Characterization of Rapid Thermal and Micro-Wave Annealed Germanium Thin Films Grown by E-Beam Evaporation on Glass Substrates

2013 ◽  
Vol 663 ◽  
pp. 431-435
Author(s):  
Li Te Tsou ◽  
Sheng Hao Chen ◽  
Huai Yi Chen ◽  
Yao Jen Lee ◽  
Horng Show Koo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Film Thickness ◽  
Sheet Resistance ◽  
Cross Section ◽  
Rapid Thermal Annealing ◽  
Glass Substrates ◽  
Microwave Annealing

In this paper, we used the electron beam (e-beam) evaporation to deposit Ge thin film on glass, and used microwave annealing (MWA) system of 5.8 GHz frequency for thin film crystallization. Then, we compared the MWA experiment results of sample sheet resistance (Rs), crystallization strength and cross section with those using traditional rapid thermal annealing (RTA) equipment. We found that MWA can get poly-Ge thin film with (111), (220) and (311) crystallization directions and optimal Rs at a temperature of about 450 ° C without affecting the film thickness. By comparison, RTA equipment can only reduce the sample Rs at least temperature of 550oC.

scholarly journals Electrical characterization of aluminum (Al) thin films measured by using four- point probe method

2013 ◽  
Vol 8 (2) ◽  
pp. 31-36 ◽  
Author(s):  
GP Panta ◽  
DP Subedi
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Electrical Characterization ◽  
Probe Method ◽  
Glass Substrates ◽  
Engineering And Technology

This paper reports the results of electrical characterization of aluminum thin films. Uniform Al thin films were deposited by physical vapor deposition (PVD) technique on glass substrates. The electrical resistivity of the films as a function of film thickness was studied. These parameters have been measured by four-point probe method. The electrical resistivity was obtained by the measurement of current (in mA) and voltage in (mV) through the probe. The results showed that resistivity of the film decreases linearly with the film thickness in the range of the thickness studied in this work. Kathmandu University Journal of Science, Engineering and Technology Vol. 8, No. II, December, 2012, 31-36 DOI: http://dx.doi.org/10.3126/kuset.v8i2.7322

TiNi/GaAs Thin Film Structures for Gate Metallizations

2000 ◽  
Vol 648 ◽  
Author(s):  
Chichang Zhang ◽  
Aris Christou
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Sheet Resistance ◽  
Intermetallic Phase ◽  
Intermetallic Phases ◽  
Schottky Barriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Alloy Tini

AbstractShape memory alloy TiNi thin films on GaAs have been investigated. A series of TiNi compositions were electron beam deposited on GaAs initially as thin multilayers of Ti and Ni. The intermetallic phase of TiNi was formed by annealing and complete intermixing of the multilayers at 370oC. The intermetallic phases were investigated with X-ray diffraction techniques. The annealing kinetics and resistivity investigations were carried out in order to minimize the sheet resistance of the intermetallic phase. TiNi Schottky barriers on GaAs have been fabricated and their performance will be reported. Additional investigations on surface morphology using the energy dispersive spectroscopy as well as TEM investigations show the correlation between microstructure, intermetallic phase formation and sheet resistance.

Characterization of MnS Thin Films Deposited by Chemical Bath Deposition

2019 ◽  
Vol 969 ◽  
pp. 433-438 ◽  
Author(s):  
Dattatraya K. Sonavane ◽  
S.K. Jare ◽  
M.A. Shaikh ◽  
R.V. Kathare ◽  
R.N. Bulakhe
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Band Gap Energy ◽  
Sulfur Source ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Double Beam

Glass substrates are used to deposit thin films utilizing basic and value effective chemical bath deposition (CBD) technique. The films were prepared from the mixture as solutions of manganous acetate tetrahydrate [C4H6MnO44H2O] as a manganese source, thiourea [(H2 N) 2 CS] as a sulfur source and triethanolamine (TEA) [(HOC2H4)3N] as a complexing agent.In the present paper the deposition was successfully done at 60 °C temperature. The absorption properties and band gap energy were determined employing double beam spectrophotometer. The optical band gap value calculated from absorption spectra of MnS thin film is found to be about 3.1eV.The MnS thin film was structurally characterized by X-ray Diffraction (XRD). The MnS thin film was morphologically characterized by Scanning Electron Microscopy (SEM) and elemental analysis was performed using EDS to confirm the formation of MnS.

