing ◽  
Experimental Conditions ◽  
Vertical Growth ◽  
Si Substrates ◽  
Vertical Growth Rate ◽  
Phase Precursor

ABSTRACTAluminum conductor lines were deposited on Si substrates from liquid phase triisobutylaluminum (TIBA) using a scanned argon ion laser. The vertical growth rate of Al lines initially increased, then decreased with increasing dwell time. The maximum vertical growth rate occurred at a particular dwell time depending upon the laser power. Lower vertical growth rates at longer dwell times are propably caused by the depletion of the reactant at the reaction site. A volcano deposit shape was observed, which became more pronounced as dwell time increased. The conductivity of the as-deposited Al lines decreased with increasing dwell time for our experimental conditions. To study the deposition kinetics and calculate the activation energy, the temperature rise on the Si surface was calculated by solving the nonlinear heat equation using finite difference method.

scholarly journals High-Selectivity Growth of GaN Nanorod Arrays by Liquid-Target Magnetron Sputter Epitaxy

Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 719
Author(s):  
Elena Alexandra Serban ◽  
Aditya Prabaswara ◽  
Justinas Palisaitis ◽  
Per Ola Åke Persson ◽  
Lars Hultman ◽  
...  
Keyword(s):  
Growth Rate ◽  
Focused Ion Beam ◽  
High Selectivity ◽  
Ion Beam ◽  
Substrate Surface ◽  
Growth Control ◽  
High Growth ◽  
Si Substrates ◽  
Surface Diffusivity ◽  
Magnetron Sputter

Selective-area grown, catalyst-free GaN nanorod (NR) arrays grown on Si substrates have been realized using liquid-target reactive magnetron sputter epitaxy (MSE). Focused ion beam lithography (FIBL) was applied to pattern Si substrates with TiNx masks. A liquid Ga target was sputtered in a mixture gas of Ar and N2, ranging the N2 partial pressure (PN₂) ratio from 100% to 50%. The growth of NRs shows a strong correlation with PN₂ on the selectivity, coalescence, and growth rate of NRs in both radial and axial directions. The growth rate of NRs formed inside the nanoholes increases monotonically with PN₂. The PN₂ ratio between 80% and 90% was found to render both a high growth rate and high selectivity. When the PN₂ ratio was below 80%, multiple NRs were formed in the nanoholes. For a PN₂ ratio higher than 90%, parasitic NRs were grown on the mask. An observed dependence of growth behavior upon the PN₂ ratio is attributed to a change in the effective Ga/N ratio on the substrate surface, as an effect of impinging reactive species, surface diffusivity, and residence time of adatoms. The mechanism of NR growth control was further investigated by studying the effect of nanoholes array pitch and growth temperature. The surface diffusion and the direct impingement of adatoms were found to be the dominant factors affecting the lateral and axial growth rates of NR, respectively, which were well elucidated by the collection area model.

scholarly journals Influence of Si Substrate Preparation Procedure on Polarity of Self-Assembled GaN Nanowires on Si(111): Kelvin Probe Force Microscopy Studies

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1904
Author(s):  
Marta Sobanska ◽  
Núria Garro ◽  
Kamil Klosek ◽  
Ana Cros ◽  
Zbigniew R. Zytkiewicz
Keyword(s):  
Surface Passivation ◽  
Substrate Surface ◽  
Kelvin Probe Force Microscopy ◽  
Ex Situ ◽  
Si Substrate ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Mixed Polarity

The growth of GaN nanowires having a polar, wurtzite structure on nonpolar Si substrates raises the issue of GaN nanowire polarity. Depending on the growth procedure, coexistence of nanowires with different polarities inside one ensemble has been reported. Since polarity affects the optical and electronic properties of nanowires, reliable methods for its control are needed. In this work, we use Kelvin probe force microscopy to assess the polarity of GaN nanowires grown by plasma-assisted Molecular Beam Epitaxy on Si(111) substrates. We show that uniformity of the polarity of GaN nanowires critically depends on substrate processing prior to the growth. Nearly 18% of nanowires with reversed polarity (i.e., Ga-polar) were found on the HF-etched substrates with hydrogen surface passivation. Alternative Si substrate treatment steps (RCA etching, Ga-triggered deoxidation) were tested. However, the best results, i.e., purely N-polar ensemble of nanowires, were obtained on Si wafers thermally deoxidized in the growth chamber at ~1000 °C. Interestingly, no mixed polarity was found for GaN nanowires grown under similar conditions on Si(111) substrates with a thin AlOy buffer layer. Our results show that reversal of nanowires’ polarity can be prevented by growing them on a chemically uniform substrate surface, in our case on clean, in situ formed SiNx or ex situ deposited AlOy buffers.

Horizontal Defects Parallel to the Interface in GaN Pyramids

1999 ◽  
Vol 5 (S2) ◽  
pp. 734-735
Author(s):  
Zhigang Mao ◽  
Stuart McKernan ◽  
C. Barry Carte ◽  
Wei Yang ◽  
Scott A. McPherson
Keyword(s):  
Defect Density ◽  
Low Cost ◽  
Substrate Surface ◽  
Optoelectronic Devices ◽  
Limited Information ◽  
Si Substrate ◽  
Si Substrates ◽  
Lateral Overgrowth ◽  
Large Size ◽  
Window Area

The performance of III-V nitride-based microelectronic and optoelectronic devices relates directly to the micro structure of these materials. Selective lateral overgrowth has been exploited to produce GaN heteroepitaxial films with low defect density [1]. Si is a promising substrate due to its low cost, large size, and the potential for the intergration of GaN-based optoelectronic devices with Si-based electronics. It is also possible to produce high-quality GaN material for devices using lateral overgrowth on a Si substrate [2]. At present, only limited information on the defect structure in GaN heteroepitaxial films grown by selective lateral growth is available, especially those grown on Si substrate. Recent work [3] on GaN pyramids grown on (111) Si substrates by this method has shown that in the center, or core, of the GaN pyramid (at and above the window area) dislocations thread through the pyramid nearly perpendicular to the substrate surface and the dislocation density is quite high.

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