RBS and TEM Analysis of Ta Silicides on GaAs

1983 ◽  
Vol 25 ◽  
Author(s):  
K.L. Kavanagh ◽  
S.H. Chen ◽  
C.J. Palmstrom ◽  
C.B. Carter
Keyword(s):  
Electron Beam ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Cross Sectional ◽  
X Ray ◽  
Sputter Deposited ◽  
Deposited Films

ABSTRACTElectron-beam and sputter-deposited Ta silicides on GaAs were annealed in an As2 overpressure ambient to temperatures as high as 920°C for 20mim. The films were then characterized with RBS, cross-sectional TEM and both electron and x-ray diffraction. The morphology of sputtered TaSi2/GaAs interfaces did not change, however, some interaction was detected at electron-beam deposited GaAs/silicide interfaces. Arsenic in-diffusion was detected at temperatures above 800°C and it was found to be dependent on the stoichiometry of the films. Arsenic diffusion into Si-rich electron-beam and sputter deposited films was low, whereas significantly more As diffused into the Ta-rich silicide. Some indium (3×l015atoms/cm2), from the InAs used as the source of As2overpressure, was observed to accumulate at all GaAs/silicide interfaces at temperatures above 800°C.

GaxIn1-xP/GaP Heterostructures on Si(001) Substrate

1996 ◽  
Vol 441 ◽  
Author(s):  
N. Sukidi ◽  
N. Dietz ◽  
U. Rossow ◽  
K. J. Bachmann
Keyword(s):  
Compositional Analysis ◽  
Chemical Beam Epitaxy ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Temperature Growth ◽  
X Ray ◽  
Vegard’S Law ◽  
Graded Interlayer ◽  
Source Materials

AbstractIn this contribution we report on the real-time monitoring of low temperature growth of epitaxial GaxIn1-xP/GaP heterostructures on Si(100) by pulse chemical beam epitaxy, using tertiary butylphosphine (TBP), triethylgallium (TEG), and trimethylindium (TMI) as source materials. Both step-graded and continuously graded heterostructures have been investigated. The composition of the GaxIn1-xP epilayers has been analyzed by various techniques including X-ray diffraction, Rutherford backscattering, Auger, and Raman spectroscopy. Good correlation has been found between X-ray diffraction, RBS, and Vegard's law compositional analysis. We used Ppolarized Reflectance Spectroscopy (PRS) and Laser Light Scattering (LLS) to monitor the growth rate and surface morphology during growth. The information gained by these techniques has been utilized in the improvement of the surface preconditioning as well as to optimize the initial heteroepitaxial nucleation and overgrowth process. We studied the optical response to the compositional changes in the surface reaction layer (SRL) during the exposure of the surface to either sequential or synchronous pulses of TEG and TMI. The cross sectional TEM analysis indicates that the synchronous exposure results in an abrupt GaxIn1-xP/GaP interface while the sequential exposure does not which may suggest a compositionally graded interlayer formation. For heteroepitaxial GaxIn1-xP films on Si, a buffer layer of GaP is found to be necessary for optimum uniformity of the GaxIn1-xP layer. The selective growth of GaxIn1-xP on Si(001) is accessed.

Aging Effects on the Durability of Tantalum Nitride Films

1997 ◽  
Vol 505 ◽  
Author(s):  
N. R. Moody ◽  
D. Medlin ◽  
D. Boehme ◽  
D. Norwood
Keyword(s):  
Sputter Deposition ◽  
Tantalum Nitride ◽  
X Ray Diffraction ◽  
Aging Effects ◽  
Subsequent Aging ◽  
X Ray ◽  
Sputter Deposited ◽  
Compressive Residual Stresses ◽  
Deposited Films

ABSTRACTIn this study, nanoindentation and nanoscratch testing were used to determine the effects of annealing and long term aging on the properties and fracture resistance of thin tantalum nitride resistor films on aluminum nitride substrates. These films were sputter-deposited to a thickness of 440 nm. Some films were left in the as-deposited condition while others were annealed or annealed and then aged. X-ray diffraction revealed that sputter deposition created high compressive residual stresses in the as-deposited films which were partially relieved by annealing. Subsequent aging of the annealed films had no effect on residual stress levels. Nanoindentation showed that mechanical properties were unchanged after annealing and after annealing and aging. However, nanoscratch testing showed that annealing markedly reduced the susceptibility to catastrophic failure with no further changes discernible after aging.

