Tribological Properties of Sputter-Deposited MoS2 Films Containing Titanium

2005 ◽  
Vol 890 ◽  
Author(s):  
James Krzanowski ◽  
Dyumani Nunna
Keyword(s):  
Tribological Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Frictional Properties ◽  
Crystalline Films ◽  
Low Humidity ◽  
Sputter Deposited ◽  
Pin On Disk ◽  
Deposited Films ◽  
Ti Films

ABSTRACTThe tribological properties of sputter-deposited MoS2 and MoS2-Ti films were investigated in this study. The deposited films were characterized using microprobe analysis for composition and x-ray diffraction (XRD) for structure. The frictional properties of the films were examined using a pin-on-disk (POD) with counterfaces of 440C steel, aluminum, tungsten carbide and alumina. The tests were run under low (25%), medium (50%) and high (70%) humidity levels. MoS2 films without Ti were first examined under cyclic humidity conditions between 25 and 50% R/H. The results showed that for steel, WC and alumina counterfaces, the effect of the higher humidity was to increase the friction, but lower friction could be recovered when the humidity was reduced back to 25%. For films containing Ti, the best results were obtained at a concentration of 20 at. % Ti. These films performed well for steel and WC counterfaces, but poorly against aluminum. The effect of deposition temperature (up to 450oC) was examined for MoS2 and MoS2-5% Ti films. Higher temperatures yielded more crystalline films, but the addition of Ti partially countered this effect. The POD test showed that at medium humidity levels the friction decreased with temperature, but increased slightly when tested under low humidity. In all cases, the 5% Ti-containing films had a fiction coefficient of about 0.1 below that for films without Ti.

Aging Effects on the Durability of Tantalum Nitride Films

1997 ◽  
Vol 505 ◽  
Author(s):  
N. R. Moody ◽  
D. Medlin ◽  
D. Boehme ◽  
D. Norwood
Keyword(s):  
Sputter Deposition ◽  
Tantalum Nitride ◽  
X Ray Diffraction ◽  
Aging Effects ◽  
Subsequent Aging ◽  
X Ray ◽  
Sputter Deposited ◽  
Compressive Residual Stresses ◽  
Deposited Films

ABSTRACTIn this study, nanoindentation and nanoscratch testing were used to determine the effects of annealing and long term aging on the properties and fracture resistance of thin tantalum nitride resistor films on aluminum nitride substrates. These films were sputter-deposited to a thickness of 440 nm. Some films were left in the as-deposited condition while others were annealed or annealed and then aged. X-ray diffraction revealed that sputter deposition created high compressive residual stresses in the as-deposited films which were partially relieved by annealing. Subsequent aging of the annealed films had no effect on residual stress levels. Nanoindentation showed that mechanical properties were unchanged after annealing and after annealing and aging. However, nanoscratch testing showed that annealing markedly reduced the susceptibility to catastrophic failure with no further changes discernible after aging.

RBS and TEM Analysis of Ta Silicides on GaAs

1983 ◽  
Vol 25 ◽  
Author(s):  
K.L. Kavanagh ◽  
S.H. Chen ◽  
C.J. Palmstrom ◽  
C.B. Carter
Keyword(s):  
Electron Beam ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Cross Sectional ◽  
X Ray ◽  
Sputter Deposited ◽  
Deposited Films

ABSTRACTElectron-beam and sputter-deposited Ta silicides on GaAs were annealed in an As2 overpressure ambient to temperatures as high as 920°C for 20mim. The films were then characterized with RBS, cross-sectional TEM and both electron and x-ray diffraction. The morphology of sputtered TaSi2/GaAs interfaces did not change, however, some interaction was detected at electron-beam deposited GaAs/silicide interfaces. Arsenic in-diffusion was detected at temperatures above 800°C and it was found to be dependent on the stoichiometry of the films. Arsenic diffusion into Si-rich electron-beam and sputter deposited films was low, whereas significantly more As diffused into the Ta-rich silicide. Some indium (3×l015atoms/cm2), from the InAs used as the source of As2overpressure, was observed to accumulate at all GaAs/silicide interfaces at temperatures above 800°C.

