The Effects of Nucleation and Growth on Epitaxy in the CoSi2/Si System

1981 ◽  
Vol 10 ◽  
Author(s):  
J. M. Gibson ◽  
J. C. Bean ◽  
J. M. Poate ◽  
R. T. Tung
Keyword(s):  
Cross Section ◽  
Defect Structure ◽  
Ultrahigh Vacuum ◽  
Nucleation And Growth ◽  
Silicon Substrates ◽  
Pinning Mechanism ◽  
Preparation Conditions ◽  
Transmission Electron ◽  
Silicide Growth

The epitaxial perfection and microstructure in thin CoSi2 (111) (and NiSi2) films on silicon has been examined using transmission electron microscopy, including high resolution cross section techniques. We find that, under ultrahigh vacuum preparation conditions only, genuine single-crystal epitaxy can occur for bothreacted and codeposited CoSi2 films. A unique interfacial defect structure is associated with this epitaxy, in which the silicide films are rotated through 180° about (111) with respect to the silicon substrates. Under less than perfectly clean conditions epitaxial perfection is never obtained for CoSi2. Moreover such perfection has never been attained under any conditions for NiSi2 on Si(111). By studying the evolution of epitaxy and defect structure in thin and thick films we have proposed a model to explain the unique quality of ultrahigh vacuum CoSi2 films. The model invokes a defect pinning mechanism to explain the dominance of the 180°-rotated epitaxy during silicide growth.

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 367-370 ◽  
Author(s):  
Maya Marinova ◽  
Alkyoni Mantzari ◽  
Milena Beshkova ◽  
Mikael Syväjärvi ◽  
Rositza Yakimova ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Temperature Gradient ◽  
Defect Structure ◽  
Temperature Gradients ◽  
Structural Quality ◽  
Fault Density ◽  
Transmission Electron

In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC nominally on-axis substrates at a temperature of 2000°C and different temperature gradients, ranging from 5 to 8 °C /mm. The influence of the temperature gradient on the structural quality of the layers is discussed. The formation of specific twin complexes and conditions for lower stacking fault density are investigated.

Growth and Characterization of (012)- and (001)-Oriented Epitaxial Anatase Thin Films

2006 ◽  
Vol 46 ◽  
pp. 146-151
Author(s):  
Andriy Lotnyk ◽  
Stephan Senz ◽  
Dietrich Hesse
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Single Phase ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Transmission Electron

Single phase TiO2 thin films of anatase structure have been prepared by reactive electron beam evaporation. Epitaxial (012)- and (001)-oriented anatase films were successfully obtained on (110)- and (100)-oriented SrTiO3 substrates, respectively. X-ray diffraction and cross section transmission electron microscopy investigations revealed a good epitaxial quality of the anatase films grown on the SrTiO3 substrates.

Nucleation Phenomena during Titanium Silicon Reaction

1989 ◽  
Vol 146 ◽  
Author(s):  
Ivo J.M.M. Raaijmakers ◽  
Leo J. van Ijzendoorn ◽  
Anton M.L. Theunissen ◽  
Ki-Bum Kim
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Cross Section ◽  
Nucleation And Growth ◽  
Diffusion Control ◽  
Transmission Electron ◽  
First Results ◽  
Titanium Silicon

ABSTRACTIt is known that thermal annealing of Ti and amorphous (α) Si first results in an amorphous silicide, after which the crystalline disilicide grows under diffusion control. The situation with respect to the reaction of Ti with crystalline (x) Si is much less clear. We have investigated the reaction of Ti with xSi with (high resolution) cross-section transmission electron microscopy and in-situ Rutherford backscattering spectroscopy. It is shown that an amorphous silicide can also be formed on crystalline Si. The presence of this amorphous silicide as a precursor to the C49TiSi2 phase is suggested to be an important issue in the nucleation and growth of the disilicide.

