Modeling the Impact of Layout Variation on Process Stress in Cu/Low k Interconnects

2006 ◽  
Vol 914 ◽  
Author(s):  
Xiaopeng Xu ◽  
Dipu Pramanik ◽  
Greg Rollins
Keyword(s):  
Grain Growth ◽  
Growth Stress ◽  
Intrinsic Stress ◽  
Stress Model ◽  
Stress Concentrations ◽  
Metal Line ◽  
Mismatch Stress ◽  
The Impact ◽  
Low K ◽  
Process Stress

AbstractThe layout dependence of process stress in Cu/low k interconnects are examined using various stress sources and layout patterns. The anisotropic grain growth stress model is compared with the conventional isotropic intrinsic stress model and the latter is found to underestimate stress concentrations in the dielectric regions near metal line ends. Both the grain growth stress in copper and the thermal mismatch stress in copper and low k dielectrics are considered in the layout dependence study. The results demonstrate that accurate stress evaluation in interconnect structures has to employ geometrical models that include layout variations. Capabilities are developed to extract these geometrical models directly from layout analysis.

Effect of grain growth stress and stress gradient on stress-induced voiding in damascene Cu/low-k interconnects for ULSI

2006 ◽  
Vol 504 (1-2) ◽  
pp. 284-287 ◽  
Author(s):  
Jong-Min Paik ◽  
Il-Mok Park ◽  
Young-Chang Joo
Keyword(s):  
Grain Growth ◽  
Stress Gradient ◽  
Growth Stress ◽  
Low K

Analysis of Copper and Low-K Dielectric Interconnect System for 0.18-μm Technology

1998 ◽  
Vol 514 ◽  
Author(s):  
X. W. Lin ◽  
K. Hui ◽  
K. Ghanderhari ◽  
S. Bothra ◽  
D. Pramanik ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Cross Talk ◽  
High Performance ◽  
Dominant Role ◽  
Dielectric Materials ◽  
Process Window ◽  
Metal Line ◽  
Barrier Layer Thickness ◽  
The Impact ◽  
Low K

ABSTRACTAs the interconnect RC delay plays an increasingly dominant role in the performance of deep submicron ULSI devices, Cu and low-k dielectric materials are deemed necessary to replace the traditional Al and SiO2 system to lower both the resistance and capacitance of metallization. This paper presents a systematic simulation method to assess the impact of Cu and low-k dielectric to the system speed and cross-talk noise for 0.18-μm design rules (0.6 μm pitch), and determine the practical process windows for metal line aspect ratio and the structural configuration of dielectrics. It was found that the high performance requirements for 0.18-μm devices (600 MHz and cross-talk <0.3 on a 2×2 cm2 chip) cannot be met by simply replacing Al with Cu or SiO2 with low-k dielectric (k=3), without any change in the interconnect architecture. By reverse scaling the metal pitch to 2× at upper levels, on the other hand, one can easily find a manufacturable process window, even with the Al and SiO2 system. Case studies on R and C of various structural configurations and boundary conditions have been performed, including Cu barrier layer thickness, metal gap fill and capping layer thickness of low-k dielectrics, as well as the influence of the lower and upper metal plates. The significance of the results on the strategy of implementing Cu/low-k interconnects versus extending Al/SiO2 will be discussed.

Perceived Burden of Informal Caregivers of a Chronically Ill Older Family Member

GeroPsych ◽  
2011 ◽  
Vol 24 (3) ◽  
pp. 143-154 ◽  
Author(s):  
Elmar Gräßel ◽  
Raffaela Adabbo
Keyword(s):  
Family Member ◽  
Informal Caregiver ◽  
Chronically Ill ◽  
Stress Model ◽  
The Past ◽  
Perceived Burden ◽  
Hypothetical Construct ◽  
Care Situation ◽  
The Impact ◽  
Further Development

The burden of caregivers has been intensively researched for the past 30 years and has resulted in a multitude of individual findings. This review illustrates the significance of the hypothetical construct of perceived burden for the further development and design of the homecare situation. Following explanations regarding the term informal caregiver, we derive the construct burden from its conceptual association with the transactional stress model of Lazarus and Folkman. Once the extent and characteristics of burden have been set forth, we then present the impact of perceived burden as the care situation. The question of predictors of burden will lead into the last section from which implications can be derived for homecare and relief of caregivers.

Grain growth in perovskites: What is the impact of boundary transitions?

2016 ◽  
Vol 20 (5) ◽  
pp. 286-298 ◽  
Author(s):  
Wolfgang Rheinheimer ◽  
Michael J. Hoffmann
Keyword(s):  
Grain Growth ◽  
The Impact

Computational simulation of the relaxation of local stresses due to foreign object damage under cyclic loading

2010 ◽  
Vol 224 (2) ◽  
pp. 41-50 ◽  
Author(s):  
T Davis ◽  
J Ding ◽  
W Sun ◽  
S B Leen
Keyword(s):  
Stress Relaxation ◽  
Kinematic Hardening ◽  
Computational Simulation ◽  
Fatigue Loading ◽  
Cyclic Fatigue ◽  
Foreign Object ◽  
Stress Concentrations ◽  
Foreign Object Damage ◽  
Stress Ratios ◽  
The Impact

In this study, the phenomenon of residual stress relaxation from foreign object damage (FOD) is numerically simulated using a hybrid explicit—implicit finite-element method. The effects of cycle fatigue loadings on stress relaxation were studied. FOD is first simulated by firing a 3mm cube impacting onto a plate made of titanium alloy Ti-6Al-4V at 200m/s. The FOD impact produces two distinct stress concentrations: one is compressive directly beneath the impact site; the other is tensile around the outer edge of the impact. The plate was then assumed to be subjected to a cyclic fatigue loading. The stress relaxation was investigated under a range of stress ratios and maximum applied stresses. Two different material models were considered for the simulations, namely an elastic—perfectly plastic model and a non-linear kinematic hardening model.

