scholarly journals Dissolution Kinetics of Nickel in Lead-free Sn-Bi-In-Zn-Sb Soldering Alloys

2007 ◽  
Vol 993 ◽  
Author(s):  
Katayun Barmak ◽  
David C. Berry ◽  
Vira G. Khoruzha ◽  
Kostyantyn A. Meleshevich ◽  
Vasyl I. Dybkov
Keyword(s):  
Growth Rate ◽  
Dissolution Kinetics ◽  
Lead Free ◽  
Rotating Disc ◽  
Solid Nickel ◽  
Soldering Alloys ◽  
Kinetics Of ◽  
Dissolution Rate Constants ◽  
Solder Interface ◽  
Intermetallic Layers

AbstractThe dissolution process of nickel in liquid Pb-free 87.5% Sn-7.5% Bi-3% In-1% Zn-1% Sb and 80% Sn-15% Bi-3% In-1% Zn-1% Sb soldering alloys has been investigated by the rotating disc technique at 250-450°C. The temperature dependence of the nickel solubility in the solders obeys a relation of the Arrhenius type cs = 4.94 × 102 exp (-39500/RT) % for the former alloy and cs = 4.19 × 102 exp (-40200/RT)% for the latter, where R is in J mol-1 K-1 (8.314 J mol-1 K-1) and T in K. The solubility values of nickel in the alloys differ considerably, while the dissolution rate constants are rather close. The data presented can be used to evaluate (i) the thickness of the dissolved portion of the solid nickel material during soldering, (ii) the extent of saturation of a solder with nickel and (iii) the effect of dissolution on the growth rate of intermetallic layers at the Ni-solder interface.

Non-Equilibrium Dissolution Kinetics of Micro-Size Metal Particles in Lead-Free Solders

2005 ◽  
Author(s):  
M. Faizan ◽  
G.-X. Wang
Keyword(s):  
Solder Joints ◽  
Early Stage ◽  
Dissolution Kinetics ◽  
Lead Free ◽  
Spherical Particles ◽  
Metal Particles ◽  
Interface Kinetics ◽  
Packaging Industry ◽  
Lead Free Solders ◽  
Kinetics Of

Soldering is the default joining process in the electronic packaging industry. Solder joints are obtained by interaction of the substrate with the molten solder. Soldering reaction and the resulting dissolution of substrate material is a complicated process. Reliability and strength of solder joints during service have always been the critical issues in electronic packaging industry. Mechanical strength of solder joints can significantly be increased by employing composite solders. These composite solders are sometimes obtained by incorporation of micro- and nano-size metal particles in the solder paste before the soldering process. Better understanding of substrate-solder interaction is important for the proper selection of the reinforcing particle size and composition. In the present research the relative importance of interface reaction and diffusion has been studied. Dissolution kinetics of a planar substrate and spherical particles has been investigated. Our results show that the dissolution is governed both by interface kinetics and long-range diffusion. Non-equilibrium behavior has been observed in the early stage of the process. It has been observed that at the early stage the dissolution process is governed by interface kinetics, while diffusion became the rate controlling mechanism at the later phase. A mathematically rigorous model has been proposed for simulating the dissolution of the substrate in the liquid lead-free solders. The study is extended to investigate the dissolution of spherical particles in molten solders. The results show that the initial particle dimension plays a critical role in the end particle size after the reflow process.

Comparison of copper sulphate pentahydrate growth rates determined by different methods

1990 ◽  
Vol 55 (7) ◽  
pp. 1691-1707 ◽  
Author(s):  
Miloslav Karel ◽  
Jiří Hostomský ◽  
Jaroslav Nývlt ◽  
Axel König
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Fluidized Bed ◽  
Growth Rates ◽  
Copper Sulphate ◽  
Crystal Growth Rate ◽  
Effect Of Temperature ◽  
Rotating Disc ◽  
Shape Factors ◽  
Data Treatment

Crystal growth rates of copper sulphate pentahydrate (CuSO4.5 H2O) determined by different authors and methods are compared. The methods included in this comparison are: (i) Measurement on a fixed crystal suspended in a streaming solution, (ii) measurement on a rotating disc, (iii) measurement in a fluidized bed, (iv) measurement in an agitated suspension. The comparison involves critical estimation of the supersaturation used in measurements, of shape factors used for data treatment and a correction for the effect of temperature. Conclusions are drawn for the choice of values to be specified when data of crystal growth rate measurements are published.

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

Measurement of growth rates for single crystals and pressed tablets of CuSO4.5 H2O on a rotating disc

1989 ◽  
Vol 54 (11) ◽  
pp. 2951-2961 ◽  
Author(s):  
Miloslav Karel ◽  
Jaroslav Nývlt
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
Single Crystals ◽  
Growth Rates ◽  
Diffusion Coefficients ◽  
Preferred Orientation ◽  
Rotating Disc ◽  
Dissolution Rates ◽  
Rates Of Growth ◽  
Good Agreement

Measured growth and dissolution rates of single crystals and tablets were used to calculate the overall linear rates of growth and dissolution of CuSO4.5 H2O crystals. The growth rate for the tablet is by 20% higher than that calculated for the single crystal. It has been concluded that this difference is due to a preferred orientation of crystal faces on the tablet surface. Calculated diffusion coefficients and thicknesses of the diffusion and hydrodynamic layers in the vicinity of the growing or dissolving crystal are in good agreement with published values.

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