Planar Defects, Voids and their Relationship in 3C-SiC Layers

2005 ◽  
Vol 483-485 ◽  
pp. 189-192
Author(s):  
David Méndez ◽  
A. Aouni ◽  
Daniel Araújo ◽  
Gabriel Ferro ◽  
Yves Monteil ◽  
...  
Keyword(s):  
Cross Section ◽  
Lattice Mismatch ◽  
Misfit Dislocations ◽  
Lateral Growth ◽  
Si Substrate ◽  
Transmission Electron Microscopy Micrographs ◽  
Planar Defects ◽  
Transmission Electron ◽  
The Relationship

One of the problems with Si(001)/3C-SiC templates is that they involve highly defective interfaces due to the presence of misfit dislocations, voids and planar defects that degrade the SiC layer quality. A way to accommodate the high lattice mismatch between these materials and reduce the voids density is to carbonize the Si substrate before the epitaxial growth. In this contribution an alternative way to reduce planar defects density is presented by analyzing the relationship between planar defects and voids. Planar view and cross section transmission electron microscopy micrographs show a diminution of planar defects in the regions surrounding the voids. Due to the lower elastic energy over the voids and/or to a lateral growth in these regions, the generation of planar defects is partially deactivated, improving locally the crystalline quality of the SiC layer. The introduction of such cavities can be thus seen as a new parameter of Si/SiC templates design.

Grain Growth in Titanium Silicide Films During the Formation Reaction

1990 ◽  
Vol 202 ◽  
Author(s):  
Yunji L. Corcoran ◽  
Alexander H. King ◽  
Nimal deLanerolle ◽  
Bonggi Kim ◽  
John Berg
Keyword(s):  
Growth Rate ◽  
Grain Growth ◽  
Cross Section ◽  
Titanium Silicide ◽  
Silicon Substrates ◽  
Experimental Conditions ◽  
Silicide Layer ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Relationship Of

ABSTRACTTitanium films of 0.5 µm thickness were sputter deposited on silicon substrates. After rapid thermal annealing at temperatures ranging from 600°C to 850°C for times up to 45 seconds in nitrogen, transmission electron microscope (TEM) cross section specimens were made from the wafers. Grain sizes of the resulting titanium disilicide were measured from TEM cross section micrographs. The results show that C49-TiSi2 has a different grain growth rate than C54-TiSi2- Under our experimental conditions, C54-TiSi2 has a much higher growth rate. Titanium silicide on arsenic implanted silicon substrates shows a lower grain growth rate than that on unimplanted substrates under the same conditions. The thickness of the silicide layer was also measured for each specimen. The relationship of thickness and grain size will be discussed.

scholarly journals Superior Structural Quality of Newly Developed GaN Pendeo-Epitaxial Layers.

2001 ◽  
Vol 693 ◽  
Author(s):  
Z. Liliental-Weber ◽  
J. Jasinski ◽  
D. Cherns ◽  
M. Baines ◽  
R. Davis
Keyword(s):  
Electron Microscopy ◽  
Silicon Nitride ◽  
Cross Section ◽  
Structural Quality ◽  
Epitaxial Layers ◽  
Plan View ◽  
Mask Layer ◽  
Transmission Electron ◽  
Different Types

AbstractTransmission electron microscopy of plan-view and cross-section samples of pendeo-epitaxial layers is described. Samples grown with and without silicon nitride masks are compared. A large misorientation of the GaN grown above the mask was observed, with 2-3° tilt between wing and seed areas, caused by additional nucleation on the mask layer. Some misorientation was also observed between wing/wing areas of the sample. Samples grown without silicon nitride masks show much smaller misorientations and contain different types of defects.

scholarly journals Thermal Cycling of (RE)BCO-Based Superconducting Tapes Joined by Lead-Free Solders

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1052
Author(s):  
Michal Skarba ◽  
Marcela Pekarčíková ◽  
Lubomír Frolek ◽  
Eva Cuninková ◽  
Martin Necpal
Keyword(s):  
Critical Current ◽  
Cross Section ◽  
Dominant Role ◽  
Superconducting Tapes ◽  
Thermal Cycles ◽  
Superconducting Tape ◽  
Preparation Conditions ◽  
Current Voltage ◽  
Lead Free Solders

We prepared overlap soldered joints of high-temperature superconducting tapes, using various materials and preparation conditions. In order to select the joints with optimal performance, we correlated their electrical properties (derived from current–voltage curves) with the microstructure of the respective joint cross-section by scanning electron microscopy. With the first group of joints, we focused on the effect of used materials on joint resistivity and critical current, and we found that the dominant role was played by the quality of the internal interfaces of the superconducting tape. Initial joint resistivities ranged in the first group from 41 to 341 nΩ·cm2. The second group of joints underwent a series of thermal cyclings, upon which the initial resistivity range of 35–49 nΩ·cm2 broadened to 25–128 nΩ·cm2. After the total of 135 thermal cycles, three out of four joints showed no signs of significant degradation. Within the limit of 100 thermal cycles, reliable soldered joints can be thus prepared, with normalized resistivity not exceeding 1.4 and with normalized critical current above the value of 0.85.