A multiscale approach for modelling impact on woven composites under consideration of the fabric topology

2018 ◽  
Vol 52 (21) ◽  
pp. 2859-2874 ◽  
Author(s):  
Martin Schwab ◽  
Melanie Todt ◽  
Heinz E Pettermann
Keyword(s):  
Total Energy ◽  
Energy Absorption ◽  
Temporal Distribution ◽  
Woven Composites ◽  
Multiscale Approach ◽  
Stress Concentrations ◽  
Damage Mechanisms ◽  
Explicit Finite Element ◽  
Impact Behaviour ◽  
The Impact

A computationally efficient multiscale modelling approach for predicting impact damage within fabric reinforced laminated composites is presented. In contrast to common ply-level approaches, the topology of a multi-layered fabric reinforced laminate is resolved at tow-level for a sub-domain embedded in a shell layer with homogenised representation of the laminate. The detailed sub-domain is entirely modelled using shell elements, where material nonlinearities such as damage and plasticity-like behaviour of the tows, inelastic behaviour of unreinforced resin zones up to failure and delamination between plies are accounted for. To exemplify the capabilities of the approach, an explicit finite element simulation of a laminated plate consisting of eight carbon fabric reinforced epoxy plies with eight harness satin weaving style in a drop weight impact test setup is conducted. The spatial and temporal distribution of intra- and inter-ply damage is predicted and the total energy absorption by the plate, as well as the contributions of individual damage mechanisms are evaluated. The predictions show very good agreement with corresponding experimental data from the literature and give insight into the impact behaviour of the laminate beyond the capability of usual experiments. The new approach allows to resolve the stress concentrations due to fabric topology in detail. Compared to common ply-level approaches this is reflected in different predicted energy absorptions per mechanism although, the total energy absorption hardly differs. This is especially important when the post impact behaviour of laminates is predicted as it is strongly influenced by the extent of the individual damage mechanisms.

Intrinsic stress and alloying effect in Mo/Ni superlattices: a comparison between ion beam sputtering and thermal evaporation

2005 ◽  
Vol 875 ◽  
Author(s):  
A. Debelle ◽  
G. Abadias ◽  
A. Michel ◽  
C. Jaouen ◽  
Ph. Guérin ◽  
...  
Keyword(s):  
Thermal Evaporation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Lattice Parameter ◽  
Growth Stress ◽  
Intrinsic Stress ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Deposited Energy

AbstractEpitaxial Mo(110)/Ni(111) superlattices were grown on (1120) single-crystal sapphiresubstrates, by ion beam sputtering (IBS) and thermal evaporation (TE), in order to investigate the role of deposited energy on the interfacial mixing process observed in Mo sublayers. To separate intermixing and growth stress contributions, a careful and detailed characterization of the stress/strain state of both samples was performed by X-ray Diffraction (XRD). Non-equal biaxial coherency stresses are observed in both samples. For the IBS specimen, an additional source of stress, of hydrostatic type, due to growth-induced point defects, is present, resulting in a triaxial stress state. The use of ion irradiation to achieve a controlled stress relaxation can provide additional data and, as shown elsewhere, allows to obtain the stress-free lattice parameter a0 solely linked to chemical effects. For the TE sample, a standard biaxial analysis gives a0. In both samples, the a0 value is lower than the bulk lattice parameter, due to the presence of intermixed Mo(Ni) layers. However, the intermixing is larger in the sputtered Mo sublayers than in the thermal evaporated ones, putting forward the prime role of energy and/or momentum transfer occurring during energetic bombardment.

Enhancement and Modeling of Drain Current in Negative Capacitance Double Gate TFET

2021 ◽  
Author(s):  
SHIKHA U S ◽  
Rekha K James ◽  
Jobymol Jacob ◽  
Anju Pradeep
Keyword(s):  
Drain Current ◽  
Gate Oxide ◽  
Negative Capacitance ◽  
Double Gate ◽  
High K ◽  
Gate Control ◽  
Effect Transistor ◽  
Dimensional Simulation ◽  
The Impact ◽  
Low K

Abstract The drain current improvement in a Negative Capacitance Double Gate Tunnel Field Effect Transistor (NC-DG TFET) with the help of Heterojunction (HJ) at the source-channel region is proposed and modeled in this paper. The gate oxide of the proposed TFET is a stacked configuration of high-k over low-k to improve the gate control without any lattice mismatches. Tangent Line Approximation (TLA) method is used here to model the drain current accurately. The model is validated by incorporating two dimensional simulation of DG-HJ TFET with one dimensional Landau-Khalatnikov (LK) equation. The model matches excellently with the device simulation results. The impact of stacked gate oxide topology is also studied in this paper by comparing the characteristics with unstacked gate oxide. Voltage amplification factor (Av), which is an important parameter in NC devices is also analyzed.

scholarly journals The Impact of Probiotics and Egg Yolk IgY on Behavior and Blood Parameters in a Broiler Immune Stress Model

2020 ◽  
Vol 7 ◽  
Author(s):  
Ibrahim F. Rehan ◽  
Mohammed Youssef ◽  
Mootaz A. M. Abdel-Rahman ◽  
Sohaila G. Fahmy ◽  
Eslam Ahmed ◽  
...  
Keyword(s):  
Egg Yolk ◽  
Blood Parameters ◽  
Stress Model ◽  
Immune Stress ◽  
The Impact
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