Effect of grain growth stress and stress gradient on stress-induced voiding in damascene Cu/low-k interconnects for ULSI

2006 ◽  
Vol 504 (1-2) ◽  
pp. 284-287 ◽  
Author(s):  
Jong-Min Paik ◽  
Il-Mok Park ◽  
Young-Chang Joo
Keyword(s):  
Grain Growth ◽  
Stress Gradient ◽  
Growth Stress ◽  
Low K

Modeling the Impact of Layout Variation on Process Stress in Cu/Low k Interconnects

2006 ◽  
Vol 914 ◽  
Author(s):  
Xiaopeng Xu ◽  
Dipu Pramanik ◽  
Greg Rollins
Keyword(s):  
Grain Growth ◽  
Growth Stress ◽  
Intrinsic Stress ◽  
Stress Model ◽  
Stress Concentrations ◽  
Metal Line ◽  
Mismatch Stress ◽  
The Impact ◽  
Low K ◽  
Process Stress

AbstractThe layout dependence of process stress in Cu/low k interconnects are examined using various stress sources and layout patterns. The anisotropic grain growth stress model is compared with the conventional isotropic intrinsic stress model and the latter is found to underestimate stress concentrations in the dielectric regions near metal line ends. Both the grain growth stress in copper and the thermal mismatch stress in copper and low k dielectrics are considered in the layout dependence study. The results demonstrate that accurate stress evaluation in interconnect structures has to employ geometrical models that include layout variations. Capabilities are developed to extract these geometrical models directly from layout analysis.

Effect of Microstructure and Dielectric Materials on Stress-Induced Damages in Damascene Cu/Low-k Interconnects

2005 ◽  
Vol 863 ◽  
Author(s):  
Young-Chang Joo ◽  
Jong-Min Paik ◽  
Jung-Kyu Jung
Keyword(s):  
Thermal Stress ◽  
Line Width ◽  
Driving Force ◽  
Hydrostatic Stress ◽  
Stress Gradient ◽  
Dielectric Materials ◽  
Growth Stress ◽  
Element Analysis ◽  
Thermomechanical Stress ◽  
Low K

AbstractThe line width dependence of stress in damascene Cu was examined experimentally as well as with a numerical simulation. The measured hydrostatic stress was found to increase with increasing line width. The larger stress in an interconnect with large dimension is attributed to the larger grain size, which induce higher growth stress in addition to thermomechanical stress. A stress model based on microstructure was constructed and the contribution of the growth and thermal stress of the damascene lines were quantified using finite element analysis. It was found that the stress of the via is lower than that of wide lines when both the growth stress and thermal stress were considered. This stress gradient between via and line, which is the driving force of vacancy diffusion, is larger when the low-k with lower stiffness and higher thermal expansion is used for dielectric layer. For this reason, the Cu/low-k can be more vulnerable to stress-induced voiding.

scholarly journals Scanning 3DXRD Measurement of Grain Growth, Stress, and Formation of Cu6Sn5 around a Tin Whisker during Heat Treatment

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 446 ◽  
Author(s):  
Johan Hektor ◽  
Stephen Hall ◽  
N. Henningsson ◽  
Jonas Engqvist ◽  
Matti Ristinmaa ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Grain Boundaries ◽  
Grain Growth ◽  
Hydrostatic Stress ◽  
Coincidence Site Lattice ◽  
Sample Surface ◽  
Growth Stress ◽  
Projection Algorithm ◽  
Tin Whisker ◽  
Tin Coating

The 3D microstructure around a tin whisker, and its evolution during heat treatment were studied using scanning 3DXRD. The shape of each grain in the sample was reconstructed using a filtered-back-projection algorithm. The local lattice parameters and grain orientations could then be refined, using forward modelling of the diffraction data, with a spatial resolution of 250 n m . It was found that the tin coating had a texture where grains were oriented such that their c-axes were predominantly parallel to the sample surface. Grains with other orientations were consumed by grain growth during the heat treatment. Most of the grain boundaries were found to have misorientations larger than 15 ∘ , and many coincidence site lattice (CSL) or other types of low-energy grain boundaries were identified. None of the grains with CSL grain boundaries were consumed by grain growth. During the heat treatment, growth of preexisting Cu6Sn5 occurred; these grains were indexed as a hexagonal η phase, which is usually documented to be stable only at temperatures exceeding 186 ∘ C . This indicates that the η phase can exist in a metastable state for long periods. The tin coating was found to be under compressive hydrostatic stress, with a negative gradient in hydrostatic stress extending outwards from the root of the whisker. Negative stress gradients are generally believed to play an essential role in providing the driving force for diffusion of material to the whisker root.