Nucleation and Growth of Cosi2 on (001) and (111) Si

1987 ◽  
Vol 102 ◽  
Author(s):  
C.W.T. Bulle-Lieuwma ◽  
A.H. Van Ommen ◽  
J. Hornstra
Keyword(s):  
Electron Microscopy ◽  
Defect Structure ◽  
Nucleation And Growth ◽  
Thermal Reaction ◽  
Nucleation Mechanism ◽  
Misfit Dislocations ◽  
Lattice Match ◽  
Edge Type ◽  
Burgers Vector ◽  
Transmission Electron

ABSTRACTNucleation and growth of epitaxial CoSi2 on Si by the thermal reaction of vapour deposited Co on (001) and (111) Si have been studied by transmission electron microscopy (TEM). On (001)-Si the layer consists of CoSi2 grains. Apart from an aligned (a)-orientation, CoSi2 occurs in a number of orientations, including a (110) preferential (b)-orientation. On (111) Si, single-crystalline layers are obtained, predominantly in the B-type orientation, which is rotated through 180° relative to the aligned (111)-orientation (A-type). The interfacial defect structure consists of misfit dislocations of edge-type with Burgers vector b=a/6<112>, running in <110> directions. The observations for both (001) and (111) Si are related to geometrical lattice match between CoSi2 and Si. In addition to the experimental results, a computer program has been made which calculates the matching between various orientations of CoSi2 and Si. The nucleation of B-type CoSi2 for (111) Si and the different oriented grains for (001) Si are discussed in terms of a nucleation mechanism at steps at the interface in combination with a relatively large mismatch.

Experimental Study of Precipitation Processes in Oxygen Implanted Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
R. Weber ◽  
R. Yankov ◽  
R. Müller ◽  
W. Skorupa ◽  
S. Reiss ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ostwald Ripening ◽  
Nucleation And Growth ◽  
Silicon Substrates ◽  
Clear Trend ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Buried Layer ◽  
Scanning Electron

ABSTRACTSingle crystal (100) silicon substrates were implanted at 300 keV with substoichiometric oxygen doses ranging from 1 × 1016 to 1 × 1017 cm-2. Samples were annealed for 2 hours over the temperature range from 1100°C to 1250°C and were subsequently analysed by both cross sectional transmission electron microscopy (XTEM) and scanning electron microscopy (SEM). The nucleation and growth of oxide precipitates within the implanted layer was followed during annealing. The emphasis was placed upon studying the process of Ostwald ripening which is known to play an important role in the formation of the incipient buried layer. Besides, a clear trend of the SiO2 precipitates to arrange in well defined regions was revealed and this was attributed, as distinct from the earlier claims, to an inherent process of self organisation.

Heteroepitaxy of CoSi2 on Patterned Si(100) Substrates

1995 ◽  
Vol 402 ◽  
Author(s):  
O. P. Karpenko ◽  
D. J. Eaglesham ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Cross Section ◽  
Nucleation And Growth ◽  
High Quality ◽  
Plan View ◽  
Transmission Electron ◽  
Triple Points ◽  
Sharp Interfaces

AbstractThis study has addressed the effect of starting surface topography on the nucleation and growth of epitaxial siicide layers. CoSi2 layers were grown via the template technique on one-dimensionally patterned Si (100) substrates. These substrates contained mesa stripes, running parallel to Si[011], and exhibited either smoothly varying sinusoidal profiles, or a number of well defined Si Ihkl) facets. Conventional plan view and high resolution cross section transmission electron microscopy were used to analyze the films grown on these substrates. The orientation and morphology of the CoSi2 grains depend on the angle (θ), between the CoSi2 / Si interface normal and Si (100). High quality (100) oriented CoSi2 grew on the tops and bottoms of mesa structures, where θ < 5°, and formed atomically sharp interfaces with the substrate. In contrast, CoSi2 (110) and CoSi2 (221 ) grains nucleated along the sidewalls of the mesa structures. The CoSi2 (110) grains formed rough interfaces with the substrate and were terminated by regions of step bunching at the grain boundary / substrate triple points. CoSi2 (110) grains were most highly concentrated in regions where θ varied from 5° to 12°. Similarly, the CoSi2 (221 ) grains formed faceted (111) b-type silicide / substrate interfaces, and were most highly concentrated in regions where θ > 10°. These data suggest that double height steps, step bunches and facets on the substrate are related to the nucleation of misoriented silicide grains.

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