Focused Ion Beam Induced Deposition

1989 ◽  
Vol 147 ◽  
Author(s):  
John Melngailis ◽  
Patricia G. Blauner
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Diameter ◽  
X Ray ◽  
Metal Organic ◽  
Side Walls ◽  
Gas Molecules ◽  
Ion Species ◽  
Prototype Phase

AbstractFocused ion beam induced deposition is already in use commercially for the repair of clear defects in photomasks, where missing absorber is added. Research is being carried out to extend this technique to the repair of x-ray lithography masks and to the restructuring and repair of integrated circuits, particularly in the prototype phase. In this technique a local gas ambient is created, for example, by aiming a small nozzle at the surface. The gas molecules are thought to adsorb on the surface and to be broken up by the scanned focused ion beam. A deposit is formed with linewidth equal to the beam diameter which can be below 0.1 Ό m. At small beam diameters and low currents (50–100 pA) the time to deposit 1Όm3 is in the vicinity of 10–20 sec. If the gas is a hydrocarbon, the deposit is largely carbon, which is useful for photomask repair. On the other hand, if the gas is a metal halide or a metal organic, the deposit is metallic. The deposits have substantial concentrations of impurities due to the atoms in the organometallic, to the ion species used, or to the ambient in the vacuum chamber. Thus the resistivities of the "metal" films deposited typically range from 150 to 1000 ΌΏcm which is usable for some repairs. (Pure metals have resistivities in the range 2.5 to 12 pQcm.) We have deposited gold from dimethyl gold hexafluoro acetylacetonate and have achieved linewidths down to 0.1 Όm, patches of 1 Όm thickness with steep side walls and in some cases, resistivities approaching the bulk value. Other workers have reported deposits of Al, W, Ta, and Cr. We will review previous work in the field and present some of our own current results.

A Transmission X-ray Microscope (TXM) for Non-destructive 3D Imaging of ICs at Sub-100 nm Resolution

2002 ◽  
Author(s):  
Steve Wang ◽  
Frederick Duewer ◽  
Shashidar Kamath ◽  
Christopher Kelly ◽  
Alan Lyon ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Process Development ◽  
Imaging System ◽  
Ion Beam ◽  
Layer By Layer ◽  
X Ray ◽  
Submicron Structures

Abstract Xradia has developed a laboratory table-top transmission x-ray microscope, TXM 54-80, that uses 5.4 keV x-ray radiation to nondestructively image buried submicron structures in integrated circuits with at better than 80 nm 2D resolution. With an integrated tomographic imaging system, a series of x-ray projections through a full IC stack, which may include tens of micrometers of silicon substrate and several layers of Cu interconnects, can be collected and reconstructed to produce a 3D image of the IC structure at 100 nm resolution, thereby allowing the user to detect, localize, and characterize buried defects without having to conduct layer by layer deprocessing and inspection that are typical of conventional destructive failure analysis. In addition to being a powerful tool for both failure analysis and IC process development, the TXM may also facilitate or supplant investigations using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and focused ion beam (FIB) tools, which generally require destructive sample preparation and a vacuum environment.

Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

2004 ◽  
Author(s):  
Valery Ray
Keyword(s):  
Side Effects ◽  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Enabling Technology ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

3D Observation of Elemental Distribution of Si-Device using a Dedicated FIB/STEM System

2005 ◽  
Author(s):  
T. Yaguchi ◽  
M. Konno ◽  
T. Kamino ◽  
M. Ogasawara ◽  
K. Kaji ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Elemental Distribution ◽  
Multivariate Statistical ◽  
X Ray ◽  
Sample Rotation ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Elemental Maps

Abstract A technique for preparation of a pillar shaped sample and its multi-directional observation of the sample using a focused ion beam (FIB) / scanning transmission electron microscopy (STEM) system has been developed. The system employs an FIB/STEM compatible sample rotation holder with a specially designed rotation mechanism, which allows the sample to be rotated 360 degrees [1-3]. This technique was used for the three dimensional (3D) elemental mapping of a contact plug of a Si device in 90 nm technology. A specimen containing a contact plug was shaped to a pillar sample with a cross section of 200 nm x 200 nm and a 5 um length. Elemental analysis was performed with a 200 kV HD-2300 STEM equipped with the EDAX genesis Energy dispersive X-ray spectroscopy (EDX) system. Spectrum imaging combined with multivariate statistical analysis (MSA) [4, 5] was used to enhance the weak X-ray signals of the doped area, which contain a low concentration of As-K. The distributions of elements, especially the dopant As, were successfully enhanced by MSA. The elemental maps were .. reconstructed from the maps.