scholarly journals Characterization of Thermally Evaporated Ag-Ge-S Thin Films

2008 ◽  
Vol 1072 ◽  
Author(s):  
Fei Wang ◽  
William Porter Dunn ◽  
Mukul Jain ◽  
Carter De Leo ◽  
Nicholas Vicker ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Raman Spectroscopy ◽  
Film Thickness ◽  
Raman Line ◽  
Line Shapes ◽  
Thermal Evaporator ◽  
Bulk Glasses ◽  
Deposited Films

ABSTRACTThin films of ternary (GeS3)1−xAgx glasses (x=0.1 and 0.2) are studied in this work. Thin films are fabricated in a vacuum thermal evaporator at 3 different evaporation angles (0°, 30° and 45°). All thin film samples are examined in Raman spectroscopy. Raman results of both normally and obliquely deposited thin film samples reveal Ge-S CS modes (∼340cm−1) , Ge-S ES (∼360cm−1) modes, and thiogermanate modes Q1∼Q3 (390cm−1∼437cm−1). In addition, sharp peaks due to sulfur rings (S8) are observed at 218cm−1 and 470cm−1. Raman line-shapes of thin films are qualitatively consistent with their corresponding bulk glasses. However, the sharp peaks due to sulfur rings were not observed in bulk glasses. By comparing CS modes of thin films of three angles, we observe that normally deposited (0 degree) thin film shows a red-shift in center and a broadening in width. The film thickness of normally deposited films are significantly smaller comparing with that of corresponding obliquely deposited films.

scholarly journals TiNxThin-Film Resistors for Hybrid Integrated Circuits

1980 ◽  
Vol 6 (3-4) ◽  
pp. 231-233
Author(s):  
Z. Kempisty ◽  
L. Kròl-Stępniewska ◽  
W. Posadowski
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Integrated Circuits ◽  
Sheet Resistance ◽  
Nitrogen Atmosphere ◽  
Accelerated Ageing ◽  
Glass Substrates ◽  
Thin Film Resistors

TiNxthin-films have been evaluated for use as thin-film resistors. Thin-films were obtained by reactive triode sputtering of titanium in nitrogen atmosphere on crystallized glass substrates. In the resistiveTiNxlayers, the value ofxwas 0.96.2The value of the sheet resistance of the tested layers was 30 ohm/sq. Stability and TCR were measured during accelerated ageing.

Preparation and Characterization of BiFeO3 Film via Sol-Gel Spin-Coating Process

2011 ◽  
Vol 492 ◽  
pp. 202-205 ◽  
Author(s):  
Xi Wei Qi ◽  
Xiao Yan Zhang ◽  
Xuan Wang ◽  
Hai Bin Sun ◽  
Jian Quan Qi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Secondary Phases ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Ito Glass

BiFeO3 thin films were spin-coated on conductive indium tin oxide (ITO)/glass substrates by a simple sol-gel possess annealed at 470-590°C. The crystal structure of as-prepared BiFeO3 thin films annealed at different temperature was determined to be rhombohedral of R3m space and free of secondary phases was also confirmed. Cross section scanning electron microscope (SEM) pictures revealed that the thickness of BiFeO3 thin film was about 320 nm. The double remanent polarization 2Pr of BiFeO3 thin film annealed at 500°C is 2.5 μC/cm2 without applied field at room temperature. Image of atomic force microscopy indicated that the root-mean-square surface roughness value of BiFeO3 thin film was 6.13 nm.

A NOVEL METHOD FOR PRODUCING NANOSTRUCTURED CdSe THIN FILM

2019 ◽  
Vol 27 (07) ◽  
pp. 1950175 ◽  
Author(s):  
İSHAK AFŞIN KARİPER
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Film Thickness ◽  
Sem Analysis ◽  
Optical Bandgap ◽  
Cdse Thin Film ◽  
Glass Substrates ◽  
Commercial Glass ◽  
Ph Level

In this study, we produced Cadmium selenide (CdSe) crystalline thin film on commercial glass substrates via chemical bath deposition. Transmittance, absorbance, refractive index and optical bandgap of thin films were examined by UV/vis spectrum. XRD revealed a hexagonal form. The pH level of the baths in which CdSe thin films were deposited varied and optical and structural properties of the resulting thin films were analyzed. SEM analysis was used for surface analysis. Some features of the films were supposed to change with pH and these properties were investigated by testing different pH levels, which were 8, 9, 10 and 11. The variation of the optical bandgap changed between 1.60 and 1.75[Formula: see text]eV, according to the pH of deposition bath. Film thickness varied from 60[Formula: see text]nm to 93[Formula: see text]nm, with the variation of deposition bath’s pH. Moreover, it has been found that refractive index values were also changed with film thickness; these were calculated as 2.28, 2.19, 2.22 and 2.36 for 93.27, 60.97, 61.09 and 60.18[Formula: see text]nm, respectively. Dielectric constant also varied with refractive index, taking values 0.85, 0.75, 0.78, 0.93 for refractive indexes 2.28, 2.19, 2.22 and 2.36, respectively.