Relation Between Macro- and Microstress in Thin Metallic Layers

1999 ◽  
Vol 594 ◽  
Author(s):  
Léon J. Seijbel ◽  
Rob Delhez
Keyword(s):  
Dislocation Density ◽  
Grain Growth ◽  
Elastic Constants ◽  
Elastic Interaction ◽  
Growth Stress ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nickel Films ◽  
Thin Nickel ◽  
Annealing Experiments

AbstractX-ray diffraction has been used to measure the stress in thin nickel films. In addition to the stress value, information is obtained about the elastic interaction between grains. Various models exist to calculate the stress from the strain. A model that uses the mechanical elastic constants has been used. From this model it can be concluded that the model by Hill is applicable for the layers analyzed. Annealing experiments between 300 and 500 K show that the initially present growth stress reduces to zero at 500 K. The microstrain inside the grains is obtained from the broadening of the diffraction lines measured. During annealing the diffraction lines narrow. This is caused by two effects: grain growth and reduction of the dislocation density.

Grain Growth, Stress, and Impurities in Electroplated Copper

2002 ◽  
Vol 17 (3) ◽  
pp. 582-589 ◽  
Author(s):  
S. H. Brongersma ◽  
E. Kerr ◽  
I. Vervoort ◽  
A. Saerens ◽  
K. Maex
Keyword(s):  
Grain Size ◽  
Size Distribution ◽  
Grain Growth ◽  
Sheet Resistance ◽  
Grain Size Distribution ◽  
High Temperatures ◽  
Intermediate State ◽  
Growth Stress ◽  
Grain Structure ◽  
Electroplated Copper

The widely observed secondary grain growth in electroplated Copper layers is shown to be incomplete after the sheet resistance and stress of the layer appear to have stabilized. Instead the layer is in an intermediate state with a grain size distribution that depends on the plating conditions. Further extensive annealing at high temperatures results in an additional considerable enlargement of the grain structure, accompanied by an additional decrease of the sheet resistance and desorption of impurities that were incorporated during plating.

Effects of Silicon Doping and Threading Dislocation Density on Stress Evolution in AlGaN Films

2012 ◽  
Vol 1396 ◽  
Author(s):  
Joan M. Redwing ◽  
Ian C. Manning ◽  
Xiaojun Weng ◽  
Sarah M. Eichfeld ◽  
Jeremy D. Acord ◽  
...  
Keyword(s):  
Compressive Stress ◽  
Stress Gradient ◽  
Chemical Vapor ◽  
Growth Stress ◽  
Film Stress ◽  
Threading Dislocation ◽  
Silicon Doping ◽  
Dislocation Interaction ◽  
Si Doping ◽  
Si Doped

ABSTRACTIn-situ wafer curvature measurements were used to study the effect of Si doping on intrinsic growth stress during the metalorganic chemical vapor deposition (MOCVD) growth of AlxGa1-xN (x=0-0.62) layers on SiC substrates. Post-growth transmission electron microscopy (TEM) characterization was used to correlate measured changes in stress with changes in film microstructure. Si doping was found to result in the inclination of edge-type threading dislocations (TDs) in AlxGa1-xN which resulted in a relaxation of compressive stress and generation of tensile stress. The experimentally measured stress gradient was similar to that predicted by an effective climb model. Dislocation inclination resulted in a reduction in the TD density for Si-doped layers compared to undoped AlxGa1-xN likely due to increased opportunities for dislocation interaction and annihilation. The TD density, which increased with increasing Al-fraction, was found to significantly alter the stress gradients in the films. Film stress was also observed to play a role in TD inclination. In undoped AlxGa1-xN, TD inclination was observed only when the film grew under a compressive stress while in Si-doped AlxGa1-xN, TD inclination was observed independent of the sign or magnitude of the film stress. Si dopants are believed to alter the concentration of surface vacancies which gives rise to dislocation jog via a surface-mediated climb mechanism.

