In-Situ Scanning Electron Microscope Observations of Strain-Confined Lithium Nucleation at Electrode/Electrolyte Interfaces in All-Solid-State-Lithium Battery

2015 ◽  
Vol 1754 ◽  
pp. 25-30
Author(s):  
Munekazu Motoyama ◽  
Makoto Ejiri ◽  
Yasutoshi Iriyama
Keyword(s):  
Current Density ◽  
High Current Density ◽  
Amorphous Solid ◽  
Number Density ◽  
Cu Film ◽  
Small Cracks ◽  
Current Densities ◽  
A Current ◽  
Scanning Electron

ABSTRACTWe have studied electrochemical Li deposition/dissolution processes at amorphous solid electrolyte (LiPON) interfaces with 30-nm-thick-Cu-current collectors at different current densities by in-situ scanning electron microscopy (SEM). When the current density is smaller than 300 μA cm−2, Li islands continue to grow under a Cu film without coalescing with their neighbors. Consequently, they produce small cracks in the Cu film leading to isolated Li rod growth from the cracks. On the other hand, a current density of 1.0 mA cm−2 provokes the nucleation of Li islands with a higher number density. They rapidly coalesce under a Cu film in all lateral directions before cracking the Cu film. High current density conditions therefore suppress Li rod growths.

Electromigration Reliability of Electroplated Gold Interconnects

2014 ◽  
Vol 1692 ◽  
Author(s):  
Steve H. Kilgore ◽  
Dieter K. Schroder
Keyword(s):  
Current Density ◽  
Open Circuit ◽  
Constant Current ◽  
Measured Temperature ◽  
Lifetime Distributions ◽  
Current Densities ◽  
Log Normal ◽  
Equipment Application ◽  
A Current

ABSTRACTThe electromigration lifetimes of a very large quantity of passivated electroplated Au interconnects were measured utilizing high-resolution in-situ resistance monitoring equipment. Application of moderate accelerated stress conditions with current density limited to 2 MA/cm2 and oven temperatures in the range of 300°C to 375°C prevented large Joule-heated temperature gradients and electrical overstress failures. A Joule-heated Au film temperature increase of 10°C on average was determined from measured temperature coefficients of resistance (TCRs). A failure criterion of 50% resistance degradation was selected to avoid thermal runaway and catastrophic open circuit failures. All Au lifetime distributions followed log-normal statistics. An activation energy of 0.80 ± 0.05 eV was measured from constant-current electromigration tests at multiple temperatures. A current density exponent of 1.91 ± 0.03 was extracted from multiple current densities at a single constant temperature.

Facet Topography and Dislocation Structure as a Possible Source for Electrical Heterogeneity in [001] TILT Bicrystals of YBa2Cu3O7-δ

1996 ◽  
Vol 54 ◽  
pp. 338-339
Author(s):  
I-Fei Tsu ◽  
D.L. Kaiser ◽  
S.E. Babcock
Keyword(s):  
Grain Boundary ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Electromagnetic Properties ◽  
Length Scale ◽  
Density Values ◽  
Current Densities ◽  
Applied Fields ◽  
A Current

A current theme in the study of the critical current density behavior of YBa2Cu3O7-δ (YBCO) grain boundaries is that their electromagnetic properties are heterogeneous on various length scales ranging from 10s of microns to ˜ 1 Å. Recently, combined electromagnetic and TEM studies on four flux-grown bicrystals have demonstrated a direct correlation between the length scale of the boundaries’ saw-tooth facet configurations and the apparent length scale of the electrical heterogeneity. In that work, enhanced critical current densities are observed at applied fields where the facet period is commensurate with the spacing of the Abrikosov flux vortices which must be pinned if higher critical current density values are recorded. To understand the microstructural origin of the flux pinning, the grain boundary topography and grain boundary dislocation (GBD) network structure of [001] tilt YBCO bicrystals were studied by TEM and HRTEM.

scholarly journals Nanocrystalline TiO2Electrodes Exhibiting High Storage Capacity and Stability in Rechargeable Lithium Batteries

1995 ◽  
Vol 18 (1) ◽  
pp. 23-30 ◽  
Author(s):  
Sui-Yang Huang ◽  
Ladislav Kavan ◽  
Andreas Kay ◽  
Michael Grätzel ◽  
Ivan Exnar
Keyword(s):  
Current Density ◽  
High Current Density ◽  
Discharge Voltage ◽  
Unit Weight ◽  
Nanocrystalline Films ◽  
Rechargeable Lithium Batteries ◽  
Capacity Loss ◽  
High Storage Capacity ◽  
First Time ◽  
A Current