Interface Structure and Solid State Reactions of Fe/Zr Multilayers

1987 ◽  
Vol 103 ◽  
Author(s):  
Bruce M. Clemens ◽  
D. L. Williamson
Keyword(s):  
Electron Beam ◽  
Auger Spectroscopy ◽  
Interface Structure ◽  
Electron Beam Evaporation ◽  
Sputter Deposition ◽  
Solid State Reactions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited ◽  
Amorphous Phase Formation

ABSTRACTIron zirconium multilayer films were prepared by electron beam evaporation and by sputter deposition. Layer thicknesses were varied from 50 monolayers of each constituent down to 2 monolayers. Conversion electron Mössbauer spectroscopy, x-ray diffraction, and Auger spectroscopy have been used to characterize multilayers in the as-deposited and annealed state. Amorphous phase formation occurs during thermal anneals, and samples with layer thicknesses of 5 monolayers or less of each constituent are amorphous as deposited. Amorphous interfaces are observed in all samples, with this interface region being larger in the electron beam evaporated samples than in the sputter deposited samples.

Reaction Kinetics of Sputter-Deposited Ti On SiO2 Substrates during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
E.J. Yun ◽  
H.G. Chun ◽  
K. Jung ◽  
D.L. Kwong ◽  
S. Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Kinetics Of

ABSTRACTIn this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.

Tribological Properties of Sputter-Deposited MoS2 Films Containing Titanium

2005 ◽  
Vol 890 ◽  
Author(s):  
James Krzanowski ◽  
Dyumani Nunna
Keyword(s):  
Tribological Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Frictional Properties ◽  
Crystalline Films ◽  
Low Humidity ◽  
Sputter Deposited ◽  
Pin On Disk ◽  
Deposited Films ◽  
Ti Films

ABSTRACTThe tribological properties of sputter-deposited MoS2 and MoS2-Ti films were investigated in this study. The deposited films were characterized using microprobe analysis for composition and x-ray diffraction (XRD) for structure. The frictional properties of the films were examined using a pin-on-disk (POD) with counterfaces of 440C steel, aluminum, tungsten carbide and alumina. The tests were run under low (25%), medium (50%) and high (70%) humidity levels. MoS2 films without Ti were first examined under cyclic humidity conditions between 25 and 50% R/H. The results showed that for steel, WC and alumina counterfaces, the effect of the higher humidity was to increase the friction, but lower friction could be recovered when the humidity was reduced back to 25%. For films containing Ti, the best results were obtained at a concentration of 20 at. % Ti. These films performed well for steel and WC counterfaces, but poorly against aluminum. The effect of deposition temperature (up to 450oC) was examined for MoS2 and MoS2-5% Ti films. Higher temperatures yielded more crystalline films, but the addition of Ti partially countered this effect. The POD test showed that at medium humidity levels the friction decreased with temperature, but increased slightly when tested under low humidity. In all cases, the 5% Ti-containing films had a fiction coefficient of about 0.1 below that for films without Ti.

Effect of annealing and process parameters on microstructure and properties of DC Magnetron Sputtered Ni-Zr alloy thin films

MRS Advances ◽  
2017 ◽  
Vol 2 (27) ◽  
pp. 1441-1448 ◽  
Author(s):  
Bibhu P. Sahu ◽  
Rahul Mitra
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Scratch Resistance ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Atomic Force ◽  
Scratch Tests ◽  
Deposited Films ◽  
Zr Alloy

ABSTRACTNi-Zr alloy thin films were processed by DC magnetron sputtering of high purity Ni and Zr targets in ultrahigh vacuum at ambient temperature, with the substrate being subjected to either 0 V or -60 V bias. Some of the as-deposited films were annealed in vacuum at 700°C for 1 h. Surface profilometer and atomic force microscope were used to measure the film thickness and surface roughness, respectively. X-ray diffraction and cross-sectional TEM analysis have shown dispersion of nano-sized Ni3Zr dispersed in nanocrystalline Ni matrix. Nano-indentation and scratch tests conducted at 2 mN load have shown variation of hardness, Young′s modulus, scratch resistance, and coefficient of friction with substrate bias and annealing due to changes in grain size and surface roughness.