Grain Refinement in Titanium-Erbium Alloys

1974 ◽  
Vol 32 ◽  
pp. 522-523
Author(s):  
B. B. Rath ◽  
J. E. O'Neal ◽  
R. J. Lederich
Keyword(s):  
Electron Microscopy ◽  
Size Distribution ◽  
Grain Refinement ◽  
Grain Growth ◽  
Volume Fraction ◽  
Pure Titanium ◽  
Systematic Investigation ◽  
Second Phase ◽  
Titanium Matrix ◽  
Average Size

Addition of small amounts of erbium has a profound effect on recrystallization and grain growth in titanium. Erbium, because of its negligible solubility in titanium, precipitates in the titanium matrix as a finely dispersed second phase. The presence of this phase, depending on its average size, distribution, and volume fraction in titanium, strongly inhibits the migration of grain boundaries during recrystallization and grain growth, and thus produces ultimate grains of sub-micrometer dimensions. A systematic investigation has been conducted to study the isothermal grain growth in electrolytically pure titanium and titanium-erbium alloys (Er concentration ranging from 0-0.3 at.%) over the temperature range of 450 to 850°C by electron microscopy.

Microstructural characterization of a rapidly solidified Al-Fe-V-Si alloy for elevated temperature applications

1988 ◽  
Vol 46 ◽  
pp. 550-551
Author(s):  
R. E. Franck ◽  
J. A. Hawk ◽  
G. J. Shiflet
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Grain Growth ◽  
Volume Fraction ◽  
Microstructural Characterization ◽  
Second Phase ◽  
Microstructural Stability ◽  
Elevated Temperature Strength ◽  
Temperature Applications

Rapid solidification processing (RSP) is one method of producing high strength aluminum alloys for elevated temperature applications. Allied-Signal, Inc. has produced an Al-12.4 Fe-1.2 V-2.3 Si (composition in wt pct) alloy which possesses good microstructural stability up to 425°C. This alloy contains a high volume fraction (37 v/o) of fine nearly spherical, α-Al12(Fe, V)3Si dispersoids. The improved elevated temperature strength and stability of this alloy is due to the slower dispersoid coarsening rate of the silicide particles. Additionally, the high v/o of second phase particles should inhibit recrystallization and grain growth, and thus reduce any loss in strength due to long term, high temperature annealing.The focus of this research is to investigate microstructural changes induced by long term, high temperature static annealing heat-treatments. Annealing treatments for up to 1000 hours were carried out on this alloy at 500°C, 550°C and 600°C. Particle coarsening and/or recrystallization and grain growth would be accelerated in these temperature regimes.

Electron Probe Analysis of Vertebrate Smooth Muscle: Distribution of Ca and Ci

1976 ◽  
Vol 34 ◽  
pp. 334-335 ◽  
Author(s):  
Avril V. Somlyo ◽  
H. Shuman ◽  
A.P. Somlyo
Keyword(s):  
Smooth Muscle ◽  
Electron Probe ◽  
Preliminary Report ◽  
Cell Damage ◽  
Electron Probe Analysis ◽  
Perinuclear Space ◽  
Probe Analysis ◽  
High K ◽  
Low K ◽  
Initial Results

This is a preliminary report of electron probe analysis of rabbit portal-anterior mesenteric vein (PAMV) smooth muscle cryosectioned without fixation or cryoprotection. The instrumentation and method of electron probe quantitation used (1) and our initial results with cardiac (2) and skeletal (3) muscle have been presented elsewhere.In preparations depolarized with high K (K2SO4) solution, significant calcium peaks were detected over the sarcoplasmic reticulum (Fig 1 and 2) and the continuous perinuclear space. In some of the fibers there were also significant (up to 200 mM/kg dry wt) calcium peaks over the mitochondria. However, in smooth muscle that was not depolarized, high mitochondrial Ca was found in fibers that also contained elevated Na and low K (Fig 3). Therefore, the possibility that these Ca-loaded mitochondria are indicative of cell damage remains to be ruled out.

Sign in / Sign up

Export Citation Format

Share Document