Nanocrystalline TiO2films were explored for the first time as electrode material for a rechargeable lithium intercalation cell, i.e., Li/LiCF3SO3+ PC/TiO2. Two kinds of nanocrystalline films, TiO2F387 (Degussa) and TiO2colloid-240, were investigated. These films exhibited excellent performance renderings them a promising choice for secondary battery applications. At a current density of 0.01 mA/cm2, two voltage plateaus at 1.78 and 1.89 V were observed for TiO2F387 films during charge and discharge, respectively. The TiO2electrode charge capacity per unit weight rose with decreasing current density. The highest capacity, obtained at a current density of 0.005 mA/cm2and a final discharge voltage of 1.4 V, was 265 mAh/g corresponding to a lithium insertion ratio ofx= 0.8. Nanocrystalline TiO2colloid-240 films showed a similar performance. The cycle life of a TiO2colloid-240 cell at a high current density was found to be excellent; a capacity loss lower than 14% has been observed over 100 charge/discharge cycles.

High Current Density Effect on In-situ Atomic Migration Characteristics of a BiTe Thin Film System

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC06
Author(s):  
Seunghyun Kim ◽  
Yong-Jin Park ◽  
Young-Chang Joo ◽  
Young-Bae Park
Keyword(s):  
Thin Film ◽  
Current Density ◽  
High Current Density ◽  
Density Effect ◽  
Film System ◽  
High Current ◽  
Thin Film System

Sample Preparation of Aluminum Bridge Test Vehicles for Tem In-Situ Crystallographic Studies of Electromigration

1987 ◽  
Vol 115 ◽  
Author(s):  
W. E. Rhoden ◽  
J. V. Maskowitz ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Circuit Reliability ◽  
Test Vehicle ◽  
Aluminum Films ◽  
Current Densities ◽  
Integrated Circuit Reliability ◽  
A Current

IntroductionElectromigration in aluminum films has been identified as an increasing concern for integrated circuit reliability. Electromigration is the mass transport of atoms in a conductor under a current stress. Electromigration occurs in conductors experiencing current densities greater than 105 A/cm2 and is accelerated by high temperature. The damage to aluminum films manifests itself in the formation of voids, hillocks and whiskers along the conductor. This paper presents a test vehicle preparation procedure which can be used to investigate electromigration.

Polyaniline: Influence of Polymerization Current Density

1994 ◽  
Vol 369 ◽  
Author(s):  
Steen Skaarup ◽  
L.M.W.K. Gunaratne ◽  
Keld West ◽  
Birgit Zachau-Christiansen
Keyword(s):  
Cyclic Voltammetry ◽  
Current Density ◽  
High Current Density ◽  
Electrochemical Polymerization ◽  
Regular Structure ◽  
Spectral Lines ◽  
Complex Nature ◽  
Cyclic Voltammograms ◽  
Layer By Layer ◽  
Current Densities

AbstractPolyaniline has been synthesized in propylene carbonate by galvanostatic electrochemical polymerization at current densities between 16 and 1000 μA/cm2. Earlier results for polypyrrole have shown that low and high current density films have different properties: The films synthesized at low current density have a higher conjugation length and a more regular structure. The corresponding effect in PANI has been investigated by cyclic voltammetry and UV/visible spectroscopy. Simultaneous measurement of cyclic voltammograms and the absorbtion of selected spectral lines is used because of the complex nature of the PANI system which involves several redox systems as well as forms differing in the degree of protonation and morphology.The main result is that the method of galvanostatic synthesis at low current densities (-16 μA/cm2) produces polyaniline polymers of different, more conjugated and more regular structure than those prepared at higher current densities. The standard method of in situ layer-by-layer polymerization of conducting polymers during cyclic voltammetry often results in uncontrolled and unmeasured current densities of 0.5-2 mA/cm2 which produces a film that probably has a less regular structure containing more deviations from ideality.