Optimizing Gas-Assisted Processes for Ga and Xe FIB Circuit Edit Application

2016 ◽  
Author(s):  
Valery Ray ◽  
Josef V. Oboňa ◽  
Sharang Sharang ◽  
Lolita Rotkina ◽  
Eddie Chang ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Width ◽  
Ion Source ◽  
Reconstruction Technique ◽  
Beam Diameter ◽  
Current Profile ◽  
Single Beam

Abstract Despite commercial availability of a number of gas-enhanced chemical etches for faster removal of the material, there is still lack of understanding about how to take into account ion implantation and the structural damage by the primary ion beam during focused ion beam gas-assisted etching (FIB GAE). This paper describes the attempt to apply simplified beam reconstruction technique to characterize FIB GAE within single beam width and to evaluate the parameters critical for editing features with the dimensions close to the effective ion beam diameter. The approach is based on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB potentially suitable platform for selective removal of materials in circuit edit application.

Oxidation of Alloy-X in Subcritical, Transition, and Supercritical Water

CORROSION ◽  
10.5006/3881 ◽  
2021 ◽  
Author(s):  
Zachary Karmiol ◽  
Dev Chidambaram
Keyword(s):  
Supercritical Water ◽  
Photoelectron Spectroscopy ◽  
Focused Ion Beam ◽  
Elevated Temperatures ◽  
Subcritical Water ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nickel Based Superalloy ◽  
Before And After

This work investigates the oxidation of a nickel based superalloy, namely Alloy X, in water at elevated temperatures: subcritical water at 261°C and 27 MPa, the transition between subcritical and supercritical water at 374°C and 27 MPa, and supercritical water at 380°C and 27 MPa for 100 hours. The morphology of the sample surfaces were studied using scanning electron microscopy coupled with focused ion beam milling, and the surface chemistry was investigated using X-ray diffraction, Raman spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy before and after exposure studies. Surfaces of all samples were identified to comprise of a ferrite spinel containing aluminum.

High Conductivity FIB Deposited Metal

1995 ◽  
Vol 396 ◽  
Author(s):  
P.G. Blauner ◽  
A. Wagner
Keyword(s):  
Focused Ion Beam ◽  
High Efficiency ◽  
Ion Beam ◽  
Deposition Process ◽  
Gold Deposition ◽  
X Ray ◽  
Annealing Step ◽  
Deposited Metal ◽  
Major Application ◽  
Deposition Processes

AbstractThe ion beam induced metal deposition processes now employed by commercial focused ion beam (FIB) tools all demonstrate less than optimal characteristics for use in circuit repair, a major application of these tools. In particular, the processes have low efficiencies, the metals produced have poor conductivity, and some form of clean up is generally required to remove excess material surrounding the repair site. The gold deposition process developed for x-ray mask repair, in contrast, exhibits efficiencies 10-50 times higher with significantly less material deposited in unwanted areas. Unfortunately, the conductivity of the gold is even poorer than that of materials now used for FIB circuit repair.In this paper, an annealing step which improves the conductivity of FIB deposited Au is described. Results are presented demonstrating resistivities of 5-15 μΩ-cm while maintaining the high efficiency of the gold deposition process. The suitability of the process for use in FIB circuit repair is discussed.

Imaging of retina cellular and subcellular structures using ptychographic hard X-ray tomography

2021 ◽  
Vol 134 (19) ◽  
Author(s):  
Valerie Panneels ◽  
Ana Diaz ◽  
Cornelia Imsand ◽  
Manuel Guizar-Sicairos ◽  
Elisabeth Müller ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Plexiform Layer ◽  
Wild Type Mouse ◽  
Small Region ◽  
Mouse Retina ◽  
Imaging Method ◽  
Scanning Method ◽  
X Ray ◽  
Correlative Imaging

ABSTRACT Ptychographic hard X-ray computed tomography (PXCT) is a recent method allowing imaging with quantitative electron-density contrast. Here, we imaged, at cryogenic temperature and without sectioning, cellular and subcellular structures of a chemically fixed and stained wild-type mouse retina, including axons and synapses, with complete isotropic 3D information over tens of microns. Comparison with tomograms of degenerative retina from a mouse model of retinitis pigmentosa illustrates the potential of this method for analyzing disease processes like neurodegeneration at sub-200 nm resolution. As a non-destructive imaging method, PXCT is very suitable for correlative imaging. Within the outer plexiform layer containing the photoreceptor synapses, we identified somatic synapses. We used a small region inside the X-ray-imaged sample for further high-resolution focused ion beam/scanning electron microscope tomography. The subcellular structures of synapses obtained with the X-ray technique matched the electron microscopy data, demonstrating that PXCT is a powerful scanning method for tissue volumes of more than 60 cells and sensitive enough for identification of regions as small as 200 nm, which remain available for further structural and biochemical investigations.

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