Deposition of ZnS thin films by electron beam evaporation technique, effect of thickness on the crystallographic and optical properties

2019 ◽  
Vol 33 (04) ◽  
pp. 1950034 ◽  
Author(s):  
Bassam Abdallah ◽  
Koutayba Alnama ◽  
Fareza Nasrallah
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electron Beam ◽  
Film Thickness ◽  
Optical Transmittance ◽  
Electron Beam Evaporation ◽  
Film Structure ◽  
Dielectric Constants ◽  
Glass Substrates ◽  
Xrd Patterns

Deposition of Zinc sulfide (ZnS) thin films on Si (100) and glass substrates has been performed using electron beam evaporation (EBE) method without annealing. Film structure has been analyzed by XRD, while SEM and AFM have been used to explore the films morphology. Raman spectroscopy has been used to confirm film composition. The stoichiometry has been verified by EDX and XPS techniques. XRD patterns indicated that the films possess a polycrystalline cubic structure with orientations along (111) and (220) planes. The crystallinity has been better with film thickness in the 350–1700 nm range while the RMS roughness increases. Optical properties of the grown films were characterized by optical transmittance measurements (UV–Vis). The deduced energy band gap of the films shows a clear reduction from 3.45 eV to 3.36 eV with increasing film thickness. The evolution of refractive index, extinction coefficient, and dielectric constants with thickness has been investigated from transmittance spectra in the 500–1000 nm wavelength range.

Structural, Optical and Electrical Properties of Multiple Layers Nano-Structured Zinc Oxide Thin Film

2015 ◽  
Vol 1109 ◽  
pp. 401-404
Author(s):  
I. Saurdi ◽  
Mohamad Hafiz Mamat ◽  
M.F. Malik ◽  
A. Ishak ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Visible Region ◽  
Oxide Thin Film ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Thin Film Thickness ◽  
Glass Substrates ◽  
Average Transmittance

The nanoStructured ZnO thin films were prepared by Spin coating technique on glass substrates at various layers. The structural and optical properties were characterized by field emission scanning electron microscopy (FESEM) and UV-Vis-NIR respectively. The surface morphology reveals that the nanostructured ZnO thin films become densely packed as the thickness increased. The average particles size of ZnO thin film estimated from FESEM images at different layers of 1, 3, 5, 7, 9 were 20nm, 28nm, 36nm, 39nm and 56nm, respectively. The surface roughness of thin films was increase as the thin film thickness increases. The results show all films are transparent in the visible region (400-800 nm) with average transmittance above 85 %. Meanwhile, the optical band gap was decrease as the film thickness increases. The conductivity of ZnO thin film slightly improved as the thickness increased as measured through two probes 1-V measurement system.

scholarly journals Further Increasing the Accuracy of Characterization of a Thin Dielectric or Semiconductor Film on a Substrate from Its Interference Transmittance Spectrum

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4681
Author(s):  
Dorian Minkov ◽  
Emilio Marquez ◽  
George Angelov ◽  
Gavril Gavrilov ◽  
Susana Ruano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Film Thickness ◽  
High Accuracy ◽  
Transmittance Spectrum ◽  
Semiconductor Film ◽  
Envelope Method ◽  
Average Film Thickness

Three means are investigated for further increasing the accuracy of the characterization of a thin film on a substrate, from the transmittance spectrum T(λ) of the specimen, based on the envelope method. Firstly, it is demonstrated that the accuracy of characterization, of the average film thickness d¯ and the thickness non-uniformity ∆d over the illuminated area, increases, employing a simple dual transformation utilizing the product T(λ)xs(λ), where Tsm(λ) is the smoothed spectrum of T(λ) and xs(λ) is the substrate absorbance. Secondly, an approach is proposed for selecting an interval of wavelengths, so that using envelope points only from this interval provides the most accurate characterization of d¯ and ∆d, as this approach is applicable no matter whether the substrate is transparent or non-transparent. Thirdly, the refractive index n(λ) and the extinction coefficient k(λ) are computed, employing curve fitting by polynomials of the optimized degree of 1/λ, instead of by previously used either polynomial of the optimized degree of λ or a two-term exponential of λ. An algorithm is developed, applying these three means, and implemented, to characterize a-Si and As98Te2 thin films. Record high accuracy within 0.1% is achieved in the computation of d¯ and n(λ) of these films.

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