Electromigration Phenomena in Sintered Nanoparticle Ag Systems Under High Current Density

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000059-000063
Author(s):  
Ali Mansourian ◽  
Seyed Amir Paknejad ◽  
Qiannan Wen ◽  
Khalid Khtatba ◽  
Anatoly Zayats ◽  
...  
Keyword(s):  
High Current Density ◽  
Composition Studies ◽  
Void Formation ◽  
Sintering Process ◽  
Number Density ◽  
Momentum Exchange ◽  
Conduction Electrons ◽  
Fine Grained ◽  
Aspect Ratios ◽  
Current Densities

Electromigration (EM) refers to the movement of atoms inside a conductor due to momentum exchange with the conduction electrons. In this work the EM effect in samples of porous Ag fabricated from nanoparticles of Ag in a pressure free sintering process is studied. Current densities of 2.5×104 − 1.7×105 A/cm2 were applied to the samples for periods ranging up to 500 h. In a typical EM setup with a non-porous conductor, void formation occurs at the cathode and hillock formation at the anode. In this study, voids were not directly observed, but cracks were formed after prolonged electromigration, presumably as a result of void accumulation and coalescence. When the samples were placed in 150 °C ambient no hillocks were observed, but at room temperature nanorods were formed with sizes ranging up to 20 μm in length, typically 25 nm in diameter and with aspect ratios ranging from 20 to 1000. It was found that interrupting and restarting the current resulted in growth of new nanorods rather than growth of existing ones, and that growth was limited by welding of individual nanorods when a critical number density was reached. While similar nanorods have been formed from Ag thin films using thermal stress , the location of nanorods was unusual in that while the number density was highest at the anode, significant numbers also appeared at central and cathode locations. Another unusual feature of the observed EM was that the initial porous structure became refined with coarse pores and grains transforming into a fine grained and fine pored structure with elongated and locally orientated pores and grains. Elemental composition studies provide tentative understanding of the nanorod number density, size distribution and growth mechanism. In the geometry utilized for this study, temperature gradients are known to strongly influence the divergence of the EM induced atomic flux and hence resistivity measurements and COMSOL Finite Element modelling was used to determine the temperature in the sample taking into account joule heating, convection and conduction processes.

Formation of Buried Sio2 By High Dose Implantation of Oxygen at Room and Liquid Nitroeen Temperatures

1985 ◽  
Vol 53 ◽  
Author(s):  
F. Namavar ◽  
J. I. Budnick ◽  
F. H. Sanchez ◽  
H. C. Hayden
Keyword(s):  
Liquid Nitrogen ◽  
Current Density ◽  
Room Temperature ◽  
Rutherford Backscattering ◽  
High Dose ◽  
Crystalline Quartz ◽  
Oxygen Ions ◽  
High Dose Implantation ◽  
A Current

ABSTRACTWe have carried out a study to understand the mechanisms involved in the formation of buried SIO2 by high dose implantation of oxygen into Si targets. Oxygen ions were implanted at 150 keV with doses up to 2.5 X 1018 ions/cm2 and a current density of less than 10 μA/cm2 into Si 〈100〉 at room and liquid nitrogen temperatures. In-situ Rutherford backscattering (RBS) analysis clearly indicates the formation of uniform buried SIO2 for both room and liquid nitrogen temperatures for doses above 1.5 X 1018/cm2.Oxygen ions were implanted at room temperature into crystalline quartz to doses of about 1018 ions cm2 at 150 keV, with a current density of 〈10〉10 μA/cm2. The RBS spectra of the oxygen implanted quartz cannot be distinguished from those of unimplanted ones. Furthermore, Si ions were implanted into crystalline quartz at 80 keV and dose of 1 X 1017 Si/cm2, and a current aensity of about 1 μA/cm2. However, no signal from Si in excess of the SiO2 ratio could be observed. Our results obtained by RBS show that implantation of either Si+ or O into SiO2 under conditions stated above does not create a layer whose Si:O ratio differs measurably from that of SiO2.

In situ topotactic synthesis of a porous network Zn2Ti3O8 platelike nanoarchitecture and its long-term cycle performance for a LIB anode

CrystEngComm ◽  
2018 ◽  
Vol 20 (45) ◽  
pp. 7329-7336 ◽  
Author(s):  
Xingang Kong ◽  
Xing Wang ◽  
Dingying Ma ◽  
Jianfeng Huang ◽  
Jiayin Li ◽  
...  
Keyword(s):  
Ion Exchange ◽  
Exchange Reaction ◽  
Current Density ◽  
Cycle Performance ◽  
Porous Network ◽  
Ion Exchange Reaction ◽  
Topotactic Transformation ◽  
A Current

Porous network Zn2Ti3O8 platelike nanoarchitecture was prepared by an ion exchange reaction and further in situ topotactic transformation, and it exhibited an enhanced reversibility capacity of 408 mA h g−1 after 1000 cycles at a current density of 1 Ag−1.

Sign in / Sign up

Export Citation Format

Share Document