Investigation of TiN/TiSi2 Bilayer Thin Films on Si (100) Substrate

1995 ◽  
Vol 402 ◽  
Author(s):  
Y. Shor ◽  
J. Pelleg
Keyword(s):  
Layer Structure ◽  
Reactive Sputtering ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Tin Films ◽  
X Ray ◽  
Resistivity Measurements ◽  
Transmission Electron

AbstractIn this work the conditions of forming a bi – layer structure of TiN/TiSi2 thin film on Si (100) substrate is investigated. Two methods of producing this structure were used: a) Deposition of Ti on Si (100), followed by reactive sputtering to obtain TiN on top of this layer and b) codeposition of Ti and Si on Si (100) and then deposition of TiN by reactive sputtering. The reactive sputtering was carried out in a mixture of N2/Ar with 20% N2. This amount is believed to be optimal for obtaining good quality and stoichiometric TiN films. Annealing is essential to form TiSi2 and it was performed either in the sputtering chamber immediately after the deposition or by rapid thermal annealing (RTA). The structure of the specimens was analyzed by X-ray diffraction using step scanning, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). TEM analysis was done on cross sectional specimens and also electron diffraction results were recorded. Resistivity measurements were performed by four – point probe method. The influence of TiN on the silicide formation was established. The results indicate that in the presence of TiN the phase TiSi2 was obtained, but in its absence Ti5 Si3 is formed under the same conditions of deposition and annealing. The stress distribution was investigated by Hall – Williamson curves and it was found that TiN stabilizes the silicide film and no peeling was observed. The effectiveness of TiN as diffusion barrier against Al and Si penetration was tested at 500°C/lh. It was found, that under these conditions, the TIN/TiSi2 structure is about the same, as before the heat treatment. No Al penetration is observed.

X-ray micro tomography in the scanning electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 106-107 ◽  
Author(s):  
W. Brünger
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Target Surface ◽  
The Body ◽  
X Rays ◽  
Cross Sectional ◽  
X Ray ◽  
Micro Tomography ◽  
Scanning Electron

Reconstructive tomography is a new technique in diagnostic radiology for imaging cross-sectional planes of the human body /1/. A collimated beam of X-rays is scanned through a thin slice of the body and the transmitted intensity is recorded by a detector giving a linear shadow graph or projection (see fig. 1). Many of these projections at different angles are used to reconstruct the body-layer, usually with the aid of a computer. The picture element size of present tomographic scanners is approximately 1.1 mm2.Micro tomography can be realized using the very fine X-ray source generated by the focused electron beam of a scanning electron microscope (see fig. 2). The translation of the X-ray source is done by a line scan of the electron beam on a polished target surface /2/. Projections at different angles are produced by rotating the object.During the registration of a single scan the electron beam is deflected in one direction only, while both deflections are operating in the display tube.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

scholarly journals Multi-Scale Studies of 3D Printed Mn–Na–W/SiO2 Catalyst for Oxidative Coupling of Methane

Catalysts ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 290
Author(s):  
Tim Karsten ◽  
Vesna Middelkoop ◽  
Dorota Matras ◽  
Antonis Vamvakeros ◽  
Stephen Poulston ◽  
...  
Keyword(s):  
Oxidative Coupling ◽  
Oxidative Coupling Of Methane ◽  
Operating Conditions ◽  
Homogeneous Distribution ◽  
Silica Support ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Multi Scale ◽  
3D Printed

This work presents multi-scale approaches to investigate 3D printed structured Mn–Na–W/SiO2 catalysts used for the oxidative coupling of methane (OCM) reaction. The performance of the 3D printed catalysts has been compared to their conventional analogues, packed beds of pellets and powder. The physicochemical properties of the 3D printed catalysts were investigated using scanning electron microscopy, nitrogen adsorption and X-ray diffraction (XRD). Performance and durability tests of the 3D printed catalysts were conducted in the laboratory and in a miniplant under real reaction conditions. In addition, synchrotron-based X-ray diffraction computed tomography technique (XRD-CT) was employed to obtain cross sectional maps at three different positions selected within the 3D printed catalyst body during the OCM reaction. The maps revealed the evolution of catalyst active phases and silica support on spatial and temporal scales within the interiors of the 3D printed catalyst under operating conditions. These results were accompanied with SEM-EDS analysis that indicated a homogeneous distribution of the active catalyst particles across the silica support.

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