Effect of Annealing on Microstructure and Properties of Al-Ti Multilayered Films

1999 ◽  
Vol 594 ◽  
Author(s):  
R. Mitra ◽  
A. Madan ◽  
R. A. Hoffman ◽  
W. A. Chiou ◽  
J. R. Weertman
Keyword(s):  
Cross Section ◽  
Size Distributions ◽  
X Ray Diffraction ◽  
Particle Size Distributions ◽  
Multilayered Films ◽  
Plan View ◽  
X Ray ◽  
Ti Particles ◽  
Deposited Films ◽  
Ti Films

AbstractAl-Ti multilayered films were deposited by magnetron sputtering of Al and Ti targets on to Si (100) or NaCl substrates. The bi-layer thickness was 16 nm with Ti constituting 12% of the total thickness. The films were subsequently annealed in vacuum at 400°C for periods between 2 and 24 h. In the course of the annealing, interdiffusion and chemical reaction between Al and Ti layers led to the precipitation of Al3Ti particles. Plan view and cross-section TEM examination of as-deposited and annealed films were performed to study the microstructural evolution, and to estimate the Al grain and AI3Ti particle size distributions. Cross-section TEM and X-ray diffraction showed a well-defined layered structure in the as-deposited films. The microstructure was found to be metastable in the first 6 h of annealing, with Al-Ti multilayers being gradually replaced by an AI-AI3Ti composite structure. The Al3Ti particles were uniformly distributed throughout the film. X-ray and electron diffraction analyses showed that Al3Ti possessed the ordered DO22 structure. The hardness of the Al-Ti films in as-deposited and annealed conditions was determined using a nanoindenter and the data have been correlated with the microstructural changes with annealing.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

Colossal Magnetoresistance in Thick La0.7Ca0.3MnO3 Films

1995 ◽  
Vol 384 ◽  
Author(s):  
Randolph E. Treece ◽  
P. Dorsey ◽  
M. Rubinstein ◽  
J. M. Byers ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Colossal Magnetoresistance ◽  
Single Phase ◽  
Laser Deposition ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Mr Effect ◽  
Deposited Films ◽  
Post Deposition

ABSTRACTThick films (0.6 and 2.0 μm) of the colossal magnetoresistance (CMR) material, La0.7Ca0.3MnO3 (LCMO), have been grown by pulsed laser deposition (PLD). The films were grown from single-phase LCMO targets in 100 mTorr 02 pressures and the material deposited on (100) LaAlO3 substrates at deposition temperatures of 800°C. The deposited films were characterized by X-ray diffraction (XRD), magnetic field-dependent resistivity, and Rutherford backscattering spectroscopy (RBS). The LCMO films were shown by XRD to adopt an orthorhombic structure. Brief post-deposition annealing led to ~50,000% and ~12,000% MR effect in the 0.6 μm and 2.0 μm films, respectively.

NbN Thin Film of Alternating Textures

2017 ◽  
Vol 898 ◽  
pp. 1431-1437
Author(s):  
Hong Yang Shao ◽  
Kan Zhang ◽  
Yi Dan Zhang ◽  
Mao Wen ◽  
Wei Tao Zheng
Keyword(s):  
Deposition Time ◽  
Peak Position ◽  
Preferred Orientation ◽  
Intrinsic Stress ◽  
Competitive Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Orientation Distributions ◽  
Different Thickness ◽  
Deposited Films

The δ-NbN thin films with different thickness have been prepared by reactive magnetron sputtering at different deposition time and exhibited alternating textures between (111) and (200) orientations as a function of thickness. In addition, the grain size, peak position, morphology, residual stress and orientation distributions of the deposited films were explored by X-ray diffraction, low-angel X-ray reflectivity, scanning electron microscopy and surface profiler. The film deposited at 300 s showed a (111) preferred orientation, changing to (200) preferred orientation at 600 s, and exhibited alternating textures between (111) and (200) preferred orientations. With further increasing deposition time, in which (200) peak position and the full width at half maximum of (111) peak also displayed a trend of alternating variation with varying deposition time. The intrinsic stress for δ-NbN films calculated by Stoney equation alternately changed with alternating textures, in which (111) orientation always takes place at relatively high intrinsic stress state and vice versa. Meanwhile, the film with (111) preferred orientation showed higher density than (200) preferred orientation. The film deposited at 4800 s owned a mixed texture of (111) and (200), showing an anisotropy distribution of (111)-oriented and (200)-oriented grains, while film deposited at 7200 s owned a strong (200) texture, displaying an isotropy distribution of (200)-oriented grains. The competitive growth between (111)-oriented and (200)-oriented grains was responsibility for alternating texture.

Microstructure and Tribological Properties of Cu-Fe Based Braking Materials

2014 ◽  
Vol 941-944 ◽  
pp. 280-283
Author(s):  
Xiao Yang Wang ◽  
Hong Qiang Ru
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Tribological Properties ◽  
X Ray Diffraction ◽  
Pressing Method ◽  
X Ray ◽  
The Coefficient Of Friction ◽  
Worn Surface ◽  
Scanning Electron ◽  
Sic Particle

SiC particle-reinforced Cu-Fe based braking materials were fabricated by the P/M hot pressing method. The phase composition, microstructure and the worn surface of the composite were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD).The tribological properties were evaluated using a disk-on-disk type laboratory scale dynamometer. Results indicate that the friction coefficient is 0.42 in 6800rpm, 0.7MPa. With the increase of rotation speeds the coefficient of friction and stable rate were decreased.

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