Characteristics of BST Capacitors with Aluminum Electrode and Iridium Oxide Barrier Layers

2007 ◽  
Vol 1034 ◽  
Author(s):  
Thottam Kalkur ◽  
Troung Troung
Keyword(s):  
High Frequency ◽  
Annealing Temperature ◽  
Series Resistance ◽  
Iridium Oxide ◽  
Aluminum Electrode ◽  
Barrier Layers ◽  
Post Annealing ◽  
Capacitance Voltage ◽  
Oxide Barrier ◽  
Al Metallization

AbstractThe high frequency operation of BST capacitors necessitates the development of low series resistance electrodes. As an alternative to platinum, DC magnetron sputtered IrO2/Aluminum top electrode metallization for BST capacitors has been proposed. The capacitance voltage characteristics of BST capacitors did not change significantly due to the deposition of aluminum on iridium oxide. Post annealing in nitrogen environment shows that IrO2/Al metallization does not degrade annealing temperature up to 450 oC.

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Effects of post-annealing temperature and micropillar shape on physical properties of micropillar-type multiferroic composite thin films

2021 ◽  
Vol 60 (SF) ◽  
pp. SFFB06
Author(s):  
Tsubasa Migita ◽  
Masafumi Kobune ◽  
Kengo Matsumoto ◽  
Yuuri Takeuchi ◽  
Hironori Fujisawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Annealing Temperature ◽  
Composite Thin Films ◽  
Post Annealing ◽  
Multiferroic Composite ◽  
Post Annealing Temperature

scholarly journals Structural Studies of Zno Nanostructures on Porous Silicon: Effect of Post-Annealing Temperature

2018 ◽  
Vol 7 (3.11) ◽  
pp. 48
Author(s):  
Kevin Alvin Eswar ◽  
Mohd Husairi Fadzillah Suhaimi ◽  
Muliyadi Guliling ◽  
Zuraida Khusaimi ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Annealing Temperature ◽  
Electrochemical Etching ◽  
Texture Coefficient ◽  
Zno Nanostructures ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Post Annealing Temperature

ZnO Nanostructures have been successfully deposited on of Porous silicon (PSi) via wet colloid chemical approach. PSi was prepared by electrochemical etching method. ZnO/PSi thin films were annealed in different temperature in the range of 300 °C to 700 °C. Surface morphology studies were conducted using field emission scanning microscopy (FESEM). Flower-like structures of ZnO were clearly seen at annealing temperature of 500 °C. The X-ray diffraction spectra (XRD) have been used to investigate the structural properties. There are three dominant peaks referred to plane (100), (002) and (101) indicates that ZnO has a polycrystalline hexagonal wurtzite structures. Plane (002) shows the highest intensities at annealing temperature of 500 °C. Based on plane (002) analysis, the sizes were in range of 30.78 nm to 55.18. In addition, it was found that the texture coefficient of plane (002) is stable compared to plane (100) and (101). 

Influence of Post-Annealing Temperature on the Material Properties of Zinc Oxide Nanorods

2010 ◽  
Vol 10 (10) ◽  
pp. 6419-6423 ◽  
Author(s):  
Sharul Ashikin Kamaruddin ◽  
Mohd Zainizan Sahdan ◽  
Kah-Yoong Chan ◽  
Mohamad Rusop ◽  
Hashim Saim
Keyword(s):  
Zinc Oxide ◽  
Material Properties ◽  
Annealing Temperature ◽  
Zinc Oxide Nanorods ◽  
Post Annealing ◽  
Oxide Nanorods ◽  
Post Annealing Temperature

scholarly journals Novel Negative Capacitance and Conductance in All Temperatures and Voltages of Au/CNTs/n-Si/Al at Low and High Frequencies

2021 ◽  
Author(s):  
A. Ashery ◽  
Samia Gad ◽  
A. E.H. Gaballah ◽  
G. M. Turky
Keyword(s):  
Carbon Nanotube ◽  
High Frequency ◽  
Series Resistance ◽  
Negative Capacitance ◽  
Donor Concentration ◽  
Low Frequencies ◽  
High Frequencies ◽  
Depletion Width ◽  
Density Surface ◽  
P Type

Abstract The structure of carbon nanotube CNTs functioning as p-type material deposited over n-type silicon to produce heterojunction of Au/CNTs/n-Si/Al is presented in this study.This work explored the capacitance and conductance at various frequencies, temperatures, and voltages, the novelty here is that negative capacitance and conductance were observed at high frequencies in all temperatures and voltages, whereas capacitance appeared at both high and low frequencies, such as (2x107,1x107,1x102,10) Hz. At high-frequency f = 2x107 Hz, the capacitance raises while the conductance decreases; at all temperatures and voltages, the capacitance and conductance exhibit the same behavior at particular frequencies such as 1x106,1x105,1x104,1x103Hz, however their behavior differs at 2x107,1x107, 1x102 and 10Hz. Investigating the reverse square capacitance with voltage yielded the energy fermi (Ef), density surface of states (Nss), depletion width (Wd), barrier height, series resistance, and donor concentration (Nd)

Effect of Annealing on Structural and Optical Properties of Pulsed Laser Deposited Titanium Dioxide Thin Films

2009 ◽  
Vol 67 ◽  
pp. 65-70 ◽  
Author(s):  
Gaurav Shukla ◽  
Alika K. Khare
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Annealing Temperature ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tio2 Thin Films ◽  
Post Annealing ◽  
Post Annealing Temperature

TiO2 is a widely studied material for many important applications in areas such as environmental purification, photocatalyst, gas sensors, cancer therapy and high effect solar cell. However, investigations demonstrated that the properties and applications of titanium oxide films depend upon the nature of the crystalline phases present in the films, i.e. anatase and rutile phases. We report on the pulsed laser deposition of high quality TiO2 thin films. Pulsed Laser deposition of TiO2 thin films were performed in different ambient viz. oxygen, argon and vacuum, using a second harmonic of Nd:YAG laser of 6 ns pulse width. These deposited films of TiO2 were further annealed for 5hrs in air at different temperatures. TiO2 thin films were characterized using x-ray diffraction, SEM, photoluminescence, transmittance and reflectance. We observed effect of annealing over structural, morphological and optical properties of TiO2 thin films. The anatase phase of as-deposited TiO2 thin films is found to change into rutile phase with increased annealing temperature. Increase in crystalline behaviour of thin films with post-annealing temperature is also observed. Surface morphology of TiO2 thin films is dependent upon ambient pressure and post- annealing temperature. TiO2 thin films are found to be optically transparent with very low reflectivity hence will be suitable for antireflection coating applications.

Post-annealing-temperature-dependent Magnetic Anisotropy of CoFe$_2$O$_4$ Thin Films

2013 ◽  
Vol 63 (12) ◽  
pp. 1328-1332
Author(s):  
D. Y. Lee ◽  
C. -W. Cho ◽  
S. H. Lee ◽  
J. W. Kim ◽  
H. K. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Annealing Temperature ◽  
Temperature Dependent ◽  
Post Annealing ◽  
Post Annealing Temperature

High flux ethanol dehydration using nanofibrous membranes containing graphene oxide barrier layers

2013 ◽  
Vol 1 (41) ◽  
pp. 12998 ◽  
Author(s):  
Tsung-Ming Yeh ◽  
Zhe Wang ◽  
Devinder Mahajan ◽  
Benjamin S. Hsiao ◽  
Benjamin Chu
Keyword(s):  
Graphene Oxide ◽  
High Flux ◽  
Ethanol Dehydration ◽  
Barrier Layers ◽  
Oxide Barrier ◽  
Nanofibrous Membranes
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